PLASMA PROCESSING APPARATUS AND METHOD
    64.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD 有权
    等离子体加工设备和方法

    公开(公告)号:US20130162142A1

    公开(公告)日:2013-06-27

    申请号:US13705712

    申请日:2012-12-05

    CPC classification number: H05H1/46 H01J37/32477 H01J37/32495

    Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

    Abstract translation: 等离子体处理装置包括处理室; 用作安装台的下电极,用于安装目标物体; 以及设置成与下电极相对的上电极或天线电极。 该装置还包括用于将包含含卤素气体和氧气的气体引入处理室的气体供给源和用于将高频电力施加到上部电极中的至少一个的高频电源, 天线电极或下电极。 在暴露于等离子体的处理室的内表面中,目标物体的安装位置与上部电极或天线电极之间的至少一部分或全部表面; 或上部电极或天线电极的至少一部分或全部表面涂覆有氟化合物。

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