公开(公告)号：US07527985B2

公开(公告)日：2009-05-05

申请号：US11552327

申请日：2006-10-24

申请人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh

发明人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh

IPC分类号： H01L21/8239

CPC分类号： H01L45/04 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

摘要： A method for manufacturing a memory device comprises patterning a dielectric layer and a conductive layer to align near the center of the top surface of a first contact drain plug and near the center of the top surface of a second contact drain plug. A first electrode is formed on the right sidewalls of the patterned dielectric layer and the conductive layer. A sidewall insulating member has a first sidewall surface and a second sidewall surface where the first sidewall surface of the sidewall insulating member is in contact with a sidewall of the first electrode. A second electrode is formed by depositing an electrode layer overlying the top surface of the sidewall insulating member and the second sidewall of the insulating member and isotropically etching the electrode layer to form the second electrode.

摘要翻译： 一种用于制造存储器件的方法包括使电介质层和导电层图案化以在第一接触排放塞的顶表面的中心附近并且靠近第二接触排放塞的顶表面的中心。 第一电极形成在图案化电介质层和导电层的右侧壁上。 侧壁绝缘构件具有第一侧壁表面和第二侧壁表面，其中侧壁绝缘构件的第一侧壁表面与第一电极的侧壁接触。 第二电极通过沉积覆盖侧壁绝缘构件的顶表面和绝缘构件的第二侧壁的电极层而形成，并且各向同性地蚀刻电极层以形成第二电极。

公开(公告)号：US07524722B2

公开(公告)日：2009-04-28

申请号：US11695780

申请日：2007-04-03

申请人： Ming-Daou Lee ,  Chia-Hua Ho ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

发明人： Ming-Daou Lee ,  Chia-Hua Ho ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

IPC分类号： H01L21/8234 ,  H01L21/8244

CPC分类号： G11C11/54 ,  G11C11/14 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/32 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633 ,  Y10S438/972

摘要： A resistance type memory device is provided. The resistance type memory device is disposed on a substrate and includes a tungsten electrode, an upper electrode, and a tungsten oxide layer. The upper electrode is disposed on the tungsten electrode. The tungsten oxide layer is sandwiched between the tungsten electrode and the upper electrode.

摘要翻译： 提供电阻型存储器件。 电阻型存储装置设置在基板上，并且包括钨电极，上电极和氧化钨层。 上电极设置在钨电极上。 氧化钨层夹在钨电极和上电极之间。

公开(公告)号：US20090020740A1

公开(公告)日：2009-01-22

申请号：US12176183

申请日：2008-07-18

申请人： Wei-Chih CHIEN ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

发明人： Wei-Chih CHIEN ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

IPC分类号： H01L47/00 ,  H01L21/00

CPC分类号： H01L45/04 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1633 ,  Y10S438/90

摘要： A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device comprises first and second electrodes with a memory element and a buffer layer, having a thickness of less than 50 Å, located between and electrically coupled to them. The memory comprises one or more metal oxygen compounds. An example of a method of fabricating a memory device includes forming first and second electrodes. A memory, located between and electrically coupled to the first and the second electrodes, is formed; the memory comprises one or more metal oxygen compounds and the buffer layer comprises at least one of an oxide and a nitride.

摘要翻译： 存储器件包括具有存储元件的第一和第二电极以及位于它们之间并与之电耦合的缓冲层。 记忆元件包括一种或多种金属氧化合物。 缓冲层包括氧化物和氮化物中的至少一种。 另一个存储器件包括具有存储元件和缓冲层的第一和第二电极，其厚度小于50，位于它们之间并与之电耦合。 记忆体包括一种或多种金属氧化合物。 制造存储器件的方法的一个例子包括形成第一和第二电极。 形成位于第一和第二电极之间并电耦合到第一和第二电极的存储器; 存储器包括一种或多种金属氧化合物，并且缓冲层包括氧化物和氮化物中的至少一种。

