公开(公告)号：US06876042B1

公开(公告)日：2005-04-05

申请号：US10653105

申请日：2003-09-03

Applicant: Bin Yu ,  Shibly S. Ahmed ,  Haihong Wang

Inventor： Bin Yu ,  Shibly S. Ahmed ,  Haihong Wang

IPC: H01L21/336 ,  H01L29/786 ,  H01L29/76 ,  H01L27/01

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: A FinFET includes a fin formed on an insulating layer and a first gate material layer formed proximate to sides of the fin. The FinFET further includes a protective layer formed above the first gate material layer and the fin, and a second gate material layer formed above the protective layer and the fin. The second gate material layer may be formed into a gate for the fin that may be biased independently of gate(s) formed from the first gate material layer, thus providing additional design flexibility in controlling the potential in the fin during on/off switching of the FinFET.

Abstract translation: FinFET包括形成在绝缘层上的鳍和靠近鳍的侧面形成的第一栅极材料层。 FinFET还包括形成在第一栅极材料层和鳍上方的保护层，以及形成在保护层和鳍上方的第二栅极材料层。 第二栅极材料层可以形成为可以独立于由第一栅极材料层形成的栅极偏置的鳍的栅极，从而在控制鳍的电位的开/关切换期间提供额外的设计灵活性 FinFET。

公开(公告)号：US06855607B2

公开(公告)日：2005-02-15

申请号：US10459495

申请日：2003-06-12

Applicant: Krishnashree Achuthan ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Krishnashree Achuthan ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/785 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/6681 ,  Y10S438/959

Abstract: A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” planarization and then a “fine” planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.

公开(公告)号：US06787439B2

公开(公告)日：2004-09-07

申请号：US10290276

申请日：2002-11-08

Applicant: Shibly S. Ahmed ,  Cyrus E. Tabery ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Cyrus E. Tabery ,  Haihong Wang ,  Bin Yu

IPC: H01L213205

CPC classification number: H01L29/42384 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7853

Abstract: A method of manufacturing a semiconductor device may include forming a fin structure on an insulator. The fin structure may include side surfaces and a top surface. The method may also include depositing a gate material over the fin structure and planarizing the deposited gate material. An antireflective coating may be deposited on the planarized gate material, and a gate structure may be formed out of the planarized gate material using the antireflective coating.

Abstract translation: 制造半导体器件的方法可以包括在绝缘体上形成翅片结构。 翅片结构可以包括侧表面和顶表面。 该方法还可以包括在鳍结构上沉积栅极材料并平坦化沉积的栅极材料。 可以在平坦化的栅极材料上沉积抗反射涂层，并且可以使用抗反射涂层从平坦化栅极材料形成栅极结构。

公开(公告)号：US06764884B1

公开(公告)日：2004-07-20

申请号：US10405342

申请日：2003-04-03

Applicant: Bin Yu ,  Haihong Wang

Inventor： Bin Yu ,  Haihong Wang

IPC: H01L2184

CPC classification number: H01L29/785 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66818

Abstract: A method of manufacturing a FinFET device includes forming a fin structure on an insulating layer. The fin structure includes a conductive fin. The method also includes forming source/drain regions and forming a dummy gate over the fin. The dummy gate may be removed and the width of the fin in the channel region may be reduced. The method further includes depositing a gate material to replace the removed dummy gate.

Abstract translation: 制造FinFET器件的方法包括在绝缘层上形成翅片结构。 翅片结构包括导电翅片。 该方法还包括形成源极/漏极区域并在鳍片上形成虚拟栅极。 可以去除伪栅极，并且可以减小沟道区域中的鳍的宽度。 该方法还包括沉积栅极材料以取代去除的虚拟栅极。

公开(公告)号：US06686231B1

公开(公告)日：2004-02-03

申请号：US10310777

申请日：2002-12-06

Applicant: Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L2100

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device may include forming a fin structure on an insulator and forming a gate structure over a channel portion of the fin structure. The method may also include forming a sacrificial oxide layer around the gate structure and removing the gate structure to define a gate recess within the sacrificial oxide layer. A metal gate may be formed in the gate recess, and the sacrificial oxide layer may be removed.

