公开(公告)号：US09014744B2

公开(公告)日：2015-04-21

申请号：US12927932

申请日：2010-11-30

Applicant: Liwen Chu ,  George A. Vlantis

Inventor： Liwen Chu ,  George A. Vlantis

IPC: H04B7/00 ,  H04W52/02

CPC classification number: H04W52/0238 ,  Y02D70/00 ,  Y02D70/142

Abstract: A method and apparatus for conserving power in a wireless communication device. The method includes receiving at least a portion of a PHY protocol data unit (PPDU) frame, where the PPDU frame includes an aggregate MAC protocol data unit (A-MPDU) field. The method also includes comparing a receiver address (RA) within the A-MPDU field to a stored address of the wireless communication device and, if the received RA does not match the stored address, causing power to be removed from one or more circuits of the wireless communication device for a calculated period of time.

Abstract translation: 一种用于在无线通信设备中节省功率的方法和装置。 该方法包括接收PHY协议数据单元（PPDU）帧的至少一部分，其中PPDU帧包括聚合MAC协议数据单元（A-MPDU）字段。 该方法还包括将A-MPDU字段内的接收器地址（RA）与无线通信设备的存储地址进行比较，并且如果接收到的RA与存储的地址不匹配，则导致从一个或多个电路 所述无线通信设备在计算的时间段内。

公开(公告)号：US09014105B2

公开(公告)日：2015-04-21

申请号：US12956305

申请日：2010-11-30

Applicant: Liwen Chu ,  George A. Vlantis

Inventor： Liwen Chu ,  George A. Vlantis

IPC: H04W4/00 ,  H04W74/08 ,  H04W84/12 ,  H04W28/06 ,  H04L27/00 ,  H04W72/02

CPC classification number: H04W74/0816 ,  H04L27/0006 ,  H04W28/06 ,  H04W72/02 ,  H04W84/12

Abstract: A method and apparatus for negotiating an idle subchannel set for a wireless data transmission. The method includes transmitting an indication of a first set of idle subchannels to a wireless station. The method also includes receiving an indication of a second set of idle subchannels from the wireless station. The method further includes determining a final set of idle subchannels based on the indication of the first set of idle subchannels and the indication of the second set of idle subchannels.

Abstract translation: 一种用于协商用于无线数据传输的空闲子信道集合的方法和装置。 该方法包括向无线站发送第一组空闲子信道的指示。 该方法还包括从无线站接收第二组空闲子信道的指示。 该方法还包括基于第一组空闲子信道的指示和第二组空闲子信道的指示来确定最后一组空闲子信道。

公开(公告)号：US09006816B2

公开(公告)日：2015-04-14

申请号：US13852645

申请日：2013-03-28

Applicant: STMicroelectronics, Inc. ,  International Business Machines Corporation

Inventor： Prasanna Khare ,  Stephane Allegret-Maret ,  Nicolas Loubet ,  Qing Liu ,  Hemanth Jagannathan ,  Lisa Edge ,  Kangguo Cheng ,  Bruce Doris

IPC: H01L29/792 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L27/115

CPC classification number: H01L29/792 ,  H01L21/28273 ,  H01L27/11546 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

Abstract: A memory device may include a semiconductor substrate, and a memory transistor in the semiconductor substrate. The memory transistor may include source and drain regions in the semiconductor substrate and a channel region therebetween, and a gate stack. The gate stack may include a first dielectric layer over the channel region, a first diffusion barrier layer over the first dielectric layer, a first electrically conductive layer over the first diffusion barrier layer, a second dielectric layer over the first electrically conductive layer, a second diffusion barrier layer over the second dielectric layer, and a second electrically conductive layer over the second diffusion barrier layer. The first and second dielectric layers may include different dielectric materials, and the first diffusion barrier layer may be thinner than the second diffusion barrier layer.

