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    Memory Arrays and Methods of Forming Memory Arrays
    74.
    发明申请
    Memory Arrays and Methods of Forming Memory Arrays 有权
    内存数组和形成内存数组的方法

    公开(公告)号：US20170025477A1

    公开(公告)日：2017-01-26

    申请号：US14803303

    申请日：2015-07-20

    Applicant: Micron Technology, Inc.

    Inventor： Mattia Boniardi ,  Andrea Redaelli

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2481 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

    Abstract: Some embodiments include a memory array having a first memory cell adjacent to a second memory cell along a lateral direction. The second memory cell is vertically offset relative to the first memory cell. Some embodiments include a memory array having a series of data/sense lines extending along a first direction, a series of access lines extending along a second direction, and memory cells vertically between the access lines and data/sense lines. The memory cells are arranged in a grid having columns along the first direction and rows along the second direction. Memory cells in a common column and/or row as one another are arranged in two alternating sets, with a first set having memory cells at a first height and a second set having memory cells at a second height vertically offset relative to the first height. Some embodiments include methods of forming memory arrays.

    Abstract translation: 一些实施例包括具有沿着横向方向与第二存储器单元相邻的第一存储单元的存储器阵列。 第二存储单元相对于第一存储单元垂直偏移。 一些实施例包括具有沿着第一方向延伸的一系列数据/感测线的存储器阵列，沿第二方向延伸的一系列接入线以及在接入线和数据/感测线之间垂直的存储单元。 存储单元布置成具有沿着第一方向的列和沿着第二方向的列的网格。 公共列和/或行中的存储单元彼此排列成两个交替的组，其中第一组具有第一高度的存储单元，而第二组具有相对于第一高度垂直偏移的第二高度的存储单元。 一些实施例包括形成存储器阵列的方法。

    Methods of forming memory cells and arrays
    78.
    发明授权
    Methods of forming memory cells and arrays 有权
    形成记忆体和阵列的方法

    公开(公告)号：US09112150B2

    公开(公告)日：2015-08-18

    申请号：US13948980

    申请日：2013-07-23

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Redaelli ,  Giorgio Servalli ,  Carmela Cupeta ,  Fabio Pellizzer

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1293 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675

    Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 加热器结构形成在电节点阵列上，相变材料跨过加热器结构形成。 相变材料被图案化成多个限制结构，其中限制结构与加热器结构一一对应，并且通过一个或多个完全横向围绕每个限制结构的绝缘材料彼此间隔开 。 一些实施例包括在电节点阵列上具有加热器结构的存储器阵列。 密闭相变材料结构在加热器结构之上，并且与加热器结构一一对应。 受限制的相变材料结构通过一个或多个完全横向围绕每个限定相变材料结构的绝缘材料彼此间隔开。

    MEMORY CELLS HAVING HEATERS WITH ANGLED SIDEWALLS
    79.
    发明申请
    MEMORY CELLS HAVING HEATERS WITH ANGLED SIDEWALLS 有权
    具有加热器的加热器的存储器电池

    公开(公告)号：US20150200366A1

    公开(公告)日：2015-07-16

    申请号：US14599636

    申请日：2015-01-19

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Redaelli ,  Giorgio Servalli ,  Pietro Petruzza ,  Cinzia Perrone

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/124 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

    Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.

    Abstract translation: 具有带有倾斜侧壁的加热器的记忆单元及其形成方法在此描述。 作为示例，形成电阻存储器单元阵列的方法可以包括形成具有相对于垂直平面成角度的第一加热元件的第一电阻式存储单元，形成与第一电阻式存储单元相邻的第二电阻式存储单元，并具有 相对于垂直平面并朝向第一加热器成角度的第二加热器元件，以及形成与第一电阻式存储单元相邻的第三电阻式存储单元，并具有相对于垂直平面成角度且远离第一加热器的第三加热元件 元件。

    Fuses, and Methods of Forming and Using Fuses
    80.
    发明申请
    Fuses, and Methods of Forming and Using Fuses 有权
    保险丝，以及使用保险丝的方法

    公开(公告)号：US20150170859A1

    公开(公告)日：2015-06-18

    申请号：US14629296

    申请日：2015-02-23

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Redaelli ,  Giorgio Servalli

    IPC: H01H37/32

    CPC classification number: H01H85/06 ,  G11C13/0004 ,  H01H37/32 ,  H01H85/08 ,  H01H85/11 ,  Y10T29/49107

    Abstract: Some embodiments include a fuse having a tungsten-containing structure directly contacting an electrically conductive structure. The electrically conductive structure may be a titanium-containing structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through the interface exceeds a predetermined level. Some embodiments include a method of forming and using a fuse. The fuse is formed to have a tungsten-containing structure directly contacting an electrically conductive structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through the interface exceeds a predetermined level. Current exceeding the predetermined level is passed through the interface to rupture the interface.

    Abstract translation: 一些实施例包括具有直接接触导电结构的含钨结构的熔丝。 导电结构可以是含钛结构。 含钨结构和导电结构之间的界面被配置为当通过界面的电流超过预定水平时破裂。 一些实施例包括形成和使用保险丝的方法。 保险丝形成为具有直接接触导电结构的含钨结构。 含钨结构和导电结构之间的界面被配置为当通过界面的电流超过预定水平时破裂。 超过预定水平的电流通过界面破裂界面。

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