公开(公告)号：US5297928A

公开(公告)日：1994-03-29

申请号：US898402

申请日：1992-06-15

申请人： Koichiro Imakiire ,  Keiichi Shiraishi ,  Masanori Kimura ,  Masayoshi Tagawa

发明人： Koichiro Imakiire ,  Keiichi Shiraishi ,  Masanori Kimura ,  Masayoshi Tagawa

IPC分类号： F04D29/16 ,  F04D29/58 ,  F01D11/00

CPC分类号： F04D29/5846 ,  F04D29/162

摘要： A centrifugal compressor has a plurality of seals arranged at the back of an impeller for sealing the impeller outlet and form an annular space defined at the back of the impeller. The annular space is fed with a cold gas under a higher pressure than that of the air discharged at the impeller outlet. Thus, the back of the impeller is cooled down.

摘要翻译： 离心式压缩机具有布置在叶轮背面的多个密封件，用于密封叶轮出口并形成限定在叶轮背面的环形空间。 在比在叶轮出口排出的空气更高的压力下，向环形空间供给冷气。 因此，叶轮的后部被冷却。

公开(公告)号：US5258092A

公开(公告)日：1993-11-02

申请号：US855978

申请日：1992-03-23

申请人： Hirotoshi Yamagishi ,  Masanori Kimura ,  Hideo Arai

发明人： Hirotoshi Yamagishi ,  Masanori Kimura ,  Hideo Arai

IPC分类号： C30B13/00 ,  C30B13/26 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B13/26 ,  Y10S117/917

摘要： The present invention is intended to provide a method of growing a silicon monocrystalline rod by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod in the diametrical direction is made microscopically uniform, characterized in that a magnetic field forming means is arranged above and/or below a melting zone of said silicon monocrystalline rod to surround said silicon monocrystalline rod and a magnetic field is applied to the melting zone of the silicon monocrystalline rod through said magnetic forming means, and preferably the magnetic field forming means is constituted by supplying a direct electric current through a solenoid coil surrounding said silicon monocrystalline rod.

公开(公告)号：US4053314A

公开(公告)日：1977-10-11

申请号：US601539

申请日：1975-08-04

申请人： Masanori Kimura ,  Koji Irino

发明人： Masanori Kimura ,  Koji Irino

IPC分类号： G03C5/18 ,  G03C5/34

CPC分类号： G03C5/18 ,  Y10S430/131

摘要： On an apparatus for developing latent images of diazotype prints with a developer liquid containing an organic amine or amines as the developing agent, the tendency of the diazotype paper to curl and wind round the applicator roller is effectively precluded by the addition of a very small amount of a fluorocarbon non-ionic surface active agent. The amount of the agent is preferably in the range from 0.01 to 1% of the total weight of the developer composition.

公开(公告)号：US20120165456A1

公开(公告)日：2012-06-28

申请号：US13390446

申请日：2010-08-04

申请人： Masanori Kimura ,  Toshio Yamato

发明人： Masanori Kimura ,  Toshio Yamato

IPC分类号： C09D127/04

CPC分类号： C08G77/26 ,  C08L23/283 ,  C08L75/04 ,  C08L83/04 ,  C09D5/022 ,  C09D5/028 ,  C09D7/70 ,  C09D123/283 ,  C09D151/06 ,  C08L2666/20 ,  C08L2666/02

摘要： A coating composition contains (A) a water-based emulsion containing (a) amino group-containing polyorganosiloxane having a self crosslinking property, (b) chlorinated polyolefin, and (c) a water dispersible polyurethane resin, and (B) spherical particles made up of a rubbery elastic body mixed and dispersed in the water-based emulsion (A). The water-based emulsion (A) can be obtained by mixing a first emulsion containing the amino group-containing polyorganosiloxane (a), a second emulsion containing the chlorinated polyolefin (b), and the water dispersion of the polyurethane resin (c). The coating composition can form a coating film excellent in preservation stability, coating uniformity, working life, having good non-tackness, water repellancy, lubricity, and excellent in adhesiveness and abrasion resistance.

摘要翻译： 涂料组合物含有（A）含有（a）具有自交联性的含氨基的聚有机硅氧烷的水性乳液，（b）氯化聚烯烃和（c）水分散性聚氨酯树脂，和（B）制成的球形颗粒 将其混合并分散在水性乳液（A）中的橡胶状弹性体的上方。 水性乳液（A）可以通过混合含有含氨基的聚有机硅氧烷（a）的第一乳液，含有氯化聚烯烃（b）的第二乳液和聚氨酯树脂（c）的水分散体）来获得。 涂料组合物可以形成保存稳定性，涂布均匀性，使用寿命，非粘性，防水性，润滑性，粘合性和耐磨性优异的优异的涂膜。

