Testing bonding pads for chiplet systems

    公开(公告)号:US11749572B2

    公开(公告)日:2023-09-05

    申请号:US16877697

    申请日:2020-05-19

    Abstract: Systems, methods, circuits, and apparatus including computer-readable mediums for testing bonding pads in multi-die packages, e.g., chiplet systems. An example integrated circuit device includes an integrated circuit, first type bonding pads and second type bonding pads. Each of the first type bonding pads is electrically connected to the integrated circuit and configured to be electrically connected to a corresponding external integrated circuit device. Each of the second type bonding pads is configured to have no electrical connection with the corresponding external integrated circuit device. Each of the first type bonding pads is configured to be electrically connected to a corresponding one of the second type bonding pads. A number of the first type bonding pads can be larger than a number of the second type bonding pads. Each of the second type bonding pads can have a larger pad area for probing than each of the first type bonding pads.

    Flash memory system and flash memory device thereof

    公开(公告)号:US11455254B2

    公开(公告)日:2022-09-27

    申请号:US17118239

    申请日:2020-12-10

    Abstract: A flash memory system and a flash memory thereof are provided. The flash memory device includes a NAND flash memory and a control circuit. The NAND flash memory chip includes a cache memory, a page buffer; and an NAND flash memory array. The NAND flash memory array includes a plurality of pages, wherein each page includes a plurality of sub-pages, each sub-page has a sub-page length. The cache memory is composed of a plurality of sub cache and each sub cache corresponds to different pages of the NAND flash memory array. The page buffer is composed of a plurality of sub-page buffers and each sub-page buffer corresponds to different pages of the NAND flash memory array. The control circuit is coupled to the host and the NAND flash memory, and performs an access operation in units of one sub-page.

    Memory device, electronic device, and associated read method

    公开(公告)号:US11182302B2

    公开(公告)日:2021-11-23

    申请号:US16820795

    申请日:2020-03-17

    Abstract: A memory device, an electronic device, and associated read method are provided. The electronic device includes the memory device and a host device, which are electrically connected to each other. The memory device includes a NAND flash memory and a control logic. The NAND flash memory includes a first physical page, and the first physical page includes a plurality of first acquisition-units. The control logic is electrically connected to the NAND flash memory. The control logic receives a first-page address corresponding to the first physical page from a host device during a first page-read duration. Data stored at the plurality of first acquisition-units are respectively transferred to the host device during a second page-read duration.

    Fast transient response voltage regulator with pre-boosting

    公开(公告)号:US10860043B2

    公开(公告)日:2020-12-08

    申请号:US15658286

    申请日:2017-07-24

    Abstract: A circuit and a method for supplying a regulated voltage to a target circuit characterized by fast changes in current loading are described. A voltage regulator supplies the regulated voltage to an output node. The voltage regulator has a transistor having a gate, a first terminal connected to a power supply terminal, and a second terminal connected to the output node of the voltage regulator. A voltage transition generator is capacitively coupled to the gate of the transistor to increase or decrease its driving power upon occurrence of an event in the target circuit indicating a change in current loading. The change in current loading can have an expected magnitude, and the voltage transition can have a magnitude that is a function of an expected magnitude of the increase or decrease in current loading.

    Data recovery method to error correction code in memory

    公开(公告)号:US10725862B2

    公开(公告)日:2020-07-28

    申请号:US16029344

    申请日:2018-07-06

    Abstract: An integrated circuit comprising a memory array configured to store data chunks with corresponding error correction codes and error correction logic includes control logic that executes a recovery procedure to access a selected data chunk and corresponding error correction code from the memory array, to utilize the error correction logic to identify a location in the memory array of an error bit in the selected data chunk, and to access the identified location to write the corrected data. The recovery procedure is sequentially applied to a plurality of data chunks over a recovery operation region designated for a given instance of the recovery operation. Memory coupled with the control logic can store one or more recovery parameters that identify the recovery operation region in the memory.

    Memory with dynamic permissible bit write logic and method

    公开(公告)号:US10032511B1

    公开(公告)日:2018-07-24

    申请号:US15599350

    申请日:2017-05-18

    Abstract: For a memory array including a plurality of bit lines, and a set of write drivers having a number N members configured for connection in parallel to a selected set of N bit lines in the plurality of bit lines, write logic is coupled to the set of write drivers which enables a permissible number less than said number N of said members of the set of write drivers to apply a write pulse in parallel in a write operation. The write logic can dynamically assign permissible numbers to iterations in an iterative write sequence. A power source, such as charge pump circuitry, coupled to the set of write drivers can be utilized more efficiently in systems applying permissible bit write logic, enabling higher throughput or utilizing lower peak power.

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