Abstract translation: 存储器件可以包括半导体衬底和半导体衬底中的存储晶体管。 存储晶体管可以包括半导体衬底中的源极和漏极区域以及它们之间的沟道区域和栅极堆叠。 栅极堆叠可以包括沟道区域上的第一介电层，第一介电层上的第一扩散阻挡层，第一扩散阻挡层上的第一导电层，第一导电层上的第二介电层，第二介电层 第二介电层上的扩散阻挡层，以及位于第二扩散阻挡层上的第二导电层。 第一和第二电介质层可以包括不同的电介质材料，并且第一扩散阻挡层可以比第二扩散阻挡层薄。

公开(公告)号：US20150087205A1

公开(公告)日：2015-03-26

申请号：US14035281

申请日：2013-09-24

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang

IPC: B24B37/005

CPC classification number: B24B37/005 ,  B24B27/0076 ,  B24B49/04

Abstract: An adaptive uniform polishing system is equipped with feedback control to apply localized adjustments during a polishing operation. The adaptive uniform polishing system disclosed has particular application to the semiconductor industry. Such an adaptive uniform polishing system includes a rotatable head that holds a semiconductor wafer, and a processing unit structured to be placed in contact with an exposed surface of the wafer. The processing unit includes a rotatable macro-pad and a plurality of rotatable micro-pads that can polish different portions of the exposed surface at different rotation speeds and pressures. Thus, uniformity across the exposed surface can be enhanced by applying customized treatments to different areas. Customized treatments can include the use of different pad materials and geometries. Parameters of the adaptive uniform polishing system are programmable, based on in-situ data or data from other operations in a fabrication process, using advanced process control.

Abstract translation: 自适应均匀抛光系统配备有反馈控制，以在抛光操作期间应用局部调整。 所公开的自适应均匀抛光系统特别适用于半导体工业。 这种自适应均匀抛光系统包括保持半导体晶片的可旋转头部和被构造成与晶片的暴露表面接触的处理单元。 处理单元包括可旋转的宏观垫和多个可旋转的微垫，其可以以不同的转速和压力抛光暴露表面的不同部分。 因此，通过将定制的处理应用于不同的区域，可以增强暴露表面的均匀性。 定制处理可以包括使用不同的垫材料和几何形状。 自适应均匀抛光系统的参数是可编程的，基于在制造过程中的其他操作的原位数据或数据，使用先进的过程控制。

公开(公告)号：US08987780B2

公开(公告)日：2015-03-24

申请号：US13907752

申请日：2013-05-31

Applicant: STMicroelctronics, Inc.

Inventor： John H Zhang ,  Cindy Goldberg ,  Walter Kleemeier

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66431 ,  B82Y10/00 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787

Abstract: A graphene capped HEMT device and a method of fabricating same are disclosed. The graphene capped HEMT device includes one or more graphene caps that enhance device performance and/or reliability of an exemplary AlGaN/GaN heterostructure transistor used in high-frequency, high-energy applications, e.g., wireless telecommunications. The HEMT device disclosed makes use of the extraordinary material properties of graphene. One of the graphene caps acts as a heat sink underneath the transistor, while the other graphene cap stabilizes the source, drain, and gate regions of the transistor to prevent cracking during high-power operation. A process flow is disclosed for replacing a three-layer film stack, previously used to prevent cracking, with a one-atom thick layer of graphene, without otherwise degrading device performance. In addition, the HEMT device disclosed includes a hexagonal boron nitride adhesion layer to facilitate deposition of the compound nitride semiconductors onto the graphene.

Abstract translation: 公开了石墨烯封盖HEMT器件及其制造方法。 石墨烯封盖的HEMT器件包括一个或多个石墨烯帽，其增强用于高频，高能量应用（例如无线电信）中的示例性AlGaN / GaN异质结构晶体管的器件性能和/或可靠性。 所公开的HEMT装置利用石墨烯的非凡材料特性。 其中一个石墨烯帽作为晶体管下面的散热器，而另一个石墨烯帽稳定晶体管的源极，漏极和栅极区域，以防止在大功率操作期间的开裂。 公开了一种工艺流程，用于用原子厚的石墨烯层替代先前用于防止裂纹的三层膜堆，而不会使装置性能降低。 此外，所公开的HEMT器件包括六边形氮化硼粘附层，以便于将复合氮化物半导体沉积到石墨烯上。

公开(公告)号：US20150076675A1

公开(公告)日：2015-03-19

申请号：US14027975

申请日：2013-09-16

Applicant: STMicroelectronics, Inc.

Inventor： Rogelio Real ,  William Cabreros

IPC: H01L23/00

CPC classification number: H01L21/561 ,  H01L21/4832 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Embodiments of the present disclosure are directed to leadframe packages with wettable sides and methods of manufacturing same. In one embodiment, the leads of the leadframe packages have recesses with a curved profile formed therein. The recesses are plated with a solder wettable layer of conductive material that enables solder to flow along the surface during surface mounting of the package to a board, such as a PCB.

