公开(公告)号：US20110188734A1

公开(公告)日：2011-08-04

申请号：US13017641

申请日：2011-01-31

申请人： Hideo TSUCHIYA ,  Takayuki Abe

发明人： Hideo TSUCHIYA ,  Takayuki Abe

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06K9/52 ,  G06T7/0002 ,  G06T2207/30148

摘要： Acquired mask data of a defect portion is sent to a simulated repair circuit 300 to be simulated. The simulation of the acquired mask data 204 is returned to the mask inspection results 205 and thereafter sent to a wafer transfer simulator 400 along with a reference image at the corresponding portion. A wafer transfer image estimated by the wafer transfer simulator 400 is sent to a comparing circuit 301. When it is determined that there is a defect in the comparing circuit 301, the coordinates and the wafer transfer image which is a basis for the defect determination are stored as transfer image inspection results 206. The mask inspection results 205 and the transfer image inspection result 206 are then sent to the review device 500.

摘要翻译： 获取的缺陷部分的掩模数据被发送到模拟的修复电路300进行仿真。 获取的掩模数据204的模拟返回到掩模检查结果205，然后与对应部分的参考图像一起发送到晶片传送模拟器400。 由晶片转移模拟器400估计的晶片转印图像被发送到比较电路301.当确定比较电路301中存在缺陷时，作为缺陷确定的基础的坐标和晶片转印图像是 存储为转印图像检查结果206.然后将掩模检查结果205和转印图像检查结果206发送到检查装置500。

公开(公告)号：US07928414B2

公开(公告)日：2011-04-19

申请号：US12042865

申请日：2008-03-05

申请人： Takayuki Abe

发明人： Takayuki Abe

IPC分类号： H01J37/304

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/09 ,  H01J2237/0453

摘要： A charged particle beam writing apparatus includes an irradiation part configured to irradiate a charged particle beam; a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam; a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member; a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed.

摘要翻译： 带电粒子束写入装置包括被配置为照射带电粒子束的照射部分; 在阻挡带电粒子束的区域的两侧上具有通过区域的带电粒子束通过的第一成形孔径构件; 偏转部件，其构造成偏转已经穿过第一成形孔部件的带电粒子束; 具有穿过区域的第二成形孔径构件，所述通过区域被带电粒子束穿过阻挡偏转的带电粒子束的区域的两侧; 以及放置已经通过第二成形孔部件的带电粒子束照射的目标工件的台阶。

公开(公告)号：US20110003088A1

公开(公告)日：2011-01-06

申请号：US12865788

申请日：2008-02-06

申请人： Yuuji Honda ,  Takayuki Abe

发明人： Yuuji Honda ,  Takayuki Abe

IPC分类号： C23C16/458 ,  C23C16/00 ,  C23C16/50

CPC分类号： C23C16/4417 ,  B01J2/006 ,  B01J2/12 ,  C23C16/26 ,  C23C16/442 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/3266 ,  H01J2237/20207 ,  H01J2237/20214

摘要： The present invention provides a plasma CVD apparatus and a plasma CVD method capable of efficiently coating the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus according to the present invention is characterized by including a chamber 13, a container disposed in the chamber for housing fine particles 1, the container having a polygonal inner shape in a section approximately parallel to the direction of the gravity, a ground shielding member 27 for shielding the surface of the container other than a housing face for housing the fine particles 1, a rotation mechanism for causing the container to rotate or act as a pendulum on the axis of rotation approximately perpendicular to the section, an opposed electrode 21 disposed in the container so as to face the housing face, a plasma power source 23 electrically connected to the container, a gas introducing mechanism for introducing a raw gas into the container, and an evacuation mechanism for evacuating the inside of the chamber.

