公开(公告)号：US20120164773A1

公开(公告)日：2012-06-28

申请号：US13216260

申请日：2011-08-24

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  TZU-CHIEN HUNG ,  YA-WEN LIN

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  TZU-CHIEN HUNG ,  YA-WEN LIN

IPC分类号： H01L33/06

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/12

摘要： A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure.

摘要翻译： 一种制造半导体照明芯片的方法包括以下步骤：提供衬底; 在所述基板上形成第一蚀刻层; 在所述第一蚀刻层上形成连接层; 在连接层上形成第二蚀刻层; 在所述第二蚀刻层上形成照明结构; 并且蚀刻第一蚀刻层，连接层，第二蚀刻层和照明结构，其中第一蚀刻层和第二蚀刻层的蚀刻速率比连接层和照明结构的蚀刻速率大，从而形成 连接层和照明结构均具有倒立的截头锥形结构。

公开(公告)号：US20140027806A1

公开(公告)日：2014-01-30

申请号：US14037386

申请日：2013-09-26

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  PENG-YI WU ,  WEN-YU LIN ,  CHIH-PANG MA ,  TZU-CHIEN HUNG ,  CHIA-HUI SHEN

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  PENG-YI WU ,  WEN-YU LIN ,  CHIH-PANG MA ,  TZU-CHIEN HUNG ,  CHIA-HUI SHEN

IPC分类号： H01L33/36

CPC分类号： H01L33/36 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.

摘要翻译： 具有提高光提取效率的半导体光电子结构包括基片; 在基板上形成缓冲层，并具有与基板相邻形成有多个槽的图案， 在缓冲层上形成半导体层，在缓冲层上形成n型导体层，在n型导电层上形成有源层，在活性层上形成p型导电层。 在半导体层上形成透明导电层; 在透明导电层上形成p型电极; 在n型导电层上形成n型电极。

公开(公告)号：US20120175630A1

公开(公告)日：2012-07-12

申请号：US13300731

申请日：2011-11-21

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN

IPC分类号： H01L33/02 ,  H01L33/48

CPC分类号： H01L33/52 ,  H01L24/24 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/181 ,  H01L2924/00012

摘要： An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent electrically conducting layer from the electrically conductive layer and the second section.

摘要翻译： LED包括电极层，电极层包括彼此电绝缘的第一部分和第二部分; 所述第二部分上的导电层，从所述导电层突出的导电极; 包括在所述导电层上的电绝缘衬底的LED管芯和所述电绝缘衬底上的PN结，所述PN结包括第一电极和第二电极，所述导电极延伸穿过所述电绝缘衬底以电连接 第一电极到第二部分; 在所述LED管芯上的透明导电层，所述透明导电层将所述第二电极与所述第一部分电连接; 以及在LED管芯，导电层和透明导电层之间的电绝缘层，其中电绝缘层使透明导电层与导电层和第二部分绝缘。

公开(公告)号：US20130234150A1

公开(公告)日：2013-09-12

申请号：US13600137

申请日：2012-08-30

申请人： CHIA-HUNG HUANG ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  YA-WEN LIN ,  SHUN-KUEI YANG

发明人： CHIA-HUNG HUANG ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  YA-WEN LIN ,  SHUN-KUEI YANG

IPC分类号： H01L33/22 ,  H01L33/58

CPC分类号： H01L33/58 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32

摘要： A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.

摘要翻译： 发光二极管包括衬底，衬底上的过渡层和过渡层上的外延层。 过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。 球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。 在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

公开(公告)号：US20130001508A1

公开(公告)日：2013-01-03

申请号：US13400097

申请日：2012-02-19

申请人： YA-WEN LIN ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

发明人： YA-WEN LIN ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

IPC分类号： H01L33/14 ,  H01L33/32

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/38 ,  H01L33/382

摘要： An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

摘要翻译： LED包括衬底，缓冲层，外延层和导电层。 外延层包括第一N型外延层，第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。 第一和第二N型外延层经由图案化的沟槽彼此接触。 因此，LED具有均匀的电流分布和更大的发光面积。 还提供了一种用于LED的制造方法。

公开(公告)号：US20120196391A1

公开(公告)日：2012-08-02

申请号：US13231715

申请日：2011-09-13

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN

IPC分类号： H01L33/20 ,  B82Y40/00

CPC分类号： H01L33/22 ,  B82Y40/00 ,  H01L33/0095 ,  H01L33/18 ,  H01L33/32

摘要： A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer.

