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    Method of fabricating a quasi-substrate wafer and semiconductor body fabricated using such a quasi-substrate wafer
    71.
    发明授权
    Method of fabricating a quasi-substrate wafer and semiconductor body fabricated using such a quasi-substrate wafer 有权
    使用这种准基板晶片制造准基板晶片和半导体主体的方法

    公开(公告)号：US08012256B2

    公开(公告)日：2011-09-06

    申请号：US11668718

    申请日：2007-01-30

    申请人： Georg Brüderl ,  Christoph Eichler ,  Uwe Strauss

    发明人： Georg Brüderl ,  Christoph Eichler ,  Uwe Strauss

    IPC分类号： C30B29/06

    CPC分类号： H01L21/76254

    摘要： Disclosed are a method of fabricating a quasi-substrate wafer with a subcarrier wafer and a growth layer, and a semiconductor body fabricated using such a quasi-substrate wafer. In the method of fabricating a quasi-substrate wafer, a growth substrate water is fabricated that is provided with a separation zone and comprises the desired material of the growth layer. The growth substrate wafer is provided with a stress that counteracts a stress generated by the formation of the separation zone, and/or the stress generated by the formation of the separation zone is distributed, by structuring a first main race of the growth substrate water and/or the separation zone, to a plurality of subregions along the first main face. The growth substrate wafer with separation zone exhibits no or only slight bowing.

    摘要翻译： 公开了一种制造具有子载波晶片和生长层的准衬底晶片的方法，以及使用这种准衬底晶片制造的半导体本体。 在制造准衬底晶片的方法中，制造生长衬底晶片，其生长具有分离区并且包含生长层的所需材料。 生长衬底晶片具有抵消由形成分离区产生的应力的应力和/或分离区形成所产生的应力，通过构建生长衬底晶片的第一主面和 /或分离区，沿着第一主面向多个子区域。 具有分离区的生长衬底晶片没有显示或仅显示轻微的弯曲。

    Laser Light Source
    72.
    发明申请
    Laser Light Source 有权
    激光光源

    公开(公告)号：US20110051766A1

    公开(公告)日：2011-03-03

    申请号：US12809849

    申请日：2008-12-16

    申请人： Wolfgang Reill ,  Soenke Tautz ,  Peter Brick ,  Uwe Strauss

    发明人： Wolfgang Reill ,  Soenke Tautz ,  Peter Brick ,  Uwe Strauss

    IPC分类号： H01S5/10

    CPC分类号： H01S5/22 ,  H01S5/1017 ,  H01S5/1064 ,  H01S5/4031

    摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active layer having at least two active regions (45) which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence (10) along an emission direction (90), said side area being embodied as a radiation coupling-out area (12), a respective electrical contact area (30) above each of the at least two active regions (45) on a main surface (14) of the semiconductor layer sequence (10), and a surface structure in the main surface (14) of the semiconductor layer sequence (10), wherein the at least two active regions (45) are arranged in a manner spaced apart from one another in the active layer (40) transversely with respect to the emission direction (90), each of the electrical contact areas (30) has a first partial region (31) and a second partial region (32) having a width that increases along the emission direction (90) toward the radiation coupling-out area (12), the surface structure has, between the at least two electrical contact areas (30), at least one first depression (6) along the emission direction (90) and also second depressions (7), and the first partial regions (31) of the electrical contact areas (30) are in each case arranged between at least two second depressions (7).

    摘要翻译： 特别地，激光源包括具有活性层的半导体层序列（10），所述活性层具有至少两个有效区域（45），所述至少两个有源区域（45）适合于在操作期间通过半导体层序列（10）的侧面区域发射电磁辐射， 沿着发射方向（90），所述侧面区域被实施为辐射耦合区域（12），在主表面（14）上的至少两个有源区域（45）上方的相应的电接触区域（30） ）和半导体层序列（10）的主表面（14）中的表面结构，其中所述至少两个有源区（45）以彼此间隔开的方式布置 在相对于发射方向（90）横向的有源层（40）中，每个电接触区域（30）具有第一部分区域（31）和第二部分区域（32），其宽度沿着 发射方向（90）朝向辐射 所述表面结构在所述至少两个电接触区域（30）之间具有沿着所述发射方向（90）的至少一个第一凹陷（6）以及所述第二凹陷（7），以及 电接触区域（30）的第一部分区域（31）分别布置在至少两个第二凹陷部分（7）之间。

    Semiconductor Component and Method for Producing a Semiconductor Component
    73.
    发明申请
    Semiconductor Component and Method for Producing a Semiconductor Component 有权
    半导体元件及其制造方法

    公开(公告)号：US20110007767A1

    公开(公告)日：2011-01-13

    申请号：US12863673

    申请日：2009-03-09

    申请人： Christoph Eichler ,  Uwe Strauss

    发明人： Christoph Eichler ,  Uwe Strauss

    IPC分类号： H01S5/323 ,  H01L21/66

    CPC分类号： H01L22/10 ,  H01L22/12 ,  H01S5/22 ,  H01S2301/173

    摘要： A semiconductor component includes a semiconductor body with a semiconductor layer sequence having an active region, provided for generating coherent radiation, and an indicator layer. With respect to an interface which delimits the semiconductor body in regions in a vertical direction, on that side of said interface which is remote from the active region, the semiconductor body has a web-like region extending in a vertical direction between the interface and a surface of the semiconductor body. The indicator layer has a material composition that differs from that of the material of the web-like region which adjoins the indicator layer. A distance between the indicator layer and the surface is at most of the same magnitude as a distance between the interface and the surface.