摘要翻译： 本发明提供一种等离子体CVD装置和等离子体CVD方法，其能够通过在细颗粒附近浓缩等离子体而用薄膜或超细颗粒有效地涂覆微粒表面。 根据本发明的等离子体CVD装置的特征在于包括：室13，设置在容纳微粒1的室中的容器，具有与重力方向近似平行的截面的多边形内部形状的容器，地面 用于遮蔽容器表面的屏蔽构件27，除了用于容纳微粒1的容纳面以外，用于使容器旋转的旋转机构或者作为大致垂直于该截面的旋转轴的摆锤，相对的电极 21，与容器面相对配置在容器内，与容器电连接的等离子体动力源23，将原料气体导入容器的气体导入机构，以及对室内抽真空的排气机构。

公开(公告)号：US07669174B2

公开(公告)日：2010-02-23

申请号：US11671243

申请日：2007-02-05

申请人： Keiko Emi ,  Junichi Suzuki ,  Takayuki Abe

发明人： Keiko Emi ,  Junichi Suzuki ,  Takayuki Abe

IPC分类号： G06F17/50 ,  G06F19/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31764

摘要： A pattern generation method includes changing a dimension of a pattern included in each mesh-like region of a plurality of mesh-like regions by using an area of the pattern and a total sum of lengths of circumferential sides of the pattern included in each mesh-like region to correct a dimension error of the pattern, wherein the dimension error being caused by loading effects and the plurality of mesh-like regions being virtually divided from a pattern forming region of a target object, and generating a pattern of the dimension changed on the target object.

摘要翻译： 图案生成方法包括通过使用图案的区域和包括在每个网状区域中的图案的周边的长度的总和来改变包括在多个网状区域的每个网格区域中的图案的尺寸， 以校正图案的尺寸误差，其中所述尺寸误差是由加载效应引起的，并且所述多个网状区域从目标对象的图案形成区域虚拟地分割，并且生成维度上的尺寸的图案 目标对象。

公开(公告)号：US07601968B2

公开(公告)日：2009-10-13

申请号：US11563109

申请日：2006-11-24

申请人： Takayuki Abe ,  Jun Yashima

发明人： Takayuki Abe ,  Jun Yashima

IPC分类号： G21K1/087

CPC分类号： H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  H01J37/045 ,  H01J37/24 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/0432 ,  H01J2237/1504 ,  H01J2237/30472

摘要： A charged particle beam writing method includes irradiating a shot of a charged particle beam, and deflecting the charged particle beam of the shot using a plurality of deflectors arranged on an optical path of the charged particle beam to write a pattern on a target object, wherein any one of the plurality of deflectors controls deflection of a charged particle beam of a shot different from a shot which is controlled in deflection by another deflector in the same period.

摘要翻译： 带电粒子束写入方法包括照射带电粒子束的镜头，并且使用布置在带电粒子束的光路上的多个偏转器偏转拍摄的带电粒子束以将目标物体写入图案，其中 所述多个偏转器中的任何一个控制在相同的周期内不同于由另一偏转器偏转控制的镜头的镜头的带电粒子束的偏转。

公开(公告)号：US07525110B2

公开(公告)日：2009-04-28

申请号：US11671789

申请日：2007-02-06

申请人： Junichi Suzuki ,  Keiko Emi ,  Takayuki Abe

发明人： Junichi Suzuki ,  Keiko Emi ,  Takayuki Abe

IPC分类号： A61N5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： A charged-particle beam microlithographic apparatus is generally made up of a pattern writing unit and a system controller. The writer has an electron beam source and a pattern generator for forming a pattern image on a workpiece. The system controller includes a unit for correcting proximity and fogging effects occurrable during pattern writing. This unit has a first calculator for calculating a proximity effect-corrected dose, a functional module for calculation of a fog-corrected dose while including therein the influence of the proximity effect, and a multiplier for combining the calculated doses together to determine a total corrected dose. The module has a second calculator for calculating a variable real value representing the proximity-effect influence to be considered during fog correction, and a third calculator for calculating using this value the fog-corrected dose.

