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公开(公告)号：US20070069192A1
公开(公告)日：2007-03-29
申请号：US11605064
申请日：2006-11-28
IPC分类号： H01L29/02
CPC分类号： H01L37/00 , F25B2321/003 , F25B2400/15
摘要： The present invention provides a thermal switching element that has a quite different configuration from that of a conventional technique and can control heat transfer by the application of energy, and a method for manufacturing the thermal switching element. The thermal switching element includes a first electrode, a second electrode, and a transition body arranged between the first electrode and the second electrode. The transition body includes a material that causes an electronic phase transition by application of energy. The thermal conductivity between the first electrode and the second electrode is changed by the application of energy to the transition body.
摘要翻译： 本发明提供一种具有与常规技术相当不同的构造并且可以通过施加能量来控制热传递的热开关元件，以及用于制造热开关元件的方法。 热开关元件包括第一电极，第二电极和布置在第一电极和第二电极之间的过渡体。 过渡体包括通过施加能量引起电子相变的材料。 第一电极和第二电极之间的热导率通过向能量转移体施加能量来改变。
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公开(公告)号：US20060273877A1
公开(公告)日：2006-12-07
申请号：US11417200
申请日：2006-05-04
IPC分类号： H01C10/34
CPC分类号： G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2213/31 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1641 , H01L45/1675 , H01L45/1683
摘要： The present invention provides a variable-resistance element in which deterioration in its capacity for resistance variation is suppressed, even when heat treatment is conducted in a reducing atmosphere, and a non-volatile memory using the same. Specifically, the present invention provides (1) a variable-resistance element provided with a material layer comprising an oxide semiconductor having a perovskite structure represented by the chemical formula RMCoO3 (wherein R is a rare-earth element and M is an alkaline-earth element) and first and second electrodes electrically connecting to the material layer, the resistance of the material layer being variable in accordance with an electric current or voltage applied across the first and second electrodes, and (2) a non-volatile memory comprising a transistor and the variable-resistance element, the transistor and the variable-resistance element being electrically connected.
摘要翻译： 本发明提供一种可变电阻元件，即使在还原气氛中进行热处理也能够抑制其电阻变化能力的劣化，以及使用该可变电阻元件的非易失性存储器。 具体而言，本发明提供（1）具有材料层的可变电阻元件，该材料层包含由化学式RMCoO 3（其中R是稀土元素）表示的具有钙钛矿结构的氧化物半导体 和M是碱土元素）和电连接到材料层的第一和第二电极，材料层的电阻根据施加在第一和第二电极两端的电流或电压而变化，以及（2）a 包括晶体管和可变电阻元件的非易失性存储器，晶体管和可变电阻元件电连接。
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73.发明申请Thermoelectric conversion device, and cooling method and power generating method using the device 有权热电转换装置，以及使用该装置的冷却方法和发电方法公开(公告)号：US20060021646A1
公开(公告)日：2006-02-02
申请号：US11194685
申请日：2005-08-02
摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.
摘要翻译： 本发明提供一种具有高热电转换性能的热电转换装置。 在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。 在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。 由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。
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公开(公告)号：US20050174300A1
公开(公告)日：2005-08-11
申请号：US10960167
申请日：2004-10-07
CPC分类号： G09G3/3644 , G09G2340/0407
摘要： A display device of the present invention switches between two displays, a main panel display and a sub-panel display, by using one driver IC. Liquid crystals having different optimal driver voltages are used in the main panel and the sub-panel, and the optimal driver voltage for the panel in which display is to be performed is output. A driver voltage that is higher or lower than the optimal driver voltage is applied to the display panel where display is not to be performed, and the entire display thereof displays a single color. Display content of the panel on which display is not to be performed cannot be identified.
