Abstract:
A display device is disclosed, which includes: a first substrate having a first hole and a second hole; and a circuit layer disposed at one side of the first substrate, wherein the first hole has a first width, the second hole has a second width, and a ratio of the second width to the first width is within a range between 20 and 4000.
Abstract:
A display device is provided. The display device includes a substrate, a driving transistor, a first electrode and an insulation layer. The driving transistor is disposed on the substrate, wherein the driving transistor comprises a gate electrode. The first electrode is disposed on the gate electrode. The insulation layer is disposed on the first electrode, wherein the insulation layer has an opening, and the opening exposes a portion of the first electrode. In view of a first direction perpendicular to the substrate, the first electrode partially overlaps the gate electrode to form a first portion, and the first portion is separated from the opening.
Abstract:
A display device is provided. The display device includes a substrate, and a first sub-pixel and a second sub-pixel disposed on the substrate, wherein the first sub-pixel and the second sub-pixel respectively correspond to two different colors. The first sub-pixel includes a first light-emitting element and a first wavelength conversion layer adjacent to the first light-emitting element, wherein a light emitted from the first light-emitting element passes through the first wavelength conversion layer. The second sub-pixel includes a second light-emitting element and a second wavelength conversion layer adjacent to the second light-emitting element, wherein a light emitted from the second light-emitting element passes through the second wavelength conversion layer. An area of the first wavelength conversion layer and an area of the second wavelength conversion layer are different.
Abstract:
A display panel is provided, which includes a first substrate, a first insulating layer on the first substrate, a semiconductor layer on the first insulating layer, and a second insulating layer on the semiconductor layer and the first insulating layer. The second insulating layer has a surface in contact with the first insulating layer. The second insulating layer has a first region. The first region has a thickness of 40 nm from the surface of the second insulating layer, and the second insulating layer has a fluoride ion gain ratio of 80% to 95% in the first region.
Abstract:
A display panel is provided. The display panel includes a color filter substrate. The color filter substrate includes a first substrate, a black matrix, a color filter layer, a transparent conductive layer, and a plurality of spacers. The black matrix and the color filter layer are disposed on the first substrate. The transparent conductive layer is disposed on the color filter layer and the black matrix, and has a plurality of openings located above the black matrix. The spacers are located on the transparent conductive layer and located on the black matrix. At least one of the openings is located between the adjacent spacers, and at least one of the spacers partially overlaps at least one of the openings.
Abstract:
A display panel comprises a first substrate, a second substrate and an organic planarization layer. The first substrate has an active area and a non-active area disposed adjacent to the active area. The second substrate is disposed opposite the first substrate. The organic planarization layer is disposed on the first substrate facing the second substrate and includes at least a first through portion which is disposed in the non-active area and exposes a film layer under the organic planarization layer.
Abstract:
A thin film transistor substrate includes: a substrate; a gate disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate; an active layer disposed on the gate insulating layer and above the gate, and the active layer has a first oxygen vacancy portion and a second oxygen vacancy portion; a source electrode and a drain electrode disposed on the active layer, the source electrode is connected to the first oxygen vacancy portion, and the drain electrode is connected to the second oxygen vacancy portion.
Abstract:
A display panel whose TFT substrate comprises a substrate, a gate layer, a gate dielectric layer, a semiconductor layer, a first electrode layer, a first passivation layer, a second passivation layer, a via and a second electrode layer is provided. The gate layer is disposed on the substrate. The gate dielectric layer is disposed on the gate layer. The semiconductor layer is disposed on the gate dielectric layer. The first electrode layer is disposed on the semiconductor layer. The first and second passivation layers are sequentially disposed on the first electrode layer. The via penetrates the passivation layers to expose the first electrode layer. The second electrode layer is electrically connected to the first electrode layer through the via. The first and second passivation layers have first and second taper angles respectively. The difference between the first and second taper angles is below 30°.
Abstract:
An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.
Abstract:
An embodiment of the invention provides a thin film transistor substrate includes: a substrate; a plurality of transistors on the substrate, wherein each of the transistors includes: a light-blocking layer on the substrate; an active layer on the light-blocking layer; a gate insulating layer on the substrate and covering the active layer; a gate electrode on the gate insulating layer and over the active layer; a source electrode on the substrate and electrically connected to the active layer; and a drain electrode on the substrate and electrically connected to the active layer.