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510 条记录 (耗时 0.016 秒)

    Solidification of molten materials
    62.
    发明授权
    Solidification of molten materials 失效
    熔融材料的凝固

    公开(公告)号：US4394183A

    公开(公告)日：1983-07-19

    申请号：US322575

    申请日：1981-11-18

    申请人： Kenneth A. Jackson ,  Lionel C. Kimerling

    发明人： Kenneth A. Jackson ,  Lionel C. Kimerling

    IPC分类号： C30B13/00 ,  B41J2/135 ,  C30B29/60 ,  H01L21/20 ,  H01L21/208 ,  H01L21/24 ,  H01L21/74

    CPC分类号： H01L21/743 ,  H01L21/24 ,  Y10S117/904 ,  Y10S117/905

    摘要： This invention is a technique for forming a specifically configured region of material which is rejected by an advancing freezing front within a melt. Resolidification of the molten material is effected in such a manner that liquid-solid interfaces intersect so as to control the shape and location of the rejected material which solidifies. Specific embodiments involve the formation of wires, tubes, or planes of enriched rejected material. Applications include the formation of enriched conductive material for making electrical contact between internal or external regions of electronic devices. Additionally, enriched material with etching properties different than that of the surrounding material may be formed and subsequently etched away in micro-machining applications.

    摘要翻译： 本发明是一种用于形成特定配置的材料区域的技术，该材料区域被熔融物内的前进冷冻前端所排斥。 熔融材料的再凝固以液 - 液界面相交的方式进行，以便控制固化的被拒绝材料的形状和位置。 具体实施方案涉及形成富集的拒绝材料的电线，管或平面。 应用包括形成用于在电子器件的内部或外部区域之间进行电接触的富集的导电材料。 此外，具有不同于周围材料的蚀刻性能的富集材料可以形成并随后在微加工应用中被蚀刻掉。

    Zone purification of cylindrical ingots
    63.
    发明授权
    Zone purification of cylindrical ingots 失效
    圆柱锭的区域净化

    公开(公告)号：US4285760A

    公开(公告)日：1981-08-25

    申请号：US88270

    申请日：1979-10-25

    申请人： Jon H. Myer

    发明人： Jon H. Myer

    IPC分类号： C30B13/00 ,  C30B13/14

    CPC分类号： C30B13/14 ,  C30B13/00 ,  C30B29/12 ,  Y10S117/90 ,  Y10S117/918 ,  Y10T117/108

    摘要： Cylindrical ingots of materials that expand on melting or freezing are purified or zone refined by a process which includes providing a tubular container having both a cylindrical cavity and a slot along its entire length. In zone refining, as is well-known, a heater of a predetermined elevated temperature traverses from one end of a normally solid charge to another at least once to thereby sweep impurities to one end of the charge. During the zone refining process, material which expands on phase change (e.g., solid to liquid) flows into the slot. As a consequence, fractures and other damage to the container and/or zone-refined material are minimized. The substantially round cross section is retained following removal of the excess material from the zone refined ingot after solidification.

    摘要翻译： 在熔化或冷冻时膨胀的材料的圆柱形锭通过包括提供沿其整个长度具有圆柱形腔和狭槽的管状容器的方法进行纯化或区域精制。 在区域精炼中，众所周知，预定高温的加热器从正常固体电荷的一端穿过至少一次，从而将杂质洗涤到电荷的一端。 在区域精炼过程中，相变膨胀的材料（例如，固体和液体）流入狭槽。 因此，容器和/或区域精炼材料的破裂和其他损坏被最小化。 在固化后从精制锭中除去多余的材料后，保留基本圆形的横截面。

    Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
    64.
    发明授权
    Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod 失效
    浮选精制半导体晶棒稳定配套设备

    公开(公告)号：US4257841A

    公开(公告)日：1981-03-24

    申请号：US867640

    申请日：1978-01-06

    申请人： John M. Ross ,  Kedar P. Gupta ,  Horst G. Kramer ,  John W. Burd

    发明人： John M. Ross ,  Kedar P. Gupta ,  Horst G. Kramer ,  John W. Burd

    IPC分类号： C30B13/32 ,  C30B13/28 ,  H01L21/208 ,  C30B13/00

    CPC分类号： C30B13/285 ,  Y10S117/911 ,  Y10T117/1056 ,  Y10T117/1072 ,  Y10T117/1084

    摘要： Apparatus and method for stabilizing and supporting a crystal semiconductor rod during fabrication refining from the action of a seed rod on a float zone melt of a crystalline rod source is provided wherein engageable fingers mounted in a vertically movable tube in axial register with the shaft holding the crystal seed rod are pivotally mounted in a non-horizontal upward position, the finger tips being force loaded for inward movement upon removal of a sleeve carrier so that the fingers engage, support, and stabilize the irregular cylindrical surface of the refined semiconductor rod. The tube and fingers are engageable through sleeve and tube piston means resulting in uniform stabilization and support of the crystal refined rod. The apparatus and method prevent the refined rod from vibrating and oscillating about its axis; thus allowing enlarged dislocation free crystal rod growth from a crystalline rod source, said refined crystal rod being grown on a slender seed rod.

