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    VARIABLE CAPACITANCE DEVICE AND PORTABLE PHONE
    71.
    发明申请
    VARIABLE CAPACITANCE DEVICE AND PORTABLE PHONE 失效
    可变电容器和便携式电话

    公开(公告)号：US20070281646A1

    公开(公告)日：2007-12-06

    申请号：US11755107

    申请日：2007-05-30

    申请人： Kazuhiko Itaya ,  Hiroshi Yoshida ,  Takashi Kawakubo

    发明人： Kazuhiko Itaya ,  Hiroshi Yoshida ,  Takashi Kawakubo

    IPC分类号： H04B1/26

    CPC分类号： H01G5/18

    摘要： A variable capacitance device has a piezoelectric driving part, a movable electrode, a fixed electrode, a dielectric film and a driving control unit. The piezoelectric driving part has a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on an undersurface of the piezoelectric film and electrode slits which separate the upper electrode and the lower electrode into two, respectively. The movable electrode is provided via the electrode slits at one end of the piezoelectric driving part. The fixed electrode is disposed opposite to the movable electrode via a gap. The dielectric film is disposed opposite to the movable electrode via the gap and provided on the fixed electrode. The driving control unit adjusts a distance between the movable electrode and the fixed electrode to reduce a fluctuation of a predetermined capacitance of a variable capacitor formed between the variable electrode and the fixed electrode.

    摘要翻译： 可变电容器件具有压电驱动部，可动电极，固定电极，电介质膜和驱动控制部。 压电驱动部分具有压电膜，设置在压电膜的顶表面上的上电极，设置在压电膜的下表面上的下电极以及分别将上电极和下电极分成两部分的电极狭缝。 可动电极通过电极狭缝设置在压电驱动部分的一端。 固定电极通过间隙与可动电极相对设置。 电介质膜经由间隙与可动电极相对设置，设置在固定电极上。 驱动控制单元调整可动电极和固定电极之间的距离，以减小形成在可变电极和固定电极之间的可变电容器的预定电容的波动。

    Method of mounting light emitting element
    72.
    发明授权
    Method of mounting light emitting element 有权
    发光元件的安装方法

    公开(公告)号：US07264980B2

    公开(公告)日：2007-09-04

    申请号：US11348210

    申请日：2006-02-06

    申请人： Masafumi Ozawa ,  Hiroshi Yoshida ,  Takashi Kobayashi

    发明人： Masafumi Ozawa ,  Hiroshi Yoshida ,  Takashi Kobayashi

    IPC分类号： H01L21/00 ,  H01L29/26

    CPC分类号： H01L21/681 ,  G02B6/4221 ,  H01S5/02252

    摘要： The present invention provides a method of mounting a light emitting element, in which a light emission point can be positioned at high accuracy with respect to the mounting member. A semiconductor laser element is placed on a matching stage. Next, a position and an azimuth of a laser stripe of the semiconductor laser element is observed, and linear displacement in X and Y directions of the semiconductor laser element from a reference line and a reference point on the matching stage, and angular displacement in an azimuth (θ) within an X-Y plane are measured. In accordance with a measured result, a control signal is sent to a driving mechanism of the feeding collet to drive the feeding collet, and the position of the semiconductor laser element is adjusted on the matching stage. After the adjustment, the semiconductor laser element is fed to and placed on a mounting surface of a heat sink H.

    摘要翻译： 本发明提供了一种安装发光元件的方法，其中发光点可以相对于安装构件以高精度定位。 将半导体激光元件放置在匹配台上。 接下来，观察半导体激光元件的激光条的位置和方位角，并且从参考线和匹配台上的参考点在半导体激光元件的X和Y方向上的线性位移以及匹配台中的角位移 测量XY平面内的方位角（θ）。 根据测量结果，将控制信号发送到馈送夹头的驱动机构以驱动馈送夹头，并且在匹配台上调整半导体激光元件的位置。 在调整之后，半导体激光元件被馈送到放置在散热器H的安装表面上并被放置在散热器H的安装表面上。

