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239 条记录 (耗时 0.031 秒)

    Polycrystalline diamond cutting tool and method of manufacturing the same
    72.
    发明授权
    Polycrystalline diamond cutting tool and method of manufacturing the same 失效
    多晶金刚石切割工具及其制造方法

    公开(公告)号：US5366522A

    公开(公告)日：1994-11-22

    申请号：US970798

    申请日：1992-11-03

    申请人： Tsutomu Nakamura ,  Yasuyuki Kanada ,  Tetsuo Nakai

    发明人： Tsutomu Nakamura ,  Yasuyuki Kanada ,  Tetsuo Nakai

    IPC分类号： B23B27/14 ,  C04B37/00 ,  C23C16/01 ,  C23C16/27 ,  B24D3/00

    CPC分类号： C04B37/026 ,  B23B27/145 ,  C23C16/01 ,  C23C16/271 ,  C23C16/272 ,  C23C16/274 ,  C23C16/277 ,  B23B2226/315 ,  B23B2240/08 ,  C04B2235/6586 ,  C04B2235/667 ,  C04B2235/963 ,  C04B2237/083 ,  C04B2237/12 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/30 ,  C04B2237/363 ,  C04B2237/401 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/82

    摘要： A polycrystalline diamond cutting tool comprises a tool material of polycrystalline diamond formed by low-pressure vapor deposition, which is bonded to a shank of cemented carbide through a brazing layer. The thickness of the polycrystalline diamond layer is set at 0.1 to 1.0 mm, while that of the brazing layer is set at 10 to 50 .mu.m. The brazing layer is made of a material having a melting point of 950.degree. to 1300.degree. C., which is in the form of an alloy layer containing at least one material selected from metals belonging to the groups IVa, Va, VIa and VIIa of the periodic table and carbides thereof and at least one material selected from Au, Ag, Cu, Pt, Pd and Ni. The polycrystalline diamond cutting tool is improved in heat resistance and tool strength. In order to improve deposition resistance of the cutting tool, the surface roughness of a tool rake face is set to be not more than 0.2 .mu.m in Rmax. A portion of the polycrystalline diamond layer up to a depth of 10 .mu.m from the rake face contains 99 to 100 atomic percent of carbon elements, and 99 to 100% of carbon atoms are diamond-bonded. A surface of the polycrystalline diamond layer which has been in contact with the substrate during formation of the polycrystalline diamond layer defines the rake face, whose surface is subjected to ion beam machining and thereafter treated in the atmosphere at a temperature of 300.degree. to 500.degree. C.

    摘要翻译： 多晶金刚石切割工具包括通过低压气相沉积形成的多晶金刚石的工具材料，其通过钎焊层粘合到硬质合金的柄上。 多晶金刚石层的厚度设定为0.1〜1.0mm，钎焊层的厚度设定为10〜50μm。 钎焊层由熔点为950℃至1300℃的材料制成，其为含有至少一种选自属于IVa，Va，VIa和VIIa族的金属的材料的合金层的形式 周期表及其碳化物和选自Au，Ag，Cu，Pt，Pd和Ni中的至少一种材料。 多晶金刚石切削工具的耐热性和刀具强度提高。 为了提高切削工具的耐沉积性，将工具前刀面的表面粗糙度设定为Rmax以下0.2μm以下。 距离前刀面10μm深的多晶金刚石层的一部分含有99〜100原子％的碳元素，99〜100％的碳原子金刚石键合。 在形成多晶金刚石层期间已经与基板接触的多晶金刚石层的表面限定了表面进行离子束加工的后刀面，然后在大气中在300〜500℃的温度下进行处理 C。

    Cryptographic communication method and system
    74.
    发明授权
    Cryptographic communication method and system 失效
    密码通信方式和系统

    公开(公告)号：US5144665A

    公开(公告)日：1992-09-01

    申请号：US658528

    申请日：1991-02-21

    申请人： Kazuo Takaragi ,  Yasuhiro Ishii ,  Tsutomu Nakamura

    发明人： Kazuo Takaragi ,  Yasuhiro Ishii ,  Tsutomu Nakamura

    IPC分类号： G06F21/20 ,  G09C1/00 ,  H04L9/08 ,  H04L9/30

    CPC分类号： H04L9/0838 ,  H04L9/302

    摘要： A cryptographic communication method and system for performing cryptographic communication between a host computer and a given one of plural terminals connected to the host computer by way of a communication network by using a data key designated by the given terminal or the host, wherein the host computer includes a cryptographic processing unit which includes a processing part for performing a public key cryptographic processing by using a pair of a public key and a private key and a common key cryptographic processing by using a common key, and an internal memory for storing master common key and master private key, a storage for recording as user private key information those data that result from the public key cryptographic processing performed by using a master public key on a plurality of user private keys which are in paired relation to user public keys held in the user terminals, respectively, and control means for performing input/output control between the storage and the cryptographic processing means.