公开(公告)号：US20080136059A1

公开(公告)日：2008-06-12

申请号：US11984716

申请日：2007-11-21

申请人： Yosuke Yoshino ,  Masanori Kimura ,  Takashi Takezawa

发明人： Yosuke Yoshino ,  Masanori Kimura ,  Takashi Takezawa

IPC分类号： B29C41/14

CPC分类号： A61M25/1029 ,  A61L29/041 ,  A61L29/06 ,  A61M25/0662 ,  A61M25/1034 ,  A61M2025/1052 ,  C08L53/02

摘要： To provide a balloon catheter having a flexible and highly expandable balloon so as to prevent the inner wall of the blood vessel from being damaged by the passage of the balloon In a balloon catheter aimed to be stayed in a blood vessel and to be used mainly for the occlusion of a blood vessel, the balloon comprises a material selected from materials which have sufficient flexibility for preventing a blood vessel blocking operation from giving a damage to a vascular wall, have sufficient elasticity with its shrink characteristics when removing the catheter, and prevent a thrombus due to a direct contact to blood; and a maximum stretching of the material of said balloon in the state stayed in the blood vessel is defined so as to exceed a maximum stretching of said balloon itself.

摘要翻译： 提供具有柔性且高度膨胀的气囊的球囊导管，以防止血管的内壁被气囊的通过所损伤。在气囊导管中，旨在停留在血管中并主要用于 血管闭塞时，气囊包括选自具有足够的柔性以防止血管阻塞手术给血管壁造成损伤的材料的材料，当移除导管时具有足够的弹性和收缩特性，并防止 由于与血液直接接触引起的血栓; 限定滞留在血管中的状态下的所述气囊的材料的最大拉伸，以超过所述球囊本身的最大拉伸。

公开(公告)号：US07235133B2

公开(公告)日：2007-06-26

申请号：US10030867

申请日：2001-02-16

申请人： Masanori Kimura

发明人： Masanori Kimura

IPC分类号： C30B15/00 ,  C30B21/06

CPC分类号： C30B15/14 ,  Y10S117/917 ,  Y10T117/10 ,  Y10T117/1052

摘要： By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible, a single crystal is pulled or the raw material is additionally introduced with heating by the heater surrounding the crucible and the subsidiary heating means when the amount of the raw material melt in the crucible becomes a limited amount. Thus, there is provided a method for growing a single crystal at a high yield while preventing solidification of melt raw material decreased to a limited amount without affecting crystal quality, durability of crucible or the like even when a crucible having a large diameter is used.

摘要翻译： 通过利用Czochralski法制造单晶的晶体拉制装置，其至少包括要填充原料的坩埚，围绕坩埚的加热器和设置在坩埚下方的辅助加热装置，单晶被拉出或 当在坩埚中熔化的原料量变成有限量时，原料通过围绕坩埚和辅助加热装置的加热器被加热引入。 因此，即使当使用具有大直径的坩埚时，也提供了一种以高产率生长单晶的方法，同时防止熔融原料的固化降低到有限的量，而不影响晶体质量，坩埚等的耐久性。

公开(公告)号：US06599360B2

公开(公告)日：2003-07-29

申请号：US09936920

申请日：2001-09-20

申请人： Makoto Iida ,  Masanori Kimura

发明人： Makoto Iida ,  Masanori Kimura

IPC分类号： C30B1502

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  G01N2033/0095 ,  H01L21/3225

摘要： According to the present invention, there are provided a silicon wafer, wherein an epi-layer is not formed on a surface, and number of LSTDs having a size of 50 nm or more existing in a surface layer portion is 0.24 number/cm2 or less; a method for determining production conditions of a silicon single crystal, which comprises pulling nitrogen-doped silicon single crystals by the CZ method while varying V/G and/or PT, producing silicon wafers from the silicon single crystals, subjecting the silicon wafers to a heat treatment, determining acceptability of the wafers based on a predetermined characteristic value, obtaining correlation between the acceptability and V/G and PT, and determining production conditions based on the correlation; and a method for producing a silicon wafer comprising pulling a silicon single crystal so that V/G and PT should be lower than V/G and shorter than PT that are uniquely defined by predetermined nitrogen concentration and oxygen concentration in the silicon single crystal, conditions of heat treatment to which the silicon wafer is subjected, and grown-in defect density of the silicon wafer. According to the present invention, a nitrogen-doped annealed wafer showing a low defect density even under severe examination conditions and little fluctuation thereof depending on the production condition is produced.

