公开(公告)号：US20150040079A1

公开(公告)日：2015-02-05

申请号：US13954635

申请日：2013-07-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Hung Chen ,  Jaw-Jung Shin ,  Shy-Jay Lin ,  Wen-Chuan Wang ,  Pei-Yi Liu ,  Burn Jeng Lin

IPC: G06F17/50

CPC classification number: G03F1/78 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771

Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a feature; fracturing the feature into a plurality of polygons that includes a first polygon; assigning target points to edges of the first polygon; calculating corrected exposure doses to the first polygon, wherein each of the correct exposure doses is determined based on a respective one of the target points by simulation; determining a polygon exposure dose to the first polygon based on the corrected exposure doses; and preparing a tape-out data for lithography patterning, wherein the tape-out data defines the plurality of polygons and a plurality of polygon exposure doses paired with the plurality of polygons.

Abstract translation: 本公开提供了集成电路（IC）方法的一个实施例。 该方法包括接收具有特征的IC设计布局; 将特征压裂成包括第一多边形的多个多边形; 将目标点分配给第一多边形的边缘; 计算第一多边形的校正曝光剂量，其中通过模拟基于目标点中的相应一个确定每个正确的曝光剂量; 基于所述校正的曝光剂量确定所述第一多边形的多边形曝光剂量; 以及准备用于光刻图案化的输出数据，其中所述输出数据定义所述多个多边形以及与所述多个多边形配对的多个多边形曝光剂量。

公开(公告)号：US20140359542A1

公开(公告)日：2014-12-04

申请号：US14331008

申请日：2014-07-14

Applicant: D2S, INC.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: G06F17/50 ,  H01J37/317

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  G03F7/2063 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

公开(公告)号：US20140124684A1

公开(公告)日：2014-05-08

申请号：US14066940

申请日：2013-10-30

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi MATSUMOTO ,  Tomohiro Iijima ,  Munehiro Ogasawara ,  Hideo Inoue ,  Ryoichi Yoshikawa

IPC: H01J37/317

CPC classification number: H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

Abstract translation: 多带电粒子束写入方法包括：对于多束带电粒子束中的每个束，针对相关束的单个消隐系统，对于多个照射束的每次照射，执行光束的ON / OFF切换 次，通过使用多个单独的消隐系统，分别执行多光束中相应光束的光束ON / OFF控制，以及执行消隐控制，除了通过对每个光束的光束进行ON / OFF切换 单个消隐系统相对于每次照射多次照射，使得在对应于照射的照射时间期间光束处于ON状态，通过使用共同执行光束ON的公共消隐系统 / OFF控制整个多光束。

公开(公告)号：US08703389B2

公开(公告)日：2014-04-22

申请号：US13168953

申请日：2011-06-25

Applicant: Akira Fujimura ,  Ingo Bork

Inventor： Akira Fujimura ,  Ingo Bork

IPC: G03F1/20 ,  G03C5/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/2037 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01L21/027 ,  Y10S430/143

Abstract: In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). At least some shots in the plurality of shots overlap other shots. In some embodiments, βf is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to βf expands the process window for the charged particle beam lithography process.

Abstract translation: 在用于对带电粒子束光刻进行压裂或掩模数据准备或掩模处理校正的方法中，确定将在表面上形成图案的多个镜头，其中确定镜头，以便将所得到的图案的灵敏度降低到 光束模糊（＆bgr; f）。 多个镜头中的至少一些镜头重叠其他镜头。 在一些实施例中，通过在初始拍摄确定期间或在后处理步骤中控制多个拍摄中的拍摄重叠量来减小图像f。 对“bgr”的灵敏度降低扩大了带电粒子束光刻工艺的工艺窗口。

公开(公告)号：US20140065548A1

公开(公告)日：2014-03-06

申请号：US13958788

申请日：2013-08-05

Applicant: CANON KABUSHIKI KAISHA

Inventor： Chiaki SATO

IPC: G06T5/00

CPC classification number: G06T5/006 ,  B82Y10/00 ,  B82Y40/00 ,  G06T11/60 ,  H01J37/3177 ,  H01J2237/31771

Abstract: A lithography apparatus converts vector pattern data into bitmap data and performs writing on a substrate with a charged particle beam based on the bitmap data. Here, the lithography apparatus includes a display unit and a processing unit that causes the display unit to display an image corresponding to the bitmap data and performs processing for updating the bitmap data by changing at least one of a pixel value, dimension, and shape of the image displayed on the display unit via a graphical user interface.

