公开(公告)号：US5866564A

公开(公告)日：1999-02-02

申请号：US889542

申请日：1997-07-08

申请人： Isao Kawamoto ,  Rokuro Endo ,  Masao Miyauchi ,  Katsuya Ishikawa ,  Eiji Nakayama ,  Hiroshi Yasuda ,  Satoshi Ohya ,  Yukio Utsui ,  Katsuhiko Watanabe

发明人： Isao Kawamoto ,  Rokuro Endo ,  Masao Miyauchi ,  Katsuya Ishikawa ,  Eiji Nakayama ,  Hiroshi Yasuda ,  Satoshi Ohya ,  Yukio Utsui ,  Katsuhiko Watanabe

IPC分类号： C07D477/20 ,  C07D487/04 ,  A61K31/40

CPC分类号： C07D477/20

摘要： Compound of formula (I): ##STR1## wherein R.sup.1 is hydrogen, C.sub.1 -C.sub.6 alkyl, C.sub.2 -C.sub.6 alkenyl, C.sub.2 -C.sub.6 alkynyl or --C(.dbd.NH)R.sup.0 where R.sup.0 is hydrogen or C.sub.1 -C.sub.6 alkyl;A is ##STR2## R.sup.2 is hydrogen, C.sub.1 -C.sub.6 alkyl, C.sub.2 -C.sub.6 alkenyl, C.sub.2 -C.sub.6 alkynyl or --C(.dbd.NH)R.sup.6 where R.sup.6 is hydrogen, C.sub.1 -C.sub.6 alkyl or C.sub.3 -C.sub.7 cycloalkyl; R.sup.3 and R.sup.4 are independently hydrogen, C.sub.1 -C.sub.6 alkyl, halogen, hydroxy, carboxy, cyano, --CO.NR.sup.a R.sup.b, --OCO.NR.sup.a R.sup.b or --NR.sup.a R.sup.b, where R.sup.a and R.sup.b are independently hydrogen or C.sub.1 -C.sub.6 alkyl; R.sup.20", R.sup.21', and R.sup.22" are independently hydrogen or C.sub.1 -C.sub.6 alkyl or R.sup.20" and R.sup.21" or R.sup.20" and R.sup.22" together form a heterocyclic group; R.sup.23" and R.sup.24" are independently hydrogen, halogen or C.sub.1 -C.sub.6 alkyl; n is 1, 2 or 3; and n.sup.3" is 1, 2 or 3. The compounds are antibiotics which are resistant to dehydropeptidase I, and are useful for the treatment of microbial infections.

摘要翻译： 式（I）化合物：其中R 1是氢，C 1 -C 6烷基，C 2 -C 6烯基，C 2 -C 6炔基或-C（= NH）R 0）其中R 0是氢或C 1 -C 6烷基; （C 1 -C 6）烷基，C 2 -C 6烯基，C 2 -C 6炔基或-C（= NH）R 6，其中R 6是氢，C 1 -C6烷基或C3-C7环烷基; R 3和R 4独立地是氢，C 1 -C 6烷基，卤素，羟基，羧基，氰基，-CO.RRRRb，-OCO，NR a R b或-NR a R b，其中R a和R b独立地是氢或C 1 -C 6烷基; R 20“，R 21'和R 22”独立地是氢或C 1 -C 6烷基或R 20“，R 21”或R 20“和R 22”一起形成杂环基; R 23“和R 24”独立地是氢，卤素或C 1 -C 6烷基; n为1,2或3; 和n3“是1,2或3.化合物是抗脱水肽酶I的抗生素，并且可用于治疗微生物感染。

公开(公告)号：US5854490A

公开(公告)日：1998-12-29

申请号：US680960

申请日：1996-07-16

申请人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda

发明人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda

IPC分类号： H01J37/07 ,  H01J37/065 ,  H01J37/24 ,  H01J37/30 ,  H01J37/63

CPC分类号： H01J37/241 ,  H01J37/065 ,  H01J2237/3175

摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.

公开(公告)号：US5849436A

公开(公告)日：1998-12-15

申请号：US512912

申请日：1995-08-09

申请人： Akio Yamada ,  Hiroshi Yasuda

发明人： Akio Yamada ,  Hiroshi Yasuda

IPC分类号： G21K5/04 ,  G03F7/16 ,  G03F7/20 ,  H01J37/302 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/2037 ,  H01J37/3026 ,  H01L21/0279 ,  H01J2237/31764 ,  H01J2237/31767 ,  H01J2237/31776 ,  H01J2237/31788

摘要： A block mask for making a charged particle beam exposure using block exposure includes a plurality of block mask patterns respectively including repeating patterns, where the block mask patterns are arranged in an order dependent on an exposure sequence, at least one first block mask pattern group made up of arbitrary ones of the block mask patterns which are arranged in a predetermined direction, and at least one second block mask pattern group made up of the arbitrary ones of the block mask patterns which are arranged in a direction opposite to the predetermined direction. The second block mask pattern group is arranged adjacent to the first block mask pattern group.

