Microelectronic package having chamber sealed by material including one or more intermetallic compounds
    71.
    发明授权
    Microelectronic package having chamber sealed by material including one or more intermetallic compounds 失效
    微电子封装,其具有由包括一种或多种金属间化合物的材料密封的腔室

    公开(公告)号:US07061099B2

    公开(公告)日:2006-06-13

    申请号:US10955872

    申请日:2004-09-30

    申请人: Daoqiang Lu John Heck

    发明人: Daoqiang Lu John Heck

    IPC分类号: H01L23/12 H01L23/10

    摘要: Microelectronic packages having chambers and sealing materials, and methods of making the packages, and sealing the chambers, are disclosed. An exemplary package may include a first surface, a second surface, a solid sealing material including an intermetallic compound, such as, for example, of gallium or another relatively low melting material, between the first surface and the second surface, and a chamber defined by the first surface, the second surface, and the sealing material. An exemplary method may include disposing a ring of a sealing material including a liquid metal between a first surface and a second surface to define a chamber between the first surface, the second surface, and the ring of the sealing material, and sealing the chamber by heating the sealing material to react the liquid metal with a metal that is capable of forming an intermetallic compound with the liquid metal.

    摘要翻译: 公开了具有室和密封材料的微电子封装,以及制造封装的方法和密封室。 示例性包装可以包括在第一表面和第二表面之间的第一表面,第二表面,包括金属间化合物(例如镓或另一种较低熔点的材料)的固体密封材料, 通过第一表面,第二表面和密封材料。 示例性方法可以包括在第一表面和第二表面之间设置包括液体金属的密封材料的环,以在第一表面,第二表面和密封材料的环之间限定腔室,并且通过 加热密封材料以使液态金属与能够与液态金属形成金属间化合物的金属反应。

    Module integrating MEMS and passive components
    72.
    发明申请
    Module integrating MEMS and passive components 有权
    集成MEMS和无源元件的模块

    公开(公告)号:US20060001123A1

    公开(公告)日:2006-01-05

    申请号:US10882635

    申请日:2004-06-30

    IPC分类号: H01L29/00

    摘要: An apparatus may include a first substrate, one or more microelectromechanical systems (MEMS) coupled to the first substrate, a second substrate coupled with the first substrate, and one or more passive components coupled to the second substrate. A method may include aligning a first substrate having one or more MEMS coupled thereto and a second substrate having one or more passive components coupled thereto, and coupling the aligned substrates.

    摘要翻译: 装置可以包括第一基板,耦合到第一基板的一个或多个微机电系统(MEMS),与第一基板耦合的第二基板以及耦合到第二基板的一个或多个无源部件。 一种方法可以包括对准具有耦合到其上的一个或多个MEMS的第一基板和具有耦合到其上的一个或多个无源部件的第二基板,以及连接对准的基板。

    Microelectromechanical (MEMS) switching apparatus
    73.
    发明申请
    Microelectromechanical (MEMS) switching apparatus 有权
    微机电(MEMS)开关装置

    公开(公告)号:US20050007219A1

    公开(公告)日:2005-01-13

    申请号:US10912413

    申请日:2004-08-04

    IPC分类号: H01H59/00 H01H51/22

    摘要: This application discloses a microelectromechanical (MEMS) switch apparatus comprising an anchor attached to a substrate and an electrically conductive beam attached to the anchor and in electrical contact therewith. The beam comprises a tapered portion having a proximal end and a distal end, the proximal end being attached to the anchor, an actuation portion attached to the distal end of the tapered portion, a tip attached to the actuation portion, the tip having a contact dimple thereon. The switch apparatus also includes an actuation electrode attached to the substrate and positioned between the actuation portion and the substrate. Additional embodiments are also described and claimed.

