Abstract:
An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent electrically conducting layer from the electrically conductive layer and the second section.
Abstract:
An input/output device used for connecting at least one external wire with a display apparatus, comprises a case, at least one I/O connector, a flip cover, and a lighting device. The case embedded in the case of the display apparatus has a wiring slot to provide the wire passing through the case. The I/O connectors embedded on the case are electrically connected to the display apparatus. The flip cover is pivoted on the case. The lighting device having a light source and a switch is associated with the flip cover to turn on or turn off the light source.
Abstract:
A touch-sensitive display device includes a liquid crystal display module and a touch-sensitive element. The touch-sensitive element is attached to a surface of the liquid crystal display module.
Abstract:
A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure.
Abstract:
A “code optimizer” provides various techniques for optimizing arbitrary XOR-based codes for encoding and/or decoding of data. Further, the optimization techniques enabled by the code optimizer do not depend on any underlining code structure. Therefore, the optimization techniques provided by the code optimizer are applicable to arbitrary codes with arbitrary redundancy. As such, the optimized XOR-based codes generated by the code optimizer are more flexible than specially designed codes, and allow for any desired level of fault tolerance. Typical uses of XOR-based codes include, for example, encoding and/or decoding data using redundant data packets for data transmission real-time communications systems, encoding and/or decoding operations for storage systems such as RAID arrays, etc.
Abstract:
A method and system that enhances a user's performance while interacting with an interactive internet application such as a Massively Multiplayer Online (MMO) game is provided. The network latency experienced by users participating in the MMO game is minimized by dynamically determining an optimal transmission action for a message generated by the MMO game. In one embodiment, determining the optimal transmission action for a message includes dynamically determining the optimal number of redundant Forward Error Correction (FEC) packets to add to a message prior to transmitting a message to a receiving device. The optimal number of FEC packets is determined based on a wide range of varying network conditions.
Abstract:
A support mechanism includes a pivoting assembly and a support member. The pivoting assembly includes a fixing member, a sliding member slidably mounted on the fixing member, a pivoting shaft rotatably connected to one end of the fixing member, and at least one torsion spring sleeved on and coiling around the pivot shaft. The torsion spring includes two assembling legs, one assembling leg of the torsion spring elastically resists against the fixing member. The support member is fixed to the sliding member.
Abstract:
A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.
Abstract:
A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a semiconductor device and a contact etch stop layer (CESL) and a dielectric layer covering the semiconductor device formed thereon, wherein the semiconductor device having at least a dummy gate, performing a dummy gate removal step to form at least an opening in the semiconductor device and to simultaneously remove a portion of the CESL such that a top surface of the CESL is lower than the semiconductor device and the dielectric layer and a plurality of recesses is obtained, and performing a recess elimination step to form a substantially even surface of the dielectric layer.
Abstract:
A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.