SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240355757A1

    公开(公告)日:2024-10-24

    申请号:US18408215

    申请日:2024-01-09

    IPC分类号: H01L23/544

    CPC分类号: H01L23/544 H01L2223/54426

    摘要: The present disclosure relates to semiconductor devices and their fabrication methods. An example semiconductor device comprises a substrate including a logic cell region and a key region, a dummy active pattern on the key region, and a key pattern in the dummy active pattern. The key pattern includes a key cell that is recessed at an upper portion of the substrate. The key cell includes a bottom surface lower than a top surface of the dummy active pattern, and a plurality of inner lateral surfaces that surround the bottom surface. The inner lateral surfaces include a first inner lateral surface and a second inner lateral surface opposite to the first inner lateral surface. A ratio of a silicon atom surface density of the second inner lateral surface to a silicon atom surface density of the first inner lateral surface is in a range of about 0.9 to about 1.1.

    STORAGE SYSTEM WITH BAD BLOCKS, AND OPERATING METHOD THEREOF

    公开(公告)号:US20240354018A1

    公开(公告)日:2024-10-24

    申请号:US18378452

    申请日:2023-10-10

    IPC分类号: G06F3/06

    摘要: The present disclosure provides methods and apparatuses for a storage system. In some embodiments, a storage system includes a plurality of storage devices and a host device. Each storage device of the plurality of storage devices includes a plurality of blocks classified into first type blocks, second type blocks, and third type blocks, and is configured to generate internal state information items indicating information on a first number of first type blocks, a second number of second type blocks, and a third number of third type blocks. The host device is configured to receive, from the plurality of storage devices, the internal state information items, generate target state information such that the plurality of storage devices include a same number or substantially same number of first type blocks, based on the internal state information items, and transmit, to the plurality of storage devices, the target state information.