    摘要翻译： 提供了一种在结晶棒源的漂浮区熔体上从种棒的作用制造精炼期间稳定和支撑晶体半导体棒的装置和方法，其中可接合的手指安装在可垂直移动的管中，轴与轴保持 晶种杆可枢转地安装在非水平向上的位置，在取下套筒托架时，指尖被加载用于向内运动，使得指状物接合，支撑和稳定精制半导体棒的不规则圆柱形表面。 管和手指可通过套筒和管活塞装置接合，导致晶体细化杆的均匀稳定和支撑。 该装置和方法防止精细杆绕其轴线振动和振荡; 从而允许从结晶棒源扩大无位错晶体棒，所述精制晶棒在细长的种棒上生长。

    Semiconductor device manufacture
    68.
    发明授权
    Semiconductor device manufacture 失效
    半导体器件制造

    公开(公告)号：US4108685A

    公开(公告)日：1978-08-22

    申请号：US783167

    申请日：1977-03-31

    申请人： Mike F. Chang ,  Harvey E. Cline ,  Thomas R. Anthony

    发明人： Mike F. Chang ,  Harvey E. Cline ,  Thomas R. Anthony

    IPC分类号： H01L21/24 ,  C30B13/00 ,  C30B13/02 ,  C30B13/06 ,  C30B13/10 ,  C30B13/34 ,  C30B29/06 ,  H01L21/208 ,  H01L21/761 ,  H01L21/225

    CPC分类号： C30B13/06 ,  C30B13/02 ,  C30B13/10 ,  H01L21/761

    摘要： An improved method of initiating the moving of a molten zone of an aluminum rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies alloying the aluminum metal to the semiconductor material of the surface of the body in contact therewith at a temperature of from 577.degree. to 660.degree. C. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.

    摘要翻译： 引起富铝半导体材料的熔融区域通过相同半导体材料的固体物体移动以形成平面区域的改进方法体现了将铝金属与接触的本体表面的半导体材料合金化 温度为577°至660°C。合金化过程使得能够同时迁移两个或多个相交的“电线”，以及通过身体在共同的原点相交的三条“电线”。

    Method for producing an InSb thin film
    69.
    发明授权
    Method for producing an InSb thin film 失效
    制造InSb薄膜的方法

    公开(公告)号：US4080478A

    公开(公告)日：1978-03-21

    申请号：US603529

    申请日：1975-08-11

    申请人： Naoki Yamamoto ,  Tetsu Oi ,  Kikuji Sato

    发明人： Naoki Yamamoto ,  Tetsu Oi ,  Kikuji Sato

    IPC分类号： H01L43/12 ,  C30B13/00 ,  C30B19/00 ,  H01F10/187 ,  H01F41/14 ,  H01L43/14 ,  H01F10/02

    CPC分类号： C30B29/40 ,  C30B13/00 ,  C30B19/00 ,  H01F10/187 ,  H01F41/14 ,  H01L43/14

    摘要： A method for producing a unique InSb thin film element which comprises the steps of forming a thin film of InSb polycrystal on a substrate of insulating material, forming an oxide film on the InSb thin film, zone-melting the InSb thin film by heating the thin film covered with the oxide film to a temperature above the melting point of InSb in a controlled gaseous heat-treating atmosphere comprising an inert gas containing from 1 ppm to 3 .times. 10.sup.4 ppm of oxygen, which is replaceable by an addition of a tenfold amount of aqueous vapor to the extent of 10.sup.2 ppm of oxygen, and cooling the resultant element. An InSb thin film element produced in this way is suitable as a material for a magnetosensitive element of good performance, especially a low noise level or a high S/N ratio.

    摘要翻译： 一种制造独特的InSb薄膜元件的方法，包括以下步骤：在绝缘材料的衬底上形成InSb多晶薄膜，在InSb薄膜上形成氧化膜，通过加热薄片 在含有1ppm至3×104ppm氧气的惰性气体的受控气体热处理气氛中，氧化膜覆盖的温度高于InSb熔点的温度，该惰性气体可以通过加入十倍量的 水蒸汽至102ppm的氧气，并冷却所得元件。 以这种方式制造的InSb薄膜元件适用于具有良好性能，特别是低噪声水平或高S / N比的磁敏元件的材料。