Method of Cladding Diamond Seeds
    61.
    发明申请
    Method of Cladding Diamond Seeds 有权
    包层钻石种子的方法

    公开(公告)号:US20080219914A1

    公开(公告)日:2008-09-11

    申请号:US11916148

    申请日:2006-05-26

    Abstract: The invention relates to a method for manufacture of diamond, the method including the steps of providing a first coating of solvent metal or solvent metal alloy on a diamond seed to create a coated diamond seed, situating the coated diamond seed adjacent a catalyst system comprising a solvent metal and/or a source of carbon, and subjecting the coated diamond seed and catalyst system to increased temperature wherein the melting point of the first coating is at least 20 deg C. below that of the catalyst system. The invention further relates to a compact comprising a plurality of diamond seeds wherein at least one seed includes a first coating comprising a solvent metal and/or solvent metal based alloy, the compact further comprising a catalyst system comprising a solvent metal and/or a source of carbon wherein the melting point of the first coating is at least 20 deg C. below that of the catalyst system.

    Abstract translation: 本发明涉及一种用于制造金刚石的方法,该方法包括以下步骤:在金刚石种子上提供溶剂金属或溶剂金属合金的第一涂层以产生涂覆的金刚石晶种,将涂覆的金刚石晶粒定位在催化剂体系附近,该催化剂体系包含 溶剂金属和/或碳源,并且使经涂覆的金刚石晶种和催化剂体系升温,其中第一涂层的熔点低于催化剂体系的熔点至少20℃。 本发明还涉及包含多个金刚石种子的压块,其中至少一种种子包括包含溶剂金属和/或溶剂金属基合金的第一涂层,该压块还包括包含溶剂金属和/或源的催化剂体系 的碳,其中第一涂层的熔点低于催化剂体系的熔点至少20℃。

    Superabrasive particle synthesis with controlled placement of crystalline seeds
    64.
    发明申请
    Superabrasive particle synthesis with controlled placement of crystalline seeds 失效
    超级磨料颗粒合成,控制放置晶种

    公开(公告)号:US20060016127A1

    公开(公告)日:2006-01-26

    申请号:US11175017

    申请日:2005-07-05

    Applicant: Chien-Min Sung

    Inventor: Chien-Min Sung

    Abstract: An improved method for synthesizing superabrasive particles provides high quality industrial superabrasive particles with high yield and a narrow size distribution. The synthesis method can include forming a growth precursor of a substantially homogeneous mixture of raw material and catalyst material or layers of raw material and metal catalyst. The growth precursor can have a layer of adhesive over at least a portion thereof. A plurality of crystalline seeds can be placed in a predetermined pattern on the layer of adhesive. The growth precursor can be maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. Advantageously, the patterned placement of crystalline seeds and disclosed processes allow for production of various morphologies of synthetic diamonds, including octahedral and cubic diamonds, and improved growth conditions generally. As a result, the grown superabrasive particles typically have a high yield of high quality particles and a narrow distribution of particle sizes.

    Abstract translation: 合成超级磨料颗粒的改进方法提供高产率和窄尺寸分布的高质量工业超研磨颗粒。 合成方法可以包括形成原料和催化剂材料或原料和金属催化剂层的基本上均匀的混合物的生长前体。 生长前体可在其至少一部分上具有一层粘合剂。 多个结晶种子可以以预定图案放置在粘合剂层上。 生长前体可以保持在超磨料晶体在热力学稳定的温度和压力下达足以达到所需生长程度的时间。 有利地,结晶晶种的图案化布置和所公开的方法允许生产合成金刚石的各种形态,包括八面体和立方晶体,以及通常改善的生长条件。 结果,生长的超级磨料颗粒通常具有高产率的高质量颗粒和窄的粒度分布。

    Single crystal of nitride containing metal element of group III or IV and method for preparing the same
    65.
    发明申请
    Single crystal of nitride containing metal element of group III or IV and method for preparing the same 失效
    含有III或IV族金属元素的氮化物单晶及其制备方法

    公开(公告)号:US20040040490A1

    公开(公告)日:2004-03-04

    申请号:US10398219

    申请日:2003-04-09

    CPC classification number: B01J3/062 B01J2203/0675 B01J2203/068

    Abstract: null-ZrNCl polycrystalline powder prepared by chemical transport method and NH4Cl are mixed in a molar ratio of 1:2. The mixture is encapsulated in a Au capsule (6 mm in inner diameter and 6 mm in depth) of a reaction vessel 2, which is then enclosed in a highly heat-conductivitive sodium chloride block as an electrically insulating pressure medium 6. The mixture held in the sodium chloride block is placed in a carbon tube 8 for serving as a heater. In a cubic-pressing apparatus using a pyrophyllite 12 as a pressure-transmitting medium, the mixture is heated at 900null C. for 2 hours under an applied pressure of 3 GPa. After the mixture is allowed to stand until it is cooled down to room temperature, the Au capsule is taken out and light green null-ZrNCl single crystals are obtained. A large single crystal among them had a hexagonal plate-like habit and is transparent with dimensions about 2 mm in diameter, and 0.3 mm in thickness.