    摘要翻译： 一种加密通信方法和系统，用于通过使用由给定终端或主机指定的数据密钥通过通信网络在主计算机与连接到主计算机的多个终端中给定的一个终端之间进行密码通信，其中主计算机 包括密码处理单元，该密码处理单元包括通过使用一对公共密钥和私人密钥以及通过使用公共密钥的公共密钥密码处理来执行公共密钥密码处理的处理部分和用于存储主公共密钥的内部存储器 和主专用密钥，用于作为用户私钥信息记录的存储用于通过使用主公开密钥执行的公开密钥加密处理的数据作为用户私钥信息记录在与保持在该用户私钥中的用户公钥成对的多个用户专用密钥上 用户终端和用于在存储器和c之间执行输入/输出控制的控制装置 加密处理手段。

    Solid state image sensor including static induction transistor with gate surrounding source and/or drain
    75.
    发明授权
    Solid state image sensor including static induction transistor with gate surrounding source and/or drain 失效
    固态图像传感器包括具有栅极周围源极和/或漏极的静态感应晶体管

    公开(公告)号：US4878120A

    公开(公告)日：1989-10-31

    申请号：US715641

    申请日：1985-03-25

    申请人： Kazuya Matsumoto ,  Tsutomu Nakamura

    发明人： Kazuya Matsumoto ,  Tsutomu Nakamura

    IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N5/335 ,  H04N5/347 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378 ,  H04N3/15

    CPC分类号： H01L27/14603 ,  H01L27/14679

    摘要： A disclosed solid state image pick-up element is constructed by a lateral static induction transistor in which source and drain regions thereof are arranged in a surface of a semiconductor layer formed on a substrate and a gate region for storing a light charge completely surrounds at least one of the source region and the drain region, whereby a source-drain current flows in parallel with the surface of the semiconductor layer. Moreover, a disclosed solid state image sensor utilizing the solid state image pick-up element mentioned above further includes a biasing means for inversely biasing the source and drain regions during a light signal storing period.

    摘要翻译： 所公开的固体摄像元件由横向静电感应晶体管构成，其中源极和漏极区域布置在形成在衬底上的半导体层的表面中，并且用于存储光电荷的栅极区域至少完全包围 源极区域和漏极区域之一，源极 - 漏极电流与半导体层的表面平行流动。 此外，利用上述固体摄像元件的公开的固态图像传感器还包括用于在光信号存储周期期间反向偏置源极和漏极区域的偏置装置。

    Semiconductor imaging device
    76.
    发明授权
    Semiconductor imaging device 失效
    半导体成像装置

    公开(公告)号：US4857981A

    公开(公告)日：1989-08-15

    申请号：US060545

    申请日：1987-06-11

    申请人： Kazuya Matsumoto ,  Tsutomu Nakamura

    发明人： Kazuya Matsumoto ,  Tsutomu Nakamura

    IPC分类号： H01L27/148 ,  H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3745

    CPC分类号： H01L27/14643

    摘要： A semiconductor imaging device includes lateral MOS static induction transistors including: a semiconductor layer formed on an insulating substrate or a high-resistance semiconductor substrate; and picture elements arranged in the form of a matrix over the surface of the semiconductor layer, the picture elements respectively constituted by lateral MOS static induction transistors each having a source region and a drain region both of which serve as main electrodes and a gate region for storing therein a photoelectric signal. Isolating regions are formed between the respective picture elements vertically or laterally on the matrix so that the picture elements which are adjacent to each other vertically or laterally share their source and drain regions with each other. Accordingly, each of the gate regions constitutes in combination with the adjacent source or drain region an equivalent unit picture element, thereby improving the density of picture-element formation.

    摘要翻译： 一种半导体成像装置，包括横向MOS静电感应晶体管，包括：形成在绝缘基板或高电阻半导体基板上的半导体层; 以及在半导体层的表面上以矩阵的形式布置的图像元素，分别由侧向MOS静电感应晶体管构成的像素分别具有用作主电极的源极区域和漏极区域，以及栅极区域 存储光电信号。 在矩阵上垂直或横向地形成各个像素之间的隔离区域，使得彼此相邻的像素彼此垂直或横向共享它们的源极和漏极区域。 因此，每个栅极区域与相邻的源极或漏极区域组合构成等效单位像素，从而提高了图像元素形成的密度。

    Crosslinkable copolymer composition and a method for the preparation thereof
    78.
    发明授权
    Crosslinkable copolymer composition and a method for the preparation thereof 失效
    可交联共聚物组合物及其制备方法

