公开(公告)号：US06869332B2

公开(公告)日：2005-03-22

申请号：US10412038

申请日：2003-04-10

Applicant: Fred C. Redeker ,  Rajeev Bajaj

Inventor： Fred C. Redeker ,  Rajeev Bajaj

IPC: B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  H01L21/00 ,  H01L21/321 ,  B24B7/22

CPC classification number: B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  G01B7/105

Abstract: A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.

Abstract translation: 在基板上以第一抛光速率抛光基板的化学机械抛光金属层的方法。 用涡流监测系统监测抛光，当涡流监测系统指示金属层的预定厚度保留在基板上时，抛光速率降低到第二抛光速率。 然后用光学监测系统监测抛光，并且当光学监测系统指示底层至少部分暴露时，停止抛光。

公开(公告)号：US20050032381A1

公开(公告)日：2005-02-10

申请号：US10939750

申请日：2004-09-13

Applicant: Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred Redeker

Inventor： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred Redeker

IPC: B24B1/00 ,  B24B5/00 ,  B24B29/00 ,  B24B37/04 ,  C23F1/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

公开(公告)号：US06537144B1

公开(公告)日：2003-03-25

申请号：US09505899

申请日：2000-02-17

Applicant: Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24D1100

CPC classification number: B24B37/26 ,  B24B53/017 ,  H01L21/3212

Abstract: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06520840B1

公开(公告)日：2003-02-18

申请号：US09692723

申请日：2000-10-19

Applicant: Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: C09K3/1463 ,  C09G1/02

Abstract: A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

Abstract translation: 用能够氧化经历平坦化的金属的氧化剂配制CMP浆料，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 浆料还可包括磨料颗粒，抑制剂，pH调节剂及其组合。

公开(公告)号：US06436302B1

公开(公告)日：2002-08-20

申请号：US09492267

申请日：2000-01-27

Applicant: Juy-Lung Li ,  Tse-Yong Yao ,  Fred C. Redeker ,  Rajeev Bajaj ,  Yutao Ma

Inventor： Juy-Lung Li ,  Tse-Yong Yao ,  Fred C. Redeker ,  Rajeev Bajaj ,  Yutao Ma

IPC: H01L21463

CPC classification number: H01L21/7684 ,  H01L21/02074 ,  H01L21/3212

Abstract: Cu metallization is treated to reduce defects and effect passivation, and to reduce leakage between lines, by removing surface defects subsequent to CMP and barrier layer removal. Embodiments include the sequential steps of: CMP and barrier layer removal; buffing with a solution comprising citric acid, ammonium hydroxide and deionized water to remove copper oxide; rinsing with deionized water or an inhibitor solution, e.g., benzotriazole or 5-methyl triazole in deionized water; buffing with an abrasive slurry; and rinsing with deionized water or an inhibitor solution.

Abstract translation: 处理Cu金属化以减少缺陷并实现钝化，并通过去除CMP和阻挡层去除之后的表面缺陷来减少线之间的泄漏。 实施例包括顺序步骤：CMP和阻挡层去除; 用包含柠檬酸，氢氧化铵和去离子水的溶液抛光以除去氧化铜; 用去离子水或抑制剂溶液（例如苯并三唑或5-甲基三唑）在去离子水中冲洗; 用磨料浆抛光; 并用去离子水或抑制剂溶液冲洗。

公开(公告)号：US06261157B1

公开(公告)日：2001-07-17

申请号：US09318225

申请日：1999-05-25

Applicant: Rajeev Bajaj ,  Fritz C. Redeker ,  John M. White ,  Shijian Li ,  Yutao Ma

Inventor： Rajeev Bajaj ,  Fritz C. Redeker ,  John M. White ,  Shijian Li ,  Yutao Ma

IPC: B24B722

CPC classification number: B24B37/345 ,  B24B27/0023 ,  H01L21/02074 ,  H01L21/3212

Abstract: A selective Damascene chemical mechanical polishing (CMP) technique is used to planarize a semiconductor device to remove surface topography. The semiconductor device includes a semiconductor layer formed on a substrate, an insulating layer formed over the semiconductor layer and patterned to expose a portion of the semiconductor layer, a barrier layer formed over the insulating layer and the exposed portion of the semiconductor layer, and an electrically conductive layer formed over the barrier layer. The semiconductor device is pressed against a first rotating polishing pad that has no embedded abrasive particles to remove a portion of the conductive layer that overlies both the barrier layer and the insulating layer. The semiconductor device is then pressed against a second rotating polishing pad that has embedded abrasive particles to expose a portion of the barrier layer that overlies the insulating layer. The device is then pressed against a third rotating polishing pad that has no embedded abrasive particles to remove the portion of the barrier layer that overlies the insulating layer.