摘要翻译： 使用块曝光进行带电粒子束曝光的块掩模包括分别包括重复图案的多个块掩模图案，其中块掩模图案以依赖于曝光序列的顺序排列，至少一个第一块掩模图案组 沿预定方向布置的块掩模图案中的任意一个块掩模图案，以及由沿与预定方向相反的方向布置的任意块掩模图案组成的至少一个第二块掩模图案组。 第二块掩模图案组被布置为与第一块掩模图案组相邻。

公开(公告)号：US5824437A

公开(公告)日：1998-10-20

申请号：US685958

申请日：1996-07-22

申请人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

发明人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

IPC分类号： G03F1/20 ,  H01J37/317 ,  G03F9/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31788

摘要： A mask for exposure of an object by an electron beam is formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has one aperture or plural, spaced apertures formed respectively therein, having a total area size, selected to be smaller than the area size of the aperture defining region in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.

摘要翻译： 用于通过电子束曝光物体的掩模由阻挡电子束并且其中限定有多个图案曝光块的材料板形成，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形 的电子束通过其中以使物体上的相应图案曝光。 每个孔限定区域具有根据控制通过其中的电子束的电流水平而分别形成的具有总面积尺寸的一个孔径或多个间隔开的孔，其选择为小于孔限定区域的面积尺寸， 同时减少通过图案曝光块的每个孔限定部分的孔或孔的电子束的库仑相互作用。

公开(公告)号：US5721432A

公开(公告)日：1998-02-24

申请号：US670256

申请日：1996-06-20

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形 转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间 在晶片区域和芯片区域。 为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

公开(公告)号：US5683099A

公开(公告)日：1997-11-04

申请号：US617599

申请日：1996-03-19

申请人： Masaru Ido ,  Yuji Kuriyama ,  Hiroshi Yasuda ,  Takumi Narita

发明人： Masaru Ido ,  Yuji Kuriyama ,  Hiroshi Yasuda ,  Takumi Narita

IPC分类号： B60R21/20 ,  B60R21/203 ,  B60R21/217 ,  B60R21/16

CPC分类号： B60R21/217

摘要： In the air bag device, a bag holder, a retainer, and an air bag can be assembled together into a united body by use of bolts and nuts which are provided so as to extend from a retainer formed from a metal plate. At a plurality of positions near a peripheral edge of an opening formed in the air bag, there are formed insertion holes. In the retainer, there are provided a plurality of securing projections which are inserted through associated insertion holes and into associated securing holes formed in the bag holder. Each of the securing projections is cut and raised from a main body of the retainer and has a semi-cylindrical shape with the peripheral wall thereof raised from the retainer and a semi-arc shaped outer peripheral surface of the peripheral wall faces the opening of the air bag.

摘要翻译： 在气囊装置中，袋保持器，保持器和气囊可以通过使用螺栓和螺母组装在一起成为一体，该螺栓和螺母设置成从金属板形成的保持器延伸。 在形成在安全气囊中的开口的周缘附近的多个位置形成有插通孔。 在保持器中，设置有多个固定突起，其通过相关联的插入孔插入到形成在袋保持器中的相关联的固定孔中。 每个固定突起从保持器的主体被切割和升起，并且具有半圆柱形状，其周壁从保持器上升，并且周壁的半弧形外周表面面向 气囊

公开(公告)号：US5590048A

公开(公告)日：1996-12-31

申请号：US71262

申请日：1993-06-04

申请人： Tomohiko Abe ,  Hiroshi Yasuda ,  Kiichi Sakamoto ,  Yoshihisa Oae

发明人： Tomohiko Abe ,  Hiroshi Yasuda ,  Kiichi Sakamoto ,  Yoshihisa Oae

IPC分类号： H01J37/302 ,  G06F17/50 ,  G06K9/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J2237/0458 ,  H01J2237/31776

摘要： In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.

