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295 条记录 (耗时 0.026 秒)

    Magnetic recording medium
    71.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号：US4728558A

    公开(公告)日：1988-03-01

    申请号：US890342

    申请日：1986-07-29

    申请人： Toshio Ono ,  Yasuo Tamai ,  Chiaki Mizuno ,  Hiroshi Ogawa ,  Shinji Saito

    发明人： Toshio Ono ,  Yasuo Tamai ,  Chiaki Mizuno ,  Hiroshi Ogawa ,  Shinji Saito

    IPC分类号： C09D5/23 ,  C09D127/04 ,  C09D127/06 ,  C09D175/06 ,  G11B5/70 ,  G11B5/73 ,  G11B5/78

    CPC分类号： G11B5/70 ,  G11B5/7305 ,  Y10S428/90 ,  Y10T428/24355 ,  Y10T428/265

    摘要： A magnetic recording medium such as an audio-tape or a video-tape comprising a flexible support and a magnetic recording layer provided on one surface of said support, which is characterized in that the total of the thickness of said magnetic recording layer (dM) and the thickness of said support (dB), namely dM plus dB, is not larger than 14 .mu.m; the ratio of the thickness of said magnetic recording layer (dM) to the thickness of said support (dB), namely dM/dB, is in the range of 0.6-1.0; and said magnetic recording medium has F-3 tensile strength in the range of 6.0-8.5 kg/mm.sup.2.

    摘要翻译： 一种磁记录介质，例如音频带或录像带，包括设置在所述支撑体的一个表面上的柔性支撑和磁记录层，其特征在于，所述磁记录层（dM）的厚度总和 并且所述载体的厚度（dB）即dM加dB不大于14μm; 所述磁记录层（dM）的厚度与所述支架的厚度的比（dB）即dM / dB在0.6-1.0的范围内; 并且所述磁记录介质的F-3拉伸强度在6.0-8.5kg / mm2的范围内。

    Magnetic recording medium
    72.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号：US4649081A

    公开(公告)日：1987-03-10

    申请号：US787776

    申请日：1985-10-15

    申请人： Hiroshi Ogawa ,  Shinji Saito ,  Chiaki Mizuno ,  Yasuo Tamai

    发明人： Hiroshi Ogawa ,  Shinji Saito ,  Chiaki Mizuno ,  Yasuo Tamai

    IPC分类号： G11B5/708 ,  C09D5/23 ,  C09D7/12 ,  G11B5/71 ,  G11B5/73

    CPC分类号： G11B5/71 ,  Y10S428/90 ,  Y10T428/31663

    摘要： A magnetic recording medium such as an audio-tape or a video-tape comprising a nonmagnetic support and a magnetic recording layer provided on said support, said magnetic recording layer comprising a ferromagnetic powder dispersed in a binder, which is characterized in that said magnetic recording layer comprises at least one modified silicon compound having molecular weight of less than 3,000 and at least one modified silicon compound having molecular weight of not less than 3,000.

    摘要翻译： 一种诸如音频带的磁记录介质或包括设置在所述支撑件上的非磁性支撑和磁记录层的录像带，所述磁记录层包括分散在粘合剂中的铁磁性粉末，其特征在于所述磁记录 层包含分子量小于3,000的至少一种改性硅化合物和至少一种分子量不小于3,000的改性硅化合物。

    Sense amplifier
    73.
    发明授权
    Sense amplifier 失效
    感应放大器

    公开(公告)号：US4604533A

    公开(公告)日：1986-08-05

    申请号：US563501

    申请日：1983-12-20

    申请人： Junichi Miyamoto ,  Shinji Saito

    发明人： Junichi Miyamoto ,  Shinji Saito

    IPC分类号： G11C7/06 ,  H03K19/0944 ,  H03K5/24

    CPC分类号： G11C7/062 ,  H03K19/09448

    摘要： A sense amplifier has a first differential amplifier and a second differential amplifier. The first differential amplifier has a pair of bipolar transistors as differential input elements which respectively receive differential input signals from a MOS circuit. The second differential amplifier has a pair of MOS transistors as differential input elements which respectively receive differential output signals generated from the first differential amplifier.

