公开(公告)号：US20060108580A1

公开(公告)日：2006-05-25

申请号：US11228119

申请日：2005-09-16

申请人： Mikio Yoshida ,  Kenji Mori ,  Ichiro Yamamoto

发明人： Mikio Yoshida ,  Kenji Mori ,  Ichiro Yamamoto

IPC分类号： H01L29/08

CPC分类号： H01L51/5271 ,  H01L51/5036 ,  H01L51/5231 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/558

摘要： Provided is an organic EL device, including: a transparent substrate having a front surface and a rear surface; a first electrode layer, an organic layer including a light emitting layer and a second electrode layer that are formed in order on the front surface of the transparent substrate; and a reflective layer formed on the second electrode layer on a side opposite to the organic layer and having light reflectivity for light incident from the second electrode layer, the first electrode layer and the second electrode layer being formed of a transparent material, light being extracted from the rear surface of the transparent substrate.

摘要翻译： 提供一种有机EL器件，包括：具有前表面和后表面的透明衬底; 第一电极层，在透明基板的前表面上依次形成包括发光层和第二电极层的有机层; 以及反射层，形成在与所述有机层相反的一侧的所述第二电极层上，并且对于从所述第二电极层入射的光具有光反射率，所述第一电极层和所述第二电极层由透明材料形成，所述光被提取 从透明基板的后表面。

公开(公告)号：US20060045969A1

公开(公告)日：2006-03-02

申请号：US11208787

申请日：2005-08-23

申请人： Ichiro Yamamoto ,  Koji Watanabe

发明人： Ichiro Yamamoto ,  Koji Watanabe

IPC分类号： C23C16/00

CPC分类号： C23C16/56 ,  C23C16/401 ,  C23C16/44

摘要： Variation in the thickness of the deposited films depending on number of the processed product wafers in the deposition process employing a batch type CVD apparatus is inhibited to provide a manufacture of the film having a predetermined thickness with an improved reproducibility. The deposition apparatus 100 comprises a deposition reactor 101 that is capable of containing product wafers 107 and dummy wafers 109, boat 105, on which product wafer 107 or the dummy wafer 109 is mounted, and a heater 111 provided outside of the deposition reactor 101 along a reactor wall 103. Further, the deposition apparatus 100 comprises a gas supplying system including a high-k source material supplying line 113 and SiO2 source material supplying line 115, and a controller 121 that provides a control to the supply of a gas from the gas supplying system to the deposition reactor 101.

摘要翻译： 根据使用间歇型CVD装置的沉积工艺中的加工产品晶片的数量，沉积膜厚度的变化被抑制，从而提供具有预定厚度的膜，并且具有改进的再现性。 沉积设备100包括能够容纳产品晶片107和虚设晶片109，安装有产品晶片107或虚设晶片109的船105的沉积反应器101和沿着沉积反应器101的外部设置的加热器111 反应器壁103。 此外，沉积设备100包括包括高k源材料供应管线113和SiO 2源材料供应管线115的气体供应系统，以及控制器121，其提供对 从气体供给系统到沉积反应器101的气体。

公开(公告)号：US20050212031A1

公开(公告)日：2005-09-29

申请号：US11120995

申请日：2005-05-04

申请人： Ichiro Yamamoto

发明人： Ichiro Yamamoto

IPC分类号： C23C16/30 ,  H01L21/02 ,  H01L21/20 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/40 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31641 ,  H01L27/10811 ,  H01L27/10814 ,  H01L27/10852

摘要： A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦x≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

摘要翻译： 提供了一种半导体器件，其具有由锆合金制成的电容器绝缘膜，其是通过具有包含无定形氧化铝并且其组成为Al x Zr（1- （0.05 <= x <= 0.3），因此能够在形成MIM（金属绝缘体金属）结构的电容器的过程中防止介电击穿 电容绝缘膜，而用作电容器绝缘膜的金属氧化物膜的相对介电常数保持较高。

公开(公告)号：US06903398B2

公开(公告)日：2005-06-07

申请号：US10746341

申请日：2003-12-29

申请人： Ichiro Yamamoto

发明人： Ichiro Yamamoto

IPC分类号： C23C16/30 ,  H01L21/02 ,  H01L21/20 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/40 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31641 ,  H01L27/10811 ,  H01L27/10814 ,  H01L27/10852

摘要： A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY(0.05≦x≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

摘要翻译： 提供了一种半导体器件，其具有由锆合金制成的电容器绝缘膜，其是通过具有包含无定形氧化铝并且其组成为Al x Zr（1- （0.05 <= x <= 0.3），因此能够在形成MIM（金属绝缘体金属）结构的电容器的过程中防止介电击穿 电容绝缘膜，而用作电容器绝缘膜的金属氧化物膜的相对介电常数保持较高。

