公开(公告)号：US20120247675A1

公开(公告)日：2012-10-04

申请号：US13435552

申请日：2012-03-30

Applicant: Taro IKEDA ,  Tomohito KOMATSU ,  Shigeru KASAI

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Shigeru KASAI

IPC: H01L21/3065 ,  H01Q13/10

CPC classification number: H01J37/3222 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32449 ,  H05H1/46 ,  H05H2001/463

Abstract: A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.

Abstract translation: 等离子体发生天线和等离子体处理装置可以有效地提供气体和电磁波。 等离子体处理装置10包括其中执行等离子体处理的处理室100; 构造成透射电磁波的波长缩短板480; 以及等离子体产生天线200，其具有与波长缩短板480相邻设置的淋浴喷头210.喷头210由导体制成，并具有多个气孔215和多个槽220，电磁 波通。 槽220设置在与气孔215隔开的位置处。

公开(公告)号：US08091506B2

公开(公告)日：2012-01-10

申请号：US12660445

申请日：2010-02-26

Applicant: Anatoly Leontievich Vikharev ,  Aleksey Mikhaylovich Gorbachev ,  Aleksandr Grigorievich Litvak ,  Juriy Vladmirovich Bykov ,  Grigory Gennadievich Denisov ,  Oleg Andreevich Ivanov ,  Vladimir Aleksandrovich Koldanov

Inventor： Anatoly Leontievich Vikharev ,  Aleksey Mikhaylovich Gorbachev ,  Aleksandr Grigorievich Litvak ,  Juriy Vladmirovich Bykov ,  Grigory Gennadievich Denisov ,  Oleg Andreevich Ivanov ,  Vladimir Aleksandrovich Koldanov

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C16/274 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32431

Abstract: The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle δ equal to or less than 3×10−5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz. In order to localize the plasma, a standing wave is formed near the carrier and plasma layers are formed in the antinodes thereof in such a way that the sizes thereof are adjustable.

Abstract translation: 本发明涉及借助SHF放电等离子体分解气态化合物的碳沉积。 本发明确保高品质金刚石膜的高速沉积（在直径等于或大于100mm的载体上具有等于或小于3×10-5的损耗角切割角δ），因此，SHF 在气体混合物中引发放电，该气体混合物布置在具有频率f的频率f的反应室中，该频率比2.45GHz的常用频率（例如30GHz）高出许多倍，为了定位等离子体，在等离子体附近形成驻波 载体和等离子体层以其尺寸可调节的方式形成在其波腹中。

公开(公告)号：US20100001744A1

公开(公告)日：2010-01-07

申请号：US12375225

申请日：2007-07-18

Applicant: Masaki Hirayama ,  Tadahiro Ohmi

Inventor： Masaki Hirayama ,  Tadahiro Ohmi

IPC: G01R27/32

CPC classification number: C23C16/511 ,  C23C16/345 ,  C23C16/52 ,  G01R1/24 ,  H01J37/32211 ,  H05H1/46

Abstract: [Problem] To precisely measure a standing wave to be an indication for comprehending a guide wavelength λg or the like in a waveguide.[Means for Solving] A distribution of temperatures is detected in a conductive member forming at least a part of pipe walls of a waveguide with respect to a longitudinal direction of a waveguide which propagates an electromagnetic wave, and a standing wave generated in the waveguide is measured based on the temperature distribution. The temperature distribution in the conductive member with respect to the longitudinal direction of the waveguide can be measured precisely with a plurality of temperature sensors disposed along the longitudinal direction of the waveguide, a temperature sensor which moves along the longitudinal direction of the waveguide, or an infrared camera.

Abstract translation: [问题]精确地测量驻波作为在波导管中理解引导波长兰博丹等的指示。 [解决方案]在形成波导管壁的至少一部分的导电构件中，相对于传播电磁波的波导的纵向方向检测温度分布，并且在波导中产生的驻波为 基于温度分布测量。 导电部件相对于波导的长度方向的温度分布可以通过沿着波导的长度方向配置的多个温度传感器，沿着波导的长度方向移动的温度传感器，或 红外摄像机

公开(公告)号：US20090278054A1

公开(公告)日：2009-11-12

申请号：US12504525

申请日：2009-07-16

Applicant: Mohammad Kamarehi ,  Ing-Yann Albert Wang

Inventor： Mohammad Kamarehi ,  Ing-Yann Albert Wang

IPC: H01J27/00

CPC classification number: H05H1/46 ,  H01J37/32211 ,  H01J37/32357

Abstract: A method for minimizing microwave leakage into processing chamber of a microwave plasma system is provided. The method includes securing plasma traps to a plasma tube assembly, which is a cylindrical structure positioned upstream from the processing chamber and has a plasma-sustaining region. The plasma traps are electrically conductive disks surrounding the cylindrical structure and are positioned upstream from the processing chamber. The plasma traps include at least two electrically conductive disks. Each electrically conductive disk includes corrugated outer surfaces with plurality of corrugated peaks. The corrugated outer surface of the first electrically conductive disk is facing a corrugated outer surface of the second electrically conductive disk in a space-apart relationship to form an interstitial region between the electrically conductive disks. Both electrically conductive disk and the interstitial region form one of a set of upstream plasma traps and a set of downstream plasma traps relative to the plasma-sustaining region.