    公开(公告)号：US4722975A

    公开(公告)日：1988-02-02

    申请号：US800433

    申请日：1985-11-21

    申请人： Kunio Itoh ,  Yasuo Tarumi ,  Tsutomu Nakamura ,  Hiroyuki Ohata ,  Tsutomu Matsuo ,  Harukazu Okuda

    发明人： Kunio Itoh ,  Yasuo Tarumi ,  Tsutomu Nakamura ,  Hiroyuki Ohata ,  Tsutomu Matsuo ,  Harukazu Okuda

    IPC分类号： C08F8/42

    CPC分类号： C08F8/42

    摘要： The inventive copolymer composition is satisfactorily curable or vulcanizable into, for example, a rubbery elastomer even by an organic peroxide contained therein as a crosslinking agent. The crosslinkable copolymer comprised therein is a polymer having, in a molecule, at least two monomeric units each having a vinyl-containing organosilicon pendant group represented by the general formula (Vi.sub.m R.sup.1.sub.n SiO).sub.a Vi.sub.b R.sup.2.sub.c Si--, in which Vi is a vinyl group, R.sup.1 is a hydrogen atom or a group selected from the class consisting of monovalent hydrocarbon groups free from aliphatic unsaturation, hydroxy group and hydrolyzable groups excepting halogen atoms, R.sup.2 is a hydrogen atom or a monovalent hydrocarbon group, m is 1, 2 or 3, n is zero, 1 or 2, a is 1, 2 or 3, b is zero, 1 or 2 and c is zero, 1 or 2 with the proviso that a+b=1, 2 or 3 and a+b+c=3. Such a copolymer can be prepared by the copolymerization of a first ordinary ethylenically unsaturated monomer and a second monomer having, simultaneously in a molecule, an ethylenically unsaturated linkage copolymerizable with the first monomer and the vinyl-containing organosilicon group of the above given formula.

    摘要翻译： 本发明的共聚物组合物甚至可以通过其中含有的有机过氧化物作为交联剂令人满意地固化或硫化成例如橡胶弹性体。 包含在其中的可交联共聚物是分子中具有至少两个单体单元的聚合物，每个单体单元具有由通式（VimR1nSiO）aVibR2cSi-表示的含乙烯基的有机硅侧基，其中Vi是乙烯基，R1是 氢原子或选自不含脂肪族不饱和键的一价烃基，羟基和除卤素原子外的可水解基团的基团，R 2为氢原子或一价烃基，m为1,2或3，n为0 ，1或2，a为1,2或3，b为0,1或2，c为0,1或2，条件是a + b = 1,2或3，a + b + c = 3。 这种共聚物可以通过共聚第一普通烯键式不饱和单体和第二单体来制备，该单体在分子中同时具有可与上述给定式的第一单体和含乙烯基的有机硅基团共聚的烯属不饱和键。

    Solid state image sensor having means to reset and clear static induction transistor photoelements
    79.
    发明授权
    Solid state image sensor having means to reset and clear static induction transistor photoelements 失效
    具有复位和清除静态感应晶体管光电元件的装置的固态图像传感器

    公开(公告)号：US4684992A

    公开(公告)日：1987-08-04

    申请号：US799136

    申请日：1985-11-18

    申请人： Tsutomu Nakamura ,  Kazuya Matsumoto

    发明人： Tsutomu Nakamura ,  Kazuya Matsumoto

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N3/14

    CPC分类号： H01L27/14679

    摘要： A solid state image sensor including a number of lateral type static induction transistors arranged in a matrix, sources of all transistors being commonly connected to ground potential, gates of transistors arranged in each row being commonly connected to respective row lines and drains of transistors arranged in each column commonly connected to respective column lines, a vertical scanning circuit connected to the row lines, a plurality of column selection transistors each connected between respective column lines and a video output line, and a horizontal scanning circuit connected to gates of the column selection transistors. After one row has been read out, photocarriers stored in transistors belonging to the relevant row are simultaneously discharged by means of a reset signal supplied from the vertical scanning circuit. Then any excessive amounts of photocarriers stored in the transistors are discharged away by means of clear signals supplied from the vertical scanning circuit every time transistors belonging to another row are reset.

    摘要翻译： 一种固态图像传感器，包括以矩阵形式布置的多个横向型静电感应晶体管，所有晶体管的源极共同连接到地电位，每行排列的晶体管的栅极共同连接到排列在 通常连接到各列列的每列，连接到行线的垂直扫描电路，各自连接在各列列和视频输出线之间的多个列选择晶体管，以及连接到列选择晶体管的栅极的水平扫描电路 。 在读出一行之后，存储在属于相关行的晶体管中的光载流子通过从垂直扫描电路提供的复位信号同时放电。 然后，每当晶体管属于另一行的晶体管复位时，通过从垂直扫描电路提供的清除信号将存储在晶体管中的任何过量的光载流子排出。