公开(公告)号：US06674704B2

公开(公告)日：2004-01-06

申请号：US09734733

申请日：2000-12-13

申请人： Ichiro Yamamoto ,  Motoji Oono

发明人： Ichiro Yamamoto ,  Motoji Oono

IPC分类号： G11B700

CPC分类号： G11B19/2009

摘要： An apparatus for manufacturing a disc drive comprises an adjusting element, put in contact with a disc table engaged with a rotational shaft of a drive motor via an engaging portion, for varying an inclination of the disc table which is swingable with a point of support at the engaging portion, a non-contact displacement measuring unit for detecting, the inclination of the disc table varied by the adjusting element, control unit for receiving a detection signal from the non-contact displacement measuring unit and stopping rotation of the drive motor when the inclination of the disc table has decreased to a predetermined value or less, and an adhesive supply unit for fixing the disc table to the rotational shaft of the drive motor which has been stopped by the control unit.

摘要翻译： 用于制造盘驱动器的装置包括调节元件，其经由接合部与与驱动电动机的旋转轴接合的盘台接触，用于改变能够以支撑点摆动的盘台的倾斜度 所述接合部分，用于检测由所述调节元件变化的所述盘台的倾斜度的非接触位移测量单元，用于从所述非接触位移测量单元接收检测信号的控制单元，以及当所述驱动电机的旋转停止时 光盘台的倾斜度已经减小到预定值或更小，以及用于将盘台固定到由控制单元停止的驱动马达的旋转轴上的粘合剂供应单元。

公开(公告)号：US06642257B2

公开(公告)日：2003-11-04

申请号：US09969644

申请日：2001-10-04

申请人： Ichiro Yamamoto ,  Manabu Itoh ,  Fumiaki Yamasaki ,  Yasushige Akada ,  Yutaka Miyazaki ,  Shinichi Ogawa

发明人： Ichiro Yamamoto ,  Manabu Itoh ,  Fumiaki Yamasaki ,  Yasushige Akada ,  Yutaka Miyazaki ,  Shinichi Ogawa

IPC分类号： A61K3144

CPC分类号： C07D405/06 ,  C07D211/48 ,  C07D407/06 ,  C07D409/06

摘要： The present invention relates to a compound represented by Formula (I) below: (wherein A represents, for example, phenyl group substituted by R1 and R2, or an unsubstituted furyl group or an unsubstitued thienyl group; R1 represents, for example, hydrogen atom, fluorine atom, chlorine atom, trifluoromethyl group, nitro group, cyano group or methyl group while R2 represents, for example, hydrogen atom; R3 represents, for example, hydrogen atom or methyl group; R4 represents, for example, hydrogen atom or methyl group; R5 represents ethoxy group or isopropoxy group; X represents group: —CH(OH)— or methylene group; and Z represents, for example, a single bond or methylene group unsubstituted or substituted by hydroxyl group), and its salts, and medicinal compositions containing, as their active ingredient, the above compound or its salts. The compound of this invention, which is orally applicable, is highly effective for treating neuroapthic pain while presenting with fewer side-effects than do the conventional analgesics.

摘要翻译： 本发明涉及由下式（I）表示的化合物：其中A表示例如被R 1和R 2取代的苯基或未取代的呋喃基或未取代的噻吩基; 1表示例如氢原子，氟原子，氯原子，三氟甲基，硝基，氰基或甲基，而R 2表示例如氢原子; R 3表示例如氢 原子或甲基; R 4表示例如氢原子或甲基; R 5表示乙氧基或异丙氧基; X表示基团：-CH（OH） - 或亚甲基; Z表示对于 例如，未取代或被羟基取代的单键或亚甲基）及其盐，以及含有作为其活性成分的上述化合物或其盐的药物组合物。 口服适用的本发明化合物对于治疗神经痛与非常有效，同时具有比常规止痛剂更少的副作用。

公开(公告)号：US06602722B2

公开(公告)日：2003-08-05

申请号：US10135620

申请日：2002-04-30

申请人： Ichiro Yamamoto ,  Toshihiro Iizuka ,  Yoshitake Kato

发明人： Ichiro Yamamoto ,  Toshihiro Iizuka ,  Yoshitake Kato

IPC分类号： H01G706

CPC分类号： H01L21/02197 ,  C23C16/409 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/02356 ,  H01L21/31691 ,  H01L27/1085 ,  H01L28/55

摘要： A barium strontium titanate is the ferroelectric substance with the perovskite structure available for a capacitor as a dielectric layer, and is crystallized through a high temperature heat treatment, in which the barium strontium titanate is further subjected to a low temperature heat treatment under the crystallizing temperature of the barium strontium titanate for eliminating impurities such as carbon and hydrogen therefrom so that the leakage current is drastically reduced.