Abstract translation: 制造半导体器件的方法可以包括在绝缘体上形成翅片结构，并在翅片结构的沟道部分上形成栅极结构。 该方法还可以包括在栅极结构周围形成牺牲氧化物层并去除栅极结构以在牺牲氧化物层内限定栅极凹槽。 可以在栅极凹部中形成金属栅极，并且可以去除牺牲氧化物层。

公开(公告)号：US06660578B1

公开(公告)日：2003-12-09

申请号：US10118274

申请日：2002-04-08

Applicant: Olov Karlsson ,  Qi Xiang ,  HaiHong Wang ,  Bin Yu ,  Zoran Krivokapic

Inventor： Olov Karlsson ,  Qi Xiang ,  HaiHong Wang ,  Bin Yu ,  Zoran Krivokapic

IPC: H01L218238

CPC classification number: H01L27/1203 ,  H01L21/84

Abstract: A semiconductor device, a semiconductor wafer and a method of forming a semiconductor wafer where a barrier layer is used to inhibit P-type ion-penetration into a dielectric layer made from a high-K material.

Abstract translation: 半导体器件，半导体晶片和形成半导体晶片的方法，其中阻挡层用于抑制由高K材料制成的电介质层中的P型离子渗透。

公开(公告)号：US20150286441A1

公开(公告)日：2015-10-08

申请号：US14746582

申请日：2015-06-22

Applicant: Aswani Kumar Raveendran Nair ,  Sergiy Pereshyvaylo ,  Bin Yu ,  Sudheendra Vasudeva Murthy

Inventor： Aswani Kumar Raveendran Nair ,  Sergiy Pereshyvaylo ,  Bin Yu ,  Sudheendra Vasudeva Murthy

IPC: G06F3/06

CPC classification number: H04L41/0659 ,  G06F11/006 ,  G06F11/0709 ,  G06F11/0727 ,  G06F11/0793 ,  G06F11/1423 ,  G06F17/30194 ,  H04L67/06 ,  H04L67/1097

Abstract: A method and a system to provide daisy chain distribution in data centers are provided. A node identification module identifies three or more data nodes of a plurality of data nodes. The identification of three or more data nodes indicates that the respective data nodes are to receive a copy of a data file. A connection creation module to, using one or more processors, create communication connections between the three or more data nodes. The communication connections form a daisy chain beginning at a seeder data node of the three or more data nodes and ending at a terminal data node of the three or more data nodes.

Abstract translation: 提供了一种在数据中心提供菊花链分发的方法和系统。 节点识别模块识别多个数据节点中的三个或多个数据节点。 三个或更多个数据节点的标识指示相应的数据节点要接收数据文件的副本。 连接创建模块，用于使用一个或多个处理器在三个或更多个数据节点之间建立通信连接。 通信连接形成从三个或更多个数据节点的播种器数据节点开始并且结束于三个或更多个数据节点的终端数据节点的菊花链。

公开(公告)号：US09143297B2

公开(公告)日：2015-09-22

申请号：US13977907

申请日：2011-07-21

Applicant: Chunli Liang ,  Bo Dai ,  Bin Yu ,  Weiwei Yang ,  Yuqiang Zhang

Inventor： Chunli Liang ,  Bo Dai ,  Bin Yu ,  Weiwei Yang ,  Yuqiang Zhang

IPC: H04W4/00 ,  H04L5/00

CPC classification number: H04L5/0048 ,  H04L5/0053

Abstract: The present disclosure discloses a method and a device for transmitting data. The method includes: a UE determining, according to a preset rule, whether to transmit PUCCH and/or PUSCH and/or an SRS or not on a last symbol of a current subframe; the UE determining the PUCCH and/or the PUSCH to be transmitted on the current subframe according to availability of the last symbol of the current subframe for transmitting the PUCCH and/or the PUSCH; and the UE transmitting the PUCCH and/or the PUSCH on the current subframe and/or transmitting the SRS on the last symbol of the current subframe. In virtue of the present disclosure, it can be realized that a plurality of types of physical uplink signals/channels are simultaneously transmitted.