Abstract translation: 提供了一种使微波泄漏到微波等离子体系统的处理室中的方法。 该方法包括将等离子体捕集阱固定到等离子体管组件，等离子体管组件是位于处理室上游的具有等离子体维持区域的圆柱形结构。 等离子体捕集器是围绕圆柱形结构并且位于处理室的上游的导电盘。 等离子体捕集器包括至少两个导电盘。 每个导电盘包括具有多个波纹峰的波纹状外表面。 第一导电盘的波纹状外表面以空间分开的关系面对第二导电盘的波纹状外表面，以形成导电盘之间的间隙区。 导电盘和间隙区形成一组上游等离子体捕集器和相对于等离子体维持区域的一组下游等离子体阱。

公开(公告)号：US07302910B2

公开(公告)日：2007-12-04

申请号：US10467821

申请日：2002-02-15

Applicant: Nobuo Ishii

Inventor： Nobuo Ishii

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32211 ,  H01J37/32192

Abstract: A plasma apparatus includes a container (11) having an opening, a dielectric member (13) supported by an end surface of an outer periphery of the opening of the container (11), an electromagnetic field supplying means for supplying an electromagnetic field into the container (11) through the dielectric member (13), and a shield member (12) covering the outer periphery of the dielectric member (13) and shielding the electromagnetic field. A distance L1 from an inner surface of the container (11) to an inner surface of the shield member (12) at an end surface of the container (11) is approximately N/2 (N is an integer not smaller than 0) times the wavelength of the electromagnetic field in an area (18) surrounded by the end surface of the container (11), the electromagnetic field supplying means and the shield member (12).

Abstract translation: 等离子体装置包括具有开口的容器（11），由容器（11）的开口的外周的端面支撑的电介质构件（13），电磁场供给装置，用于向 通过电介质构件（13）的容器（11）和覆盖电介质构件（13）的外周并屏蔽电磁场的屏蔽构件（12）。 从容器（11）的内表面到容器（11）的端面处的屏蔽构件（12）的内表面的距离L L1大约为N / 2（N是 在由容器（11）的端面，电磁场供给装置和屏蔽部件（12）所包围的区域（18）内的电磁场的波长的值不小于0的整数。

公开(公告)号：US20070176709A1

公开(公告)日：2007-08-02

申请号：US11343682

申请日：2006-01-31

Applicant: Lutfi Oksuz ,  Albert Ellingboe

Inventor： Lutfi Oksuz ,  Albert Ellingboe

IPC: H01P5/18

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32201 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/463

Abstract: A method and apparatus for producing a distributed plasma at atmospheric pressure. A distributed plasma can be produced at atmospheric pressure by using an inexpensive high frequency power source in communication with a waveguide having a plurality particularly configured couplers disposed therein. The plurality of particularly arranged couplers can be configured in the waveguide to enhance the electromagnetic field strength therein. The plurality of couplers have internal portions disposed inside the waveguide and spaced apart by a distance of ½ wavelength of the high frequency power source and external portions disposed outside the waveguide and spaced apart by a predetermined distance which is calculated to cause the electromagnetic fields in the external portions of adjacent couplers to couple and thereby further enhance the strength of the electromagnetic field in the waveguide. Plasma can be formed in plasma areas defined by gaps between electrodes disposed on the external portions.

Abstract translation: 一种用于在大气压下制造分布式等离子体的方法和装置。 通过使用与具有设置在其中的多个特别配置的耦合器的波导连通的便宜的高频电源，可以在大气压下产生分布式等离子体。 多个特别布置的耦合器可以配置在波导中以增强其中的电磁场强度。 多个耦合器具有设置在波导内部的内部部分，并且间隔开高频电源的1/2波长的距离和设置在波导外部的外部部分，并隔开预定距离，该预定距离被计算为使得电磁场在 相邻耦合器的外部部分耦合，从而进一步增强波导中电磁场的强度。 等离子体可以形成在由设置在外部部分上的电极之间的间隙限定的等离子体区域中。