    摘要翻译： 读出放大器具有第一差分放大器和第二差分放大器。 第一差分放大器具有一对双极晶体管作为分别从MOS电路接收差分输入信号的差分输入元件。 第二差分放大器具有一对MOS晶体管作为分别接收从第一差分放大器产生的差分输出信号的差分输入元件。

    Electromagnetic flapper valve
    74.
    发明授权
    Electromagnetic flapper valve 失效
    电磁挡板阀

    公开(公告)号：US3982554A

    公开(公告)日：1976-09-28

    申请号：US569085

    申请日：1975-04-17

    申请人： Shinji Saito ,  Masao Suzuki

    发明人： Shinji Saito ,  Masao Suzuki

    IPC分类号： F15B13/044 ,  F15B5/00 ,  F16K31/06

    CPC分类号： F16K31/0682 ,  Y10T137/2278 ,  Y10T137/5109

    摘要： An electromagnet is mounted on a ferromagnetic support member. A ferromagnetic flapper valve element arranged to control fluid flow from a nozzle orifice is movably mounted on the ferromagnetic support member and controllably moved by the electromagnet. The electromagnet, the support member and the valve element form a substantially closed magnetic circuit with an air gap being provided between the electromagnet and the valve element. Ferromagnetic and paramagnetic spacers are disposed between the electromagnet and the support member. The air gap between the electromagnet and the valve element is determined by the combined thickness of the spacers and another gap in the magnetic circuit is determined by the thickness of the paramagnetic spacer.

    摘要翻译： 电磁铁安装在铁磁性支撑构件上。 布置成控制来自喷嘴孔的流体流动的铁磁挡板阀元件可移动地安装在铁磁支撑构件上并且由电磁体可控地移动。 电磁体，支撑构件和阀元件形成基本上闭合的磁路，其中气隙设置在电磁体和阀元件之间。 铁磁和顺磁间隔物设置在电磁体和支撑构件之间。 电磁铁与阀体之间的气隙由间隔物的组合厚度确定，磁路中的另一个间隙由顺磁间隔物的厚度决定。

    Semiconductor laser device
    75.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US08649408B2

    公开(公告)日：2014-02-11

    申请号：US12874440

    申请日：2010-09-02

    申请人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2231 ,  H01S5/02461

    摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

    摘要翻译： 根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。 半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及 一对由绝缘体制成的掩埋层，以埋置凹槽。 沟槽的底面随着条纹的距离增加而变浅。

    Positive-electrode material for a lithium ion secondary battery and manufacturing method of the same
    76.
    发明授权
    Positive-electrode material for a lithium ion secondary battery and manufacturing method of the same 有权
    锂离子二次电池用正极材料及其制造方法

    公开(公告)号：US08597835B2

    公开(公告)日：2013-12-03

    申请号：US13473071

    申请日：2012-05-16

    申请人： Takashi Kawasaki ,  Hiroshi Sakashita ,  Takehiko Sawai ,  Shinji Saito

    发明人： Takashi Kawasaki ,  Hiroshi Sakashita ,  Takehiko Sawai ,  Shinji Saito

    IPC分类号： H01M4/58 ,  H01B1/04

    CPC分类号： H01M4/5825 ,  H01M4/136 ,  H01M4/1397 ,  H01M4/364 ,  H01M4/60 ,  H01M4/625 ,  H01M10/0525 ,  Y02T10/7011

    摘要： Provided is a positive electrode material for a safe, high capacity, long lifetime lithium ion secondary battery capable of large current charging and discharging. The positive electrode material contains between 5% by mass or more and 30% by mass or less of a carbon black composite formed by joining together fibrous carbon and carbon black wherein ash is 1.0% or less by mass in accordance with JIS K 1469 and the remainder includes olivine-type lithium iron phosphate, and volatile oxygen-containing functional groups which constitutes 1.0% or less by mass of the positive electrode material. The fibrous carbon is preferably a nanotube having a fiber diameter of 5 nm or more and 50 nm or less and a specific surface area between 50 m2/g or more and 400 m2/g or less.

    摘要翻译： 提供一种能够进行大电流充放电的安全，高容量，长寿命的锂离子二次电池用正极材料。 正极材料含有5质量％以上且30质量％以下的通过将纤维状碳和炭黑接合而形成的炭黑复合体，其中灰分按照JIS K1469 1.0质量％以下， 余量包括橄榄石型磷酸铁锂和构成正极材料质量的1.0％以下的挥发性含氧官能团。 纤维状碳优选为纤维直径为5nm以上且50nm以下，比表面积为50m 2 / g以上且400m 2 / g以下的纳米管。

    Semiconductor laser device and method of manufacturing the same
    78.
    发明授权
    Semiconductor laser device and method of manufacturing the same 失效
    半导体激光器件及其制造方法

    公开(公告)号：US08457167B2

    公开(公告)日：2013-06-04

    申请号：US12873821

    申请日：2010-09-01

    申请人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Jongil Hwang ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Jongil Hwang ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01S5/00

    CPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/323

    摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

    摘要翻译： 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光器件中，GaN衬底和半导体层的总厚度为100μm以上，并且，突起的顶面与凹部的底面之间的距离为5μm以上且50μm以下。 。