公开(公告)号：US20140264515A1

公开(公告)日：2014-09-18

申请号：US14205481

申请日：2014-03-12

申请人： Acreo Swedish ICT AB

发明人： Simone FABIANO ,  Xavier CRISPIN ,  Magnus BERGGREN

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/78 ,  H01L29/66477 ,  H01L51/0003 ,  H01L51/052 ,  H01L51/0529

摘要： A ferroelectric field-effect transistor device includes: a semiconductor layer; a ferroelectric layer; and an ion conductor layer arranged between the semiconductor layer and the ferroelectric layer and in contact with the semiconductor layer. Methods for producing the ferroelectric field-effect transistor device and using the ferroelectric field-effect transistor device in non-volatile memory devices are also disclosed.

摘要翻译： 铁电场效应晶体管器件包括：半导体层; 铁电层; 以及布置在所述半导体层和所述铁电层之间并与所述半导体层接触的离子导体层。 还公开了制造铁电场效应晶体管器件和在非易失性存储器件中使用铁电场效应晶体管器件的方法。

公开(公告)号：US20140159026A1

公开(公告)日：2014-06-12

申请号：US14130940

申请日：2013-06-05

申请人： PANASONIC CORPORATION

发明人： Yuko Okumoto ,  Akihito Miyamoto

IPC分类号： H01L51/05 ,  H01L27/32

CPC分类号： H01L51/0529 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/786 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2251/5315

摘要： A thin-film transistor including: a gate electrode that is located above a substrate; a gate insulating layer that faces the gate electrode; a partition that defines an opening and has higher liquid repellency than liquid repellency of the gate insulating layer, the opening having a surface of the gate insulating layer therewithin; a semiconductor layer that faces the gate electrode with the gate insulating layer interposed therebetween and is formed within the opening by an application method; a source electrode and a drain electrode that are electrically connected to the semiconductor layer; and an intermediate layer that is made of the same material as a material of the partition and is located between the gate insulating layer and the semiconductor layer, wherein the intermediate layer is discretely present above the gate insulating layer.

摘要翻译： 1.一种薄膜晶体管，包括：位于基板上方的栅电极; 面对栅电极的栅极绝缘层; 限定开口并具有比栅极绝缘层的液体排斥性更高的液体排斥性的隔板，该开口具有栅极绝缘层的表面; 面向栅电极的半导体层，其间具有栅极绝缘层，并通过施加方法形成在开口内; 源电极和漏电极，其电连接到所述半导体层; 以及由与所述隔板的材料相同的材料制成并且位于所述栅极绝缘层和所述半导体层之间的中间层，其中所述中间层离散地存在于所述栅极绝缘层的上方。

公开(公告)号：US08735895B2

公开(公告)日：2014-05-27

申请号：US12902783

申请日：2010-10-12

申请人： Tae-Whan Kim ,  Won-il Park ,  Dong-Ick Son ,  Jae-Ho Shim ,  Jung-Min Lee ,  Jae-Hun Jung

发明人： Tae-Whan Kim ,  Won-il Park ,  Dong-Ick Son ,  Jae-Ho Shim ,  Jung-Min Lee ,  Jae-Hun Jung

IPC分类号： H01L29/10

CPC分类号： H01L29/78684 ,  H01L51/0045 ,  H01L51/0529 ,  H01L51/0591

摘要： Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.

摘要翻译： 提供一种电子器件及其制造方法，电子器件包括器件衬底，堆叠结构和电极。 层叠结构包括在第一绝缘体和第二绝缘体之间的石墨烯薄膜。 电极设置在层叠结构之上。

公开(公告)号：US08670081B2

公开(公告)日：2014-03-11

申请号：US11881167

申请日：2007-07-25

申请人： Joon-Young Yang

发明人： Joon-Young Yang

IPC分类号： G02F1/136 ,  G02F1/1333 ,  H01L51/40 ,  H01L21/00 ,  H01L21/84 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0529 ,  G02F1/1362 ,  G02F2202/02 ,  H01L51/0036 ,  H01L51/0541