公开(公告)号：US20080096341A1

公开(公告)日：2008-04-24

申请号：US11552327

申请日：2006-10-24

申请人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh

发明人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh

IPC分类号： H01L21/8238 ,  H01L21/20 ,  H01L21/00 ,  H01L21/8244

CPC分类号： H01L45/04 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

摘要： A method for manufacturing a memory device comprises patterning a dielectric layer and a conductive layer to align near the center of the top surface of a first contact drain plug and near the center of the top surface of a second contact drain plug. A first electrode is formed on the right sidewalls of the patterned dielectric layer and the conductive layer. A sidewall insulating member has a first sidewall surface and a second sidewall surface where the first sidewall surface of the sidewall insulating member is in contact with a sidewall of the first electrode. A second electrode is formed by depositing an electrode layer overlying the top surface of the sidewall insulating member and the second sidewall of the insulating member and isotropically etching the electrode layer to form the second electrode.

摘要翻译： 一种用于制造存储器件的方法包括使电介质层和导电层图案化以在第一接触排放塞的顶表面的中心附近并且靠近第二接触排放塞的顶表面的中心。 第一电极形成在图案化电介质层和导电层的右侧壁上。 侧壁绝缘构件具有第一侧壁表面和第二侧壁表面，其中侧壁绝缘构件的第一侧壁表面与第一电极的侧壁接触。 第二电极通过沉积覆盖侧壁绝缘构件的顶表面和绝缘构件的第二侧壁的电极层而形成，并且各向同性地蚀刻电极层以形成第二电极。

公开(公告)号：US20080094875A1

公开(公告)日：2008-04-24

申请号：US11552464

申请日：2006-10-24

申请人： ChiaHua Ho ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

发明人： ChiaHua Ho ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

IPC分类号： G11C11/00

CPC分类号： G11C17/165 ,  B82Y10/00 ,  G11C11/5664 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/16 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/77

摘要： A method is described for operating a bistable resistance random access memory having two memory layer stacks that are aligned in series is disclosed. The bistable resistance random access memory comprises two memory layer stacks per memory cell, the bistable resistance random access memory operates in four logic states, a logic “00” state, a logic “01” state, a logic “10” state and a logic “11” state. The relationship between the four different logic states can be represented mathematically by the two variables n and f and a resistance R. The logic “0” state is represented by a mathematical expression (1+f)R. The logic “1” state is represented by a mathematical expression (n+f)R. The logic “2” state is represented by a mathematical expression (1+nf)R. The logic “3” state is represented by a mathematical expression n(1+f)R.

摘要翻译： 描述了一种用于操作具有串联排列的两个存储层堆叠的双稳态电阻随机存取存储器的方法。 双稳态电阻随机存取存储器包括每个存储单元的两个存储层堆栈，双稳态电阻随机存取存储器以四个逻辑状态，逻辑“00”状态，逻辑“01”状态，逻辑“10”状态和逻辑 “11”状态。 四个不同逻辑状态之间的关系可以由两个变量n和f以及电阻R在数学上表示。逻辑“0”状态由数学表达式（1 + f）R表示。 逻辑“1”状态由数学表达式（n + f）R表示。 逻辑“2”状态由数学表达式（1 + nf）R表示。 逻辑“3”状态由数学表达式n（1 + f）R表示。

公开(公告)号：US20070158633A1

公开(公告)日：2007-07-12

申请号：US11463824

申请日：2006-08-10

申请人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh

发明人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh

IPC分类号： H01L47/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/1683

摘要： A non-volatile method with a self-aligned RRAM element. The method includes a lower electrode element, generally planar in form, having an inner contact surface. At the top of the device is a upper electrode element, spaced from the lower electrode element. A containment structure extends between the upper electrode element and the lower electrode element, and this element includes a sidewall spacer element having an inner surface defining a generally funnel-shaped central cavity, terminating at a terminal edge to define a central aperture; and a spandrel element positioned between the sidewall spacer element and the lower electrode, having an inner surface defining a thermal isolation cell, the spandrel inner walls being spaced radially outward from the sidewall spacer terminal edge, such that the sidewall spacer terminal edge projects radially inward from the spandrel element inner surface. ARRAM element extends between the lower electrode element and the upper electrode, occupying at least a portion of the sidewall spacer element central cavity and projecting from the sidewall spacer terminal edge toward and making contact with the lower electrode. In this manner, the spandrel element inner surface is spaced from the RRAM element to define a thermal isolation cell adjacent the RRAM element.

