公开(公告)号：US20070024146A1

公开(公告)日：2007-02-01

申请号：US11489597

申请日：2006-07-20

申请人： Shih Huang ,  Kun Lee ,  Lee Chen ,  Wen-Shi Huang

发明人： Shih Huang ,  Kun Lee ,  Lee Chen ,  Wen-Shi Huang

IPC分类号： H02K1/00 ,  H02K23/02 ,  H02K15/00

CPC分类号： H02K3/28 ,  H02K15/095 ,  Y10T29/49009 ,  Y10T29/49073

摘要： A winding method of a motor stator comprises the steps of serially winding a wire on a plurality of odd poles along a first direction; pulling out a common terminal from the wire to serve as a first power terminal; serially winding the wire on a plurality of even poles along a second direction; and knotting a start and an end of the wire to form a second power terminal. A single-phase motor comprises a stator and a rotor. The stator has a plurality of poles and a wire, and the rotor cooperates with the stator. The wire serially winds odd poles of the plurality of poles along a first direction and then serially winds even poles of the plurality of poles along a second direction.

摘要翻译： 电动机定子的绕线方法包括沿着第一方向将线串联地缠绕在多个奇数极上的步骤; 从电线拔出公共端子作为第一个电源端子; 沿着第二方向将线串联缠绕在多个偶极上; 并打结线的开始和结束以形成第二电源终端。 单相电动机包括定子和转子。 定子具有多个极和线，并且转子与定子配合。 线沿着第一方向串联地缠绕多个极的奇数极，然后沿着第二方向串联多个极的偶极。

公开(公告)号：US20050224456A1

公开(公告)日：2005-10-13

申请号：US10517764

申请日：2003-06-27

申请人： Lee Chen ,  Audunn Ludviksson

发明人： Lee Chen ,  Audunn Ludviksson

IPC分类号： B44C1/22 ,  B81C1/00 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC分类号： C23F1/12 ,  B81C1/00492 ,  B81C2201/0143 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76838

摘要： A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).

摘要翻译： 用于干蚀刻用于制造集成电路的纯Cu和Cu层（220,310）的方法和装置。 本发明使用具有高动能（340）的O原子的定向光束氧化含Cu和Cu的层，以及与氧化的Cu（360）反应形成挥发性含Cu蚀刻产物的蚀刻试剂（370） （390）。 本发明允许根据图案化的硬掩模或光致抗蚀剂（230,330）对纯Cu和Cu层进行低温，各向异性蚀刻。

公开(公告)号：US20050120960A1

公开(公告)日：2005-06-09

申请号：US10506237

申请日：2003-03-11

申请人： Lee Chen

发明人： Lee Chen

IPC分类号： H05H1/46 ,  C23C16/00 ,  H01J37/20 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/67248 ,  H01J37/20 ,  H01J37/32522 ,  H01J37/32642 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/68735

摘要： An improved substrate holder comprises an electrode supporting a focus ring and a substrate, an insulating member surrounding the electrode and focus ring, a ground member surrounding the insulating member, and a focus ring surrounding the substrate. The focus ring provides a RF impedance substantially equivalent to a RF impedance of the substrate. A method of processing a substrate utilizing the improved substrate holder reduces arcing between the edge of the substrate and the focus ring. The method comprises the steps of placing the focus ring on the electrode, placing the substrate on the electrode and processing the substrate. Additionally, a method of controlling a focus ring temperature and a substrate temperature utilizing the improved substrate holder comprises the steps of placing the focus ring on the electrode, placing the substrate on the electrode, clamping the focus ring and the substrate to the electrode using an electrostatic clamp, supplying heat transfer gas(es) to the space residing between the focus ring and the electrode, and the space between the substrate and the electrode, and controlling the temperature of the electrode.

摘要翻译： 改进的衬底保持器包括支撑聚焦环和衬底的电极，围绕电极和聚焦环的绝缘构件，围绕绝缘构件的接地构件和围绕衬底的聚焦环。 聚焦环提供基本上等于衬底的RF阻抗的RF阻抗。 利用改进的基板保持器处理基板的方法减少了基板的边缘和聚焦环之间的电弧。 该方法包括以下步骤：将聚焦环放置在电极上，将衬底放置在电极上并处理衬底。 此外，利用改进的衬底保持器来控制聚焦环温度和衬底温度的方法包括以下步骤：将聚焦环放置在电极上，将衬底放置在电极上，将聚焦环和衬底夹持到电极上，使用 将静电夹持器，向聚焦环和电极之间的空间供给传热气体，以及衬底和电极之间的空间，以及控制电极的温度。

公开(公告)号：US20050118353A1

公开(公告)日：2005-06-02

申请号：US10853026

申请日：2004-05-25

申请人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama

发明人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/324 ,  H01L21/336 ,  H01L21/461 ,  H05H1/24

CPC分类号： H01L21/31122

摘要： A method for heating a substrate between a first process and a second process using a plasma is described. The heating method comprises thermally isolating the substrate on the substrate holder by removing the backside supply of a heat transfer gas and removing the clamping force. Furthermore, an inert gas, such as a Noble gas, is introduced to the plasma processing system and a plasma is ignited. The substrate is exposed to the inert plasma for a period of time sufficient to elevate the temperature of the substrate from a first temperature (i.e., typically less than 100° C.) to a second temperature (i.e., typically of order 400° C.).

摘要翻译： 描述了使用等离子体在第一工艺和第二工艺之间加热衬底的方法。 加热方法包括通过去除传热气体的背面供应并去除夹紧力来热隔离衬底保持器上的衬底。 此外，诸如Noble气体的惰性气体被引入到等离子体处理系统中，并且等离子体被点燃。 将衬底暴露于惰性等离子体一段足以将衬底的温度从第一温度（即通常小于100℃）提升至第二温度的时间（即典型地为400℃） ）。

公开(公告)号：US06852584B1

公开(公告)日：2005-02-08

申请号：US10756759

申请日：2004-01-14

申请人： Lee Chen ,  Hongyu Yue ,  Hiromitsu Kambara

发明人： Lee Chen ,  Hongyu Yue ,  Hiromitsu Kambara

IPC分类号： H01L21/28 ,  H01L21/3213 ,  H01L21/336

CPC分类号： H01L21/32134 ,  H01L21/28123 ,  H01L21/32136 ,  H01L21/32137

摘要： A method and processing tool are provided for trimming a gate electrode structure containing a gate electrode layer with a first dimension. A reaction layer is formed through reaction with the gate electrode structure. The reaction layer is the selectively removed from the unreacted portion of the gate electrode structure by chemical etching, thereby forming a trimmed gate electrode structure with a second dimension that is smaller than the first dimension. The trimming process can be carried out under process conditions where formation of the reaction layer is substantially self-limiting. The trimming process can be repeated to further reduce the dimension of the gate electrode structure.

摘要翻译： 提供了一种用于修整含有第一尺寸的栅电极层的栅电极结构的方法和处理工具。 通过与栅电极结构反应形成反应层。 反应层通过化学蚀刻从栅电极结构的未反应部分选择性地除去，从而形成具有小于第一尺寸的第二尺寸的修整栅电极结构。 修整过程可以在反应层的形成基本上是自限制的工艺条件下进行。 可以重复修整过程以进一步减小栅电极结构的尺寸。

