摘要:
A rear wheel suspension arrangement of trailing arm type for motor vehicles includes a trailing arm for supporting a rear wheel, and a pair of upper and lower lateral arms. The trailing arm is split into a vehicle body side arm and a wheel side arm, which are coupled to have a degree of displacing freedoms within a horizontal plane of the vehicle body. The vehicle body side arm is formed shorter than the lateral arms, whose pivotally securing portion to the vehicle body is disposed at the front side from the coupling portion to the wheel side arm, and disposed in the inside in the lateral direction from the wheel side arm. The lower lateral arm is pivotally secured at least to the wheel side arm via a ball joint.
摘要:
A battery system is provided that can prevent overcharging during charging, and that can demonstrate appropriate charging performance and output performance of a secondary battery even when the battery system is used in a low-temperature environment. The battery system includes a secondary battery and a protection circuit. The protection circuit includes a bypass electrical path that connects an upstream-side main electrical path that is connected to a positive terminal of the secondary battery to a downstream-side main electrical path that is connected to a negative terminal of the secondary battery. The battery system is configured so that, when the voltage of the secondary battery exceeds a predetermined voltage during charging, current flowing through the secondary battery decreases while current flowing through the bypass electrical path increases, and when the voltage of the secondary battery falls below the predetermined voltage during charging, the current flowing through the secondary battery increases while the current flowing through the bypass electrical path decreases. The bypass electrical path includes a heater that generates heat using the current flowing through the bypass electrical path, and the heater is arranged adjacent to or in close contact with the secondary battery so as to impart a thermal effect to the secondary battery.
摘要:
A first measured value of a specific physical quantity at a target portion is correlated with a damage evaluation index to calculate a damage degree corresponding to the first measured value. The specific physical quantity is measured at least once at a position corresponding to the first measurement position in another time period having a different usage elapsed time from that of the first measurement, and these second and subsequent measured values are correlated with damage degrees calculated based on temporal changes corresponding to the second and subsequent measurements. A new damage evaluation index is approximately calculated based on a relationship between the first, second, and subsequent measured values and the damage degrees corresponding to the first, second, and subsequent measured values.
摘要:
A battery system includes a secondary battery and a bypass circuit provided with a semiconductor switch element, and the secondary battery and the bypass circuit are connected parallely. In this battery system, the semiconductor switch element is attached so as to radiate heat to a surface of a battery outer case of the secondary battery or to a bus bar.
摘要:
A protective-film-attached composite substrate includes a support substrate, an oxide film disposed on the support substrate, a semiconductor layer disposed on the oxide film, and a protective film protecting the oxide film by covering a portion that is a part of the oxide film and covered with none of the support substrate and the semiconductor layer. A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate; and epitaxially growing, on the semiconductor layer of the protective-film-attached composite substrate, at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used.
摘要:
A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.
摘要:
An OLT, which is one of the embodiments of the present invention, is provided with: an allocation request receiving unit that receives a bandwidth allocation request from each of 1G-ONUs and each of 10G-ONUs; an allocation execution unit that allocates to each of the ONUs a time slot for data transmission in accordance with an allocation rule based on fairness in time allocation or an allocation rule based on fairness in throughput allocation; and an allocation result notification unit that notifies each of the ONUs of information regarding the time slot.
摘要:
A servo press system in which a servo transfer device implements a transfer operation by utilizing first transfer operation instruction information that is generated depending on a mechanical motion state of a press element of a servo press or second transfer operation instruction information that is generated independently of the mechanical motion state of the press element during a press operation using a pendulum motion.
摘要:
Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm−3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.
摘要:
A heat sink includes a base portion formed of insulating diamond, and a plurality of pressure contacting members formed of the insulating diamond and arranged on the base portion