摘要翻译： 带电粒子束微光刻设备通常由图案写入单元和系统控制器组成。 作者具有电子束源和用于在工件上形成图案图像的图案发生器。 系统控制器包括用于在模式写入期间发生的用于校正接近度和起雾效果的单元。 该单元具有用于计算接近效应校正剂量的第一计算器，用于计算雾化校正剂量的功能模块，同时在其中包括邻近效应的影响，以及用于将计算的剂量组合在一起以确定总校正的乘数 剂量。 该模块具有第二计算器，用于计算表示在雾化校正期间考虑的邻近效应影响的可变实数值;以及第三计算器，用于使用该值计算雾化校正剂量。

公开(公告)号：US07293674B2

公开(公告)日：2007-11-13

申请号：US10505134

申请日：2003-04-30

申请人： Takayuki Abe ,  Takayuki Goto ,  Mitsuo Furusawa ,  Tsutomu Kobayashi

发明人： Takayuki Abe ,  Takayuki Goto ,  Mitsuo Furusawa ,  Tsutomu Kobayashi

IPC分类号： B65D35/56

CPC分类号： A46B11/0086 ,  A45D24/22 ,  A45D24/26 ,  A46B11/0041 ,  A46B11/0079 ,  A61J9/001 ,  A61J9/04 ,  B65D47/2031 ,  B65D47/2075 ,  B65D83/0055

摘要： The technical problem of this invention is to create check valve mechanisms of a simple configuration. Thus, the object of this invention is to provide a discharge container maintaining high productivity, showing good squeeze operation, and having improved outer appearance. The above technical problem and the object of this invention are solved and achieved by a discharge container comprising: a squeezable container 1 having an outer layer 2, an inner layer 3 laminated with the outer layer 2, a container neck 6 disposed on top of the container 1 and used as the flow path 29 for the contents, and an air intake 13 used to introduce outside air into the void between the outer layer 2 and the inner layer 3; an applicator 70 having an applying mechanism and discharge holes 74 for discharging the contents, and having discharge passage 76 communicated with the neck 6; the second check valve mechanism 41 that acts to open or close the flow path 29 so as not to allow the backflow of the contents and the entry of outside air; a base cup 50 having a bottom of its own, a cylindrical wall 51, which is fitted around the bottom cylinder 8, and an air hole 54 that introduces outside air into air intake 13; and the first check valve 40, which is assembled with and fitted to the base cup 50 so as to allow outside air to pass through the air intake 13 but not to allow the backflow of introduced air.

摘要翻译： 本发明的技术问题是创建简单配置的止回阀机构。 因此，本发明的目的是提供一种保持高生产率的排出容器，显示出良好的挤压操作，并具有改善的外观。 本发明的上述技术问题和目的通过一种排放容器来解决和实现，该排放容器包括：可挤压容器1，其具有外层2，层3与外层2的内层3，设置在外层2的顶部的容器颈部6 容器1并用作内容物的流路29，以及用于将外部空气引入外层2和内层3之间的空隙中的进气口13; 具有施加机构的施用器70和用于排出内容物的排出孔74，并且具有与颈部6连通的排出通道76; 用于打开或关闭流路29以防止内容物回流和外部空气进入的第二止回阀机构41; 具有自身底部的底杯50，围绕底筒8安装的圆筒壁51和将外部空气引入进气口13的气孔54; 以及第一止回阀40，其与基座杯50组装并配合以允许外部空气通过进气口13但不允许引入空气的回流。

公开(公告)号：US20070187624A1

公开(公告)日：2007-08-16

申请号：US11671789

申请日：2007-02-06

申请人： Junichi Suzuki ,  Keiko Emi ,  Takayuki Abe

发明人： Junichi Suzuki ,  Keiko Emi ,  Takayuki Abe

IPC分类号： G21K5/10

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： A charged-particle beam microlithographic apparatus is generally made up of a pattern writing unit and a system controller. The writer has an electron beam source and a pattern generator for forming a pattern image on a workpiece. The system controller includes a unit for correcting proximity and fogging effects occurrable during pattern writing. This unit has a first calculator for calculating a proximity effect-corrected dose, a functional module for calculation of a fog-corrected dose while including therein the influence of the proximity effect, and a multiplier for combining the calculated doses together to determine a total corrected dose. The module has a second calculator for calculating a variable real value representing the proximity-effect influence to be considered during fog correction, and a third calculator for calculating using this value the fog-corrected dose.

