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    MANUFACTURING METHOD OF SEMICONDUCTOR CHIP, AND KIT
    71.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR CHIP, AND KIT 有权

    公开(公告)号：US20210157241A1

    公开(公告)日：2021-05-27

    申请号：US17161058

    申请日：2021-01-28

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA

    IPC: G03F7/32 ,  H01L21/027 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  H01L21/768 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  G03F7/16 ,  H01L21/3205 ,  G03F7/075 ,  H01L21/28 ,  G03F7/40 ,  B24B37/00 ,  H01L21/304 ,  H01L21/3065

    Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.

    LIQUID CHEMICAL AND METHOD FOR PRODUCING LIQUID CHEMICAL
    73.
    发明申请
    LIQUID CHEMICAL AND METHOD FOR PRODUCING LIQUID CHEMICAL 审中-公开

    公开(公告)号：US20200341381A1

    公开(公告)日：2020-10-29

    申请号：US16924555

    申请日：2020-07-09

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA

    IPC: G03F7/32 ,  G03F7/20 ,  B01D39/16 ,  G03F7/004 ,  H01L21/02

    Abstract: An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent, and metal-containing particles containing a metal atom, in which the number of metal nanoparticles contained in the metal-containing particles and having a particle size of 0.5 to 17 nm is 1.0×101 to 1.0×109 particles/cm3, based on the number of the particles per unit volume of the liquid chemical.

    CHEMICAL LIQUID PURIFICATION METHOD, CHEMICAL LIQUID MANUFACTURING METHOD, AND CHEMICAL LIQUID
    75.
    发明申请
    CHEMICAL LIQUID PURIFICATION METHOD, CHEMICAL LIQUID MANUFACTURING METHOD, AND CHEMICAL LIQUID 审中-公开

    公开(公告)号：US20200023288A1

    公开(公告)日：2020-01-23

    申请号：US16584956

    申请日：2019-09-27

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA

    IPC: B01D11/04 ,  B01D39/18 ,  B01D39/20 ,  B01D39/16

    Abstract: An object of the present invention is to provide a chemical liquid purification method by which a chemical liquid capable of inhibiting the occurrence of short in a semiconductor substrate manufactured by a photolithography process is obtained. Another object of the present invention is to provide a chemical liquid manufacturing method and a chemical liquid. The chemical liquid purification method of the present invention includes a purification step of filtering a liquid to be purified by using a filter, in which a filter satisfying a condition 1 or a condition 2 in the following test is used as the filter.Test: 1,500 ml of a test liquid formed of the organic solvent is brought into contact with the filter for 24 hours under a condition of 23° C., and a content of particles containing at least one kind of metal selected from the group consisting of Fe, Al, Cr, Ni, and Ti in the test liquid after the contact satisfies a predetermined condition.

    PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT
    76.
    发明申请
    PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT 审中-公开

    公开(公告)号：US20190227435A1

    公开(公告)日：2019-07-25

    申请号：US16369712

    申请日：2019-03-29

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA

    IPC: G03F7/038 ,  G03F7/32 ,  G03F7/38 ,  C08F220/18

    Abstract: An object of the present invention is to provide a pattern forming method which is excellent in developability and defect suppression performance. Another object of the present invention is to provide a method for producing an electronic device including the pattern forming method. Still another object of the present invention is to provide a kit capable of forming a pattern which is excellent in developability and defect suppression performance.The pattern forming method of the present invention is a pattern forming method including a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition; an exposing step of exposing the resist film; and a developing step of developing the exposed resist film using a developer, in which the actinic ray-sensitive or radiation-sensitive resin composition contains an acid-decomposable resin represented by a specific structure; and as the developer, a chemical liquid containing an organic solvent, alcohol impurities, and metal impurities containing at least metal atoms is used, the total content of the alcohol impurities being 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the chemical liquid.

    PURIFICATION DEVICE, PURIFICATION METHOD, MANUFACTURING DEVICE, MANUFACTURING METHOD OF CHEMICAL LIQUID, CONTAINER, AND CHEMICAL LIQUID STORAGE CONTAINER
    79.
    发明申请
    PURIFICATION DEVICE, PURIFICATION METHOD, MANUFACTURING DEVICE, MANUFACTURING METHOD OF CHEMICAL LIQUID, CONTAINER, AND CHEMICAL LIQUID STORAGE CONTAINER 审中-公开

    公开(公告)号：US20190060782A1

    公开(公告)日：2019-02-28

    申请号：US16170100

    申请日：2018-10-25

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya SHIMIZU ,  Tetsuya KAMIMURA

    IPC: B01D3/32 ,  B65D25/14 ,  C07C67/54 ,  C07C29/84

    Abstract: An object of the present invention is to provide a purification device which makes it possible to obtain a solvent with a reduced impurity content and a raw material of the solvent. Another object of the present invention is to provide a purification method, a manufacturing device, and a manufacturing method of a chemical liquid. Still another object of the present invention is to provide a container which makes it difficult for an impurity content in a chemical liquid to increase even in a case where the chemical liquid is filled into the container and stored for a predetermined period of time. Yet another object of the present invention is to provide a chemical liquid storage container. The purification device of the present invention is a purification device including a distillation column for purifying a chemical liquid, in which an interior wall of the distillation column is coated with or formed of at least one kind of material selected from the group consisting of a fluororesin and an electropolished metal material, the metal material contains at least one kind of metal selected from the group consisting of chromium and nickel, and a total content of the chromium and the nickel is greater than 25% by mass with respect to a total mass of the metal material.

    TREATMENT LIQUID, METHOD OF MANUFACTURING TREATMENT LIQUID, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
    80.
    发明申请
    TREATMENT LIQUID, METHOD OF MANUFACTURING TREATMENT LIQUID, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20190033718A1

    公开(公告)日：2019-01-31

    申请号：US16150402

    申请日：2018-10-03

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA

    IPC: G03F7/16 ,  G03F7/32 ,  G03F7/42 ,  G03F7/004 ,  H01L21/027

    Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured.A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) or two or more compounds (A) that satisfy the following requirement (a); one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one compound (C) or two or more compounds (C) selected from the group consisting of an Al compound and an NOx compound. In the treatment liquid, a total content of the compound (A) in the treatment liquid is 70.0 to 99.9999999 mass %, a total content of the compounds (B) is 10−10 to 0.1 mass %, and a ratio P of the compound (C) to the compound (B) represented by the following Expression I is 103 to 10−6. Requirement (a): a compound that is selected from the group consisting of an amide compound, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 5.0 to 99.9999999 mass %Requirement (b): a compound that is selected from the group consisting of an amide compound having 6 or more carbon atoms, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 10−1 to 0.1 mass % P=[Total Mass of Compound (C)]/[Total Mass of Compound (B)]  (Expression I)

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