摘要翻译： 本发明的显示装置通过使用一个驱动器IC来切换两个显示器，主面板显示器和子面板显示器。 在主面板和子面板中使用具有不同最佳驱动器电压的液晶，并且输出要执行显示的面板的最佳驱动器电压。 高于或低于最佳驱动器电压的驱动器电压被施加到不执行显示的显示面板，并且其整个显示器显示单一颜色。 不能识别不显示显示的面板的显示内容。
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公开(公告)号：US20050111147A1
公开(公告)日：2005-05-26
申请号：US11024336
申请日：2004-12-28
申请人： Masayoshi Hiramoto , Hiroshi Sakakima , Hideaki Adachi , Nozomu Matukawa , Kenji Iijima , Mitsuo Satomi
发明人： Masayoshi Hiramoto , Hiroshi Sakakima , Hideaki Adachi , Nozomu Matukawa , Kenji Iijima , Mitsuo Satomi
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T428/1107
摘要： A magnetoresistive element includes a pair of magnetic layers sandwiching an intermediate layer, at least one of the magnetic layers includes an oxide ferrite having a plane orientation with a (100), (110) or (111) plane. The oxide can be formed by sputtering with an oxide target while applying a bias voltage to a substrate including a plane on which the oxide ferrite is to be formed so as to adjust the amount of oxygen supplied to the oxide ferrite from the target. One of the magnetic layers is a pinned magnetic layer, and the pinned magnetic layer includes at least one non-magnetic film and magnetic films sandwiching the non-magnetic film. The magnetic films can be coupled with one another by magnetostatic coupling or antiferromagnetic coupling, generating negative magnetic coupling. Magnetic shifts are reduced by generating negative coupling. This element also has an improved thermal resistance.
摘要翻译： 磁阻元件包括夹着中间层的一对磁性层，至少一个磁性层包括具有（100），（110）或（111）面的平面取向的氧化物铁氧体。 氧化物可以通过用氧化物靶溅射形成，同时向包括要在其上形成氧化物铁氧体的平面的衬底施加偏置电压，以便调节从目标物供给到氧化物铁氧体的氧的量。 磁性层中的一个是钉扎磁性层，并且被钉扎的磁性层包括至少一个非磁性膜和夹住非磁性膜的磁性膜。 磁膜可以通过静磁耦合或反铁磁耦合彼此耦合，产生负磁耦合。 通过产生负耦合来减少磁位移。 该元件还具有改善的耐热性。
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76.发明授权公开(公告)号：US06887717B2
公开(公告)日：2005-05-03
申请号：US10223875
申请日：2002-08-19
CPC分类号： B82Y25/00 , H01F10/3254 , H01L43/12 , Y10T428/26
摘要： A magnetoresistive device including a high-resistivity layer (13), a first magnetic layer (12) and a second magnetic layer (14), the first magnetic layer (12) and the second magnetic layer (14) being arranged so as to sandwich the high-resistivity layer (13), wherein the high-resistivity layer (13) is a barrier for passing tunneling electrons between the first magnetic layer (12) and the second magnetic layer (14), and contains at least one element LONC selected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer (12) and the second magnetic layer (14) contains at least one metal element M selected from Fe, Ni and Co, and an element RCP different from the metal element M; and the element RCP combines with the element LONC more easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.