摘要： An array substrate for a liquid crystal display device includes a data line formed on a substrate including a pixel region; a source electrode extending from the data line; a drain electrode separated from the source electrode; a pixel electrode contacting the drain electrode and formed of a transparent conductive material in the pixel region; an organic semiconductor layer on the source and drain electrodes; a first gate insulating layer of an organic insulating material on the organic semiconductor layer; a second gate insulting layer of an inorganic insulating material on entire surface of the substrate including the first gate insulating layer; a gate line formed on the second gate insulating layer and crossing the data line to define the pixel region; and a gate electrode on the second gate insulating layer extending from the gate line and corresponding to the organic semiconductor layer.

摘要翻译： 液晶显示装置用阵列基板包括形成在包括像素区域的基板上的数据线; 源极，从数据线延伸; 与源电极分离的漏电极; 在所述像素区域中与所述漏极接触并由透明导电材料形成的像素电极; 源极和漏极上的有机半导体层; 在有机半导体层上的有机绝缘材料的第一栅极绝缘层; 在包括所述第一栅极绝缘层的所述基板的整个表面上的无机绝缘材料的第二栅极绝缘层; 栅极线，形成在所述第二栅极绝缘层上并与所述数据线交叉以限定所述像素区域; 以及在栅极线上延伸并对应于有机半导体层的第二栅极绝缘层上的栅电极。

公开(公告)号：US20130270534A1

公开(公告)日：2013-10-17

申请号：US13877441

申请日：2011-10-05

申请人： Do Kyung Hwang ,  Jungbae Kim ,  Canek Fuentes-Hernandez ,  Bernard Kippelen

发明人： Do Kyung Hwang ,  Jungbae Kim ,  Canek Fuentes-Hernandez ,  Bernard Kippelen

IPC分类号： H01L51/05

CPC分类号： H01L51/0529 ,  H01L51/0053 ,  H01L51/0071 ,  H01L51/0533 ,  H01L51/0545

摘要： A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.

摘要翻译： 场效应晶体管包括栅极，源极和漏极; 源极和漏极之间的半导体层; 以及栅极和半导体层之间的栅极绝缘体。 栅极绝缘体包括邻接半导体层的第一层; 和第二层。 第一层由具有第一介电常数和第一厚度的无定形含氟聚合物形成。 第二层具有第二介电常数和第二厚度。 第一介电常数小于3，第一厚度小于200nm，第二介电常数高于5，第二厚度小于500nm。

公开(公告)号：US20120138930A1

公开(公告)日：2012-06-07

申请号：US13076507

申请日：2011-03-31

申请人： Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

发明人： Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0529 ,  H01L51/0541 ,  H01L51/102

摘要： An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

摘要翻译： 公开了一种有机薄场晶体管。 有机薄场晶体管包括第一和第二绝缘层，金属结构和用作有源层的有机层。 第一和第二绝缘层的材料是不同的，并且通过进行蚀刻工艺，金属结构的表面和第二绝缘层的表面被有效地对准。 由于金属结构和第二绝缘层的表面的平坦度高，有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善，从而获得更好的电特性。

公开(公告)号：US08106387B2

公开(公告)日：2012-01-31

申请号：US12250691

申请日：2008-10-14

申请人： Yiliang Wu ,  Ping Liu ,  Yuning Li ,  Paul F. Smith

发明人： Yiliang Wu ,  Ping Liu ,  Yuning Li ,  Paul F. Smith

IPC分类号： H01L51/30

CPC分类号： H01L51/0529 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： Organic thin film transistors with improved mobility are disclosed. The transistor contains two interfacial layers between the dielectric layer and the semiconducting layer. One interfacial layer is formed from a siloxane polymer or silsesquioxane polymer. The other interfacial layer is formed from an alkyl-containing silane of Formula (I): where R′ is alkyl having from about 1 to about 24 carbon atoms; R″ is alkyl having from about 1 to about 24 carbon atoms, halogen, alkoxy, hydroxyl, or amino; L is halogen, oxygen, alkoxy, hydroxyl, or amino; k is 1 or 2; and m is 1 or 2.

