Abstract:
An electrical connector includes an insulative housing and a first and second contact received in the housing. The housing defines a mating face, a rear face opposite to the mating face, and a supporting face disposed between the mating and rear faces. A mating cavity recesses from the mating face towards the supporting face and disposed therebetween, and a receiving groove recesses forwards from the rear face and runs through the supporting face to communicate with the mating cavity. The first contact is retained in the receiving groove with an elastic contacting porting running through the supporting face and projecting into the mating cavity. The second contact is retained in the housing and includes two opposite second contacting portions disposed at two opposite sides of the elastic contacting portion of the first contact. A mating connector can be rotated to disengage from the electrical connector.
Abstract:
The present disclosure relates to a method for making a conjugated polymer. In the method, polyacrylonitrile, a solvent, and a catalyst are provided. The polyacrylonitrile is dissolved in the solvent to form a polyacrylonitrile solution. The catalyst is uniformly dispersed into the polyacrylonitrile solution. The polyacrylonitrile solution with the catalyst is heated to induce a cyclizing reaction of the polyacrylonitrile, thereby forming a conjugated polymer solution with conjugated polymer.
Abstract:
The present invention provides an electronic card connector, and intends to arrange one single testing terminal which forms a testing circuit together with an inherent conductive terminal of the electronic card connector, thereby obtaining a testing function which must be done by using two insertion pins in the prior art. Due to omitting one testing terminal, the volume of the electronic card connector is further reduced, and product assembly becomes more simply and opera table, thereby improving product efficiency, and greatly lowing manufacturing cost.
Abstract:
A portable optical disc player includes a housing having a top casing and a bottom casing, a traverse module, a plurality of first fixing members, and a plurality of fasteners. The traverse module is configured for reading information from, or writing information to, a disc and disposed (or sandwiched) between the top casing and the bottom casing. The plurality of first fixing members is mounted on the interior surface of one of the top casing and the bottom casing. The plurality of fasteners extends through the other of the top casing and the bottom casing, and is received in the plurality of first fixing members respectively so as to fix the top casing and the bottom casing together. Thus, the traverse module is firmly clamped by the top casing and the bottom casing accordingly.
Abstract:
One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.
Abstract:
A method for fabricating a semiconductor light-emitting device based on a strain adjustable multilayer semiconductor film is disclosed. The method includes epitaxially growing a multilayer semiconductor film on a growth substrate, wherein the multilayer semiconductor film comprises a first doped semiconductor layer, a second doped semiconductor layer, and a multi-quantum-wells (MQW) active layer; forming an ohmic-contact metal layer on the first doped semiconductor layer; depositing a metal substrate on top of the ohmic-contact metal layer, wherein the density and/or material composition of the metal substrate is adjustable along the vertical direction, thereby causing the strain in the multilayer semiconductor film to be adjustable; etching off the growth substrate; and forming an ohmic-electrode coupled to the second doped semiconductor layer.
Abstract:
A clathrate compound of formula (I): M8AxBy-x (I) wherein: M is an alkaline earth metal, a rare earth metal, an alkali metal, Cd, or a combination thereof, A is Ga, Al, In, Zn or a combination thereof; B is Ge, Si, Sn, Ni or a combination thereof; and 12≦x≦16, 40≦y≦43, x and y each is or is not an integer. Embodiments of the invention also include method of making and using the clathrate compound.
Abstract:
A catalyst for homopolymerizing and copolymerizing propylene and its preparation and use. The catalyst component includes titanium compound containing at least one Ti-halogen bond and at least two kinds of electron donor compounds A and B supported on MgCl2.nROH adduct, wherein the electron donor compound A is a compound of formula (I), the electron donor compound B is ester or ether compound; the molar ratio between compound A and compound B is 0.1-5; the molar ratio between the total amounts of the two kinds of electron donors and MgCl2.nROH is 0.01-1, based on the amount of MgCl2.nROH; and the molar ration between the titanium compound containing Ti-halogen bond and MgCl2.nROH is 1-200. The catalyst has high activity, high stereospecificity and good copolymerization performance. In addition, the morphology of the polymer obtained therefrom is good.
Abstract:
One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers. The device further includes a first electrode coupled to the first doped semiconductor layer, a second electrode coupled to the second doped semiconductor layer, and a silicone protective layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.
Abstract:
A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layer. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer.