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公开(公告)号：US06476435B1
公开(公告)日：2002-11-05
申请号：US08940307
申请日：1997-09-30
IPC分类号： H01L27108
CPC分类号： H01L27/1087 , H01L27/10867
摘要： Methods for fabricating low leakage trenches for Dynamic Random Access Memory (DRAM) cells and the devices formed thereby are disclosed. In one embodiment of the present invention, the method includes etching a container cell in an isolation film that is disposed within a trench. The container cell forms a vertical interface with the semiconductor substrate on one side through the isolation film. Formation of the container cell is self-aligning wherein previously-formed gate stacks act as etch stops for the container cell etch. In this way the container cell size is dependent for proper etch alignment only upon proper previous alignment and spacing of the gate stacks. The method of forming the container cell within an isolation film that is within a trench in the semiconductor substrate prevents cell-bit line shorting where the cell and the bit line are not horizontally adjacent to each other.
摘要翻译： 公开了用于制造用于动态随机存取存储器（DRAM）单元的低泄漏沟槽和由此形成的器件的方法。 在本发明的一个实施例中，该方法包括在布置在沟槽内的隔离膜中蚀刻容器单元。 容器单元通过隔离膜在一侧与半导体衬底形成垂直接合。 容器电池的形成是自对准的，其中先前形成的栅极叠层用作容器电池蚀刻的蚀刻停止。 以这种方式，只有在栅极堆叠的适当的先前对准和间隔时，容器单元尺寸才依赖于适当的蚀刻对准。 在半导体衬底内的沟槽内的隔离膜内形成容器单元的方法防止了单元和位线彼此不水平相邻的单元位线短路。
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72.发明授权Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers 有权化学机械平面化机和均匀平面化半导体晶片的方法公开(公告)号：US06458015B1
公开(公告)日：2002-10-01
申请号：US09988865
申请日：2001-11-19
申请人： Karl M. Robinson , Chris Chang Yu
发明人： Karl M. Robinson , Chris Chang Yu
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B49/16 , Y10S156/93 , Y10S156/934 , Y10S438/959 , Y10T156/11 , Y10T156/19
摘要： An apparatus and method for uniformly planarizing a surface of a semiconductor wafer and accurately stopping CMP processing at a desired endpoint. In one embodiment, a planarizing machine has a platen mounted to a support structure, an underpad attached to the platen, a polishing pad attached to the underpad, and a wafer carrier assembly. The wafer carrier assembly has a chuck with a mounting cavity in which the wafer may be mounted, and the wafer carrier assembly moves the chuck to engage a front face of the wafer with the planarizing surface of the polishing pad. The chuck and/or the platen moves with respect to the other to impart relative motion between the wafer and the polishing pad. The planarizing machine also includes a pressure sensor positioned to measure the pressure at an area of the wafer as the platen and the chuck move with respect to each other and while the wafer engages the planarizing surface of the polishing pad. The pressure sensor generates a signal in response to the measured pressure that corresponds to a planarizing parameter of the wafer. In a preferred embodiment, the planarizing machine further includes a converter operatively connected to the pressure sensor, a controller operatively connected to the converter, and a plurality of drivers operatively connected to the controller and positioned in the mounting cavity.
摘要翻译： 一种用于均匀平坦化半导体晶片的表面并且在期望的端点处精确地停止CMP处理的装置和方法。 在一个实施例中，平面化机器具有安装到支撑结构的压板，附接到压板的底板，附接到底垫的抛光垫和晶片承载器组件。 晶片载体组件具有一个具有安装空腔的卡盘，晶片可以安装在该卡盘中，并且晶片载体组件移动卡盘以与抛光垫的平坦化表面接合晶片的正面。 卡盘和/或压板相对于另一个移动，以在晶片和抛光垫之间施加相对运动。 平面化机器还包括压力传感器，定位成当压板和卡盘相对于彼此移动并且当晶片与抛光垫的平坦化表面接合时，测量晶片的区域处的压力。 压力传感器响应于对应于晶片的平坦化参数的测量压力产生信号。 在优选实施例中，平面化机器还包括可操作地连接到压力传感器的转换器，可操作地连接到转换器的控制器和可操作地连接到控制器并且定位在安装腔中的多个驱动器。
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公开(公告)号：US06455916B1
公开(公告)日：2002-09-24
申请号：US08631638
申请日：1996-04-08
申请人： Karl M. Robinson
发明人： Karl M. Robinson
IPC分类号： H01L2900
CPC分类号： H01L28/55
摘要： A capacitor comprising a first electrode, a second electrode, and a dielectric material and an organic isolation matrix forming at least one layer between the first and second electrodes is provided. Also provided are other integrated circuit devices containing a dielectric material and an organic isolation matrix in contact with the dielectric material.
