公开(公告)号：US5328786A

公开(公告)日：1994-07-12

申请号：US760383

申请日：1991-09-16

申请人： Junji Miyazaki ,  Hitoshi Nagata

发明人： Junji Miyazaki ,  Hitoshi Nagata

IPC分类号： G03F1/28 ,  G03F1/34 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/34 ,  G03F1/28 ,  G03F1/30

摘要： The relations in phase between first and second phase regions which are disposed on both sides of light-blocking regions interposing between them are arranged that there is a phase difference between the lights transmitted by the first and second phase regions enough to cancel with each other because of the interference, while the relations in phase between the first and second phase regions and third phase region disposed adjacent to them are arranged that between the lights transmitted by them there is a phase difference about a half of the phase difference between the lights transmitted by the first and second phase regions. Thus, the lights transmitted by the first and second phase regions and prevailing in the back sides of the light-blocking regions cancel with each other because of the interference to enchance the accuracy of the transfer at the edge portions of the light-blocking regions. Moreover, the cancellation of the lights caused by the interference at the boundaries separating the third phase region from the first and second phase regions is weakened to an extent that it exerts no effect on the transference of the pattern. As a result, the mask pattern can be transferred with high resolution without any effect of the configurations of the light-blocking regions.

摘要翻译： 布置在插入它们之间的阻光区域的两侧上的第一和第二相位区域之间的相位关系被布置成由第一和第二相位区域传输的光之间存在足够相互抵消的相位差，因为它们彼此抵消，因为 当相邻的第一和第二相位区域与第三相位区域之间的相位关系被布置成在它们所传输的光线之间存在大约相差的一半的相位差 第一和第二相区域。 因此，由于对阻挡区域的边缘部分处的转印精度的干扰，由遮光区域的背面中的第一相位区域和第二相位区域传播的光线彼此抵消。 此外，由于在将第三相位区域与第一和第二相位区域分开的边界处的干涉引起的光的消除被削弱到对图案的转移没有影响的程度。 结果，可以以高分辨率转印掩模图案，而不会影响遮光区域的配置。

公开(公告)号：US5208125A

公开(公告)日：1993-05-04

申请号：US738063

申请日：1991-07-30

申请人： Tyler A. Lowrey ,  Randal W. Chance

发明人： Tyler A. Lowrey ,  Randal W. Chance

IPC分类号： G03F1/28 ,  G03F1/30

CPC分类号： G03F1/28 ,  G03F1/30

摘要： A method of fabricating a phase shifting reticle that can be used as a mask in photolithographic processes such as semiconductor wafer patterning. A transparent quartz substrate is subjected to high voltage ion bombardment to produce patterns of ion implant areas on the substrate. By carefully selecting the dopants for ion implantation and closely controlling the implantation process, areas on the substrate are produced having an absorption property for forming an opaque light blocking area or indexes of refraction different than the quartz substrate and selected to achieve a 0.degree. to 180.degree. phase shift area. This produces a repetitive pattern of alternating light transmission openings and phase shifters having opaque light blockers on either side. Additionally, tapered phase shifters may be implanted into the substrate to extend from a 180.degree. phase shift area into a light transmission opening at a 0.degree. phase shift.

摘要翻译： 一种制造可用作诸如半导体晶片图案化的光刻工艺中的掩模的相移掩模版的方法。 对透明石英衬底进行高压离子轰击，以在衬底上产生离子注入区域的图案。 通过仔细选择用于离子注入的掺杂剂并且密切地控制注入工艺，产生具有用于形成不同于石英衬底的不透明遮光面积或折射率的吸收性能的衬底上的区域，并选择实现0°至180° DEG相移区域。 这产生交替的光传输开口的重复图案和在任一侧上具有不透明光阻挡器的移相器。 此外，锥形移相器可以注入到基板中，从180度相移区域延伸到0°相移的透光开口。

公开(公告)号：US20160291454A1

公开(公告)日：2016-10-06

申请号：US15078114

申请日：2016-03-23

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Takuro KOSAKA ,  Yukio INAZUKI

IPC分类号： G03F1/32

CPC分类号： G03F1/32 ,  G03F1/28 ,  G03F1/68

摘要： A halftone phase shift film containing Si and N and/or O is deposited on a transparent substrate by reactive sputtering of a Si-containing target with a reactive gas containing N and/or O. One layer is sputter deposited while the reactive gas flow rate is set equal to or lower than the lower limit of the reactive gas flow rate in the hysteresis region, and another layer is sputter deposited while the reactive gas flow rate is set inside the lower and upper limits of the reactive gas flow rate in the hysteresis region. The phase shift film exhibits satisfactory in-plane uniformity of optical properties.

