公开(公告)号：US06869896B2

公开(公告)日：2005-03-22

申请号：US10647959

申请日：2003-08-26

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

摘要翻译： 一种通过有机硅化合物和包含碳的氧化气体以恒定的RF功率水平的反应沉积低介电常数膜的方法和装置。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。

公开(公告)号：US06734115B2

公开(公告)日：2004-05-11

申请号：US10229992

申请日：2002-08-27

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L2131

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

公开(公告)号：US06593247B1

公开(公告)日：2003-07-15

申请号：US09553461

申请日：2000-04-19

申请人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

发明人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

IPC分类号： H01L2131

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1031

摘要： A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm2 and about 3.2 W/cm2. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH3)3SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

摘要翻译： 氧化硅层通过有机硅化合物的等离子体增强氧化制备，以沉积碳原子量至少为1％的膜。 通过以小于或等于有机硅化合物的流速的流量将氧引入处理室，并且以0.9W / cm 2的功率密度产生等离子体来沉积具有低水分含量和耐开裂性的膜 和约3.2W / cm 2。 可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。 有机硅化合物优选与每个硅原子键合2或3个碳原子，例如三甲基硅烷，（CH 3）3 SiH。 可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

公开(公告)号：US06448187B2

公开(公告)日：2002-09-10

申请号：US09792122

申请日：2001-02-21

申请人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

发明人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

摘要翻译： 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，将氧化硅基膜暴露于 水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。