摘要翻译： 提供包括第一电极，第二电极和介电材料的电容器以及在第一和第二电极之间形成至少一层的有机隔离矩阵。 还提供了包含电介质材料和与电介质材料接触的有机隔离矩阵的其它集成电路器件。
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公开(公告)号：US06431960B1
公开(公告)日：2002-08-13
申请号：US09593046
申请日：2000-06-12
IPC分类号： B24B700
CPC分类号： B24B37/245 , B24B37/205
摘要： The present invention provides a method of limiting mechanical abrasion, that includes polishing a surface with a pad having a first member defining a first polishing surface and comprising a first material, and limiting abrasion of the surface with a surface abrasion impeding second member, the second member defining a second polishing surface and comprising a second material.
摘要翻译： 本发明提供了一种限制机械磨损的方法，其包括用具有限定第一抛光表面的第一构件的衬垫抛光表面并且包括第一材料并且限制表面与表面磨损阻碍第二构件的磨损，第二构件 构件，其限定第二抛光表面并且包括第二材料。
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公开(公告)号：US06331139B2
公开(公告)日：2001-12-18
申请号：US09795283
申请日：2001-02-27
IPC分类号： B24D1700
摘要： A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated polishing pad that is moved over a platen either between or during the planarization cycles, and a support pad that is moved along with the polishing pad. The support pad can be an elongated member that extends between a supply roller and a take-up roller, or can include a continuous member that extends around the spaced apart rollers. The platen can also be movable along with the support pad and can be supported by fluid jets, rollers, or a rotating bladder. Cleaning devices and/or milling devices can treat the surfaces of the polishing pad, the support pad and/or the platen to reduce the likelihood for contaminants to become caught between these components as they engage with each other.
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公开(公告)号：US06290579B1
公开(公告)日：2001-09-18
申请号：US09479148
申请日：2000-01-07
IPC分类号： B24B700
CPC分类号： B24B37/245 , B24B37/205
摘要： Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished. Preferably, a portion of the second member can be removed from the polishing pad so that the first polishing surface extends beyond the second polishing surface to provide for a fixed amount of abrasion using the first member prior to the second member contacting the surface and substantially reducing or stopping the polishing process.
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公开(公告)号：US06254460B1
公开(公告)日：2001-07-03
申请号：US09593045
申请日：2000-06-12
IPC分类号： B24B700
CPC分类号： B24B37/245 , B24B37/205
摘要： Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished. Preferably, a portion of the second member can be removed from the polishing pad so that the first polishing surface extends beyond the second polishing surface to provide for a fixed amount of abrasion using the first member prior to the second member contacting the surface and substantially reducing or stopping the polishing process.