摘要翻译： 含有Si和N和/或O的半色调相移膜通过含有含Si靶的反应气体含有N和/或O的反应溅射沉积在透明基板上。一层溅射沉积，反应气体流速 设定为滞后区域的反应气体流量的下限以下，另一层溅射沉积，而反应气体流量设定在迟滞中的反应气体流量的下限和上限内 地区。 相移膜表现出令人满意的光学特性的面内均匀性。

公开(公告)号：US09268900B1

公开(公告)日：2016-02-23

申请号：US14257865

申请日：2014-04-21

申请人： D2S, Inc.

发明人： P. Jeffrey Ungar

IPC分类号： G06F17/50 ,  G21K5/00 ,  G03F1/00 ,  G06F17/14 ,  G06F1/00

CPC分类号： G03F1/00 ,  G03F1/28 ,  G03F1/50 ,  G03F1/70 ,  G06F17/14 ,  G06F17/50 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  G06F2217/16 ,  G21K5/00

摘要： In an electronic design automation technique for optical proximity correction, a mask is represented by a function with an exact analytical form over a mask region. Using the physics of optical projection, a solution based on a spatial frequency analysis is determined. Spatial frequencies above a cutoff are determined by the optical system do not contribute to the projected image. Spatial frequencies below this cutoff affect the print (and the mask), while those above the cutoff only affect the mask. Frequency components in the function below this cutoff frequency may be removed, which will help to reduce computational complexity.

摘要翻译： 在用于光学邻近校正的电子设计自动化技术中，掩模由掩模区域上具有精确分析形式的函数表示。 使用光学投影的物理学，确定基于空间频率分析的解决方案。 通过光学系统确定高于截止点的空间频率对投影图像无贡献。 低于此截止位置的空间频率会影响打印（和面罩），而截止值以上的空间频率仅影响面罩。 低于该截止频率的功能中的频率分量可能被去除，这将有助于降低计算复杂度。

公开(公告)号：US20160018727A1

公开(公告)日：2016-01-21

申请号：US14642660

申请日：2015-03-09

申请人： Samsung Electronics Co., Ltd.

发明人： Jong-Doo KIM ,  Se-Jin PARK ,  Suk-Joo LEE

IPC分类号： G03F1/26 ,  H01L21/308

CPC分类号： G03F1/26 ,  G03F1/28 ,  G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  H01L21/3086

摘要： A mask for photolithography and methods of manufacturing a mask and a semiconductor device are provided. The method of manufacturing a mask may comprise providing a substrate, forming a phase shift material layer on the substrate, forming a light blocking layer on the phase shift material layer, and forming a main pattern and a sub pattern on the substrate by patterning the phase shift material layer and the light blocking layer. The light blocking layer may be removed on the main pattern left on the light blocking layer remaining on the sub pattern. A semiconductor device may be manufactured using the mask to form a photoresist pattern on a semiconductor wafer. The pattern of the photoresist may be used to etch an object layer of the semiconductor wafer.

摘要翻译： 提供了用于光刻的掩模和制造掩模和半导体器件的方法。 制造掩模的方法可以包括提供衬底，在衬底上形成相移材料层，在相移材料层上形成光阻挡层，以及通过对相位进行图案化来在衬底上形成主图案和子图案 移位材料层和遮光层。 可以在保留在子图案上的遮光层上留下的主图案上去除遮光层。 可以使用掩模制造半导体器件，以在半导体晶片上形成光致抗蚀剂图案。 光致抗蚀剂的图案可以用于蚀刻半导体晶片的物体层。

公开(公告)号：US08974987B2

公开(公告)日：2015-03-10

申请号：US13147634

申请日：2010-02-04

申请人： Takaharu Nagai ,  Hideyoshi Takamizawa ,  Hiroshi Mohri ,  Yasutaka Morikawa ,  Katsuya Hayano

发明人： Takaharu Nagai ,  Hideyoshi Takamizawa ,  Hiroshi Mohri ,  Yasutaka Morikawa ,  Katsuya Hayano

IPC分类号： G03F1/32 ,  G03F1/00 ,  G03F1/36 ,  G03F1/72

CPC分类号： G03F1/72 ,  G03F1/0076 ,  G03F1/0092 ,  G03F1/144 ,  G03F1/28 ,  G03F1/30 ,  G03F1/32 ,  G03F1/36 ,  G03F1/38 ,  G03F1/44 ,  G03F1/80

摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.

摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。

公开(公告)号：US20140370447A1

公开(公告)日：2014-12-18

申请号：US14475967

申请日：2014-09-03

申请人： GLOBALFOUNDRIES, INC.

发明人： Guoxiang NING ,  Chunyu WONG ,  Paul ACKMANN ,  Sarasvathi THANGARAJU

IPC分类号： G03F1/26 ,  G03F7/20

CPC分类号： G03F7/20 ,  G03F1/28 ,  G03F1/42 ,  G03F1/50

摘要： A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.

