公开(公告)号：US20050032381A1

公开(公告)日：2005-02-10

申请号：US10939750

申请日：2004-09-13

申请人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred Redeker

发明人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred Redeker

IPC分类号： B24B1/00 ,  B24B5/00 ,  B24B29/00 ,  B24B37/04 ,  C23F1/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

公开(公告)号：US06790768B2

公开(公告)日：2004-09-14

申请号：US10025144

申请日：2001-12-18

申请人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

发明人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

摘要翻译： 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光装置中，其中所述载体头包括保持环和 用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电 材料。

公开(公告)号：US06960521B2

公开(公告)日：2005-11-01

申请号：US10939750

申请日：2004-09-13

申请人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

发明人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

IPC分类号： B24B1/00 ,  B24B5/00 ,  B24B29/00 ,  B24B37/04 ,  C23F1/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

摘要翻译： 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光设备中，其中所述载体头包括保持环和 用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电 材料。

公开(公告)号：US07153188B1

公开(公告)日：2006-12-26

申请号：US11245558

申请日：2005-10-07

申请人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

发明人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

IPC分类号： B24B49/00

CPC分类号： B24B37/015

摘要： The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

摘要翻译： 承载头具有底座和衬底背衬结构，用于在抛光期间将衬底保持在抛光表面上。 衬底背衬结构连接到基底并且包括在抛光期间接触衬底背面的外表面。 衬底背衬结构还包括电阻加热系统以在外表面的区域和至少一个导热膜上分配热量。 所述外表面是所述至少一个导热膜的第一表面，并且所述电阻加热系统集成在所述至少一个导热膜之一内。

公开(公告)号：US06537144B1

公开(公告)日：2003-03-25

申请号：US09505899

申请日：2000-02-17

申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24D1100

CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06638143B2

公开(公告)日：2003-10-28

申请号：US09737414

申请日：2000-12-14

申请人： Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： B08B1/04 ,  B08B3/08 ,  B24B37/042 ,  B24B37/24 ,  B24B53/017 ,  B24D3/346 ,  H01L21/67046

摘要： Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

公开(公告)号：US06620027B2

公开(公告)日：2003-09-16

申请号：US10044379

申请日：2002-01-09

申请人： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

发明人： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

IPC分类号： B24B5100

CPC分类号： B24B37/12 ,  B24B37/042 ,  B24B37/24

摘要： Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.

公开(公告)号：US06561873B2

公开(公告)日：2003-05-13

申请号：US10093897

申请日：2002-03-08

申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US07070480B2

公开(公告)日：2006-07-04

申请号：US10269107

申请日：2002-10-10

申请人： Yongsik Moon ,  Kapila Wijekoon

发明人： Yongsik Moon ,  Kapila Wijekoon

IPC分类号： B24B1/00

CPC分类号： B24B37/26

摘要： Method and apparatus for polishing substrates. A chemical mechanical polishing article comprises a body and a patterned surface. The patterned surface comprises a plurality of slurry distribution grooves and a plurality of islands on the body. Each of the plurality of the islands comprises a base portion, a polishing surface disposed thereon, and a contoured surface disposed therebetween. The base portion comprises one or more sidewalls defining at least a portion of the plurality of slurry distribution grooves. The polishing surface is smaller than the base portion, the difference therebetween attributable to the contoured surface. In a particular embodiment, conductive materials and low k dielectric films are polished with reduced or minimum substrate surface damage.

摘要翻译： 抛光基板的方法和装置。 化学机械抛光制品包括主体和图案化表面。 图案化表面包括多个浆料分配槽和主体上的多个岛。 所述多个岛中的每一个包括基部，设置在其上的抛光表面和设置在其间的轮廓表面。 基部包括限定多个浆料分配槽的至少一部分的一个或多个侧壁。 抛光表面小于基部，其差异归因于轮廓表面。 在特定实施例中，导电材料和低k电介质膜被抛光，具有降低或最小的衬底表面损伤。

公开(公告)号：US08129212B2

公开(公告)日：2012-03-06

申请号：US12383350

申请日：2009-03-23

申请人： Kapila Wijekoon ,  Rohit Mishra ,  Michael P Stewart ,  Timothy Weidman ,  Hari Ponnekanti ,  Tristan R. Holtam

发明人： Kapila Wijekoon ,  Rohit Mishra ,  Michael P Stewart ,  Timothy Weidman ,  Hari Ponnekanti ,  Tristan R. Holtam

IPC分类号： H01L21/00

CPC分类号： H01L31/077 ,  H01L21/30608 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/075 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548

摘要： Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 μm to about 10 μm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 μm to about 8 μm on the substrate.

摘要翻译： 提供了表面纹理化晶体硅衬底的方法。 在一个实施方案中，该方法包括提供晶体硅衬底，用包含润湿剂的碱性溶液润湿衬底，以及在衬底上形成具有约1μm至约10μm深度结构的织构化表面。 在另一个实施例中，执行衬底纹理过程的方法包括提供晶体硅衬底，在HF水溶液中预清洗衬底，用包含聚乙二醇（PEG）化合物的KOH水溶液润湿衬底，并形成织构表面 具有在基板上具有约3μm至约8μm的深度的结构。