Abstract translation: 本公开的实施例涉及具有可湿侧的引线框封装及其制造方法。 在一个实施例中，引线框封装的引线具有形成在其中的弯曲轮廓的凹部。 这些凹槽镀有导电材料的焊料可润湿层，其使得焊料能够在将封装表面安装到诸如PCB的板的过程中沿表面流动。

公开(公告)号：US08966120B2

公开(公告)日：2015-02-24

申请号：US10955948

申请日：2004-09-30

Applicant: Liwen Chu ,  Mario Valerio Filauro

Inventor： Liwen Chu ,  Mario Valerio Filauro

IPC: G06F15/173 ,  H04W74/08

CPC classification number: H04W74/0825

Abstract: A method for providing a priority-based, low-collision distributed coordination function in a wireless network that includes a plurality of stations is provided. The method includes determining a priority for a first station and selecting a back-off time for the first station based on the priority.

Abstract translation: 提供了一种在包括多个站的无线网络中提供基于优先级的低冲突分布式协调功能的方法。 该方法包括确定第一站的优先级，并且基于优先级来选择第一站的退避时间。

公开(公告)号：US08956325B2

公开(公告)日：2015-02-17

申请号：US13313443

申请日：2011-12-07

Applicant: Michele Palmieri

Inventor： Michele Palmieri

IPC: A61M1/00 ,  F04B17/00 ,  A61M5/142

CPC classification number: A61M5/142 ,  A61M5/14224 ,  A61M35/00 ,  A61M2205/0244 ,  A61M2205/0294 ,  F04B43/046

Abstract: Disclosed herein is a microfluidic pumping device having a piezoelectric member positioned above a displaceable membrane. A voltage is applied across the piezoelectric member causing the piezoelectric member to displace the membrane. Displacement of the membrane increases and decreases pressure in a cavity that is below the membrane. The increases and decreases in pressure actuate cantilevered check valve members to facilitate unidirectional liquid flow through the pumping device.

Abstract translation: 本文公开了一种微流体泵送装置，其具有位于可置换膜上方的压电元件。 在压电元件两端施加电压，使压电元件移动膜。 膜的位移增加并减小在膜下面的空腔中的压力。 压力的增加和减小致动悬臂止回阀构件以促进单向液体流过泵送装置。

公开(公告)号：US08952420B1

公开(公告)日：2015-02-10

申请号：US13953551

申请日：2013-07-29

Applicant: STMicroelectronics, Inc.

Inventor： Nicolas Loubet ,  Pierre Morin

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

Abstract translation: 描述形成应变通道鳍状FET的方法和结构。 用于finFET的鳍结构可以形成在生长在块状衬底上的两个外延层中。 可以将第一薄外延层切割并用于通过弹性弛豫向finFET的相邻沟道区施加应变。 该结构表现出优选的设计范围，用于增加应变在翅片高度上的诱导应变和均匀性。

公开(公告)号：US08935515B2

公开(公告)日：2015-01-13

申请号：US12544250

申请日：2009-08-20

Applicant: Osvaldo M. Colavin ,  Davide Rizzo ,  Vineet Soni ,  William L. Schubert, Jr.

Inventor： Osvaldo M. Colavin ,  Davide Rizzo ,  Vineet Soni ,  William L. Schubert, Jr.

IPC: G06F9/30 ,  G06F9/45 ,  G06F9/345 ,  G06F9/38

CPC classification number: G06F8/45 ,  G06F9/30036 ,  G06F9/30065 ,  G06F9/3013 ,  G06F9/30134 ,  G06F9/30189 ,  G06F9/345 ,  G06F9/381 ,  G06F9/3824 ,  G06F9/3836 ,  G06F9/384 ,  G06F9/3867

Abstract: A processor that can execute instructions in either scalar mode or vector mode. In scalar mode, instructions are executed once per fetch. In vector mode, instructions are executed multiple times per fetch. In vector mode, the processor recognizes scalar variables and vector variables. Scalar variables may be assigned a fixed memory location. Vector variables use different physical locations at different iterations of the same instruction. The processor includes circuitry to automatically index addresses of vector variables for each iteration of the same instruction. This circuitry partitions a register into a vector region and a scalar region. Accesses to the vector region are automatically indexed based on the number of iterations of the instruction that have been performed.