摘要翻译： 公开了一种掩模，其包括设置在掩模的第一侧上的多个第一相移区域和设置在掩模的第二侧上的多个第二相移区域。 第一相移区域和第二相移区域可以是交变相移区域，其中第一相移区域的相移与第二相移区域的相移相异，例如180度。 还公开了一种形成掩模的方法和使用该掩模的半导体器件制造方法。

公开(公告)号：US20140302679A1

公开(公告)日：2014-10-09

申请号：US14350314

申请日：2012-09-13

申请人： Kazuyuki Kakuta ,  Toshihiko Onozuka ,  Shigeru Matsui ,  Yoshisada Ebata ,  Norio Hasegawa

发明人： Kazuyuki Kakuta ,  Toshihiko Onozuka ,  Shigeru Matsui ,  Yoshisada Ebata ,  Norio Hasegawa

IPC分类号： H01L21/3065 ,  G03F1/26 ,  H01L21/308

CPC分类号： H01L21/3065 ,  G03F1/0046 ,  G03F1/26 ,  G03F1/28 ,  G03F1/30 ,  H01L21/3085

摘要： A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer.

摘要翻译： 通过使用相移掩模形成非对称图案的技术，以及制造衍射光栅和半导体器件的技术，能够提高产品的精度并能缩短制造时间。 在通过使用相移掩模（其中周期性地布置有遮光部分和透光部分）制造衍射光栅的方法中，从照明光源发射的光透射穿过相移掩模，并且光致抗蚀剂在 通过提供由通过该相移掩模的透射产生的零衍射级光和正的第一衍射级光之间的干涉而暴露于Si晶片的表面到Si晶片的表面上的衍射光栅和具有闪耀十字 在Si晶片上形成截面形状。

公开(公告)号：US20140030638A1

公开(公告)日：2014-01-30

申请号：US13561410

申请日：2012-07-30

申请人： Chang Ju Choi

发明人： Chang Ju Choi

IPC分类号： G03F1/26

CPC分类号： G03F1/26 ,  G03F1/28

摘要： Techniques are disclosed for enhancing critical dimension (CD) resolution in photomask processing. In some cases, the techniques can be implemented, for instance, to enhance space and line pattern resolution independently on a given phase-shifting photomask (PSM). The disclosed techniques can be implemented, for example, to extend existing photolithography techniques/technologies (e.g., 193 nm photolithography) to additional process nodes. For instance, some embodiments can be used to produce extremely high-resolution photomasks which generate features having sizes in the 10 nm node and beyond. The disclosed techniques can be implemented in the fabrication of a wide range of integrated circuits (ICs) and other devices.

摘要翻译： 公开了用于增强光掩模处理中的临界尺寸（CD）分辨率的技术。 在一些情况下，可以实现这些技术，例如，在给定的相移光掩模（PSM）上独立地增强空间和线图案分辨率。 所公开的技术可以实现为例如将现有的光刻技术/技术（例如，193nm光刻）扩展到附加工艺节点。 例如，可以使用一些实施例来产生极高分辨率的光掩模，其产生具有在10nm节点和更大尺寸内的特征。 所公开的技术可以在制造宽范围的集成电路（IC）和其他装置中实现。

公开(公告)号：US20130329203A1

公开(公告)日：2013-12-12

申请号：US13885808

申请日：2011-11-16

申请人： Harun H. Solak ,  Francis Clube

发明人： Harun H. Solak ,  Francis Clube

IPC分类号： G03F7/20

CPC分类号： G03F7/70058 ,  G03F1/28 ,  G03F7/70408

摘要： A method for printing a periodic pattern having a first symmetry and a first period into a photosensitive layer. The method includes providing a mask bearing a pattern of at least two overlapping sub-patterns which have a second symmetry and a second period, the features of each sub-pattern being formed in a transmissive material, providing a substrate bearing the layer, arranging the mask with a separation from the substrate, providing light having a central wavelength for illuminating the mask to generate a light-field in which light of the central wavelength forms a range of intensity distributions between Talbot planes, illuminating said mask pattern with said light while maintaining the separation or changing it by a distance whereby the photosensitive layer is exposed to an average of the range of intensity distributions, wherein the light transmitted by each sub-pattern is shifted in phase relative to that transmitted by another sub-pattern.

摘要翻译： 一种用于将具有第一对称性和第一周期的周期性图案印刷到感光层中的方法。 该方法包括提供具有至少两个具有第二对称性和第二周期的重叠子图案的图案的掩模，每个子图案的特征形成在透射材料中，提供承载该层的基底， 掩模，与衬底分离，提供具有用于照亮掩模的中心波长的光以产生光场，其中中心波长的光形成Talbot平面之间的强度分布范围，用所述光照亮所述掩模图案，同时保持 分离或改变一段距离，由此光敏层暴露于强度分布范围的平均值，其中由每个子图案发送的光相对于由另一子图案传输的光相位移位。