公开(公告)号：US07232502B2

公开(公告)日：2007-06-19

申请号：US10250907

申请日：2002-01-09

Applicant: Hachishiro Iizuka

Inventor： Hachishiro Iizuka

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01L21/67017 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/4583 ,  C23C16/4586 ,  H01J37/32192 ,  H01J37/32211

Abstract: A processing unit of the invention is a single wafer processing unit including: a processing container that can be vacuumed; a stage arranged in the processing container, on which an object to be processed can be placed; a discharging pipe connected to a bottom part of the processing container and extending substantially downward linearly; a vacuum pump directly connected to the discharging pipe; and a stage-supporting pillar arranged to extend in a substantially central portion of the discharging pipe and in a direction of the discharging pipe, the stage-supporting pillar supporting the stage.

Abstract translation: 本发明的处理单元是单晶片处理单元，其包括：可被抽真空的处理容器; 布置在处理容器中的能够放置待处理物体的台阶; 排出管，其连接到处理容器的底部并且基本上向下线性延伸; 直接连接到排放管的真空泵; 以及台架支柱，其设置成在排出管的大致中央部分和排出管的方向上延伸，支撑台支撑支柱。

公开(公告)号：US20060237646A1

公开(公告)日：2006-10-26

申请号：US10543151

申请日：2004-01-27

Applicant: Kenji Watanabe ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Yoshinao Hirabayashi ,  Tohru Satake ,  Nobuharu Noji ,  Yuichiro Yamazaki ,  Ichirota Nagahama

Inventor： Kenji Watanabe ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Yoshinao Hirabayashi ,  Tohru Satake ,  Nobuharu Noji ,  Yuichiro Yamazaki ,  Ichirota Nagahama

IPC: G21K7/00

CPC classification number: H01J37/32211 ,  G01N23/225 ,  H01J37/32357 ,  H01J2237/2441 ,  H01J2237/2446

Abstract: An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface.

公开(公告)号：US20060110546A1

公开(公告)日：2006-05-25

申请号：US10526800

申请日：2003-09-18

Applicant: Anatoly Vikharev ,  Aleksey Gorbachev ,  Aleksandr Litvak ,  Juriy Bykov ,  Grigory Denisov ,  Oleg Ivanov ,  Vladimir Koldanov

Inventor： Anatoly Vikharev ,  Aleksey Gorbachev ,  Aleksandr Litvak ,  Juriy Bykov ,  Grigory Denisov ,  Oleg Ivanov ,  Vladimir Koldanov

IPC: H05H1/46 ,  C23C16/00

CPC classification number: C23C16/274 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32431

Abstract: The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle □ equal to or less than 3×10−5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber and contains at least hydrogen and hydrocarbon. Afterwards, said gas mixture is activated by producing a stable nonequilibrium plasma with the aid of SHF radiation having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz. In order to localize the plasma, a standing wave is formed near the carrier and plasma layers are formed in the antinodes thereof in such a way that the sizes thereof are adjustable.

Abstract translation: 本发明涉及通过在SHF放电等离子体的帮助下分解气态化合物的碳沉积，并且可以用于制备用于产生功率SHF源的输出​​窗口的多晶金刚石膜（板），例如陀螺仪 。 本发明确保高品质金刚石薄膜的高速沉积（在直径等于或高于100mm的载体上具有等于或小于3×10 -5的损耗切线角度） 这个目的是在配置在反应室中并至少包含氢和烃的气体混合物中引发SHF放电，然后借助于具有频率f的SHF辐射产生稳定的非平衡等离子体来激活所述气体混合物 比常用的2.45GHz的频率（例如30GHz）高出许多倍，为了使等离子体定位，在载体附近形成驻波，在其波腹中形成等离子体层，使得其尺寸 可调节。

公开(公告)号：US20060065629A1

公开(公告)日：2006-03-30

申请号：US10954086

申请日：2004-09-30

Applicant: Lee Chen ,  Hitomitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

Inventor： Lee Chen ,  Hitomitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC: C23F1/00 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01J37/32706 ,  H01J37/32211 ,  H01J37/3244 ,  H01L21/31116

Abstract: A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

Abstract translation: 处理衬底的方法包括将衬底设置在具有被配置为限定等离子体空间的第一室部分的处理室中，以及构造成限定处理空间的第二室部分，将第一气体引入等离子体空间并引入第二气体 到过程空间。 在等离子体空间中，使用与上室部分相连的等离子体源，在等离子体空间中形成等离子体，通过提供位于第一室部分和第二部分之间的格栅，在处理空间中形成用于处理基板的工艺化学品 室部分，使得等离子体可以从等离子体空间扩散到处理空间。