公开(公告)号：US10886123B2

公开(公告)日：2021-01-05

申请号：US15974988

申请日：2018-05-09

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Moataz Bellah Mousa ,  Peng-Fu Hsu

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L21/3205

Abstract: A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NH2 radicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.

公开(公告)号：US10829852B2

公开(公告)日：2020-11-10

申请号：US15998775

申请日：2018-08-16

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Ward Johnson

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/52 ,  C23C16/455

Abstract: A reaction system is disclosed that may be used to prevent formation of contaminants. The reaction system includes a showerhead that may be configured with a gated nanochannel grid to prevent particular gaseous precursors from passing through depending on whether a voltage is applied. The gated nanochannel grid may allow for both polar and non-polar molecules to pass, or may be configured to allow just non-polar or just polar molecules to pass.

公开(公告)号：US20200056282A1

公开(公告)日：2020-02-20

申请号：US15998775

申请日：2018-08-16

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Ward Johnson

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52

Abstract: A reaction system is disclosed that may be used to prevent formation of contaminants. The reaction system includes a showerhead that may be configured with a gated nanochannel grid to prevent particular gaseous precursors from passing through depending on whether a voltage is applied. The gated nanochannel grid may allow for both polar and non-polar molecules to pass, or may be configured to allow just non-polar or just polar molecules to pass.

公开(公告)号：US10458018B2

公开(公告)日：2019-10-29

申请号：US14752712

申请日：2015-06-26

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455 ,  H01L29/49 ,  C23C16/32

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US20190304790A1

公开(公告)日：2019-10-03

申请号：US16356394

申请日：2019-03-18

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Peng-Fu Hsu ,  Ward Johnson ,  Petri Raisanen

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

公开(公告)号：US20180122709A1

公开(公告)日：2018-05-03

申请号：US15796593

申请日：2017-10-27

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Michael Eugen Givens ,  Petri Raisanen ,  Jan Willem Maes

IPC: H01L21/8238 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/285 ,  H01L27/092 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/823842 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/32133 ,  H01L21/823821 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78

Abstract: Methods for forming a semiconductor device and related semiconductor device structures are provided. In some embodiments, methods may include forming an NMOS gate dielectric and a PMOS gate dielectric over a substrate and forming a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, methods may also include, removing the first work function metal over the NMOS gate dielectric and forming a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, related semiconductor device structures may include an NMOS gate dielectric and a PMOS gate dielectric disposed over a semiconductor substrate. A PMOS gate electrode may be disposed over the PMOS gate dielectric and the PMOS gate electrode may include a first work function metal disposed over the PMOS gate dielectric and a second work function metal disposed over the first work function metal. A NMOS gate electrode may be disposed over the NMOS gate dielectric and the NMOS gate electrode may include the second work function metal.

公开(公告)号：US20170117203A1

公开(公告)日：2017-04-27

申请号：US15397319

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Petri Raisanen

IPC: H01L23/31 ,  C23C16/455 ,  C23C16/44 ,  H01L21/02

CPC classification number: H01L23/3171 ,  C23C16/4405 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67011 ,  H01L23/02 ,  H01L23/29 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US20170117202A1

公开(公告)日：2017-04-27

申请号：US15397237

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Xiaoqiang Jiang ,  Petri Raisanen ,  Pauline Calka

IPC: H01L23/31 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L23/3171 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/305 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02664 ,  H01L21/306 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L28/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US09558931B2

公开(公告)日：2017-01-31

申请号：US13941216

申请日：2013-07-12

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael Eugene Givens ,  Qi Xie ,  Petri Raisanen

IPC: H01L21/02 ,  H01L23/02 ,  H01L21/67 ,  H01L23/31 ,  H01L23/29 ,  H01L21/306

CPC classification number: H01L23/3171 ,  C23C16/4405 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67011 ,  H01L23/02 ,  H01L23/29 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

Abstract translation: 公开了用于钝化高迁移率半导体的表面的改进的方法和系统以及使用这些方法形成的结构和器件。 该方法包括向反应器的室提供高迁移率半导体表面，并将高迁移率半导体表面暴露于气相硫前体以钝化高迁移率半导体表面。

公开(公告)号：US20150140210A1

公开(公告)日：2015-05-21

申请号：US14606364

申请日：2015-01-27

Applicant: ASM IP HOLDING B.V.

Inventor： Sung-Hoon Jung ,  Petri Raisanen ,  Eric Jen Cheng Liu ,  Mike Schmotzer

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45544

Abstract: Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

Abstract translation: 公开了在反应器的反应室内减少物质的除气的系统和方法。 示例性方法包括在反应室内沉积阻挡层并使用清除前体与反应室表面上的物质反应。 示例性系统包括气相沉积系统，例如原子层沉积系统，其包括流体耦合到系统的反应室的阻挡层源和/或清除前体源。