Abstract translation: 本公开公开了一种用于发送数据的方法和装置。 该方法包括：UE根据预设规则确定是否在当前子帧的最后一个符号上发送PUCCH和/或PUSCH和/或SRS; UE根据用于发送PUCCH和/或PUSCH的当前子帧的最后一个符号的可用性来确定要在当前子帧上发送的PUCCH和/或PUSCH; 并且UE在当前子帧上发送PUCCH和/或PUSCH，和/或在当前子帧的最后一个符号上发送SRS。 凭借本公开，可以实现同时发送多种类型的物理上行链路信号/信道。

公开(公告)号：US20140369290A1

公开(公告)日：2014-12-18

申请号：US14369403

申请日：2012-03-09

Applicant: Weiwei Yang ,  Bo Dai ,  Chunli Liang ,  Bin Yu ,  Shuqiang Xia

Inventor： Weiwei Yang ,  Bo Dai ,  Chunli Liang ,  Bin Yu ,  Shuqiang Xia

IPC: H04L1/18 ,  H04W72/04 ,  H04W72/02

CPC classification number: H04L1/1861 ,  H04L1/0073 ,  H04L5/001 ,  H04L5/0055 ,  H04L5/1469 ,  H04W72/02 ,  H04W72/0413

Abstract: Provided are a method and apparatus for sending Hybrid Automatic Repeat Request Acknowledge (HARQ-ACK) information. The method includes: when a terminal employs a physical uplink control channel (PUCCH) format 3 to transmit HARQ-ACK information and the HARQ-ACK information is transmitted over a uplink physical shared channel (PUSCH), determining the number of downlink subframes for serving cells to feed back the HARQ-ACK information; determining the number of encoded modulated symbols required for sending the HARQ-ACK information according to the determined number of downlink subframes; and mapping the HARQ-ACK information to be sent to the PUSCH of a specified uplink subframe according to the number of encoded modulated symbols and sending the HARQ-ACK information. The technical solutions provided by the disclosure are applied to improve the performance of the HARQ-ACK information, and thus improve the data performance.

Abstract translation: 提供了一种用于发送混合自动重传请求确认（HARQ-ACK）信息的方法和装置。 该方法包括：当终端采用物理上行链路控制信道（PUCCH）格式3来发送HARQ-ACK信息，并且通过上行链路物理共享信道（PUSCH）发送HARQ-ACK信息时，确定用于服务的下行链路子帧的数量 小区来反馈HARQ-ACK信息; 根据确定的下行链路子帧的数量确定发送HARQ-ACK信息所需的编码调制符号的数量; 以及根据编码的调制符号的数量映射要发送到指定上行链路子帧的PUSCH的HARQ-ACK信息，并发送HARQ-ACK信息。 应用本公开提供的技术方案来改进HARQ-ACK信息的性能，从而提高数据性能。

公开(公告)号：US20140177491A1

公开(公告)日：2014-06-26

申请号：US14236164

申请日：2011-12-21

Applicant: Peng Hao ,  Bo Dai ,  Bin Yu

Inventor： Peng Hao ,  Bo Dai ,  Bin Yu

IPC: H04W56/00 ,  H04W72/14 ,  H04W72/04

CPC classification number: H04W56/001 ,  H04L1/1854 ,  H04L1/1864 ,  H04W72/0446 ,  H04W72/1278 ,  H04W72/14

Abstract: A base station, a terminal, a system and methods for performing data transmission in a Time Division Duplex (TDD) system are disclosed. One of the methods includes: the base station sending an uplink scheduling grant signaling to the terminal on a carrier m, and after receiving uplink data sent by the terminal through a Physical Uplink Shared Channel (PUSCH) on a carrier n, the base station sending an ACK/NACK feedback signaling corresponding to the PUSCH to the terminal on the carrier m; wherein, m≠n; a timing relationship between a subframe by which the base station sends the uplink scheduling grant signaling and/or the ACK/NACK feedback signaling and a subframe where the PUSCH is located is identical with a Hybrid Automatic Repeat Request (HARQ) timing relationship corresponding to an uplink/downlink configuration of the carrier m or the carrier n.

Abstract translation: 公开了一种在时分双工（TDD）系统中执行数据传输的基站，终端，系统和方法。 方法之一包括：基站向载波m上的终端发送上行调度授权信令，在通过载波n上的物理上行链路共享信道（PUSCH）接收到终端发送的上行数据之后，基站发送 与载波m上的终端对应的PUSCH的ACK / NACK反馈信令; 其中，m≠n; 基站发送上行链路调度授权信令的子帧与/或ACK / NACK反馈信令的子帧与PUSCH所在的子帧之间的定时关系与对应于上行链路调度许可信令的混合自动重复请求（HARQ）定时关系相同 载波m或载波n的上行链路/下行链路配置。