Abstract translation: 光刻设备将矢量图案数据转换成位图数据，并且基于位图数据在带有带电粒子束的基板上执行写入。 这里，光刻设备包括显示单元和处理单元，其使得显示单元显示与位图数据相对应的图像，并且通过改变位图数据的像素值，尺寸和形状中的至少一个来执行用于更新位图数据的处理 通过图形用户界面显示在显示单元上的图像。

公开(公告)号：US20130252143A1

公开(公告)日：2013-09-26

申请号：US13894349

申请日：2013-05-14

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Stephen F. Meier ,  Ingo Bork

IPC: G06F17/50

CPC classification number: G06F17/5045 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/36 ,  G03F1/68 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.

Abstract translation: 提出了一种用于压裂或掩模数据准备的方法和系统，其中产生重叠射击以增加图案的选定部分中的剂量，从而改善转印图案的保真度和/或临界尺寸变化。 在各种实施例中，改进可能影响路径或线的端部，或方形或近似正方形的图案。 模拟用于确定将在表面上产生的图案。

公开(公告)号：US20120221985A1

公开(公告)日：2012-08-30

申请号：US13037263

申请日：2011-02-28

Applicant: Akira Fujimura

Inventor： Akira Fujimura

IPC: G06F17/50

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method and system for fracturing or mask data preparation are disclosed which can reduce the critical dimension variation of patterns formed on a resist-coated surface using particle beam lithography by providing a higher peak dosage near the perimeter of the patterns than in the interiors of the patterns.

Abstract translation: 公开了用于压裂或掩模数据准备的方法和系统，其可以通过在图案的周边附近提供比在图案的内部提供更高的峰值剂量来减少使用粒子束光刻形成在抗蚀剂涂覆的表面上的图案的临界尺寸变化 模式。

公开(公告)号：US20120221980A1

公开(公告)日：2012-08-30

申请号：US13037268

申请日：2011-02-28

Applicant: Akira Fujimura ,  Kazuyuki Hagiwara ,  Stephen F. Meier ,  Ingo Bork

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Stephen F. Meier ,  Ingo Bork

IPC: G06F17/50

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/68 ,  H01J37/3026 ,  H01J2237/31769 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.

Abstract translation: 提出了一种用于压裂或掩模数据准备的方法和系统，其中产生重叠射击以增加图案的选定部分中的剂量，从而改善转印图案的保真度和/或临界尺寸变化。 在各种实施例中，改进可能影响路径或线的端部，或方形或近似正方形的图案。 模拟用于确定将在表面上产生的图案。

公开(公告)号：US20120219886A1

公开(公告)日：2012-08-30

申请号：US13329315

申请日：2011-12-18

Applicant: Akira Fujimura ,  Harold Robert Zable

Inventor： Akira Fujimura ,  Harold Robert Zable

IPC: G03F1/78 ,  H01L21/77 ,  G03F7/20 ,  A61N5/06

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/70 ,  G03F1/78 ,  G03F7/20 ,  G03F7/2037 ,  G03F7/2063 ,  G03F7/7025 ,  G06F17/50 ,  G06F17/5068 ,  G06F17/5081 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  Y10S430/143

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract translation: 公开了一种用于压裂或掩模数据准备或光学邻近校正或接近效应校正或掩模处理校正的方法和系统，其中确定一组成形的射束，其能够在表面上形成图案，其中所述一组镜头 对图案的不同部分提供不同的剂量，并且计算来自该组照射的剂量余量。 还公开了在表面上形成图案的方法。

公开(公告)号：US20120211674A1

公开(公告)日：2012-08-23

申请号：US13370835

申请日：2012-02-10

Applicant: Yasuo KATO

Inventor： Yasuo KATO

IPC: G21K5/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01J2237/31796

Abstract: A charged particle beam writing apparatus includes a storage unit to store each pattern data of plural figure patterns arranged in each of plural small regions made by virtually dividing a writing region of a target workpiece to be written on which resist being coated. The charged particle beam writing apparatus further including an assignment unit to assign each pattern data of each figure pattern to be arranged in each of the plural small regions concerned, and a writing unit to write, for each of plural groups, each figure pattern in each of the plural small regions concerned by using a charged particle beam.

Abstract translation: 带电粒子束写入装置包括：存储单元，用于存储多个图形图案中的每个图案数据，所述多个图形图案布置在通过实际上划分要涂覆的抗蚀剂的目标工件的写入区域而制成的多个小区域中。 所述带电粒子束写入装置还包括分配单元，用于分配要布置在所述多个小区域中的每一个中的每个图形模式的每个图案数据;以及写入单元，用于为每个所述多个组中的每一个写入每个图形模式 的多个小区域使用带电粒子束。