公开(公告)号：US20130320487A1

公开(公告)日：2013-12-05

申请号：US13487540

申请日：2012-06-04

申请人： Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

发明人： Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L29/861 ,  H01L21/761 ,  H01L21/76224 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/872

摘要： A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.

摘要翻译： 半导体器件的半导体本体包括第一导电类型的掺杂层和第二导电类型的一个或多个掺杂区。 一个或多个掺杂区形成在半导体本体的掺杂层和第一表面之间。 沟槽结构从第一和第二相对表面之一延伸到半导体本体中。 沟槽结构布置在彼此电连接的半导体本体的部分之间。 沟槽结构可以被布置用于减轻机械应力，局部地控制电荷载流子迁移率，局部地控制电荷载流子复合速率和/或成形掩埋扩散区。

公开(公告)号：US20130307018A1

公开(公告)日：2013-11-21

申请号：US13475319

申请日：2012-05-18

申请人： Stephan Voss ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Stephan Voss ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L29/06 ,  H01L29/78

CPC分类号： H01L29/157 ,  H01L29/08 ,  H01L29/10 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/861

摘要： A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region. The second semiconductor region includes a second semiconductor material different from the first semiconductor material. The semiconductor device further includes a drift or base zone in the first semiconductor region. The semiconductor device further includes an emitter region in the second semiconductor region. The second semiconductor region includes at least one type of deep-level dopant. A solubility of the at least one type of deep-level dopant is higher in the second semiconductor region than in the first semiconductor region.

摘要翻译： 半导体器件包括包括第一半导体材料的第一半导体区域。 半导体器件还包括邻接第一半导体区域的第二半导体区域。 第二半导体区域包括与第一半导体材料不同的第二半导体材料。 半导体器件还包括第一半导体区域中的漂移或基极区域。 半导体器件还包括在第二半导体区域中的发射极区域。 第二半导体区域包括至少一种类型的深层掺杂剂。 第二半导体区域中的至少一种类型的深层掺杂剂的溶解度高于第一半导体区域中的溶解度。

公开(公告)号：US20130249058A1

公开(公告)日：2013-09-26

申请号：US13613985

申请日：2012-09-13

申请人： Thomas Neidhart ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Alexander Susiti

发明人： Thomas Neidhart ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Alexander Susiti

IPC分类号： H01L29/36 ,  H01L21/265

CPC分类号： H01L29/167 ,  H01L21/265 ,  H01L21/26506 ,  H01L29/0603 ,  H01L29/32 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/861

摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.

摘要翻译： 半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。 在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。 掺杂剂区域沿着沿着从第一侧到第二侧的方向具有至少10微米的长度的区段L延伸。 掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。

公开(公告)号：US20120315747A1

公开(公告)日：2012-12-13

申请号：US13558467

申请日：2012-07-26

申请人： Anton MAUDER ,  Hans-Joachim SCHULZE ,  Frank HILLE ,  Holger SCHULZE ,  Manfred PFAFFENLEHNER ,  Carsten SCHÄFFER ,  Franz-Josef NIEDERNOSTHEIDE

发明人： Anton MAUDER ,  Hans-Joachim SCHULZE ,  Frank HILLE ,  Holger SCHULZE ,  Manfred PFAFFENLEHNER ,  Carsten SCHÄFFER ,  Franz-Josef NIEDERNOSTHEIDE

IPC分类号： H01L21/425

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US20120217539A1

公开(公告)日：2012-08-30

申请号：US13036088

申请日：2011-02-28

申请人： Hans Peter Felsl ,  Thomas Raker ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

发明人： Hans Peter Felsl ,  Thomas Raker ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/739 ,  H01L29/74 ,  H01L29/861

CPC分类号： H01L29/744 ,  H01L29/0607 ,  H01L29/1016 ,  H01L29/8611 ,  H01L29/87

摘要： Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.

摘要翻译： 公开了一种半导体部件，其包括半导体本体，在半导体主体中具有第一导电类型的第一发射极区域，在半导体主体的垂直方向上与第一发射极区域间隔开的第二导电类型的第二发射极区域， 布置在第一发射极区域和第二发射极区域之间的一种导电类型的基极区域以及与基极区域相同导电类型的至少两个较高掺杂区域并且布置在基极区域中。 所述至少两个较高掺杂区域在所述半导体主体的横向方向上彼此间隔开，并且仅通过所述基极区域的一部分彼此分离。

公开(公告)号：US08236676B2

公开(公告)日：2012-08-07

申请号：US11944903

申请日：2007-11-26

申请人： Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

发明人： Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/94 ,  H01L21/22

CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L21/266 ,  H01L21/322 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712

摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.

摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。

公开(公告)号：US08178411B2

公开(公告)日：2012-05-15

申请号：US12550483

申请日：2009-08-31

申请人： Reiner Barthelmess ,  Anton Mauder ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Reiner Barthelmess ,  Anton Mauder ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L21/336 ,  H01L21/425

CPC分类号： H01L29/0834 ,  H01L21/263 ,  H01L21/324 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/861

摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。 该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。 该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体 在照射侧的方向上与第一区域相邻的区域。

公开(公告)号：US20120098097A1

公开(公告)日：2012-04-26

申请号：US12908562

申请日：2010-10-20

申请人： Hans-Peter Felsl ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Thomas Raker

发明人： Hans-Peter Felsl ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Thomas Raker

IPC分类号： H01L27/082 ,  H01L27/06

CPC分类号： H01L29/7395 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

摘要： An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.

摘要翻译： 提供IGBT模块。 所述IGBT模块具有至少第一单独的IGBT，所述第一单独IGBT在关断所述IGBT模块期间具有第一柔性，以及至少第二独立IGBT并联连接至所述至少一个第一IGBT。 所述至少一个第二单独IGBT在关断IGBT模块期间具有与第一柔性不同的第二柔软度。 此外，提供了并联连接的具有两个单独的IGBT的电路和电子功率器件。

公开(公告)号：US08003502B2

公开(公告)日：2011-08-23

申请号：US12416935

申请日：2009-04-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/425

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US07989888B2

公开(公告)日：2011-08-02

申请号：US11468846

申请日：2006-08-31

申请人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/66

CPC分类号： H01L29/7395 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36

摘要： Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.

摘要翻译： 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。