公开(公告)号：US09431724B2

公开(公告)日：2016-08-30

申请号：US14699037

申请日：2015-04-29

Applicant: ABB TECHNOLOGY AG

Inventor： Philippe France ,  Romain Villard

IPC: H01R4/26 ,  H01R4/48 ,  H01R24/20 ,  H01R13/11

CPC classification number: H01R4/4818 ,  H01R4/4827 ,  H01R13/11 ,  H01R24/20

Abstract: The present invention relates to a detachable connector (1) for a junction block comprising: an insulating body (2), a connection terminal (10) having a housing (8) for an electrically conductive wire (C) intended to be inserted through a first opening (3) of the insulating body (2) along an insertion direction (D) of the electrically conductive wire (C) in the insulating body (2), a connection plug (20) comprising a socket (21) from which extend two elastic connection branches (22a, 22b) intended to ensure an electrical contact with a complementary plug of the junction block intended to pass through a second opening (4) of the insulating body (2), the detachable connector (1) being characterized in that it comprises a passageway (6) for the electrically conductive wire (C) connecting the first housing (8) of the connection terminal (10) and a second housing (9) formed in the socket (21) of the connection plug (20).

Abstract translation: 本发明涉及一种用于接合块的可拆卸连接器（1），包括：绝缘体（2），具有用于导电线（C）的壳体（8）的连接端子（10），其用于插入通过 绝缘体（2）中的导电线（C）的插入方向（D）的绝缘体（2）的第一开口（3），包括插座（21）的连接插头（20） 两个弹性连接分支（22a，22b）旨在确保与待连接的绝缘体（2）的第二开口（4）的接合块的互补插塞电接触，该可拆卸连接器（1）的特征在于 其包括用于连接连接端子（10）的第一壳体（8）的导电线（C）和形成在连接插头（20）的插座（21）中的第二壳体（9）的通道（6） ）。

公开(公告)号：US09431376B2

公开(公告)日：2016-08-30

申请号：US14539422

申请日：2014-11-12

Applicant: ABB TECHNOLOGY AG

Inventor： Samuel Hartmann ,  Dominik Trüssel

IPC: H01L23/00 ,  H01L25/07

CPC classification number: H01L25/072 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/48101 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Exemplary embodiments provide a substrate for mounting multiple power transistors. The substrate has a first metallization on which the power transistors are mountable with an associated collector or emitter, and which extends in at least one line on the substrate. A second metallization extends in an area next to the at least one line of the first metallization, for connection to the remaining ones of the emitters or collectors of the power transistors. A third metallization allows connection to gate contact pads of the power transistors. The third metallization includes a gate contact and at least two gate metallization areas, which are interconnectable. The gate metallization areas are arranged in parallel to the at least one line and spaced apart in a longitudinal direction of the at least one line. At least one gate metallization area is provided as a gate island surrounded on the substrate by the second metallization.

Abstract translation: 示例性实施例提供用于安装多个功率晶体管的衬底。 衬底具有第一金属化，其上功率晶体管可由相关联的集电极或发射极安装在其上，并且在衬底上的至少一条线上延伸。 第二金属化在与第一金属化的至少一条线相邻的区域中延伸，用于连接到功率晶体管的其余发射极或集电极。 第三金属化允许连接到功率晶体管的栅极接触焊盘。 第三金属化包括栅极接触和可互连的至少两个栅极金属化区域。 栅极金属化区域布置成平行于至少一条线并且在至少一条线的纵向方向上间隔开。 提供至少一个栅极金属化区域作为通过第二金属化在基板上包围的栅极岛。

公开(公告)号：US09427871B2

公开(公告)日：2016-08-30

申请号：US14265701

申请日：2014-04-30

Applicant: ABB Technology AG

Inventor： Gary Ciarelli ,  Srinivas Nidamarthi

IPC: G06F19/00 ,  B25J9/16 ,  F16P3/14

CPC classification number: B25J9/1676 ,  F16P3/14 ,  G05B2219/40203 ,  G05B2219/40298 ,  G05B2219/40475 ,  G05B2219/45067 ,  G05B2219/49141 ,  G05B2219/49152 ,  Y10S901/01 ,  Y10S901/46

Abstract: A computer-implemented system and method for operating mobile automated workstations in a workspace including a workpiece is disclosed. A computer device defines an exclusionary volume having an outer exclusionary surface at least partially surrounding a mobile workstation that is operably disposed in the workspace. The computer device receives data from at least one sensor and determines the location of the workstation and humans within the workspace based on the data. The computer device activates an indicator and alters the motion of the workstation after detection of a human breaching the exclusionary volume or exclusionary surface.