摘要翻译： 一种制造半导体照明芯片的方法包括以下步骤：为衬底提供外延层，所述外延层包括位于第一半导体层和第二半导体层之间的第一半导体层，第二半导体层和有源层; 将外延层浸入电解质中以蚀刻外延层的表面并在外延层上形成许多孔; 以及在外延层上形成电极。

公开(公告)号：US20120175628A1

公开(公告)日：2012-07-12

申请号：US13272229

申请日：2011-10-13

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  YA-WEN LIN

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  YA-WEN LIN

IPC分类号： H01L33/32 ,  H01L33/52 ,  H01L33/42

CPC分类号： H01L33/62 ,  H01L24/24 ,  H01L33/385 ,  H01L33/42 ,  H01L33/54 ,  H01L2924/12041 ,  H01L2924/00

摘要： An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer.

摘要翻译： 示例性的LED包括电极层，LED管芯，透明导电层和电绝缘层。 电极层包括第一部分和与第一部分电绝缘的第二部分。 LED管芯设置在电极层的第二部分上并与之电连接。 透明导电层形成在LED芯片上，并将LED管芯电连接到电极层的第一部分。 电绝缘层位于LED管芯和透明导电层之间，以使透明导电层与电极层的第二部分绝缘。

公开(公告)号：US20120153332A1

公开(公告)日：2012-06-21

申请号：US13326337

申请日：2011-12-15

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN

IPC分类号： H01L33/44 ,  H01L33/20

CPC分类号： H01L33/20 ,  H01L33/145 ,  H01L33/42

摘要： An epitaxial structure of a light emitting diode (LED) includes a substrate, an epitaxial layer, and a light capturing microstructure. The substrate has a top surface. The epitaxial layer is grown on the top surface of the substrate and has a P-type semiconductor layer, an active layer, and an N-type semiconductor layer in sequence. The light capturing microstructure is positioned on an upper portion of the epitaxial layer which is distant from the substrate. A manufacturing method of an epitaxial structure of an LED is also disclosed. The light capturing microstructure includes at least a concave and an insulating material filled in the at least a concave.

摘要翻译： 发光二极管（LED）的外延结构包括基板，外延层和光捕获微结构。 衬底具有顶表面。 外延层在衬底的顶表面上生长，并且依次具有P型半导体层，有源层和N型半导体层。 光捕获微结构位于远离衬底的外延层的上部。 还公开了一种LED的外延结构的制造方法。 光捕获微结构至少包括填充在至少一个凹部中的凹陷和绝缘材料。

公开(公告)号：US20120164764A1

公开(公告)日：2012-06-28

申请号：US13216248

申请日：2011-08-24

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

IPC分类号： H01L33/62

CPC分类号： H01L33/24 ,  H01L33/005

摘要： A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.

摘要翻译： 一种制造半导体照明芯片的方法包括以下步骤：向衬底提供将衬底的上表面分成多个外延区域的第一块层; 在所述外延区上形成第一半导体层; 形成部分地覆盖所述第一半导体层的第二块层; 在所述第一半导体层的未覆盖部分上形成照明结构; 去除第一和第二块层，从而在第一半导体层和照明结构的底表面处限定间隙; 并将渗透的蚀刻溶液浸入第一和第二间隙中以蚀刻第一半导体层和照明结构，由此形成具有倒立的截头锥形结构的第一半导体层和照明结构中的每一个。

公开(公告)号：US20120190141A1

公开(公告)日：2012-07-26

申请号：US13434860

申请日：2012-03-30

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  YING-CHAO YEH ,  WEN-YU LIN ,  PENG-YI WU ,  SHIH-HSIUNG CHAN

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  YING-CHAO YEH ,  WEN-YU LIN ,  PENG-YI WU ,  SHIH-HSIUNG CHAN

IPC分类号： H01L33/50

CPC分类号： H01L33/08 ,  H01L33/0079

摘要： A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.

摘要翻译： 一种制造多色发光二极管器件的方法，包括以下步骤：在外延衬底上提供外延衬底和形成多重半导体层，其中所述多重半导体层包括n型半导体层，p型半导体层和 活动层 有源层发射第一波长的光。 此后，在多个半导体层上形成第一波长转换层。 第一波长转换层由半导体制成，并吸收一部分第一波长的光并发射第二波长的光，其中第二波长比第一波长长。