摘要:
This disclosure provides a method of accurately determining expected transaction times associated with flash memory subdivisions, such as devices, blocks or pages. By performing a test transaction to program each bit of each such unit, the maximum expected programming time of each unit may be determined in advance and used for scheduling purposes. For example, in a straightforward implementation, a relatively accurate, empirically measured time limit may be identified and used to efficiently manage and schedule flash memory transactions without awaiting ultimate resolution of attempts to write to a non-responsive page. This disclosure also provides other uses of empirically-measured maximum flash memory transaction times, including via multiple memory modes and prioritized memory; for example, if a high performance mode is desired, low variation in flash memory transaction times may be tolerated, and units not satisfying these principles may be marked relatively quickly. A mechanism is also provided for recalibrating memory previously marked. By minimizing variability, flash memory can be applied to a broader range of designs and potentially to a broader set of main memory applications.
摘要:
This disclosure provides a method and system that segment flash memory to have differently managed regions. More particularly, flash memory is segmented into a “non-volatile” region, where program counts are restricted to preserve baseline retention assumptions, and a “volatile” region, where program counts are unrestricted. Contrary to conventional wisdom, wear leveling is not performed on all flash memory, as the volatile region is regarded as degraded, and as the non-volatile region has program counts restricted to promote long-term retention. More than two regions may also be created; each of these may be associated with intermediate program counts and volatility expectations, and wear leveling may be applied to each of these on an independent basis if desired. Refresh procedures may optionally be applied to the region of flash memory which is treated as volatile memory.
摘要:
Embodiments of a circuit are described. This circuit includes control logic that generates multiple piecewise-erase commands to erase information stored in a storage cell of a memory device formed within another circuit. Note that execution of a single one of the multiple piecewise-erase commands within the memory device may be insufficient to erase the information stored in the storage cell. Moreover, the first circuit includes an interface that receives the multiple piecewise-erase commands from the control logic and that transmits the multiple piecewise-erase commands to the memory device.
摘要:
Techniques for improved timing control of memory devices are disclosed. In one embodiment, the techniques may be realized as a memory controller to communicate with a memory device via a communications link. The memory controller may comprise a memory interface to exchange data with the memory device via a set of N conductors according to at least one clock, the data being encoded such that each M bits of data are represented by at least one symbol and each symbol is associated with a combination of signal levels on a group of n conductors, wherein M
摘要:
Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.
摘要:
A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period. In a variation of this system, the phase detector on the memory chip is configured to receive signals including a clock signal, a marking signal and a data-strobe signal from the memory controller, wherein the marking signal includes a pulse which marks a specific clock cycle in the clock signal. In this variation, the phase detector is configured to use the marking signal to window the specific clock cycle in the clock signal, and to use the data-strobe signal to capture the windowed clock signal, thereby creating a feedback signal which is returned to the memory controller to facilitate calibration of the timing relationship.
摘要:
The point-to-point interconnection system for stacked devices includes a device, a substrate, operational circuitry, at least three electrical contacts and a conductor. The substrate has opposing first and second surfaces. A first electrical contact is mechanically coupled to the first surface of the device and electrically coupled to the operational circuitry. The second electrical contact is mechanically coupled to the first surface. The third electrical contact is mechanically coupled to the second surface opposite the first electrical contact. The conductor electrically couples the second electrical contact to the third electrical contact.