Defective Graphene-Based Memristor
    72.
    发明申请
    Defective Graphene-Based Memristor 有权
    有缺陷的石墨烯忆阻器

    公开(公告)号:US20110240947A1

    公开(公告)日:2011-10-06

    申请号:US12754300

    申请日:2010-04-05

    IPC分类号: H01L47/00

    摘要: A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.

    摘要翻译: 基于石墨烯的忆阻器包括第一电极,与第一电极相邻的有缺陷的石墨烯层,包含与缺陷石墨烯层相邻的多个离子的忆阻材料,与该阻滞材料相邻的第二电极以及产生电 在第一和第二电极之间。 在电场的影响下,忆阻材料中的离子在第二电极和缺陷石墨烯层之间形成离子传导通道。

    Photonic Device And Method Of Making Same Using Nanowires
    73.
    发明申请
    Photonic Device And Method Of Making Same Using Nanowires 有权
    光子器件及其使用纳米线的方法

    公开(公告)号:US20110168256A1

    公开(公告)日:2011-07-14

    申请号:US12244939

    申请日:2008-10-03

    摘要: A photonic device, a method of making the device and a nano-scale antireflector employ a bramble of nanowires. The photonic device and the method include a first layer of a microcrystalline material provided on a substrate surface and a second layer of a microcrystalline material provided on the substrate surface horizontally spaced from the first layer by a gap. The photonic device and the method further include, and the nano-scale antireflector includes, the bramble of nanowires formed between the first layer and the second layer. The nanowires have first ends integral to crystallites in each of the first layer and the second layer. The nanowires of the bramble extend into the gap from each of the first layer and the second layer.

    摘要翻译: 光子器件,制造该器件的方法和纳米尺度抗反射器采用荆棘的纳米线。 光子器件和方法包括设置在衬底表面上的微晶材料的第一层和设置在与第一层水平间隔开的间隙的衬底表面上的微晶材料的第二层。 该光子器件和该方法还包括纳米级抗反射器,其包括在第一层和第二层之间形成的纳米线的荆棘。 纳米线具有与第一层和第二层中的每一个中的微晶成一体的第一端。 荆棘的纳米线从第一层和第二层中的每一层延伸到间隙中。

    Electronic system having free space optical elements
    75.
    发明授权
    Electronic system having free space optical elements 有权
    具有自由空间光学元件的电子系统

    公开(公告)号:US07869714B2

    公开(公告)日:2011-01-11

    申请号:US11835833

    申请日:2007-08-08

    IPC分类号: H04B10/00

    摘要: An electronic system includes a first circuit board having a first optical element and a second circuit board having a second optical element positioned to electronically communicate with the first optical element over free space. The system also includes a cold plate having openings positioned to enable the optical communications over free space is positioned between the first circuit board and the second circuit board. The system further includes a condenser and a fluid conduit containing a cooling fluid configured to absorb heat through the cold plate and to convey the heat to the condenser, where the fluid conduit connects the cold plate and the condenser.

    摘要翻译: 电子系统包括具有第一光学元件的第一电路板和具有第二光学元件的第二电路板,第二光学元件定位成在自由空间上与第一光学元件电连通。 该系统还包括一个具有开口的冷板,该开口定位成能够使自由空间中的光通信位于第一电路板和第二电路板之间。 该系统还包括冷凝器和流体导管,其包含冷却流体,冷却流体被配置为吸收热量通过冷板并将热量传递到冷凝器,其中流体导管连接冷板和冷凝器。

    Fresnel antenna
    76.
    发明授权
    Fresnel antenna 有权
    菲涅耳天线

    公开(公告)号:US07847236B2

    公开(公告)日:2010-12-07

    申请号:US11831275

    申请日:2007-07-31

    IPC分类号: G01D5/36

    摘要: A Fresnel antenna includes a plurality of Fresnel elements spaced to selectively attenuate electromagnetic waves having a predetermined wavelength, selected wavelengths, or range of wavelengths, and to concentrate electromagnetic waves having a predetermined wavelength, selected wavelengths, or range of wavelengths other than the attenuated wavelengths.

    摘要翻译: 菲涅耳天线包括多个菲涅尔元件,间隔开以选择性地衰减具有预定波长,选定波长或波长范围的电磁波,并且将具有预定波长,选定波长或不同于衰减波长的波长范围的电磁波集中 。

    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures
    77.
    发明授权
    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures 失效
    形成单晶金属硅化物纳米线和所得纳米线结构的方法

    公开(公告)号:US07829050B2

    公开(公告)日:2010-11-09

    申请号:US11707601

    申请日:2007-02-13

    IPC分类号: C01B21/068

    CPC分类号: C30B29/10 C30B29/60

    摘要: Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline-metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

    摘要翻译: 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中,公开了一种制造纳米线的方法。 在该方法中,形成许多纳米线前体部件。 每个纳米线前体构件包括基本单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中,公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。

    Compensation for distortion in contact lithography
    78.
    发明授权
    Compensation for distortion in contact lithography 失效
    接触光刻中的失真补偿

    公开(公告)号:US07613538B2

    公开(公告)日:2009-11-03

    申请号:US11492365

    申请日:2006-07-24

    摘要: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.

    摘要翻译: 接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。 接触光刻系统包括设计子系统,被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统,被配置为修改数据以补偿由分析子系统识别的一个或多个失真。

    Surface enhanced raman spectroscopy with periodically deformed SERS-active structure
    79.
    发明授权
    Surface enhanced raman spectroscopy with periodically deformed SERS-active structure 有权
    具有周期性变形的SERS活性结构的表面增强拉曼光谱

    公开(公告)号:US07609377B2

    公开(公告)日:2009-10-27

    申请号:US11796455

    申请日:2007-04-26

    IPC分类号: G01J3/44

    CPC分类号: G01N21/658

    摘要: An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. A SERS-active structure near which a plurality of analyte molecules is disposed is periodically deformed at an actuation frequency. A synchronous measuring device synchronized with the actuation frequency receives Raman radiation scattered from the analyte molecules and generates therefrom at least one Raman signal measurement.

    摘要翻译: 描述了用于促进表面增强拉曼光谱(SERS)的装置和相关方法。 多个分析物分子附近的SERS-活性结构以致动频率周期性地变形。 与致动频率同步的同步测量装置接收从分析物分子散射的拉曼辐射,并由此产生至少一个拉曼信号测量。