公开(公告)号：US06852648B2

公开(公告)日：2005-02-08

申请号：US10435561

申请日：2003-05-09

Applicant: Omkaram Nalamasu ,  Chien-Shing Pai ,  Elsa Reichmanis ,  Shu Yang

Inventor： Omkaram Nalamasu ,  Chien-Shing Pai ,  Elsa Reichmanis ,  Shu Yang

IPC: C08G77/442 ,  C08L71/02 ,  C09D183/04 ,  H01L21/312 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02126 ,  C08G77/442 ,  C08G2650/58 ,  C08L71/02 ,  C09D183/04 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/7682 ,  Y10S438/96 ,  C08L83/00

Abstract: A process for fabricating an integrated semiconductor device with a low dielectric constant material and an integrated semiconductor device with the low dielectric constant material interposed between two conductors is disclosed. The low dielectric constant material has a dielectric constant of less than about 2.8. The low dielectric constant material is a porous glass material with an average pore size of less than about 10 nm. The low dielectric constant material is formed on a semiconductor substrate with circuit lines thereover by combining an uncured and unmodified glass resin with an amphiphilic block copolymer. The amphiphilic block copolymer is miscible in the uncured glass resin. The mixture is applied onto the semiconductor substrate and the glass resin is cured. The glass resin is further processed to decompose or otherwise remove residual block copolymer from the cured glass resin.

Abstract translation: 公开了一种制造具有低介电常数材料的集成半导体器件和介于两个导体之间的低介电常数材料的集成半导体器件的工艺。 低介电常数材料的介电常数小于约2.8。 低介电常数材料是平均孔径小于约10nm的多孔玻璃材料。 低介电常数材料通过将未固化和未改性的玻璃树脂与两亲性嵌段共聚物组合而形成在具有电路线的半导体衬底上。 两亲嵌段共聚物可与未固化的玻璃树脂混溶。 将混合物施加到半导体衬底上并使玻璃树脂固化。 进一步处理玻璃树脂以从固化的玻璃树脂中分解或以其它方式除去残留的嵌段共聚物。

公开(公告)号：US06680150B2

公开(公告)日：2004-01-20

申请号：US09866137

申请日：2001-05-25

Applicant: James W. Blatchford, Jr. ,  Omkaram Nalamasu ,  Stanley Pau

Inventor： James W. Blatchford, Jr. ,  Omkaram Nalamasu ,  Stanley Pau

IPC: G03F900

CPC classification number: G03F1/32 ,  G03F1/36

Abstract: Sidelobe formation in photolithographic patterns is suppressed by non-rectangular, non-circular contact openings formed in attenuated phase shift photomasks. The contact openings may be diamond-shaped, star-shaped, cross-shaped, or various other shapes which include multiple vertices. The contact opening shapes may include only straight line segments or they may include rounded segments. The contact openings may be arranged in various relative configurations such as in arrays in which the contact openings are sized and spaced by sub-wavelength dimensions. A method for forming contact openings on a photosensitive film uses the attenuated phase shift photomask to form a contact pattern free of pattern defects. A computer readable medium includes instructions for causing a photomask manufacturing tool to generate the attenuated phase-shift photomask.

Abstract translation: 光刻图案中的旁瓣形成被衰减的相移光掩模中形成的非矩形非圆形接触开口所抑制。 接触开口可以是菱形，星形，十字形或包括多个顶点的各种其他形状。 接触开口形状可以仅包括直线段，或者它们可以包括圆形段。 接触开口可以以各种相对构造布置，例如在其中接触开口的尺寸和亚波长尺寸间隔开的阵列中。 用于在感光膜上形成接触开口的方法使用衰减的相移光掩模来形成没有图案缺陷的接触图形。 计算机可读介质包括用于使光掩模制造工具产生衰减的相移光掩模的指令。

公开(公告)号：US06296984B1

公开(公告)日：2001-10-02

申请号：US09268448

申请日：1999-03-12

Applicant: Allen H. Gabor ,  Francis Michael Houlihan ,  Omkaram Nalamasu

Inventor： Allen H. Gabor ,  Francis Michael Houlihan ,  Omkaram Nalamasu

IPC: G03F7004

CPC classification number: G03F7/0045 ,  G03F7/039 ,  Y10S430/115

Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. The resist material also contains a photoacid generator and a radical scavenger. The radical scavenger reduces the amount of aromatic compounds outgassed from the resist during the lithographic process. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

Abstract translation: 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料包含垂直于聚合物的酸不稳定基团或与聚合物组合的溶解抑制剂。 酸不稳定基团显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料还含有光致酸产生剂和自由基清除剂。 自由基清除剂减少了在光刻过程中从抗蚀剂中脱气的芳族化合物的量。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