Abstract translation: 公开了一种用于在包括工件的工作空间中操作移动自动化工作站的计算机实现的系统和方法。 计算机设备定义排除体积，其具有至少部分围绕可操作地设置在工作空间中的移动工作站的外部排除表面。 计算机设备从至少一个传感器接收数据，并且基于该数据确定工作站内的工作站和人员的位置。 在检测到人违反排斥体积或排除表面之后，计算机设备激活指示器并改变工作站的运动。

公开(公告)号：US09425609B2

公开(公告)日：2016-08-23

申请号：US13648813

申请日：2012-10-10

Applicant: ABB Technology AG

Inventor： Ari Wahlroos ,  Janne Altonen

IPC: H02H3/28 ,  G01R31/08 ,  G01R31/327 ,  H02H3/38 ,  H02H7/045

CPC classification number: H02H3/286 ,  G01R31/086 ,  G01R31/3275 ,  H02H3/385 ,  H02H7/045

Abstract: A method and apparatus are provided for differential protection of a three phase electric connection of an electric system. The apparatus includes means for determining a value of an operate quantity, which operate quantity is based on a difference between current quantities at a first point and a second point of the electric connection, and means for detecting a fault in the electric connection between the first point and the second point if the value of the operate quantity exceeds a value of a predetermined threshold quantity. The operate quantity is based on a difference of residual currents at the first point and the second point, or a quantity indicative thereof, and a coefficient indicative of an angle between a residual voltage of the electric connection and the difference of residual currents at the first point and the second point.

Abstract translation: 提供了用于电气系统的三相电连接的差动保护的方法和装置。 该装置包括用于确定操作量的值的装置，其操作量基于电连接的第一点和第二点处的电流量之差，以及用于检测第一和第二点之间的电连接中的故障的装置 点和第二点，如果操作量的值超过预定阈值的值。 操作量基于第一点和第二点处的残余电流的差异，或者指示其的量，以及表示电连接的残余电压与第一点和第二点的剩余电流的差之间的角度的系数 点和第二点。

公开(公告)号：US20160225486A1

公开(公告)日：2016-08-04

申请号：US15092405

申请日：2016-04-06

Applicant: ABB Technology AG

Inventor： Anna Di-Gianni ,  Bernhard vonAllmen ,  Denis Tehlar ,  Navid Mahdizadeh ,  Thomas Alfred Paul

IPC: H01B3/56 ,  H02B1/48 ,  H02B1/28

Abstract: The present invention relates to an apparatus for the generation, the distribution and/or the usage of electrical energy. The apparatus comprises a housing enclosing an insulating space and an electrically conductive part arranged in the insulating space, said insulating space containing a dielectric insulation medium, at least a portion of which being in the form of an insulation gas comprising an organofluorine compound. According to the invention, at least some of the components of the apparatus that are directly exposed to the insulation gas are made of a material which remains unaltered during exposure to the insulation gas for a period of more than 1 year at operational conditions and/or have a surface, at least a portion of which is devoid of any nucleophilic group reactive towards the organofluorine compound and/or reactive towards any degradation product thereof at operational conditions.

Abstract translation: 本发明涉及一种用于产生，分配和/或使用电能的装置。 所述装置包括封闭绝缘空间的壳体和布置在所述绝缘空间中的导电部分，所述绝缘空间包含介电绝缘介质，所述绝缘介质的至少一部分为包含有机氟化合物的绝缘气体的形式。 根据本发明，直接暴露于绝缘气体的设备的至少一些部件由在操作条件下和暴露于绝缘气体期间保持不变更长时间超过1年的材料制成，和/或 具有表面，其至少一部分在操作条件下没有对有机氟化合物具有反应性的任何亲核基团和/或对其任何降解产物具有反应性。

公开(公告)号：US20160218615A1

公开(公告)日：2016-07-28

申请号：US15088812

申请日：2016-04-01

Applicant: ABB Technology AG

Inventor： Osman Senturk ,  Peter Steimer

IPC: H02M1/34 ,  H01L29/74 ,  H01L29/739 ,  H01L29/749 ,  H01L23/495 ,  H01L23/50

CPC classification number: H02M1/34 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49589 ,  H01L23/50 ,  H01L25/074 ,  H01L25/117 ,  H01L25/16 ,  H01L29/7393 ,  H01L29/7416 ,  H01L29/749 ,  H01L2924/0002 ,  H02M7/003 ,  H02M2007/4835 ,  H01L2924/00

Abstract: A semiconductor stack for a converter comprises two series-connected semiconductor switches; two terminals for connecting a cell capacitor, which are connected to one another by the two semiconductor switches; at least one cooling element arranged between the semiconductor switches; a frame, by which the semiconductor switches and the cooling element are fixed to one another and which provides the terminals; and at least two snubber capacitors which are mechanically fixed to the frame and which are connected in parallel, are connected to the terminals and which in each case form a commutation loop with the semiconductor switches.

