摘要:
According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes first and second interconnects, and a memory cell. The second interconnect is non-parallel to the first interconnect. The memory cell includes a resistance change layer provided at an intersection between the first and second interconnects. The control unit is connected to the first and second interconnects to supply voltage and current to the resistance change layer. The control unit increases an upper limit of a current supplied to the first interconnect based on a change of a potential of the first interconnect when applying a set operation voltage to the first interconnect in a set operation of changing the resistance change layer from a first state with a first resistance value to a second state with a second resistance value being less than the first resistance value.
摘要:
A semiconductor memory device includes first and second memory cells each including a variable resistance element and a diode and having a pillar shape, and an insulating layer provided between the first memory cell and the second memory cell and including a void. A central portion of the diode has a smaller width than widths of upper and lower portions of the diode.
摘要:
An orthographic projection creating unit creates an orthographic projection image from an optical image of an ground surface acquired by an optical camera, and a DSM generating unit generates a DSM from the orthographic projection image. A laser point group data generating unit generates three-dimensional point group data based on a laser measurement result of the ground surface by a laser measuring device. An object generating unit groups altitude data of the DSM and altitude data of the three-dimensional point group data for each of objects such as buildings. A synthesizing unit extracts the same objects from the grouped altitude data of the DSM and three-dimensional point group data, associates the objects with each other based on respective coordinate information thereof, and replaces altitude information of the optical image by high-accuracy altitude information of the three-dimensional point group data for each of the objects.
摘要:
A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.
摘要:
There is provided a method for disassembling a bonded structure obtained by bonding a first base member and a second base member to each other via a bonding film mainly made of a compound having a branched polyorganosiloxane skeleton having a structural unit expressed by a following general formula (1) at a terminal portion, a structural unit expressed by a following general formula (2) at a linking portion, and a structural unit expressed by a following general formula (3) at a branched portion: In the formulas, each R independently represents a non-substituted hydrocarbon group; each Z independently represents a hydroxyl group or a hydrolytic group; each X represents a siloxane residue; a represents 0 or an integer of 1 to 3; b represents 0 or an integer of 1 or 2; and c represents 0 or 1. The disassembling method includes heating the bonding film into a molten state at a temperature equal to or higher than a glass transition point of the compound having the branched polyorganosiloxane skeleton and separating the first and the second base members from each other.
摘要:
A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
摘要:
A semiconductor device is disclosed that performs fingerprint recognition on the electrostatic-capacity principle. A finger sweeping across a fingerprint recognition area of a semiconductor chip provides positive fingerprint recognition operations with improved reliability.The semiconductor device includes the semiconductor chip having a sensor unit that performs fingerprint recognition, and a substrate having an opening formed in the position corresponding to the sensor unit. The semiconductor chip is flip chip bonded to the substrate such that the sensor unit corresponds to the opening, and except for the formed position of the opening, an under-fill material is provided between the semiconductor chip and the substrate.
摘要:
A wireless terminal capable of securing the number of station units capable of simultaneous communication with one unit of access point, reducing power consumption, and ensuring stable communication quality. In the wireless terminal (100), an interference determining section (109) determines whether or not an interference wave is at a predetermined level or more on the basis of the RSSI and SNR of the received signals which are calculated by an RSSI (Received Signal Strength Indicator) calculating section (104) and SNR (Signal to Noise Ratio) calculating section (105) and the presence/absence of a demodulation error notified from a demodulation section (108). A number-of-retransmission upper limit setting section (113) sets the upper limit of the number of retransmission smaller than when the interference wave is at the predetermined level or lower if the interference wave is at the predetermined level or more. A WLAN transmitting circuit (115) repeats the transmission of a transmitting signal by the upper limit number of retransmission till the transmission of the transmitting signal is successful.
摘要:
An automatic banding packing machine and its automatic banding packing system are provided in which conveying lines of an object to be packed can be aligned in a straight direction, an installation space can be small, the entire structure can be simplified, and moreover, band supply into a band guide arch can be conducted surely so as to enable continuous packing work.Solving MeansThe automatic banding packing machine is provided with a packing machine body having an upper-face table on which the object to be packed passes, a pair of vertical band guide arches arranged separately from each other above the upper-face table in a direction parallel with a passage direction of the object to be packed, and a horizontal band guide arch arranged above the upper-face table in the direction parallel with the passage direction of the object to be packed, and the pair of vertical band guide arches is configured to be movable between a standby position separated from the horizontal band guide arch and a communication position communicating with the horizontal band guide arch in a direction orthogonal to the passage direction of the object to be packed.
摘要:
A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.