公开(公告)号：US06534815B2

公开(公告)日：2003-03-18

申请号：US09882253

申请日：2001-06-18

申请人： Ichiro Yamamoto

发明人： Ichiro Yamamoto

IPC分类号： H01L27108

CPC分类号： H01L21/28525 ,  H01L21/7687 ,  H01L21/76886 ,  H01L27/1085 ,  H01L28/84

摘要： A semiconductor memory device includes an interlayer insulating film, a contact film, a crystallization preventing film and a conductive film. The interlayer insulating film is formed on a semiconductor substrate to cover a source/drain region of a MOS transistor. The source/drain region is formed in the semiconductor substrate. The contact film with a first impurity ion concentration contacts the source/drain region. The contact film is formed to partially embed a contact hole along side wall of the contact hole formed to pass through the interlayer insulating film to the source/drain region. The crystallization preventing film with a second impurity ion concentration is formed on the contact film to completely embed the contact hole. The first impurity ion concentration is higher than the second impurity ion concentration. The conductive film with a third impurity ion concentration is formed on a surface of the crystallization preventing film above the interlayer insulating film to have an uneven portion.

摘要翻译： 半导体存储器件包括层间绝缘膜，接触膜，防结晶膜和导电膜。 层间绝缘膜形成在半导体衬底上以覆盖MOS晶体管的源极/漏极区域。 源极/漏极区域形成在半导体衬底中。 具有第一杂质离子浓度的接触膜接触源/漏区。 接触膜形成为沿着形成为穿过层间绝缘膜的接触孔的侧壁部分地嵌入接触孔到源极/漏极区域。 在接触膜上形成具有第二杂质离子浓度的结晶防止膜，以完全嵌入接触孔。 第一杂质离子浓度高于第二杂质离子浓度。 具有第三杂质离子浓度的导电膜形成在层间绝缘膜上方的结晶防止膜的表面上，具有不均匀部分。

公开(公告)号：US06232178B1

公开(公告)日：2001-05-15

申请号：US09439251

申请日：1999-11-12

申请人： Ichiro Yamamoto

发明人： Ichiro Yamamoto

IPC分类号： H01L218242

CPC分类号： H01L28/84 ,  H01L27/10852 ,  Y10S438/964

摘要： A method for forming a capacitive element comprising the steps of: forming hemispherical grains (HSGs) by treating an amorphous silicon film overlying a semiconductor substrate by means of a HSG treatment; conducting an oxidation blocking treatment on the surface of the HSGs; and introducing an impurity on the HSGs to form the capacitive element. The oxidation blocking treatment is preferably a hydrogen termination treatment which effectively prevents formation of a spontaneous oxidation film which may reduce a size of the HSGs to decrease a mechanical strength thereof.

摘要翻译： 一种用于形成电容元件的方法，包括以下步骤：通过用HSG处理处理半导体衬底上的非晶硅膜来形成半球形晶粒（HSG）; 在HSG表面进行氧化阻断处理; 并在HSG上引入杂质以形成电容元件。 氧化阻断处理优选是氢终止处理，其有效地防止自发氧化膜的形成，其可以减小HSG的尺寸以降低其机械强度。

公开(公告)号：US4522906A

公开(公告)日：1985-06-11

申请号：US599050

申请日：1984-04-11

申请人： Yasuzi Asao ,  Ichiro Yamamoto

发明人： Yasuzi Asao ,  Ichiro Yamamoto

IPC分类号： G03G13/28 ,  B41N1/14 ,  G03G5/10 ,  G03G5/14 ,  G03G5/00 ,  G03G5/08

CPC分类号： G03G5/10 ,  B41N1/14 ,  G03G5/144

摘要： An electrophotographic plate-making material comprising a paper support and a photoconductive layer is described. This paper support is prepared by providing a polyolefin resin layer on both surfaces of a paper substrate by molten extrusion lamination, and is characterized in that the volume electric resistance is not more than 10.sup.10 .OMEGA. and the polyolefin resin layer contains electrically conductive carbon black having a loss on drying, as determined under the conditions of 110.degree. C. and 2 hours, of not more than 1.0%. Using this plate-making material, there can be produced a lithographic printing plate having good dimensional stability and long press life.

摘要翻译： 描述了包括纸支架和光电导层的电子照相制版材料。 通过熔融挤出层叠在纸基材的两面上设置聚烯烃树脂层，其特征在于体积电阻不大于1010ΩEGA，聚烯烃树脂层含有具有 在110℃和2小时的条件下测定的干燥失重不大于1.0％。 使用这种制版材料，可以制造具有良好的尺寸稳定性和长的印刷寿命的平版印刷版。