摘要翻译： 公开了具有改进的移动性的有机薄膜晶体管。 晶体管在介电层和半导体层之间包含两个界面层。 一个界面层由硅氧烷聚合物或倍半硅氧烷聚合物形成。 另一界面层由式（I）的含烷基的硅烷形成：其中R'为具有约1至约24个碳原子的烷基; R“是具有约1至约24个碳原子的烷基，卤素，烷氧基，羟基或氨基; L是卤素，氧，烷氧基，羟基或氨基; k为1或2; m为1或2。

公开(公告)号：US08089115B2

公开(公告)日：2012-01-03

申请号：US12302200

申请日：2007-05-22

申请人： Wei Lin Leong ,  Pooi See Lee ,  Yeng Ming Lam ,  Lixin Song ,  Ebinazar Benjamin Namdas ,  G. Subodh Mhaisalkar

发明人： Wei Lin Leong ,  Pooi See Lee ,  Yeng Ming Lam ,  Lixin Song ,  Ebinazar Benjamin Namdas ,  G. Subodh Mhaisalkar

IPC分类号： H01L29/788

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/55 ,  G11C2213/56 ,  H01L21/28273 ,  H01L51/0529 ,  H01L51/0537 ,  Y10S977/783 ,  Y10S977/943

摘要： An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

摘要翻译： 公开了一种有机存储器件，其具有活性层，有机电介质材料的膜的至少一个电荷存储层和介电材料膜上或电介质材料膜中的电荷存储材料的纳米颗粒和/或纳米颗粒。 通过有机介电膜的有机介电材料将纳米结构和/或纳米颗粒中的每一个与纳米结构和/或纳米颗粒中的其它纳米结构和/或纳米颗粒分离。 还公开了一种制造有机存储器件的方法。

公开(公告)号：US20110101365A1

公开(公告)日：2011-05-05

申请号：US12902783

申请日：2010-10-12

申请人： Tae-Whan Kim ,  Won-il Park ,  Dong-Ick Son ,  Jae-Ho Shim ,  Jung-Min Lee ,  Jae-Hun Jung

发明人： Tae-Whan Kim ,  Won-il Park ,  Dong-Ick Son ,  Jae-Ho Shim ,  Jung-Min Lee ,  Jae-Hun Jung

IPC分类号： H01L29/786

CPC分类号： H01L29/78684 ,  H01L51/0045 ,  H01L51/0529 ,  H01L51/0591

摘要： Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.

摘要翻译： 提供一种电子器件及其制造方法，电子器件包括器件衬底，堆叠结构和电极。 层叠结构包括在第一绝缘体和第二绝缘体之间的石墨烯薄膜。 电极设置在层叠结构之上。

公开(公告)号：US20100164918A1

公开(公告)日：2010-07-01

申请号：US12160814

申请日：2006-12-27

申请人： Hiroshi Kondo

发明人： Hiroshi Kondo

IPC分类号： G11C5/14 ,  G06F3/038

CPC分类号： H01L51/0554 ,  H01L27/283 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0003 ,  H01L51/0023 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/105

摘要： A disclosed electronic element includes: a substrate; a first electrode layer formed on a portion of the substrate; an insulating layer formed on the first electrode layer; a conductive layer formed on the insulating layer formed on an area where the first electrode layer is formed; a second electrode layer formed on one area where the first electrode layer on the substrate is not formed; a third electrode layer formed on the other area where neither the first electrode layer on the substrate nor the second electrode layer is formed; and a semiconductor layer formed so as to cover between the conductive layer and the second electrode layer and to cover between the conductive layer and the third electrode layer.

摘要翻译： 所公开的电子元件包括：基板; 形成在所述基板的一部分上的第一电极层; 形成在所述第一电极层上的绝缘层; 形成在形成有所述第一电极层的区域上的所述绝缘层上的导电层; 在不形成基板上的第一电极层的一个区域上形成的第二电极层; 形成在基板上的第一电极层和第二电极层都不形成的另一区域上的第三电极层; 以及形成为覆盖在导电层和第二电极层之间并覆盖在导电层和第三电极层之间的半导体层。