摘要:
A programmable CMOS device includes a PFET and an NFET that have a common floating gate. Depending on the configuration, the programmable CMOS device can be programmed, erased, and re-programmed repeatedly. The programming, erasure, and/or reprogramming can be effected by injection of electrons and/or holes into the floating gate. The programmable CMOS device can be employed as a fuse or an antifuse, to program a floating gate of another device, and/or to function as a latch. The programmable CMOS device can be formed employing standard logic compatible processes, i.e., without employing any additional processing steps.
摘要:
The present invention relates to methods and devices for reducing the threshold voltage difference between an n-type field effect transistor (n-FET) and a p-type field effect transistor (p-FET) in a complementary metal-oxide-semiconductor (CMOS) circuit located on a silicon-on-insulator (SOI) substrate. Specifically, a substrate bias voltage is applied to the CMOS circuit for differentially adjusting the threshold voltages of the n-FET and the p-FET. For example, a positive substrate bias voltage can be used to reduce the threshold voltage of the n-FET but increase that of the p-FET, while a negative substrate bias voltage can be used to increase the threshold voltage of the n-FET but reduce that of the p-FET. Further, two or more substrate bias voltages of different magnitudes and/or directions can be used for differentially adjusting the n-FET and p-FET threshold voltages in two or more different CMOS circuits or groups of CMOS circuits.
摘要:
A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns on the surface of the first low dielectric insulator in a single interconnect plane. A high dielectric constant material may be provided between the two patterns. A circuit for testing a plurality of these capacitors is also provided which includes a charge monitoring circuit, a coupling circuit and a control circuit.
摘要:
An inverted polycide extrinsic base contact serves as a diffusion source, yet still has low resistivity and is readily etchable down to silicon by techniques useful in manufacturing integrated circuits. The extrinsic base contact layer is made up of a metal silicide (e.g. WSi.sub.2) with an overlying doped polysilicon layer with coextensive apertures through doped polysilicon and metal silicide layers defining the emitter and intrinsic base region.The extrinsic base region is formed by diffusing boron impurities from the p.sup.+ polysilicon layer through the silicide layer. The silicide layer is of a metal silicide such as tungsten silicide (WSi.sub.2). The polysilicon layer acts as a diffusion source, since appropriate dopants (e.g., boron) diffuse rapidly through the metal silicide. Both the top surface of the p.sup.+ polysilicon layer and the sidewall edges of the polysilicon and silicide layers are covered by an insulating layer (e.g. SiO.sub.2) which also separates the emitter contact from the base contact layers.
摘要翻译:反向多硅化物非本征基极接触用作扩散源,但仍具有低电阻率,并且通过可用于制造集成电路的技术容易地向硅蚀刻。 外部基极接触层由金属硅化物(例如WSi2)与具有共同延伸孔的上覆掺杂多晶硅层组成,掺杂多晶硅和金属硅化物层限定发射极和本征基极区。 通过从p +多晶硅层通过硅化物层扩散硼杂质形成非本征基区。 硅化物层是诸如硅化钨(WSi2)之类的金属硅化物。 多晶硅层充当扩散源,因为合适的掺杂剂(例如硼)迅速扩散通过金属硅化物。 p +多晶硅层的顶表面和多晶硅和硅化物层的侧壁边缘都被绝缘层(例如SiO 2)覆盖,绝缘层也将发射极接触与基极接触层分开。
摘要:
A semiconductor circuit in which a plurality of transistors is provided, the collector regions/contacts and the base regions/contacts of the transistors being mutually self-aligned. In one embodiment, the collectors have conductive layer contacts (such as metal) and are self-aligned to polysilicon base contacts while in another embodiment the base contacts are comprised of a conductive (metal) layer while polysilicon is used for the collector contacts. The collectors of these transistors can be butted to a field oxide to reduce the extrinsic base area and to minimize excess charge storage in the base region. The base contacts, whether polysilicon or metal, etc. provide alternate base current paths so that the removal of the extrinsic base area does not adversely affect the total amount of base current which can flow. The use of a polysilicon layer for the base contacts, where "fingers" are provided by the polysilicon layer, enhances wirability and the mode of fabrication of the structure, since the polysilicon fingers can have an insulating layer (grown oxide) thereover to provide electrical isolation from over-lying conductors. These self-alignment techniques provide enhanced electrical properties since the distance between the base and collector contacts is minimized and since the base-emitter depletion layer capacitance, the stored charge and the base series resistance are reduced. From a processing standpoint, an additional masking step is not required to form the collector regions.
摘要:
A field effect transistor (FET) comprising a floating gate and a control gate in a stacked relationship with each other and being self-aligned with each other and self-aligned with respect to source and drain regions. The fabrication technique employed comprises delineating both the floating gate and control gate in the same lithographic masking step.
摘要:
A semiconductor device including a charge storage element present in a buried dielectric layer of the substrate on which the semiconductor device is formed. Charge injection may be used to introduce charge to the charge storage element of the buried dielectric layer that is present within the substrate. The charge that is injected to the charge storage element may be used to adjust the threshold voltage (Vt) of each of the semiconductor devices within an array of semiconductor devices that are present on the substrate.
摘要:
A germanium lateral bipolar junction transistor (BJT) is formed employing a germanium-on-insulator (GOI) substrate. A silicon passivation layer is deposited on the top surface of a germanium layer in the GOI substrate. Shallow trench isolation structures, an extrinsic base region structure, and a base spacer are subsequently formed. A germanium emitter region, a germanium base region, and a germanium collector region are formed within the germanium layer by ion implantation. A silicon emitter region, a silicon base region, and a silicon collector region are formed in the silicon passivation layer. After optional formation of an emitter contact region and a collector contact region, metal semiconductor alloy regions can be formed. A wide gap contact for minority carriers is provided between the silicon base region and the germanium base region and between the silicon emitter region and the germanium emitter region.
摘要:
A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
摘要:
An example embodiment is a memory cell including a SOI substrate. A first and second set of lateral bipolar transistors are fabricated on the SOI substrate. The first and second set of lateral bipolar transistors are electrically coupled to form two inverters. The inverters are cross coupled to form a memory element.