Abstract translation: 用于转换器的半导体堆叠器包括两个串联连接的半导体开关; 用于连接通过两个半导体开关彼此连接的单元电容器的两个端子; 布置在所述半导体开关之间的至少一个冷却元件; 半导体开关和冷却元件彼此固定并提供端子的框架; 并且至少两个机械地固定到框架并且并联连接的缓冲电容器连接到端子，并且在每种情况下都与半导体开关形成换向环路。

公开(公告)号：US20160217950A1

公开(公告)日：2016-07-28

申请号：US15003131

申请日：2016-01-21

Applicant: ABB Technology AG

Inventor： Nicola Bresciani ,  Pierantonio Arrighetti

IPC: H01H33/10 ,  H01H33/42 ,  H01H33/74

CPC classification number: H01H33/10 ,  H01H1/226 ,  H01H9/342 ,  H01H9/346 ,  H01H33/42 ,  H01H33/74 ,  H01H2009/348 ,  H01H2205/002

Abstract: A low voltage switch pole which comprises an insulating casing having lateral walls and a front and a rear wall and defining an internal space with a contact area and an arc extinguishing area, a fixed contact assembly and a movable contact assembly being positioned in said contact area, said movable contact assembly being movable between a closed position in which it is into contact with said fixed contact assembly and an open position in which it is spaced apart from said fixed contact assembly, an arc chamber comprising a plurality of substantially parallel metallic plates inserted into an enclosure made of insulating material being positioned in said arc extinguishing area; the switch pole further comprises an insulating wall which is positioned in said internal space between said contact area and said arc extinguishing area and partially separates said contact area from said arc extinguishing area, a channel connecting said contact area to said arc extinguishing area being provided in said insulating wall.

Abstract translation: 一种低压开关极，其包括具有侧壁的绝缘壳体和前壁和后壁，并且限定具有接触区域和灭弧区域的内部空间，固定触头组件和可动触头组件定位在所述接触区域中 所述可动接触组件可在其与所述固定接触组件接触的关闭位置和与所述固定接触组件间隔开的打开位置之间移动，电弧室包括多个基本上平行的金属板，所述金属板插入 进入由绝缘材料制成的外壳，其位于所述灭弧区域中; 所述开关极还包括绝缘壁，所述绝缘壁位于所述接触区域和所述灭弧区域之间的所述内部空间中，并且部分地将所述接触区域与所述灭弧区域分开，将所述接触区域与所述灭弧区域连接的通道设置在 说绝缘墙。

公开(公告)号：USD762244S1

公开(公告)日：2016-07-26

申请号：US29512423

申请日：2014-12-18

Applicant: ABB Technology AG

Designer： Biju Puthalath Thazha Kuniyl

公开(公告)号：USD761740S1

公开(公告)日：2016-07-19

申请号：US29532072

申请日：2015-07-01

Applicant: ABB Technology AG

Designer： Timothy F. Masters ,  Armando Varela

公开(公告)号：US20160204240A1

公开(公告)日：2016-07-14

申请号：US15075766

申请日：2016-03-21

Applicant: ABB Technology AG

Inventor： Friedhelm Bauer

IPC: H01L29/745 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/7455 ,  H01L29/0649 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/0847 ,  H01L29/1012 ,  H01L29/1095 ,  H01L29/41716 ,  H01L29/749

Abstract: A power semiconductor device is provided comprising: a collector electrode, a collector layer of a second conductivity type, a drift layer of a first conductivity type, a base layer of the second conductivity type, a first insulating layer having an opening, an emitter layer of the first conductivity type, the emitter layer contacts the base layer and separated from the drift layer by one of the first insulating layer or the base layer, a body layer of the second conductivity type arranged laterally to the emitter layer and separated from the base layer by the first insulating layer and the emitter layer, a source region of the first conductivity type separated from the emitter layer by the body layer, an emitter electrode contacted by the source region. The device further comprises a first layer of the second conductivity type contacting the emitter electrode and separated from the base layer, and a second layer of the first conductivity type arranged between the first layer and the base layer and separated from the emitter layer and the source region. A planar MIS gate electrode is arranged laterally from the emitter electrode, a corresponding MIS channel being formable between the source region, the body layer and the emitter layer. A thyristor current path extends between the emitter layer, the base layer and the drift layer through the opening, and a turn-off MIS channel is formable below the planar MIS gate electrode from the first layer, the second layer, the base layer to the drift layer.

Abstract translation: 提供了一种功率半导体器件，包括：集电极电极，第二导电类型的集电极层，第一导电类型的漂移层，第二导电类型的基极层，具有开口的第一绝缘层，发射极层 所述第一导电类型的发射极层与所述基极层接触并且通过所述第一绝缘层或所述基底层之一与所述漂移层分离，所述第二导电类型的主体层横向排列到所述发射极层并与所述基极分离 通过第一绝缘层和发射极层，由主体层与发射极层分离的第一导电类型的源极区域，与源极区域接触的发射极。 该器件还包括第二导电类型的第一层与第二导电类型接触，并与基极层分离，并且第一导电类型的第二层布置在第一层与基极层之间，并与发射极层和源极 地区。 平面MIS栅极电极从发射极侧向设置，相应的MIS沟道可在源极区域，主体层和发射极层之间形成。 晶闸管电流路径通过开口在发射极层，基极层和漂移层之间延伸，并且在第一层，第二层，基底层到第二层 漂移层。