摘要翻译： 公开了使用固定研磨抛光垫进行表面的机械抛光的装置和方法。 该设备包括与晶片支撑件相对定位的抛光垫，以提供放置在支撑件上的晶片的表面的抛光。 抛光垫包括第一构件，其具有由研磨第一材料形成的第一抛光表面，该研磨第一材料在抛光期间在结构上可降解。 抛光垫还包括第二构件，其具有由第二材料形成的第二抛光表面，该第二抛光表面相对于所述第一材料具有较低的可降解性和较少的磨蚀性。 第一和第二抛光表面限定与被抛光表面接触的抛光面。 优选地，第二构件的一部分可以从抛光垫移除，使得第一抛光表面延伸超过第二抛光表面，以在第二构件接触表面之前使用第一构件提供固定量的磨损，并且基本上减少 或停止抛光过程。
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公开(公告)号：US6103627A
公开(公告)日：2000-08-15
申请号：US890368
申请日：1997-07-14
IPC分类号： B08B3/08 , C11D7/06 , C11D7/08 , C11D11/00 , H01L21/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/02052 , B08B3/08 , C11D11/0047 , C11D7/06 , C11D7/08 , H01L21/67051 , H01L21/67057
摘要： A chemical mechanical polishing step is performed to expose a silicon/silicon dioxide interface on a surface situated on a semiconductor substrate. The semiconductor substrate is dipped in a solution of about 200 parts of deionized water, about 1 part of hydrofluoric acid, and at least 5 parts tetramethyl ammonium hydroxide. The exposed silicon/silicon dioxide interface is then contacted with an organic carboxylic acid surfactant having a critical micelle concentration greater than or equal to 10.sup.-7 m/l and having a pH from about 2.2 to about 7. Lastly, the exposed silicon/silicon dioxide interface is rinsed in deionized water or sulfuric acid to remove silicon dioxide particles from the exposed silicon/silicon dioxide interface, leaving a very clean, low particulate surface on both the silicon dioxide and silicon portions thereof, with little or no etching of the silicon portion.
摘要翻译： 进行化学机械抛光步骤以暴露位于半导体衬底上的表面上的硅/二氧化硅界面。 将半导体衬底浸入约200份去离子水，约1份氢氟酸和至少5份氢氧化四甲基铵溶液中。 然后暴露的硅/二氧化硅界面与临界胶束浓度大于或等于10-7m / l并具有约2.2至约7的pH的有机羧酸表面活性剂接触。最后，暴露的硅/硅 二氧化硅界面在去离子水或硫酸中漂洗以从暴露的硅/二氧化硅界面中除去二氧化硅颗粒，在其二氧化硅和硅部分上留下非常干净的低颗粒表面，几乎没有或没有蚀刻硅 一部分。
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79.发明授权Planarization process with abrasive polishing slurry that is selective to a planarized surface 失效使用对平坦化表面有选择性的研磨抛光浆料进行平面化处理
公开(公告)号：US6062952A
公开(公告)日：2000-05-16
申请号：US869256
申请日：1997-06-05
申请人： Karl M. Robinson , Guy Hudson , Scott Meikle
发明人： Karl M. Robinson , Guy Hudson , Scott Meikle
IPC分类号： B24B37/04 , C09G1/02 , C09K3/14 , H01L21/3105 , H01L21/321 , B24B1/00
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： Parameters of an improved planarization process for a semiconductor structure surface are optimized to cause a height reduction rate of the surface that adjusts downward by a factor of at least three once the surface becomes substantially planarized. Localized over-polishing is substantially eliminated by the acquired relative rate of removal for non-planar surfaces over planar surfaces. One embodiment of the improved planarization process comprises the use of a polishing slurry including a plurality of abrasive particles of a size selected that the polishing of a surface having a height causes a surface height reduction rate that drops once the surface becomes planarized. Preferred abrasive particle sizes are about 50 nm in mean diameter or less.
摘要翻译： 优化用于半导体结构表面的改进的平坦化工艺的参数被优化，以使表面的高度减小率在表面变得基本平坦化之后向下调整至少三倍。 通过在平坦表面上获得的非平面表面的相对去除速率基本上消除了局部超抛光。 改进的平坦化方法的一个实施方案包括使用包括多个研磨颗粒的研磨浆料，所述磨料颗粒的尺寸选择为：一旦表面平坦化，具有高度的表面的抛光导致降低表面高度的表面高度。 优选的磨粒尺寸为平均直径为约50nm或更小。
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公开(公告)号：US5919082A
公开(公告)日：1999-07-06
申请号：US917018
申请日：1997-08-22
CPC分类号： B24B37/245 , B24B37/205
摘要： Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished. Preferably, a portion of the second member can be removed from the polishing pad so that the first polishing surface extends beyond the second polishing surface to provide for a fixed amount of abrasion using the first member prior to the second member contacting the surface and substantially reducing or stopping the polishing process.
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