    摘要翻译： 半导体部件包括具有半导体层序列的半导体本体，其具有用于产生相干辐射的有源区域和指示层。 关于在垂直方向的区域中限定半导体本体的界面，在远离有源区的所述界面的该侧，半导体本体具有在界面和a之间沿垂直方向延伸的网状区域 半导体体的表面。 指示剂层具有与邻接指示剂层的网状区域的材料组成不同的材料组成。 指示剂层和表面之间的距离与界面和表面之间的距离最大相同的大小。

    Semiconductor chip and method for producing a semiconductor chip
    75.
    发明申请
    Semiconductor chip and method for producing a semiconductor chip 有权
    半导体芯片及其制造方法

    公开(公告)号：US20090045426A1

    公开(公告)日：2009-02-19

    申请号：US12218492

    申请日：2008-07-14

    申请人： Michael Fehrer ,  Uwe Strauss

    发明人： Michael Fehrer ,  Uwe Strauss

    IPC分类号： H01L33/00

    CPC分类号： H01L33/145 ,  H01L33/04 ,  H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor chip (1) comprises a semiconductor body (2) having a semiconductor layer sequence having an active region (23) provided for generating radiation. A contact (4) is arranged on the semiconductor body (2). An injection barrier (5) is formed between the contact (4) and the active region (23). A method for producing a semiconductor chip is also disclosed.

    摘要翻译： 半导体芯片（1）包括具有半导体层序列的半导体本体（2），该半导体层序列具有用于产生辐射的有源区（23）。 在半导体本体（2）上设有触点（4）。 在触点（4）和有源区域（23）之间形成注入势垒（5）。 还公开了一种用于制造半导体芯片的方法。

    METHOD OF FABRICATING A QUASI-SUBSTARTE WAFER AND SEMICONDUCTOR BODY FABRICATED USING SUCH A QUASI-SUBSTARTE WAFER
    78.
    发明申请
    METHOD OF FABRICATING A QUASI-SUBSTARTE WAFER AND SEMICONDUCTOR BODY FABRICATED USING SUCH A QUASI-SUBSTARTE WAFER 有权
    使用这种基准晶体波形制造准二次晶体波形和半导体体的方法

    公开(公告)号：US20070175384A1

    公开(公告)日：2007-08-02

    申请号：US11668718

    申请日：2007-01-30

    申请人： Georg Bruderl ,  Christoph Eichler ,  Uwe Strauss

    发明人： Georg Bruderl ,  Christoph Eichler ,  Uwe Strauss

    IPC分类号： C30B23/00 ,  C30B19/00 ,  C30B25/00

    CPC分类号： H01L21/76254

    摘要： Disclosed are a method of fabricating a quasi-substrate wafer (17) with a subcarrier wafer (4) and a growth layer (120), and a semiconductor body fabricated using such a quasi-substrate wafer (17). In the method of fabricating a quasi-substrate wafer (17), a growth substrate wafer (1) is fabricated that is provided with a separation zone (2) and comprises the desired material of the growth layer (120). The growth substrate wafer (1) is provided with a stress that counteracts a stress generated by the formation of the separation zone, and/or the stress generated by the formation of the separation zone is distributed, by structuring a first main face (101) of the growth substrate wafer (1) and/or the separation zone (2), to a plurality of subregions along the first main face (101). The growth substrate wafer (1) with separation zone (2) exhibits no or only slight bowing.

    摘要翻译： 公开了一种制造具有子载波晶片（4）和生长层（120）的准衬底晶片（17）的方法，以及使用这种准衬底晶片（17）制造的半导体本体。 在制造准基板晶片（17）的方法中，制造生长衬底晶片（1），其具有分离区（2）并且包含生长层（120）的所需材料。 生长衬底晶片（1）具有抵消由形成分离区产生的应力的应力和/或通过形成分离区而产生的应力被分配，通过构造第一主面（101） 的生长衬底晶片（1）和/或分离区（2）连接到沿着第一主面（101）的多个子区域。 具有分离区（2）的生长衬底晶片（1）没有或只显示轻微的弯曲。

    Electromagnetic radiation generating semiconductor chip and method for making same
    80.
    发明申请
    Electromagnetic radiation generating semiconductor chip and method for making same 有权
    电磁辐射生成半导体芯片及其制造方法

    公开(公告)号：US20060011923A1

    公开(公告)日：2006-01-19

    申请号：US11154292

    申请日：2005-06-16

    申请人： Dominik Eisert ,  Uwe Strauss

    发明人： Dominik Eisert ,  Uwe Strauss

    IPC分类号： H01L29/15

    CPC分类号： H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0016

    摘要： An electromagnetic radiation generating semiconductor chip is disclosed. A semiconductor layer sequence suitable for generating electromagnetic radiation is grown on a first main face of a radioparent, electrically conductive growth substrate, for example, a SiC growth substrate. Provided on a second main face of said growth substrate that faces away from said semiconductor layer sequence is a roughening that acts as a diffuser for an electromagnetic radiation emitted into said growth substrate by said semiconductor layer sequence and that in particular has a scattering factor higher than 0.25. A layer or layer sequence reflective of the electromagnetic radiation is applied to said roughening. A method for making the semiconductor chip is also disclosed.

    摘要翻译： 公开了电磁辐射生成半导体芯片。 适用于产生电磁辐射的半导体层序列生长在放射性，导电的生长衬底（例如SiC生长衬底）的第一主面上。 提供在所述生长衬底的远离所述半导体层序列的第二主面上是粗糙化，其作为用于通过所述半导体层序列发射到所述生长衬底中的电磁辐射的扩散器，并且特别地具有高于 0.25。 将反射电磁辐射的层序列应用于所述粗糙化。 还公开了制造半导体芯片的方法。