摘要翻译： 具有自对准RRAM元素的非易失性方法。 该方法包括具有内部接触表面的大体平面形状的下部电极元件。 在装置的顶部是与下部电极元件间隔开的上部电极元件。 容纳结构在上电极元件和下电极元件之间延伸，并且该元件包括侧壁间隔元件，其具有限定大致漏斗形中心腔的内表面，终止于端边缘以限定中心孔; 以及位于所述侧壁间隔元件和所述下电极之间的突出元件，具有限定了热隔离单元的内表面，所述凸起内壁与所述侧壁间隔件终端边缘径向向外间隔开，使得所述侧壁间隔件末端边缘径向向内突出 从弹簧元件内表面。 ARRAM元件在下电极元件和上电极之间延伸，占据侧壁间隔元件中心空腔的至少一部分并且从侧壁间隔件终端边缘朝向和与下电极接触。 以这种方式，伞形元件内表面与RRAM元件间隔开以限定与RRAM元件相邻的热隔离单元。

公开(公告)号：US20060261402A1

公开(公告)日：2006-11-23

申请号：US11134155

申请日：2005-05-20

申请人： Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

发明人： Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

IPC分类号： H01L29/78 ,  H01L21/4763

CPC分类号： H01L27/115 ,  G11C16/0408 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/515

摘要： An air tunnel floating gate memory cell includes an air tunnel defined over a substrate. A first polysilicon layer (floating gate) is defined over the air tunnel. An oxide layer is disposed over the first polysilicon layer such that the oxide layer caps the first polysilicon layer and defines the sidewalls of the air tunnel. A second polysilicon layer, functioning as a word line, is defined over the oxide layer. A method for making an air tunnel floating gate memory cell is also disclosed. A sacrificial layer is formed over a substrate. A first polysilicon layer is formed over the sacrificial layer. An oxide layer is deposited over the first polysilicon layer such that the oxide layer caps the first polysilicon layer and defines the sidewalls of the sacrificial layer. A hot phosphoric acid (H3PO4) dip is used to etch away the sacrificial layer to form an air tunnel.

摘要翻译： 空气隧道浮动栅极存储单元包括限定在衬底上的空气通道。 在空气隧道上定义第一多晶硅层（浮栅）。 氧化物层设置在第一多晶硅层上，使得氧化物层覆盖第一多晶硅层并限定空气通道的侧壁。 用作字线的第二多晶硅层被定义在氧化物层上。 还公开了一种制造空气通道浮动栅极存储单元的方法。 在衬底上形成牺牲层。 在牺牲层上形成第一多晶硅层。 在第一多晶硅层上沉积氧化物层，使得氧化物层覆盖第一多晶硅层并限定牺牲层的侧壁。 使用热磷酸（H 3 PO 4）浸渍以蚀刻掉牺牲层以形成空气通道。

公开(公告)号：US08362615B2

公开(公告)日：2013-01-29

申请号：US11892980

申请日：2007-08-29

申请人： Erh-Kun Lai ,  Hang-Ting Lue ,  Kuang-Yeu Hsieh

发明人： Erh-Kun Lai ,  Hang-Ting Lue ,  Kuang-Yeu Hsieh

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/115 ,  H01L27/11568 ,  H01L27/11578

摘要： A memory and a manufacturing method thereof are provided. The memory includes a dielectric layer, a polysilicon layer, a first buried diffusion, a second buried diffusion, a charge storage structure and a gate. The polysilicon layer is disposed on the dielectric layer and electrically connected to at least a voltage. The first buried diffusion and the second buried diffusion are separately disposed in the surface of the polysilicon layer. The charge storage structure is disposed on the polysilicon layer and positioned between the first buried diffusion and the second buried diffusion. The gate is disposed on the charge storage structure.