    摘要翻译: 本申请公开了一种微机电(MEMS)开关设备,其包括附接到基板的锚固件和附接到锚固件并与其接触的导电梁。 所述梁包括具有近端和远端的锥形部分,所述近端附接到所述锚固件,附接到所述锥形部分的远端的致动部分,附接到所述致动部分的尖端,所述尖端具有触点 在其上的凹坑。 开关装置还包括附接到基板并位于致动部分和基板之间的致动电极。 还描述和要求保护附加实施例。

    SEMICONDUCTOR SUBSTRATE FOR AN OPTICAL TRANSMITTER APPARATUS AND METHOD
    75.
    发明申请
    SEMICONDUCTOR SUBSTRATE FOR AN OPTICAL TRANSMITTER APPARATUS AND METHOD 有权
    用于光学发射器装置和方法的半导体衬底

    公开(公告)号:US20130273672A1

    公开(公告)日:2013-10-17

    申请号:US13997615

    申请日:2011-12-08

    摘要: Embodiments of the present disclosure describe semiconductor substrate techniques and configurations for an optical receiver. In one embodiment, a system includes a semiconductor substrate having one or more optical alignment features formed in a surface of the semiconductor substrate and an optical receiver assembly coupled with the semiconductor substrate, the optical receiver assembly including a photodetector device coupled with the surface of the semiconductor substrate, wherein the one or more optical alignment features facilitate precise optical alignment between a lens assembly and the photodetector device when the lens assembly is coupled with the semiconductor substrate using the one or more optical alignment features. Other embodiments may be described and/or claimed.

    摘要翻译: 本公开的实施例描述了用于光接收机的半导体衬底技术和配置。 在一个实施例中,系统包括具有形成在半导体衬底的表面中的一个或多个光学对准特征的半导体衬底和与半导体衬底耦合的光学接收器组件,该光学接收器组件包括与 半导体衬底,其中当透镜组件使用一个或多个光学对准特征与半导体衬底耦合时,一个或多个光学对准特征有助于透镜组件和光电检测器器件之间的精确光学对准。 可以描述和/或要求保护其他实施例。

    Method for forming MEMS devices having low contact resistance and devices obtained thereof
    76.
    发明授权
    Method for forming MEMS devices having low contact resistance and devices obtained thereof 有权
    用于形成具有低接触电阻的MEMS器件的方法及其获得的器件

    公开(公告)号:US08487386B2

    公开(公告)日:2013-07-16

    申请号:US12817631

    申请日:2010-06-17

    IPC分类号: H01L27/14

    摘要: The present disclosure proposes a method for manufacturing in a MEMS device a low-resistance contact between a silicon-germanium layer and a layer contacted by this silicon-germanium layer, such as a CMOS metal layer or another silicon-germanium layer, through an opening in a dielectric layer stack separating both layers. An interlayer is formed in this opening, thereby covering at least the sidewalls of the opening on the exposed surface of the another layer at the bottom of this opening. This interlayer may comprise a TiN layer in contact with the silicon-germanium layer. This interlayer can further comprise a Ti layer in between the TiN layer and the layer to be contacted. In another embodiment this interlayer comprises a TaN layer in contact with the silicon-germanium layer. This interlayer can then further comprise a Ta layer in between the TaN layer and the layer to be contacted.

    摘要翻译: 本公开提出了一种用于在MEMS器件中制造硅 - 锗层与由该硅 - 锗层接触的层之间的低电阻接触的方法,例如CMOS金属层或另一硅 - 锗层,通过开口 在分离两层的电介质层叠层中。 在该开口中形成中间层,从而至少覆盖在该开口底部的另一层的露出表面上的开口的至少侧壁。 该中间层可以包括与硅 - 锗层接触的TiN层。 该中间层可以进一步包括在TiN层和待接触层之间的Ti层。 在另一个实施方案中,该中间层包括与硅 - 锗层接触的TaN层。 然后该中间层可以进一步包括在TaN层和待接触层之间的Ta层。

    PROTECTION LAYERS FOR MEDIA PROTECTION DURING FABRICATION OF PROBE MEMORY DEVICE
    77.
    发明申请
    PROTECTION LAYERS FOR MEDIA PROTECTION DURING FABRICATION OF PROBE MEMORY DEVICE 失效
    探针存储器件制造过程中的媒体保护保护层

    公开(公告)号:US20100127727A1

    公开(公告)日:2010-05-27

    申请号:US12242769

    申请日:2008-09-30

    申请人: John Heck

    发明人: John Heck

    IPC分类号: G01R31/02 H01L21/50

    摘要: A micro-electro-mechanical system (MEMS) seek-scan probe (SSP) memory device utilizes a protective layer over the delicate media layer to protect the media during harsh processing steps that may otherwise damage the media layer. The protective layer may comprise a layer of germanium and a layer of silicon dioxide.

