摘要:
A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要:
In an image forming apparatus in which an original reading portion is disposed in an upper portion of the apparatus main body, a feed portion is disposed in a lower portion of the apparatus main body, and a printing portion is disposed between the original reading portion and the feed portion as an image forming system, a paper post-processing portion that can perform a plurality of types of paper post-processing for recording paper transported from the apparatus main body after printing by the printing portion is finished, and a discharge portion to which recording paper is discharged after paper post-processing by the paper post-processing portion is finished, are disposed in a space of the apparatus main body formed by the original reading portion, the printing portion, and the feed portion, and the paper post-processing portion is controlled according to print conditions selected when a print request is made.
摘要:
A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要:
An endoscope control device includes: a safety maintaining circuit for maintaining safety in terms of function or use-purpose of the endoscope control device; a control section for controlling operation of the endoscope control device; and an activation section for activating the control section, wherein the safety maintaining circuit is formed in the same device as at least one of the control section and the activation section.
摘要:
In an image forming apparatus in which an original reading portion is disposed in an upper portion of the apparatus main body, a feed portion is disposed in a lower portion of the apparatus main body, and a printing portion is disposed between the original reading portion and the feed portion as an image forming system, a paper post-processing portion that can perform a plurality of types of paper post-processing for recording paper transported from the apparatus main body after printing by the printing portion is finished, and a discharge portion to which recording paper is discharged after paper post-processing by the paper post-processing portion is finished, are disposed in a space of the apparatus main body formed by the original reading portion, the printing portion, and the feed portion, and the paper post-processing portion is controlled according to print conditions selected when a print request is made.
摘要:
A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要:
In a semiconductor integrated circuit having an interface circuit adapted to be connected to a power supply line connected to the interface circuit, and a signal line connected to the interface circuit. A pull-up resistor is connected to the power supply line at one terminal thereof. A blocking diode has an anode and a cathode which are connected to the terminal of the pull-up resistor and the signal line, respectively.
摘要:
There is provided a magnetoresistance effect element which is capable of causing a large sense current to flow between electrodes and which has a smaller dispersion in direction of magnetization of a CPP element based on a magnetic field due to the sense current and has a lager reproducing output, and a method for producing the same. The magnetoresistance effect element is produced by: after forming a first electrode, forming a magnetoresistance effect film on the first electrode; applying a self-condensing organic resist on the magnetoresistance effect film, and thereafter, causing the organic resist to be droplets; subsequently, forming an insulating film thereon, and thereafter, removing the organic resist to form a groove portion in the insulating film to expose the top surface of the magnetoresistance effect film; and filling the groove portion with an electrode material to form a second electrode.
摘要:
Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.
摘要:
An amorphous oxide magnetic material is represented by a formula (1-y) [Ln.sub.1-x A.sub.x MnO.sub.3-.delta. ].multidot.y[XO] wherein x and y fall within the ranges of 0.1.ltoreq.x.ltoreq.1.0 and y.ltoreq.0.7, respectively. Ln represents at least one element selected from the group consisting of Ln and a rare earth element. A represents at least one element selected from the group consisting of Ca, Sr, Ba and Pb, X represents at least one element selected from the group consisting of B, Bi, Si, Mg, Mo, V, Zn, P and Ge, and .delta. represents oxygen deficiency and .delta..ltoreq.1.