公开(公告)号：US5468955A

公开(公告)日：1995-11-21

申请号：US359974

申请日：1994-12-20

申请人： Lee Chen ,  Dragan Podlesnik ,  Akihisa Sekiguchi

发明人： Lee Chen ,  Dragan Podlesnik ,  Akihisa Sekiguchi

IPC分类号： H05H3/02

CPC分类号： H05H3/02

摘要： The discovery that a location exists in a plasma sheath surrounding a plasma near a plasma confining surface where recombination of ions and electrons is favored due to Coulombic interaction is exploited to provide filtration of flux components and enhance neutralization of ions extracted from the plasma. By engineering of the dimensions of apertures in an apertured plate in accordance with plasma conditions and differential pumping, a high quality, high flux neutral beam can be developed wherein the particle energies may be scalable from very low levels below that which causes crystal lattice damage in semiconductor materials to very high levels. The production of a beam of neutral beam of good directivity and well-defined geometry is further exploited to provide predictability in plasma chemistry reactions and to form reactants in-situ for semiconductor processing. In-situ production of minute quantities of hydrofluoric acid for interface tailoring provides a "dry", high vacuum compatible alternative to wet etch processes.

摘要翻译： 发现位于等离子体围绕等离子体周围的等离子体护套中的发现，其中离子和电子的重组由于库仑相互作用而有利于提供过量的助熔剂组分并增强从等离子体中提取的离子的中和。 通过根据等离子体条件和差分泵送工程化孔径的尺寸，可以开发出高质量的高通量中性束，其中粒子能量可以从低于导致晶格损伤的低水平的可伸缩性 半导体材料达到非常高的水平。 进一步开发了具有良好方向性和明确定义的几何形状的中性束束的生产，以提供等离子体化学反应中的可预测性并在半导体处理中原位形成反应物。 用于界面裁缝的微量氢氟酸的原位生产为湿法蚀刻工艺提供了“干”，高真空兼容的替代方案。

公开(公告)号：US4671849A

公开(公告)日：1987-06-09

申请号：US730976

申请日：1985-05-06

申请人： Lee Chen ,  Gangadhara S. Mathad

发明人： Lee Chen ,  Gangadhara S. Mathad

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/308 ,  C23F1/02

CPC分类号： H01L21/31116

摘要： A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the concentration of a reactive species in an etchant gas is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope. The final slope of the opening formed by this method is independent of the initial slopes of the images developed in the photoresist mask.

摘要翻译： 一种用于精确地控制蚀刻在材料层（例如绝缘层）中的开口的轮廓的方法。 在一个实施方案中，其中二氧化硅层是通过光致抗蚀剂掩模进行反应离子蚀刻，蚀刻剂气体中的反应性物质的浓度在蚀刻过程中改变以改变开口的斜率，开口的上侧壁部分具有 开口的浅斜面和下侧壁部分具有陡峭的斜坡。 通过该方法形成的开口的最终斜率与在光致抗蚀剂掩模中显影的图像的初始斜率无关。

公开(公告)号：US10395903B2

公开(公告)日：2019-08-27

申请号：US15983532

申请日：2018-05-18

申请人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

发明人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC分类号： H01J37/32 ,  C23C16/50 ,  H01J37/30

摘要： A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US20180269041A1

公开(公告)日：2018-09-20

申请号：US15983532

申请日：2018-05-18

申请人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

发明人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC分类号： H01J37/32 ,  H01J37/30

CPC分类号： H01J37/32899 ,  H01J37/30 ,  H01J37/32082 ,  H01J37/3233

摘要： A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US09087677B2

公开(公告)日：2015-07-21

申请号：US13433078

申请日：2012-03-28

申请人： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

发明人： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC分类号： H01J3/14 ,  H01J37/32 ,  H01J49/48 ,  H05H1/00

CPC分类号： H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

摘要： A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.

摘要翻译： 一种产生用离子能量分析仪表示的用于确定等离子体的离子能量分布的信号的方法。 用于确定等离子体的离子能量分布的离子能量分析器包括与第一格栅隔开并与之隔离的第一格栅和第二栅格。 第一栅格形成离子能量分析器的第一表面并定位成暴露于等离子体。 第一栅格包括第一多个开口，其尺寸被设计成小于等离子体的德拜长度。 电压源和离子电流计可操作地耦合到第二栅极，第二栅极被配置为测量离子收集器上的离子通量并传输表示所测量的离子通量的信号。 该方法包括相对于第一格栅选择性地和可变地偏置第二格栅。