摘要翻译： 一种磁电阻器件，包括高电阻率层（13），第一磁性层（12）和第二磁性层（14），第一磁性层（12）和第二磁性层（14） 所述高电阻率层（13），其中所述高电阻率层（13）是用于在所述第一磁性层（12）和所述第二磁性层（14）之间穿过隧穿电子的势垒，并且包含至少一个元素L' SUB> ONC 选自氧，氮和碳; 从第一磁性层（12）和第二磁性层（14）中选择的至少一层A包含至少一种选自Fe，Ni和Co的金属元素M和不同的元素R < 从金属元素M; 并且元件R 与元件L ON ON ON以比金属元件M更容易地组合。因此，具有低结电阻的新型磁阻器件和 可以获得高MR。
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77.发明申请Thermoelectric conversion material, thermoelectric conversion element using the material, cooling device and electric apparatus using the element, and electric power generation method and cooling method using the element 有权使用该材料的热电转换材料，热电转换元件，使用该元件的冷却装置和电气装置以及使用元件的发电方法和冷却方法公开(公告)号：US20050081906A1
公开(公告)日：2005-04-21
申请号：US11002588
申请日：2004-12-03
IPC分类号： C04B35/00 , C01G31/00 , C04B35/495 , C04B35/50 , H01L35/14 , H01L35/16 , H01L35/20 , H01L35/22 , H01L35/34 , H02N11/00
CPC分类号： C04B35/495 , C01G31/00 , C01G31/006 , C01P2006/40 , C04B35/6262 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3239 , C04B2235/3272 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/3294 , C04B2235/72 , C04B2235/76 , C04B2235/768 , C04B2235/96 , H01L35/22
摘要： With conventional thermoelectric conversion materials, their thermoelectric conversion performance has been insufficient, and a problem has been to achieve stable performance in an oxidizing atmosphere and an air atmosphere. In view of this, according to the present invention, a thermoelectric material is made of a complex oxide that has vanadium oxide as its main component and is represented by the general formula AxVOx+1.5+d. Here, A is at least one selected from an alkali element, an alkaline-earth element, and a rare-earth element, x is a numerical value within the range of 0.2 to 2, and d is a non-stoichiometric ratio of oxygen and is a numerical value within the range of from −1 to 1.
摘要翻译： 使用传统的热电转换材料，其热电转换性能不足，并且在氧化气氛和空气气氛中的问题是达到稳定的性能。 鉴于此，根据本发明，热电材料由具有氧化钒作为其主要成分的复合氧化物制成，并且由通式A x X x X + 1.5 + d 。 这里，A为选自碱金属元素，碱土金属元素和稀土元素中的至少一种，x为0.2〜2的数值，d为氧的非化学计量比 是-1〜1范围内的数值。
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78.发明授权公开(公告)号：US06778425B1
公开(公告)日：2004-08-17
申请号：US09856847
申请日：2001-08-22
IPC分类号： G11C1100
CPC分类号： H01L43/12 , G11C11/15 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01L27/222 , H01L43/08
摘要： A magneto-resistive effect memory element according to the present invention includes a first ferromagnetic film; a second ferromagnetic film; a first nonmagnetic film provided between the first ferromagnetic film and the second ferromagnetic film, a first conductive film for generating a magnetic field for causing magnetization inversion in at least one of the first ferromagnetic film and the second ferromagnetic film, the first conductive film not being electrically in contact with the first ferromagnetic film or the second ferromagnetic film; and a second conductive film and a third conductive film for supplying an electric current to the first ferromagnetic film, the first nonmagnetic film, and the second ferromagnetic film. The first ferromagnetic film and the second ferromagnetic film have different magnetization inversion characteristics with respect to the magnetic field, and the first nonmagnetic film contains at least a nitride.
摘要翻译： 根据本发明的磁阻效应存储元件包括第一铁磁膜; 第二铁磁膜; 设置在第一铁磁膜和第二铁磁膜之间的第一非磁性膜，用于产生用于在第一铁磁膜和第二铁磁膜中的至少一个中引起磁化反转的磁场的第一导电膜，第一导电膜不是 与第一铁磁膜或第二铁磁膜电接触; 以及用于向第一铁磁膜，第一非磁性膜和第二铁磁性膜提供电流的第二导电膜和第三导电膜。 第一铁磁膜和第二铁磁膜相对于磁场具有不同的磁化反转特性，并且第一非磁性膜至少含有氮化物。
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79.发明授权公开(公告)号：US06680831B2
公开(公告)日：2004-01-20
申请号：US09948175
申请日：2001-09-06
申请人： Masayoshi Hiramoto , Hiroshi Sakakima , Hideaki Adachi , Nozomu Matukawa , Kenji Iijima , Mitsuo Satomi
发明人： Masayoshi Hiramoto , Hiroshi Sakakima , Hideaki Adachi , Nozomu Matukawa , Kenji Iijima , Mitsuo Satomi
IPC分类号： G11B539
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T428/1107
摘要： The invention provides a magnetoresistive element in which the pinned magnetic layer includes at least one non-magnetic film and magnetic films sandwiching that non-magnetic film, and the magnetic films are coupled with one another by magnetostatic coupling via the non-magnetic film. This element has an improved thermal resistance. Furthermore, the invention provides a magnetoresistive element in which the pinned magnetic layer is as described above. The magnetic films can be coupled with one another by magnetostatic coupling or antiferromagnetic coupling generating negative magnetic coupling. In this element, the magnetic field shift is reduced. Furthermore, the invention provides a magnetoresistive element in which at least one of the magnetic layers sandwiching the intermediate layer includes an oxide ferrite having a plane orientation with a (100), (110) or (111) plane. A magnetic field is introduced in a direction of the axis of easy magnetization in the plane. This oxide can be formed by sputtering with an oxide target while applying a bias voltage to a substrate including a plane on which the oxide ferrite is to be formed so as to adjust the amount of oxygen supplied to the oxide ferrite from the target.
