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公开(公告)号：US08908733B2
公开(公告)日：2014-12-09
申请号：US13262583
申请日：2010-03-10
申请人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
发明人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition: 40≦∫c(z)dz−2.5N−1.5∫dz≦80.
摘要翻译： 在光电子半导体芯片（1）的至少一个实施例中，后者基于氮化物材料系统并且包括至少一个有源量子阱（2）。 至少一个有源量子阱（2）被设计成在操作时产生电磁辐射。 此外，至少一个有源量子阱（2）在平行于半导体芯片（1）的生长方向z的方向上包括N个连续区域（A），N是大于或等于2的自然数。至少 有源量子阱（2）的两个区域（A）具有相互不同的平均铟含量c。 此外，至少一个有源量子阱（2）满足条件：40＆nlE;∫c（z）dz-2.5N-1.5∫dz＆nlE; 80。
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公开(公告)号：US08268659B2
公开(公告)日：2012-09-18
申请号：US13011326
申请日：2011-01-21
IPC分类号： H01L21/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
摘要翻译： 一种用于制造边缘发射半导体激光器芯片的方法，其具有载体衬底，布置在载体衬底和边缘发射半导体激光器芯片的部件结构之间的层间隔。 中间层适于提供载体基底和部件结构之间的粘附。 组件结构具有用于产生辐射的活动区域。
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公开(公告)号：US20110051771A1
公开(公告)日：2011-03-03
申请号：US12920312
申请日：2009-01-28
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01S5/0217 , H01S5/0424 , H01S5/12 , H01S5/18308 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic component contains an epitaxial layer sequence (6) based on a nitride compound semiconductor having an active layer (4) and, wherein the epitaxial growth substrate (1) comprises Al1-xGaxN, where 0
摘要翻译： 光电子部件包含基于具有有源层（4）的氮化物半导体的外延层序列（6），并且其中外延生长衬底（1）包括Al 1-x Ga x N，其中0
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公开(公告)号：US20080049801A1
公开(公告)日：2008-02-28
申请号：US11824877
申请日：2007-07-02
IPC分类号： H01S5/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
摘要翻译： 指定的是边缘发射半导体激光器芯片，其包括载体衬底（1），促进载体衬底（1）和边缘发射半导体激光器芯片的部件结构（50）之间的粘合的中间层（2） 结构（50）包括用于产生辐射的活动区（5）。
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5.发明申请公开(公告)号：US20090206348A1
公开(公告)日：2009-08-20
申请号：US12298723
申请日：2007-04-20
CPC分类号： H01L31/184 , H01L21/76254 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y02E10/544
摘要： A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).
摘要翻译： 一种复合基板（1），其包括固定在所述基板主体（2）上的基板主体（2）和有效层（31）。 在实用层（31）和基板主体（2）之间布置有平坦化层（4）。 复合基板（1）的制造方法在设置的实用基板（3）上涂敷平坦化层（4）。 该实用基板（3）固定在复合基板（1）的基板主体（2）上。 随后分离实用基板（3），其中保留用于基板主体（2）上的复合基板（1）的效用基板（3）的有用层（31）。
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6.发明申请Luminous Means and Projector Comprising at Least One Luminous Means of this Type 审中-公开发光装置和投影仪包括这种类型的最少一个发光装置公开(公告)号：US20120039072A1
公开(公告)日：2012-02-16
申请号：US13141078
申请日：2009-10-19
申请人： Alfred Lell , Sönke Tautz , Uwe Strauss , Martin Rudolf Behringer , Stefanie Brüninghoff , Dimitri Dini , Dominik Eisert , Christoph Eichler
发明人： Alfred Lell , Sönke Tautz , Uwe Strauss , Martin Rudolf Behringer , Stefanie Brüninghoff , Dimitri Dini , Dominik Eisert , Christoph Eichler
CPC分类号： H04N9/3161 , H01S5/005 , H01S5/02292 , H01S5/4093 , H04N9/3129
摘要： In at least one embodiment of the light source (1), the latter includes at least one semiconductor laser (2), which is designed to emit a primary radiation (P) of a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the light source (1) comprises at least one conversion medium (3), which is arranged downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) of a different, greater wavelength than the primary radiation (P). The radiation (R) emitted by the light source (1) here displays an optical coherence length which amounts to at most 50 μm.
摘要翻译： 在光源（1）的至少一个实施例中，后者包括至少一个半导体激光器（2），其设计成发射波长在360nm和485nm之间的初级辐射（P）。 此外，光源（1）包括至少一个转换介质（3），其设置在半导体激光器（2）的下游，并被设计成将至少一部分初级辐射（P）转换成次级辐射（S） 具有与初级辐射（P）不同的更大的波长。 由光源（1）发射的辐射（R）在这里显示出至多50μm的光学相干长度。
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公开(公告)号：US08093607B2
公开(公告)日：2012-01-10
申请号：US12298703
申请日：2007-04-25
IPC分类号： H01L33/42
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译： 一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。 组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。 有用层具有远离载体基底的分离区域。
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公开(公告)号：US07885306B2
公开(公告)日：2011-02-08
申请号：US11824877
申请日：2007-07-02
IPC分类号： H01S5/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
摘要翻译： 指定的是边缘发射半导体激光器芯片，其包括载体衬底（1），促进载体衬底（1）和边缘发射半导体激光器芯片的部件结构（50）之间的粘合的中间层（2） 结构（50）包括用于产生辐射的活动区（5）。
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公开(公告)号：US08711893B2
公开(公告)日：2014-04-29
申请号：US12920312
申请日：2009-01-28
IPC分类号： H01S5/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01S5/0217 , H01S5/0424 , H01S5/12 , H01S5/18308 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising Al1-xGaxN, where 0
摘要翻译： 光电子部件包含基于具有活性层的氮化物化合物半导体和包含Al1-xGaxN的外延生长衬底的外延层序列，其中0
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10.发明授权公开(公告)号：US08565278B2
公开(公告)日：2013-10-22
申请号：US12863673
申请日：2009-03-09
申请人： Christoph Eichler , Uwe Strauss
发明人： Christoph Eichler , Uwe Strauss
IPC分类号： H01S5/00
CPC分类号： H01L22/10 , H01L22/12 , H01S5/22 , H01S2301/173
摘要： A semiconductor component includes a semiconductor body with a semiconductor layer sequence having an active region, provided for generating coherent radiation, and an indicator layer. With respect to an interface which delimits the semiconductor body in regions in a vertical direction, on that side of said interface which is remote from the active region, the semiconductor body has a web-like region extending in a vertical direction between the interface and a surface of the semiconductor body. The indicator layer has a material composition that differs from that of the material of the web-like region which adjoins the indicator layer. A distance between the indicator layer and the surface is at most of the same magnitude as a distance between the interface and the surface.
摘要翻译： 半导体部件包括具有半导体层序列的半导体本体，其具有用于产生相干辐射的有源区域和指示层。 关于在垂直方向的区域中限定半导体本体的界面，在远离有源区的所述界面的该侧，半导体本体具有在界面和a之间沿垂直方向延伸的网状区域 半导体体的表面。 指示剂层具有与邻接指示剂层的网状区域的材料组成不同的材料组成。 指示剂层和表面之间的距离与界面和表面之间的距离最大相同的大小。
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