    摘要翻译: 微电子机械系统(MEMS)寻找扫描探针(SSP)存储器件利用微妙介质层上的保护层,以在恶劣的处理步骤中保护介质,否则可能会损坏介质层。 保护层可以包括锗层和二氧化硅层。

    Through-wafer vias and surface metallization for coupling thereto
    78.
    发明授权
    Through-wafer vias and surface metallization for coupling thereto 有权
    通孔和用于耦合的表面金属化

    公开(公告)号:US07510907B2

    公开(公告)日:2009-03-31

    申请号:US11165465

    申请日:2005-06-22

    IPC分类号: H01L21/44

    摘要: An apparatus and method of fabricating a through-wafer via. A first mask is formed over a first side of a first semiconductor die to define a first via area. A deep recess is etched through the first semiconductor die in the first via area and a blanket metal layer is formed over the first side including the deep recess. The blanket metal layer is removed from an outer surface of the first side of the first semiconductor die while retaining a portion of the blanket metal layer within the deep recess.

    摘要翻译: 一种制造通晶片通孔的装置和方法。 第一掩模形成在第一半导体管芯的第一侧上以限定第一通孔区域。 通过第一通孔区域中的第一半导体管芯蚀刻深的凹部,并且在包括深凹部的第一侧上形成覆盖金属层。 将橡皮布金属层从第一半导体管芯的第一侧的外表面移除,同时将橡皮布金属层的一部分保持在深凹部内。

    MEMS switch stopper bumps with adjustable height
    79.
    发明授权
    MEMS switch stopper bumps with adjustable height 失效
    具有可调高度的MEMS开关止动凸块

    公开(公告)号:US07283024B2

    公开(公告)日:2007-10-16

    申请号:US10740649

    申请日:2003-12-18

    申请人: Hanan Bar John Heck

    发明人: Hanan Bar John Heck

    IPC分类号: H01H51/22

    CPC分类号: H01H59/0009 H01H2059/0072

    摘要: In a Micro Electro-Mechanical System (MEMS) switch, a common switch failure is a short between the upper and the lower electrostatic actuation plates. Such shorts may occur due to torque deformation. Stopper bumps having a slightly lower height profile than that of the contact bumps are provided to prevent such shorts. The stopper bumps may be made using the same mask as that used to create the contact bump with the height of the respective bumps controlled by determining the diameter of the bumps.

    摘要翻译: 在微机电系统(MEMS)开关中,常见的开关故障是上下静电驱动板之间的短路。 这种短路可能由于扭矩变形而发生。 提供具有比接触凸块略高的高度轮廓的止动凸块以防止这种短路。 可以使用与用于产生接触凸块相同的掩模制造止动凸块,通过确定凸块的直径来控制各凸起的高度。

    Transient liquid phase bonding method
    80.
    发明申请
    Transient liquid phase bonding method 审中-公开
    瞬态液相接合法

    公开(公告)号:US20070152026A1

    公开(公告)日:2007-07-05

    申请号:US11323548

    申请日:2005-12-30

    IPC分类号: B23K20/00 B23K28/00 B23K35/14

    摘要: A bonding method, comprising locating a composition between and in contact with first and second pieces, the composition including a bonding metal which is one of Zn, Sn, In, and Bi, and a melting temperature depressing metal which is different than the bonding metal and is one of Zn, Sn, In, and Bi, heating the composition to diffuse the melting temperature depressing metal into the first piece and increase the melting temperature of the composition, and allowing the composition to cool.

    摘要翻译: 一种接合方法,包括在第一和第二片之间定位组合物并与之接触,所述组合物包括作为Zn,Sn,In和Bi之一的接合金属和不同于接合金属的熔融降温金属 并且是Zn,Sn,In和Bi中的一种,加热组合物以将熔融温度降低的金属扩散到第一片中并增加组合物的熔融温度,并使组合物冷却。