摘要翻译： 根据本发明，提供了一种硅晶片，其中在表面上不形成外延层，存在于表层部分中的具有50nm以上的尺寸的LSTD的数量为0.24个/ cm 2以下 ; 一种用于测定硅单晶的生产条件的方法，其包括在改变V / G和/或PT的同时通过CZ方法拉氮掺杂的硅单晶，从硅单晶产生硅晶片，将硅晶片 热处理，基于预定特征值确定晶片的可接受性，获得可接受性与V / G和PT之间的相关性，并且基于相关性确定生产条件; 以及用于制造硅晶片的方法，其包括拉制单晶硅，使得V / G和PT应低于由单晶中的预定氮浓度和氧浓度唯一限定的V / G并且短于PT，条件 硅晶片经受的热处理和硅晶片的成长缺陷密度。 根据本发明，即使在严格的检查条件下，即使在生产条件下也产生不大的波动的氮掺杂退火晶片。

公开(公告)号：US06565507B2

公开(公告)日：2003-05-20

申请号：US09950653

申请日：2001-09-13

申请人： Kouichi Kamata ,  Haruo Akiba ,  Masanori Kimura ,  Kouichi Muraki

发明人： Kouichi Kamata ,  Haruo Akiba ,  Masanori Kimura ,  Kouichi Muraki

IPC分类号： A61B100

CPC分类号： B29D23/001 ,  A61B1/018 ,  B29C47/0021 ,  B29C47/0023 ,  B29C47/0026 ,  B29C47/0038 ,  B29C47/0064 ,  B29C47/021 ,  B29C47/065 ,  B29C53/385 ,  B29C53/50 ,  B29C53/562 ,  B29C53/68 ,  B29C61/006 ,  B29C2793/009 ,  B29K2023/06 ,  B29K2027/12 ,  B29K2027/18 ,  B29K2075/00 ,  B29K2077/00 ,  B29K2105/0836 ,  B29K2305/00 ,  B29K2705/00 ,  B29K2995/0049 ,  B29K2995/0067 ,  B29K2995/0073 ,  B29L2009/00 ,  B29L2023/007 ,  F16L11/085

摘要： A flexible tube having a laminated multi-layer structure including an outer layer composed of a main tube body layer formed of thermoplastic synthetic resin in a predetermined thickness and a reinforcing layer provided on the inner side of the main tube body layer, and an inner layer formed of a thin film sheet of air tight and low friction material. The inner layer is formed by rolling an elongated strip of a thin film sheet into a tubular form such that opposite lateral sides of the thin film sheet are overlapped one on the other to provide a thick wall portion extending longitudinally of and at one angular position of the inner layer.

公开(公告)号：US06544332B1

公开(公告)日：2003-04-08

申请号：US09830386

申请日：2001-04-26

申请人： Makoto Iida ,  Masanori Kimura ,  Hiroshi Takeno ,  Yoshinori Hayamizu

发明人： Makoto Iida ,  Masanori Kimura ,  Hiroshi Takeno ,  Yoshinori Hayamizu

IPC分类号： C30B1504

CPC分类号： C30B15/206 ,  C30B29/06

摘要： A method for producing a silicon single crystal in accordance with CZ method, characterized in that before producing the crystal having a predetermined kind and concentration of impurity, another silicon single crystal having the same kind and concentration of impurity as the crystal to be produced is grown to thereby determine an agglomeration temperature zone of grown-in defects thereof, and then based on the temperature, growth condition of the crystal to be produced or temperature distribution within a furnace of a pulling apparatus is set such that a cooling rate of the crystal for passing through the agglomeration temperature zone is a desired rate to thereby produce the silicon single crystal. A silicon single crystal produced in accordance with the above method, characterized in that a density of LSTD before subjecting to heat treatment is 500 number/cm2 or more and the average defect size is 70 nm or less. The present invention provides by CZ method a silicon single crystal and a silicon wafer wherein the dispersion in size and density of grown-in defects is suppressed effectively and the quality is stabilized regardless of the variety of crystals, and a producing method therefor.

摘要翻译： 根据CZ方法制造单晶硅的方法，其特征在于，在制造具有预定种类和浓度的杂质的晶体之前，生长具有与待生产的晶体相同种类和杂质浓度的另一硅单晶 从而确定其生长缺陷的附聚温度区，然后基于温度，将要生产的晶体的生长条件或拉制装置的炉内的温度分布设定为使得用于 通过附聚温度区域是所需的速率，从而产生硅单晶。 根据上述方法制备的硅单晶，其特征在于，在热处理之前的LSTD的密度为500个数/ cm 2以上，平均缺陷尺寸为70nm以下。 本发明通过CZ法提供了硅单晶和硅晶片，其中无论晶体的种类如何，有效地抑制了生长缺陷的尺寸和密度的分散，并且质量稳定，并且其制造方法。

公开(公告)号：US06364947B1

公开(公告)日：2002-04-02

申请号：US09661985

申请日：2000-09-14

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B1500

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface ±5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference &Dgr;G (=Ge−Gc) is not greater than 5° C./cm, where Ge is a temperature gradient (° C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (° C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420° C. and 1350° C. or between a melting point of silicon and 1400° C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置范围±5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在硅单晶生长期间，控制炉温，使得温度梯度差DELTAG（= Ge-Gc）不大 其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm）， 在晶体的固 - 液界面附近，在1420℃和1350℃之间的晶体下降温度区域中，或在硅熔点和1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。