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公开(公告)号：US20190106808A1
公开(公告)日：2019-04-11
申请号：US16160158
申请日：2018-10-15
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm=2, Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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72.发明授权公开(公告)号：US10106913B2
公开(公告)日：2018-10-23
申请号：US15410915
申请日：2017-01-20
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
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公开(公告)号：US20140231725A1
公开(公告)日：2014-08-21
申请号：US14225999
申请日：2014-03-26
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
IPC分类号： H01L29/20
CPC分类号： H01L29/207 , C30B23/00 , C30B29/403 , H01L21/0254 , H01L21/02579 , H01L21/2258 , H01L29/2003 , H01L33/325
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
摘要翻译： 具有高导电性和迁移率的掺杂AlN晶体和/或AlGaN外延层的制备通过例如形成包括多个杂质物质的混合晶体并电激活至少一部分晶体来实现。
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公开(公告)号：US08222650B2
公开(公告)日：2012-07-17
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： H01L27/15
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US20100314551A1
公开(公告)日：2010-12-16
申请号：US12813293
申请日：2010-06-10
IPC分类号： C02F1/32
CPC分类号： C02F1/32 , C02F2201/3222 , C02F2201/326 , C02F2209/005 , C02F2303/04
摘要： A UV source is regulated according to one or more purification parameters to produce a desired germicidal effect in a liquid while minimizing wasted power.
摘要翻译： 根据一个或多个净化参数调节UV源以在液体中产生期望的杀菌效果，同时最小化浪费的功率。
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公开(公告)号：US20080182092A1
公开(公告)日：2008-07-31
申请号：US12015957
申请日：2008-01-17
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density≦100 cm−2 Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有实际平面缺陷密度<= 100cm 2的氮化铝（AlN）的单体单晶生长单晶氮化铝的方法包括熔融铝箔以均匀地湿一层基底 铝，形成AlN种子保持器的一部分的基底，用于AlN种子用于AlN生长。 保持器可以基本上由基本上不可渗透的背板组成。
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77.发明授权公开(公告)号：US06770135B2
公开(公告)日：2004-08-03
申请号：US10324998
申请日：2002-12-20
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
IPC分类号： C30B2502
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , Y10T117/10
摘要： A method and apparatus for producing bulk single crystals of AlN includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline AlN at the nucleation site.
摘要翻译： 用于制造AlN的单体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。 该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位点，并且提供用于相对于晶体生长封壳中的其它位置冷却成核位置。 然后沉积Al和N 2蒸气以在成核位点生长单晶AlN。
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公开(公告)号：US11828002B2
公开(公告)日：2023-11-28
申请号：US17181138
申请日：2021-02-22
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： C30B23/00 , C30B29/40 , C30B23/06 , H01L33/00 , C01B21/072 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
CPC分类号： C30B29/403 , C01B21/072 , C30B23/002 , C30B23/066 , H01L33/0075 , H01L21/02389 , H01S5/0217 , H01S5/3013 , H01S5/34333
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号：US11225731B2
公开(公告)日：2022-01-18
申请号：US15427619
申请日：2017-02-08
IPC分类号： C30B33/00 , C30B33/02 , C30B23/00 , C30B29/40 , B28D5/00 , C30B25/02 , C30B23/02 , C30B25/08 , C30B25/10 , H01L21/02 , H01L21/306 , C23C16/34 , C30B25/18
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
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公开(公告)号：US11124892B2
公开(公告)日：2021-09-21
申请号：US16881148
申请日：2020-05-22
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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