    Fracture Prediction Device For Spot Welded Portion, Method Of The Same, Computer Program, And Computer Readable Recording Medium
    73.
    发明申请
    Fracture Prediction Device For Spot Welded Portion, Method Of The Same, Computer Program, And Computer Readable Recording Medium 有权
    点焊部分断裂预测装置，方法，计算机程序和计算机可读记录介质

    公开(公告)号：US20070199924A1

    公开(公告)日：2007-08-30

    申请号：US10599921

    申请日：2005-04-12

    申请人： Hiroshi Yoshida ,  Naruhiko Nomura ,  Akihiro Uenishi

    发明人： Hiroshi Yoshida ,  Naruhiko Nomura ,  Akihiro Uenishi

    IPC分类号： B23K11/25

    CPC分类号： G01N3/24 ,  B23K11/11 ,  G01N3/08 ,  G01N2203/0067 ,  G01N2203/0214 ,  G01N2203/0216 ,  G01N2203/0218 ,  G01N2203/0296 ,  G06F17/5018

    摘要： According to exemplary embodiments of the present invention, a fracture prediction device for a spot welded portion can be provided. For example, the device may include an input arrangement configured to input all or some of a material strength, a plate thickness, a nugget diameter of a spot welding, a plate width of a joint, and a rotation angle of the joint in a tension test, based on a cross tension test and/or a shear tension test at a spot welded joint. The device can also include a first calculation arrangement configured to calculate a fracture strength parameter of the spot welded portion from all or any of the material strength, the plate thickness, the nugget diameter of the spot welding, the plate width of the joint, and the rotation angle of the joint in the tension test. A parameter storage arrangement may also be provided which can be configured to store the fracture strength parameter by each steel type. Further, the device may further have a second calculation arrangement configured to determine a fracture of the spot welded portion by installing the fracture strength parameter stored in the parameter storage arrangement into a fracture prediction formula in which a deformation at a periphery of the spot welding is modeled by a finite element procedure. Exemplary embodiments of the method software arrangement and computer accessible medium performing similar procedures can also be provided.

    摘要翻译： 根据本发明的示例性实施例，可以提供一种用于点焊部分的断裂预测装置。 例如，设备可以包括输入装置，其被配置为输入材料强度，板厚度，点焊的熔核直径，接头的板宽度和接头处于张力的旋转角度的全部或一些 基于交叉拉伸试验和/或点焊接头处的剪切张力试验进行试验。 该装置还可以包括第一计算装置，其被配置为根据材料强度，板厚度，点焊的熔核直径，接头的板宽度以及所述点焊的直径来计算点焊部的断裂强度参数 接头在张力试验中的旋转角度。 还可以提供参数存储装置，其可被配置为通过每种钢种来存储断裂强度参数。 此外，该装置还可以具有第二计算装置，其被配置为通过将存储在参数存储装置中的断裂强度参数设置为断点预测公式来确定点焊部分的断裂，其中点焊周边的变形为 由有限元程序建模。 还可以提供方法软件配置和执行类似过程的计算机可访问介质的示例性实施例。

    Circular polarization spin semiconductor laser using magnetic semiconductor and laser beam generating method
    74.
    发明授权
    Circular polarization spin semiconductor laser using magnetic semiconductor and laser beam generating method 失效
    使用磁性半导体的圆偏振自旋半导体激光器和激光束产生方法

    公开(公告)号：US07254150B2

    公开(公告)日：2007-08-07

    申请号：US10502542

    申请日：2003-01-27

    申请人： Hiroshi Yoshida ,  Kazunori Sato

    发明人： Hiroshi Yoshida ,  Kazunori Sato

    IPC分类号： H01S3/10 ,  H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/0607 ,  H01S5/305 ,  H01S5/3068 ,  H01S5/3086 ,  H01S5/343 ,  H01S5/347 ,  H01S2301/14

    摘要： Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting/controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.