    Abstract translation: 通过化学转移法和NH4Cl制备的β-ZrNCl多晶粉末以1:2的摩尔比混合。 将混合物包封在反应容器2的Au胶囊(内径6mm,深度为6mm)中,然后将其封入作为电绝缘压力介质6的高导热性氯化钠块中。混合物保持 在氯化钠块中放置在用作加热器的碳管8中。 在使用叶腊石12作为压力传递介质的立方压制装置中,将混合物在3GPa的施加压力下在900℃下加热2小时。 使混合物静置直至冷却至室温后,取出Au胶囊,得到浅绿色的β-ZrNCl单晶。 它们中的大单晶具有六角形板状习惯,并且是透明的,其直径大约为2mm,厚度为0.3mm。

    Self-grown monopoly compact grit
    67.
    发明授权
    Self-grown monopoly compact grit 失效
    自制垄断紧凑砂砾

    公开(公告)号:US06616725B2

    公开(公告)日:2003-09-09

    申请号:US09934459

    申请日:2001-08-21

    Abstract: A self-grown monopoly compact grit and high pressure, high temperature process for preparing the same. The high pressure, high temperature sintered/synthesized monopoly compact grit is used in various industrial tools such as saw blades, grinding wheels, cutting tools and drill bits. Further, the monopoly compact grit of the present invention is produced from a seed of a mono-crystal of diamond or cubic boron nitride surrounded by either a self-grown crystal layer or an integrally bonded poly-crystalline sintered compact layer. The self-grown crystal layer is a new grown crystal structure where the seed crystal grows into a new phase through a normal diamond or cubic boron nitride synthesis process in the presence of a catalyst metal solvent. The compact layer is composed of about 50 to about 90 volume percent of diamond or cubic boron nitride, a typical binder material, which is a catalyst for crystal-to-crystal bonding, and a cementing agent which is a binding agent capable of forming stable carbide and nitride bonds.

    Abstract translation: 自生成垄断的紧凑砂砾和高压,高温工艺制备相同。 高压,高温烧结/合成的垄断压实砂砾用于各种工业工具,如锯片,砂轮,切削工具和钻头。 此外,本发明的垄断压块砂砾由金刚石或立方氮化硼的单晶种子生产,其由自生长晶体层或整体结合的多晶烧结致密层包围。 自生晶体层是新生长的晶体结构,其中晶种在催化剂金属溶剂存在下通过正常的金刚石或立方氮化硼合成工艺生长成新相。 致密层由约50至约90体积%的金刚石或立方氮化硼组成,典型的粘合剂材料是用于晶体 - 晶体结合的催化剂,和作为能够形成稳定的粘合剂的粘合剂 碳化物和氮化物键。

    Crystalline gallium nitride and method for forming crystalline gallium nitride
    68.
    发明授权
    Crystalline gallium nitride and method for forming crystalline gallium nitride 有权
    结晶氮化镓和形成结晶氮化镓的方法

    公开(公告)号:US06398867B1

    公开(公告)日:2002-06-04

    申请号:US09413446

    申请日:1999-10-06

    CPC classification number: B01J3/062 B01J2203/0665 B01J2203/068

    Abstract: A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride; providing mineralizer; providing solvent; providing a capsule; disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell; and subjecting the pressure cell to high pressure and high temperature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.

    Abstract translation: 氮化镓生长工艺形成结晶氮化镓。 该方法包括以下步骤:提供源氮化镓; 提供矿化剂; 提供溶剂; 提供胶囊; 将源氮化镓,矿化剂和溶剂置于胶囊中; 密封胶囊; 将胶囊置于压力池中; 以及使压力单元经受高压和高温(HPHT)条件一段足以溶解氮化镓源的时间并将源氮化镓沉淀到至少一个氮化镓晶体中。 本发明还提供了通过本发明的方法形成的氮化镓晶体。

    Surface impurity-enriched diamond and method of making
    69.
    发明申请
    Surface impurity-enriched diamond and method of making 失效
    富含表面杂质的金刚石及其制造方法

    公开(公告)号:US20010043903A1

    公开(公告)日:2001-11-22

    申请号:US09783441

    申请日:2001-02-14

    Abstract: An element-doped diamond crystal is disclosed herein. The crystal includes at least one dopant element which has a greater concentration toward or near an outermost surface of the crystal than in the center of the crystal. The concentration of the dopant element is at a local minimum at least about 5 micrometers below the surface. The concentration-profile of the dopant element for these diamond crystals causes an expansion of the diamond lattice, thereby generating tangential compressive stresses at the surface of the diamond crystal. These stresses beneficially increase the compressive fracture strength of the diamond.

    Abstract translation: 本文公开了元素掺杂金刚石晶体。 所述晶体包括至少一种掺杂元素,所述至少一种掺杂元素朝向或接近晶体的最外表面具有比在晶体中心更大的浓度。 掺杂剂元素的浓度在表面下方至少约5微米的局部最小值。 用于这些金刚石晶体的掺杂剂元素的浓度分布导致金刚石晶格的膨胀,从而在金刚石晶体的表面产生切向压应力。 这些应力有利地增加了金刚石的压缩断裂强度。

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