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164 条记录 (耗时 0.047 秒)

    Magnetoresistive element and method of manufacturing the same
    62.
    发明授权
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US08716818B2

    公开(公告)日：2014-05-06

    申请号：US13428465

    申请日：2012-03-23

    申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    63.
    发明申请
    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    磁性元件及其制造方法

    公开(公告)号：US20130001652A1

    公开(公告)日：2013-01-03

    申请号：US13428465

    申请日：2012-03-23

    申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

    Magnetoresistance effect element and magnetic random access memory
    64.
    发明授权
    Magnetoresistance effect element and magnetic random access memory 有权
    磁阻效应元件和磁性随机存取存储器

    公开(公告)号：US08279663B2

    公开(公告)日：2012-10-02

    申请号：US13184976

    申请日：2011-07-18

    申请人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    发明人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226

    摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

    摘要翻译： 磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。 通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动 并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

    Magnetoresistive effect device and magnetic memory
    65.
    发明授权
    Magnetoresistive effect device and magnetic memory 有权
    磁阻效应器和磁记忆体

    公开(公告)号：US08223533B2

    公开(公告)日：2012-07-17

    申请号：US12556883

    申请日：2009-09-10

    申请人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    发明人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    IPC分类号： G11C11/00

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

    摘要翻译： 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

    MAGNETORESISTIVE ELEMENT
    67.
    发明申请
    MAGNETORESISTIVE ELEMENT 有权
    磁电元件

    公开(公告)号：US20120008381A1

    公开(公告)日：2012-01-12

    申请号：US13233906

    申请日：2011-09-15

    申请人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/15 ,  G06K19/077 ,  H01L29/82

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

    摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

    摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。