摘要翻译： 在应用于具有包括具有不同形状的多个透明统计数据的块掩模的带电粒子束曝光系统的块曝光图案提取系统中，比较器单元将连接输入曝光图案的顶点之一与其他顶点的第一矢量与 将单位块曝光图案的顶点之一的参考点连接到单位块曝光图案的其他顶点的第二矢量。 确定单元确定第一矢量是否与第二矢量一致。 当确定单元确定第一向量与第二向量一致时，提取单元提取输入的曝光图案作为单位块曝光图案。

公开(公告)号：US5393769A

公开(公告)日：1995-02-28

申请号：US24827

申请日：1993-03-01

申请人： Sadao Oida ,  Takeo Miyaoka ,  Yawara Tajima ,  Toshiyuki Konosu ,  Noriko Takeda ,  Hiroshi Yasuda

发明人： Sadao Oida ,  Takeo Miyaoka ,  Yawara Tajima ,  Toshiyuki Konosu ,  Noriko Takeda ,  Hiroshi Yasuda

IPC分类号： C07D249/08 ,  C07D401/12 ,  C07D521/00 ,  A61K31/41

CPC分类号： C07D231/12 ,  C07D233/56 ,  C07D249/08

摘要： Compounds of formula (I): ##STR1## in which: Ar is optionally substituted phenyl; R.sup.1 is alkyl; R.sup.2 is substituted alkyl or substituted cycloalkyl; and n is 0, 1 or 2; and pharmaceutically acceptable salts and esters thereof have valuable anti-fungal properties and can be used for pharmaceutical and veterinary treatment. Methods of preparing these compounds are also provided.

摘要翻译： 式（I）化合物：其中：Ar为任选取代的苯基; R1是烷基; R2是取代的烷基或取代的环烷基; 且n为0,1或2; 及其药学上可接受的盐和酯具有有价值的抗真菌性质，并可用于药物和兽医治疗。 还提供了制备这些化合物的方法。

公开(公告)号：US5369282A

公开(公告)日：1994-11-29

申请号：US98875

申请日：1993-07-29

申请人： Soichiro Arai ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae

发明人： Soichiro Arai ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae

IPC分类号： G03F7/20 ,  H01J37/317 ,  H01J37/302

CPC分类号： G03F7/70383 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/31761 ,  H01J2237/31776

摘要： An electron beam exposure process includes a step of producing a plurality of electron beam elements from a single electron beam by shaping and radiating the plurality of electron beam elements on a substrate. The exposure is achieved in a plurality of times with respective electron beam patterns by means of different sets of electron beam elements, wherein the electron beam elements of different sets are produced simultaneously and deflected simultaneously so as to scan the substrate consecutively. The electron beam elements in one set are offset from corresponding electron beam elements of the other set by a pitch of M/N wherein N represents the number of the electron beam sets and M is an integer smaller than N.

摘要翻译： 电子束曝光工艺包括通过在衬底上成形和辐射多个电子束元件从单个电子束产生多个电子束元件的步骤。 通过不同组的电子束元件，利用各种电子束图案多次实现曝光，其中同时产生不同组的电子束元件并同时偏转，以便连续地扫描衬底。 一组中的电子束元件以M / N的间距偏离另一组的相应电子束元素，其中N表示电子束组的数量，M是小于N的整数。

公开(公告)号：US5278419A

公开(公告)日：1994-01-11

申请号：US925110

申请日：1992-08-06

申请人： Yasushi Takahashi ,  Hiroshi Yasuda

发明人： Yasushi Takahashi ,  Hiroshi Yasuda

IPC分类号： G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31769

摘要： A method for writing a pattern on an object by a charged particle beam comprises the steps of: dividing a pattern to be written on the object into a plurality of pattern blocks that cause a proximity effect with each other; determining a pattern density for each of said pattern blocks; selecting a specific pattern block as a reference pattern block; setting a dose level of exposure of the charged particle beam to a reference dose level such that the reference pattern block is exposed with a predetermined total dose level which includes the contribution of the exposure by the charged particle beam and the contribution of the exposure by the backscattered charged particles; exposing the plurality of pattern blocks including the reference pattern block by the charged particle beam with the reference dose level; and exposing those pattern blocks that have the pattern density smaller than the pattern density of the reference pattern block by a defocused charged particle beam with a total dose level set such that the total dose level for those pattern blocks is substantially identical with the total dose level of the reference pattern block.

摘要翻译： 通过带电粒子束在物体上写入图案的方法包括以下步骤：将要写入对象的图案划分成彼此相互接近效应的多个图案块; 确定每个所述图案块的图形密度; 选择特定图案块作为参考图案块; 将带电粒子束的剂量水平设置为参考剂量水平，使得参考图案块以预定的总剂量水平曝光，该预定总剂量水平包括通过带电粒子束的曝光的贡献以及曝光的贡献 反向散射带电粒子; 通过具有参考剂量水平的带电粒子束曝光包括参考图案块的多个图案块; 并且将具有小于参考图案块的图案密度的图案密度的那些图案块通过设定为使得这些图案块的总剂量水平与总剂量水平基本相同的总剂量水平的散焦带电粒子束曝光 的参考图案块。