Abstract translation: 使用选择性的大马士革化学机械抛光（CMP）技术来平面化半导体器件以去除表面形貌。 半导体器件包括形成在衬底上的半导体层，形成在半导体层上并被图案化以暴露半导体层的一部分的绝缘层，形成在绝缘层上的阻挡层和半导体层的暴露部分， 形成在阻挡层上的导电层。 半导体器件被压在没有嵌入的磨料颗粒的第一旋转抛光垫上，以去除覆盖阻挡层和绝缘层两者的导电层的一部分。 然后将半导体器件压在具有嵌入的磨料颗粒的第二旋转抛光垫上，以暴露位于绝缘层上的阻挡层的一部分。 然后将装置压在没有嵌入的磨料颗粒的第三旋转抛光垫上，以去除覆盖在绝缘层上的阻挡层的部分。

公开(公告)号：US6071816A

公开(公告)日：2000-06-06

申请号：US921131

申请日：1997-08-29

Applicant: David K. Watts ,  Rajeev Bajaj ,  Sanjit K. Das

Inventor： David K. Watts ,  Rajeev Bajaj ,  Sanjit K. Das

IPC: H01L21/304 ,  H01L21/321 ,  H01L21/302

CPC classification number: H01L21/32115

Abstract: A method of chemical mechanical planarization of a semiconductor device provides a semiconductor device having a device front surface and a device back surface with the device front surface being a top surface of a second metal layer. A first planarizing step planarizes the device front surface with a first medium to expose a device second front surface, where the first medium comprises a first abrasive component and a first chemical solution. A rinsing step then rinses the device back surface with water. A second planarizing step then planarizes the device second front surface with a second medium where the second medium comprises a second abrasive component and a second chemical solution.

Abstract translation: 半导体器件的化学机械平坦化的方法提供了具有器件正面和器件背面的半导体器件，器件前表面是第二金属层的顶表面。 第一平面化步骤用第一介质平坦化装置前表面以暴露装置第二前表面，其中第一介质包括第一研磨部件和第一化学溶液。 冲洗步骤然后用水冲洗设备背面。 第二平面化步骤然后用第二介质平面化设备第二前表面，其中第二介质包括第二研磨组分和第二化学溶液。

公开(公告)号：US5985755A

公开(公告)日：1999-11-16

申请号：US822025

申请日：1997-03-24

Applicant: Rajeev Bajaj ,  Janos Farkas ,  Sung C. Kim ,  Jaime Saravia

Inventor： Rajeev Bajaj ,  Janos Farkas ,  Sung C. Kim ,  Jaime Saravia

IPC: H01L21/304 ,  H01L21/321 ,  H01L21/4763

CPC classification number: H01L21/3212

Abstract: A process of polishing two dissimilar conductive materials deposited on semiconductor device substrate optimizes the polishing of each of the conductive material independently, while utilizing the same polishing equipment for manufacturing efficiency. A tungsten layer (258) and a titanium layer (256) of a semiconductor device substrate (250) are polished using one polisher (10) but two different slurry formulations. The two slurries can be dispensed sequentially onto the same polishing platen (132) from two different source containers (111 and 112), wherein the first slurry is dispensed until the tungsten is removed and then the slurry dispense is switched to the second slurry for removal of the titanium. In a preferred embodiment, the first slurry composition is a ferric nitrate slurry while the second slurry composition is an oxalic acid slurry.

Abstract translation: 抛光沉积在半导体器件衬底上的两种不同导电材料的工艺可以独立地优化每个导电材料的抛光，同时利用相同的抛光设备来制造效率。 使用一个抛光机（10），但是使用两种不同的浆料配方来抛光半导体器件基板（250）的钨层（258）和钛层（256）。 两个浆料可以从两个不同的源容器（111和112）顺序地分配到相同的抛光平台（132）上，其中分配第一浆料直到除去钨，然后将浆料分配切换到第二浆料以除去 的钛。 在优选的实施方案中，第一浆料组合物是硝酸铁浆料，而第二浆料组合物是草酸浆料。

公开(公告)号：US5899745A

公开(公告)日：1999-05-04

申请号：US887695

申请日：1997-07-03

Applicant: Sung C. Kim ,  Lei Ping Lai ,  Rajeev Bajaj ,  Adam Manzonie

Inventor： Sung C. Kim ,  Lei Ping Lai ,  Rajeev Bajaj ,  Adam Manzonie

IPC: B24B37/04 ,  B24B37/10 ,  B24B37/22 ,  H01L21/00 ,  H01L21/304

CPC classification number: B24B37/042 ,  B24B37/105 ,  B24B37/22 ,  H01L21/31053

Abstract: A chemical mechanical polishing (CMP) method utilizes a polishing pad (21) and an under pad (20). The under pad (20) has an edge portion (24) and a central portion (22). The central portion (22) has either a shore D hardness less than a shore D hardness of the portion (24), greater slurry absorption than the edge portion (24), or more compressibility than the edge portion (24). This composite material under pad (20) will improve polishing uniformity of a semiconductor wafer (39). In addition, the use of the polishing pads (20 and 21) allows for greater final wafer profile control than was previously available in the art (FIGS. 4-6).

Abstract translation: 化学机械抛光（CMP）方法利用抛光垫（21）和下垫（20）。 底垫（20）具有边缘部分（24）和中心部分（22）。 中心部分（22）具有小于部分（24）的肖氏D硬度的肖氏D硬度，比边缘部分（24）更大的浆料吸收或比边缘部分（24）更大的压缩性。 衬垫（20）下面的复合材料将改善半导体晶片（39）的抛光均匀性。 此外，使用抛光垫（20和21）允许比现有技术中可获得的更大的最终晶片轮廓控制（图4-6）。