公开(公告)号：US08243494B2

公开(公告)日：2012-08-14

申请号：US12235773

申请日：2008-09-23

申请人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh ,  Shih-Hung Chen

发明人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh ,  Shih-Hung Chen

IPC分类号： G11C16/02 ,  H01L29/417

CPC分类号： H01L45/06 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： A process in the manufacturing of a resistor random access memory with a confined melting area for switching a phase change in the programmable resistive memory. The process initially formed a pillar comprising a substrate body, a first conductive material overlying the substrate body, a programmable resistive memory material overlying the first conductive material, a high selective material overlying the programmable resistive memory material, and a silicon nitride material overlying the high selective material. The high selective material in the pillar is isotropically etched on both sides of the high selective material to create a void on each side of the high selective material with a reduced length. A programmable resistive memory material is deposited in a confined area previously occupied by the reduced length of the poly, and the programmable resistive memory material is deposited into an area previously occupied by the silicon nitride material.

摘要翻译： 制造具有用于切换可编程电阻存储器中的相位变化的限定熔化区域的电阻器随机存取存储器的过程。 该工艺最初形成了一个支柱，该支柱包括衬底主体，覆盖衬底主体的第一导电材料，覆盖第一导电材料的可编程电阻性存储器材料，覆盖在可编程电阻性存储器材料上的高选择性材料， 选择性材料。 柱中的高选择性材料在高选择性材料的两侧进行各向同性蚀刻，以在长度较小的高选择性材料的每侧产生空隙。 可编程电阻式存储器材料沉积在先前由多晶硅长度减小的限制区域中，并且可编程电阻式存储器材料沉积到先前由氮化硅材料占据的区域中。

公开(公告)号：US08178405B2

公开(公告)日：2012-05-15

申请号：US12755897

申请日：2010-04-07

申请人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh

发明人： Erh-Kun Lai ,  ChiaHua Ho ,  Kuang Yeu Hsieh

IPC分类号： H01L21/8242

CPC分类号： H01L45/122 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1683

摘要： A memory cell device has a bottom electrode and a top electrode, a plug of memory material in contact with the bottom electrode, and a cup-shaped conductive member having a rim that contacts the top electrode and an opening in the bottom that contacts the memory material. Accordingly, the conductive path in the memory cells passes from the top electrode through the conductive cup-shaped member, and through the plug of phase change material to the bottom electrode. Also, methods for making the memory cell device include steps of forming a bottom electrode island including an insulative element and a stop element over a bottom electrode, forming a separation layer surrounding the island, removing the stop element to form a hole over the insulative element in the separation layer, forming a conductive film in the hole and an insulative liner over conductive film, etching to form a cup-shaped conductive film having a rim and to form an opening through the insulative liner and the bottom of the cup-shaped conductive film to the surface of the bottom electrode, forming a plug of phase change memory material in the opening, and forming a top electrode in contact with the rim of the cup-shaped conductive film.

摘要翻译： 存储单元装置具有底部电极和顶部电极，与底部电极接触的存储器材料的插头以及具有接触顶部电极的边缘和接触存储器的底部开口的杯形导电构件 材料。 因此，存储单元中的导电路径从顶部电极通过导电杯状构件，并通过相变材料的塞子到达底部电极。 此外，用于制造存储单元器件的方法包括在底部电极上形成包括绝缘元件和止动元件的底部电极岛的步骤，形成围绕岛的分离层，去除止动元件以在绝缘元件上方形成孔 在分离层中，在孔中形成导电膜，在导电膜上形成绝缘衬垫，进行蚀刻以形成具有边缘的杯形导电膜，并且通过绝缘衬垫和杯状导电体的底部形成开口 在底部电极的表面形成薄膜，在开口中形成相变记忆材料塞，形成与杯状导电膜的边缘接触的顶部电极。