Abstract:
A field emission device and method of forming a field emission device are provided in accordance with the present invention. The field emission device is comprised of a substrate (12) having a deformation temperature that is less than about six hundred and fifty degrees Celsius and a nano-supported catalyst (22) formed on the substrate (12) that has active catalytic particles that are less than about five hundred nanometers. The field emission device is also comprised of a nanotube (24) that is catalytically formed in situ on the nano-supported catalyst (22), which has a diameter that is less than about twenty nanometers.
Abstract:
Manufacturing equipment and manufacturing process steps that improve upon prior art processes for the manufacturing of filament tube and arc tube light sources, their components and subassemblies, and lamps employing said light sources. A double ended, tipless filament tube or arc tube light source incorporates a drawn-down tubular body, and one piece foliated leads with spurs for process handling and for spudding into a filament with stretched-out legs. Bugled ends on the body provide a novel cutoff means, facilitate a flush-fill finishing process, and enhance mounting and support of the light sources in lamps. The foliated leads are made from a continuous length of wire in a process including foil hammering and two-bath AC electrochemical etching. Cost-reduced light source and lamp production enables affordable household consumer lamps, even when containing two series-connected halogen filament tubes. Safety benefits ensue from series connection, especially in combination with disclosed body and filament constructions.
Abstract:
Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
Abstract:
A coiled filament has a light emitter with a reduced volume as best possible to serve in downsizing a light bulb and elevate an illumination with high efficiency in an illuminated field. A flat coiled filament (1) wound into flatness is arranged in the form of a helix or ring, locating the longer axis (FL) of the flatness in parallel with the central axis (CL) of the coiled filament or to cross the central axis (CL) at an appropriate angle (α) including right angle. Alternatively, it is arranged in coincident with the radial axis (HL) of the coiled filament or at an appropriate angle (α) including the radial axis (HL). Alternatively, the flat coiled filament is U-shaped and a pair of such U-shaped flat coiled filaments (4) are mated with each other through their open ends, while the inner surfaces of their closed ends are kept non-contact with each other. Alternatively, the flat coiled filament (1) is formed circular, and within a circle of such a circular ring-shaped double coiled filament (5, 10, 12), an appropriate number of straight or circular flat coiled filaments (6, 7, 9, 11, 13, 14) are arranged in the central axis (CL) of the circle.
Abstract:
An electron-emissive film (170, 730) is made from graphite and has a surface defining a plurality of emissive clusters (100), which are uniformly distributed over the surface. Each of the emissive clusters (100) has dendrites (110) extending radially from a central point (120). Each of the dendrites (110) has a ridge (130), which has a radius of curvature of less than 10 nm. The graphene sheets (160) that form the dendrites (110) have a (002) lattice spacing within a range of 0.342-0.350 nanometers.
Abstract:
A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.
Abstract:
In a multi-emitter electron gun of a field-emission type constructed by the integrated circuit technique, each emitter comprising an emission electrode having an emissive point, an extracting gate electrode, and a focusing electrode, the focusing electrode in a peripheral zone of the multi-emitter electron gun is brought to a lower electric potential as compared with that in a central zone so that the emitter in the peripheral zone has a beam convergence higher than that of the emitter in the central zone. Instead, the focusing electrode in the peripheral zone has a greater thickness as compared with that in the central zone. Alternatively, the focusing electrode in the peripheral zone has a smaller aperture as compared with that in the central zone. Alternatively, the interval between the extracting gate electrode and the focusing electrode is wider in the emitter in the central zone as compared with that in the peripheral zone. Alternatively, the emitter in the peripheral zone alone comprises the focusing electrode of two layers with an upper-layer focusing electrode kept at an electric potential lower than that of a lower-layer focusing electrode. Alternatively, the emitter in the central zone alone further comprises an electrode located between the extracting gate electrode and the focusing electrode and brought to an electric potential substantially equal to that of the extracting gate electrode.
Abstract:
A field emission cathode for use in flat panel displays is disclosed comprising a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also disclosed along with the use of the cathode to form a fluorescent light source.
Abstract:
Titanium tungsten (Ti:W) and aluminum are used in a sublayering arrangement as the metallization material for the gate electrodes 60, cathode electrodes 20, bond pads 80 and 130, lead interconnects 100, 101, 120 and 121, and integrated circuit (IC) mount pads 90 and 91, on the emitter plate 10 of a field emission display. In a disclosed embodiment, titanium tungsten and aluminum sublayers are combined with niobium to provide the metallization material.
Abstract:
A flat display apparatus has a substrate, a plurality of pointed cathodes formed on the substrate, a planar anode facing toward the cathodes via a vacuum space, and a light emitting layer on the side of the anode which is opposite from the cathodes. The anode has a plurality of projections in positions corresponding to the cathodes. The anode projections reduce electron scatter to improve light emission from the light emitting layer. In another embodiment of the flat display apparatus, a plurality of electron sources are disposed on the substrate and positioned relative to one another in an alternately staggered vertical positional sequence toward a light emitting member so that electrons are successively amplified. In a further embodiment of the flat display apparatus, wherein a plurality of electron sources are disposed on the substrate, an electrode faces toward the electron sources, and a light emitting member is provided on a side of the electrode opposite and facing away from the substrate, the electron sources include a primary electron source for generating primary electrons and a secondary electron source for amplifying primary electrons from the primary electron source due to a malta effect.