摘要翻译： 本发明提供了一种磁阻元件，其中被钉扎的磁性层包括至少一个非磁性膜和夹在该非磁性膜上的磁性膜，并且磁性膜通过非磁性膜的静磁耦合彼此耦合。 该元件具有改善的热阻。 此外，本发明提供一种磁阻元件，其中钉扎磁性层如上所述。 磁性膜可以通过产生负磁耦合的静磁耦合或反铁磁耦合彼此耦合。 在该元件中，磁场偏移被减小。 此外，本发明提供一种磁阻元件，其中夹持中间层的至少一个磁性层包括具有（100），（110）或（111）面的平面取向的氧化物铁氧体。 在平面中的易磁化轴的方向上引入磁场。 该氧化物可以通过用氧化物靶溅射形成，同时向包括要在其上形成氧化物铁氧体的平面的衬底施加偏置电压，以调节从目标物供给到氧化物铁氧体的氧的量。
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公开(公告)号：US06479153B1
公开(公告)日：2002-11-12
申请号：US09536718
申请日：2000-03-28
申请人： Mitsuru Kato , Hideaki Adachi
发明人： Mitsuru Kato , Hideaki Adachi
IPC分类号： B05D302
CPC分类号： D06N3/14 , Y10S428/904 , Y10T428/31551 , Y10T428/31565 , Y10T428/31786
摘要： A leather-like sheet is prepared by impregnating a fibrous substrate, which may comprise a microfine fiber-forming fiber, with a thermally gellable composite resin emulsion obtained by emulsion-polymerizing an ethylenically unsaturated monomer (B) in the presence of a polyurethane emulsion (A) at a weight ratio of 90/10 to 10/90, solidifying the thermally gellable composite emulsion in the impregnated fibrous substrate, and if the fibrous substrate is a microfine fiber-forming fiber, converting the microfine fiber-forming fiber to a microfine fiber. After impregnation, the emulsion in the impregnated fibrous substrate is thermally solidified, thereby producing a leather-like sheet having excellent softness and fulfillment feeling, and good hand feel, feel and physical properties like that of natural leather. A film of the composite resin has a specific elastic modulus.
摘要翻译： 通过在聚氨酯乳液的存在下将含有烯键式不饱和单体（B）的乳液聚合得到的可热凝胶化的复合树脂乳液浸渍到可以包含微细纤维形成纤维的纤维基材上来制备皮革状片材（ A）以90/10至10/90的重量比固化，固化浸渍的纤维基材中的可热凝胶化复合乳液，如果纤维基材是微细纤维形成纤维，则将超细纤维形成纤维转化为微细 纤维。 浸渍后，浸渍的纤维基材中的乳液被热固化，由此生产出具有优异的柔软度和实现感的皮革样片材，以及与天然皮革相似的手感，手感和物理性能。 复合树脂的膜具有比弹性模量。
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