    摘要翻译： 公开了一种能够通过将电流注入到p型和n型半金属磁性半导体层中而产生完全圆偏振的激光的自旋基半导体激光源。 p型和n型半金属磁性半导体层中的每一个通过用过渡金属原子掺杂磁性半导体和任选地与受主或者给体来制备。 或者，通过向磁性半导体提供栅极并根据场效应来调整/控制其铁磁性状态来制备p型和n型半金属磁性半导体层。 本发明可以解决常规圆偏振半导体激光源中圆极化程度不足的问题。

    Reagent, method and apparatus for measuring amylase activity
    78.
    发明授权
    Reagent, method and apparatus for measuring amylase activity 有权
    用于测量淀粉酶活性的试剂，方法和仪器

    公开(公告)号：US07183069B2

    公开(公告)日：2007-02-27

    申请号：US10383007

    申请日：2003-03-06

    申请人： Masaki Yamaguchi ,  Hiroshi Yoshida ,  Nobutaka Kusaba ,  Yasufumi Mizuno

    发明人： Masaki Yamaguchi ,  Hiroshi Yoshida ,  Nobutaka Kusaba ,  Yasufumi Mizuno

    IPC分类号： C12Q1/40

    CPC分类号： G01N33/52 ,  C12Q1/40

    摘要： An object of the present invention is to provide a means for measuring amylase activity existing in biological samples such as saliva in a more convenient manner and is particularly to provide a means (reagent for measurement, method for measurement and apparatus) by which a sample containing high concentrations of amylase is measured. There has been found a means (reagent for measurement, method for measurement and apparatus), whereby amylase activity in an amylase sample having a high activity value can be quite conveniently measured by making an oligosaccharide substrate carry on a support in an enzymatic method for measuring amylase activity using a modified oligosacharide substrate, whereupon the present invention has been achieved.

    摘要翻译： 本发明的目的是提供一种用于以更方便的方式测量存在于生物样品例如唾液中的淀粉酶活性的方法，并且特别地提供一种用于测量的装置（测量方法，测量方法和装置），通过该装置 测量高浓度的淀粉酶。 已经发现了一种方法（用于测量的试剂，测量方法和装置），其中具有高活性值的淀粉酶样品中的淀粉酶活性可以通过使寡糖底物在酶法测量中进行支持而非常方便地测量 使用改性的寡糖基底的淀粉酶活性，从而实现了本发明。

    Polishing method
    79.
    发明授权
    Polishing method 有权
    抛光方法

    公开(公告)号：US07163895B2

    公开(公告)日：2007-01-16

    申请号：US10481019

    申请日：2003-04-17

    申请人： Tetsuji Togawa ,  Makoto Fukushima ,  Kunihiko Sakurai ,  Hiroshi Yoshida ,  Osamu Nabeya ,  Teruhiko Ichimura

    发明人： Tetsuji Togawa ,  Makoto Fukushima ,  Kunihiko Sakurai ,  Hiroshi Yoshida ,  Osamu Nabeya ,  Teruhiko Ichimura

    IPC分类号： H01L21/302

    CPC分类号： B24B37/30 ,  B24B37/013 ,  B24B37/042 ,  H01L21/30625 ,  Y10S438/977

    摘要： The present invention is relates to a polishing method for polishing a semiconductor wafer (W) by pressing the semiconductor wafer (W) against a polishing surface (10) with use of a top ring (23) for holding the semiconductor wafer (W). A pressure chamber (70) is defined in the top ring (23) by attaching an elastic membrane (60) to a lower surface of a vertically movable member (62). The semiconductor wafer (W) is polished while a pressurized fluid is supplied to the pressure chamber (70) so that the semiconductor wafer (W) is pressed against the polishing surface (10) by a fluid pressure of the fluid. The semiconductor wafer (W) which has been polished is released from the top ring (23) by ejecting the pressurized fluid from an opening (62a) defined centrally in the vertically movable member (62).

    摘要翻译： 本发明涉及通过使用用于保持半导体晶片（W）的顶环（23）将半导体晶片（W）压靠在研磨面（10）上来研磨半导体晶片（W）的研磨方法。 通过将弹性膜（60）附接到可垂直移动的构件（62）的下表面，将压力室（70）限定在顶环（23）中。 抛光半导体晶片（W），同时向压力室（70）供应加压流体，使得半导体晶片（W）通过流体的流体压力被压靠在抛光表面（10）上。 已经被抛光的半导体晶片（W）通过从限定在可垂直移动部件（62）中心的开口（62a）喷射加压流体而从顶环（23）释放。