公开(公告)号：US06218057B1

公开(公告)日：2001-04-17

申请号：US09293103

申请日：1999-04-16

Applicant: Raymond Andrew Cirelli ,  Omkaram Nalamasu ,  Stanley Pau ,  George Patrick Watson

Inventor： Raymond Andrew Cirelli ,  Omkaram Nalamasu ,  Stanley Pau ,  George Patrick Watson

IPC: G03F900

CPC classification number: G03F7/0035

Abstract: A lithographic process for making an article such as a semiconductor device or a lithographic mask is disclosed. In the process, articles are fabricated by a sequence of steps in which materials are deposited on a substrate and patterned. These patterned layers are used to form devices on the semiconductor substrate. The desired pattern is formed by introducing an image of a first pattern in a layer of energy sensitive material. The image is then developed to form a first pattern. A layer of energy sensitive material is then formed over the first pattern. An image of a second pattern is then formed in the layer of energy sensitive material formed over the first pattern. The second pattern is then developed. The desired pattern is then developed from the first pattern and the second pattern.

Abstract translation: 公开了用于制造诸如半导体器件或光刻掩模的物品的光刻工艺。 在此过程中，通过一系列步骤制造制品，其中将材料沉积在衬底上并图案化。 这些图案化层用于在半导体衬底上形成器件。 通过在第一层能量敏感材料中引入第一图案的图像来形成所需的图案。 然后显影图像以形成第一图案。 然后在第一图案上形成一层能量敏感材料。 然后在形成在第一图案上的能量敏感材料层中形成第二图案的图像。 然后开发第二种模式。 然后从第一图案和第二图案展开期望的图案。

公开(公告)号：US5750312A

公开(公告)日：1998-05-12

申请号：US236706

申请日：1994-05-02

Applicant: Edwin Arthur Chandross ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Gary Newton Taylor ,  Larry Flack Thompson

Inventor： Edwin Arthur Chandross ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Gary Newton Taylor ,  Larry Flack Thompson

IPC: C08L33/00 ,  C08L33/04 ,  G03F7/004 ,  G03F7/027 ,  G03F7/039 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  G03C5/00 ,  G03F7/00

CPC classification number: G03F7/092 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/094 ,  Y10S430/162

Abstract: It has been found that surface reactions with basic materials such as amines found in the processing environment during lithographic processing contribute to a loss of linewidth control for resists such as chemically amplified resists. This loss in linewidth results from the reaction of the acid generated by exposing radiation with, for example, the amine resulting in a lack of chemical reaction where such reaction is desired. The problem is solved in one embodiment by employing an acid containing barrier layer on the resist.

Abstract translation: 已经发现，在光刻处理期间在处理环境中发现的碱性物质如胺的表面反应有助于抗蚀剂如化学放大抗蚀剂的线宽控制的损失。 这种线宽的损失是由于通过曝光辐射而产生的酸与例如胺产生的酸的反应导致缺乏需要这种反应的化学反应。 在一个实施方案中通过在抗蚀剂上使用含酸阻挡层来解决问题。

公开(公告)号：US5741629A

公开(公告)日：1998-04-21

申请号：US730560

申请日：1996-10-15

Applicant: Edwin Arthur Chandross ,  Janet Mihoko Kometani ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Kathryn Elizabeth Uhrich

Inventor： Edwin Arthur Chandross ,  Janet Mihoko Kometani ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Kathryn Elizabeth Uhrich

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  G03F7/38 ,  H01L21/027 ,  G03C5/00

CPC classification number: G03F7/0758 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/039

Abstract: Polymers suitable for chemically amplified resists based on styrene chemistry are advantageously formed with a meta substituent on the phenyl ring of the styrene moiety. Additionally, polymers for such applications including, but not limited to, meta substituted polymers are advantageously formed by reacting a first monomer having a first protective group with a second monomer having a second protective group. After polymerization, the second protective group is removed without substantially affecting the first protective group. For example, if the first protective group is an alkoxy carbonyl group, and the second protective group is a silyl ether group, treatment with a lower alcohol with trace amounts of acid transforms the silyl group into an OH-moiety without affecting the alkoxy carbonyl group.

Abstract translation: 适用于基于苯乙烯化学的化学放大抗蚀剂的聚合物有利地由苯乙烯部分的苯环上的间位取代基形成。 此外，通过使具有第一保护基的第一单体与具有第二保护基的第二单体反应，可有利地形成用于这种应用的聚合物，包括但不限于间位取代的聚合物。 聚合后，除去第二保护基，而基本不影响第一保护基。 例如，如果第一保护基为烷氧基羰基，第二保护基为甲硅烷基醚基，则用低级醇与微量酸处理将甲硅烷基转变为OH-部分而不影响烷氧基羰基 。