摘要翻译： 带电粒子束微光刻设备通常由图案写入单元和系统控制器组成。 作者具有电子束源和用于在工件上形成图案图像的图案发生器。 系统控制器包括用于在模式写入期间发生的用于校正接近度和起雾效果的单元。 该单元具有用于计算接近效应校正剂量的第一计算器，用于计算雾化校正剂量的功能模块，同时在其中包括邻近效应的影响，以及用于将计算的剂量组合在一起以确定总校正的乘数 剂量。 该模块具有第二计算器，用于计算表示在雾化校正期间考虑的邻近效应影响的可变实数值;以及第三计算器，用于使用该值计算雾化校正剂量。

公开(公告)号：US20070114453A1

公开(公告)日：2007-05-24

申请号：US11460848

申请日：2006-07-28

申请人： Keiko Emi ,  Junichi Suzuki ,  Takayuki Abe ,  Tomohiro Iijima ,  Jun Yashima

发明人： Keiko Emi ,  Junichi Suzuki ,  Takayuki Abe ,  Tomohiro Iijima ,  Jun Yashima

IPC分类号： A61N5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31764 ,  H01J2237/31769

摘要： A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.

摘要翻译： 光束剂量计算方法包括：从目标对象的表面区域划分出区域的行和列的矩阵，以包括不同大小的第一，第二和第三区域，第三区域的尺寸小于第一和第二区域 确定用于校正所述第一区域中的雾化效应的带电粒子束的第一校正剂量，确定用于校正由于所述第二区域中的负载效应而导致的图案线宽度偏差的校正大小值，使用所述第二区域中的所述校正大小值来创建 使用所述校正的大小值，在所述第二区域的各个区域中的所述光束的基本剂量的映射，以使用所述映射来确定所述第二区域中的相应的所述第二区域中的邻近效应校正系数的映射，以确定所述光束的第二校正剂量 校正所述第三区域中的邻近效应，并且使用第一和第二校正剂量来确定实际波束d 在所述对象的表面上的每个位置上。

公开(公告)号：US06333138B1

公开(公告)日：2001-12-25

申请号：US09520631

申请日：2000-03-07

申请人： Iwao Higashikawa ,  Takayuki Abe

发明人： Iwao Higashikawa ,  Takayuki Abe

IPC分类号： G03C500

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70441 ,  G03F7/70475 ,  H01J37/3174 ,  H01J2237/31764 ,  Y10S430/143

摘要： An exposure method of sequential beam, contributing to the improvement of alignment accuracy at connecting portion at the end part of an exposure region, as well as pattern dimension accuracy is provided. The method comprises the steps of dividing an area to be exposed into a plurality of fields each being determined by the deflection width of the main deflector, dividing each field into a plurality of sub-fields each being determined by the deflection width of the sub-deflector, applying a sequential exposure process to each field by using a variable shaped electron beam, and applying a multiple exposure process to an area where adjacent fields overlap each other, wherein the multiple exposure process is conducted in the area in units of sub-field, the exposure dose at each of exposure unit is determined such that the total exposure dosage in the area subject to the multiple exposure process is set equal to an exposure dosage used when single exposure process is applied, the exposure dosage in the area subject to multiple exposure process is decreased in steps, in the direction perpendicular to the longitudinal direction of the boundary portion from the outer edge of the field towards the outside of the field, an exposure dosage in the area subject to the multiple exposure process is determined using the minimum exposure dosage available in the exposure apparatus as the lower limit.

摘要翻译： 提供顺序光束的曝光方法，有助于提高曝光区域的端部的连接部分的对准精度以及图案尺寸精度。 该方法包括以下步骤：将要暴露的区域划分为多个场，每个场由主偏转器的偏转宽度确定，将每个场分成多个子场，每个子场由子场的偏转宽度确定， 偏转器，通过使用可变形的电子束对每个场施加顺序曝光处理，以及对相邻场相互重叠的区域施加多次曝光处理，其中在该区域中以子场为单位进行多次曝光处理 确定每个曝光单元的曝光剂量，使得经受多次曝光处理的区域中的总曝光剂量设定为等于施加单次曝光处理时使用的曝光剂量，在多个区域内的曝光剂量 曝光过程在从场的外边缘朝向与边界部分的纵向方向垂直的方向上逐步减小 使用曝光装置中可获得的最小曝光剂量作为下限来确定在多次曝光处理区域内的曝光剂量。