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    Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
    2.
    发明授权
    Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same 失效
    可用作III族氮化物衬底的III族氮化物晶体及其制造方法和包括其的半导体器件

    公开(公告)号：US07309534B2

    公开(公告)日：2007-12-18

    申请号：US10856467

    申请日：2004-05-27

    申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masanori Morishita

    发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masanori Morishita

    IPC分类号： B32B9/00 ,  B32B18/00 ,  C30B9/00

    CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02625 ,  H01L29/2003 ,  H01L29/66856

    摘要： The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured highly efficiently, and are useful and usable as a substrate that is used in semiconductor manufacturing processes. The method of manufacturing Group III nitride crystals includes: forming a first layer made of a semiconductor that is expressed by a composition formula of AlsGatIn1-s-tN (where 0≦s≦1, 0≦t≦1, and s+t≦1); forming a second layer by bringing the surface of the first layer into contact with a melt in an atmosphere including nitrogen, wherein the second layer includes greater defects in a crystal structure, such as a dislocation density for example, than those of the first layer, and the melt includes alkali metal and at least one Group III element selected from the group consisting of gallium, aluminum, and indium; and forming a third layer through crystal growth in the melt in an atmosphere including nitrogen, wherein the third layer is made of a semiconductor that is expressed by a composition formula of AluGavIn1-u-vN (where 0≦u≦1, 0≦v≦1, and u+v≦1), and the third layer has less defects in a crystal structure, such as a dislocation density for example, than those of the second layer.

    摘要翻译： 本发明提供一种制造高品质的III族氮化物晶体的方法，其制造高效率，并且可用和用作半导体制造工艺中使用的基板。 制造III族氮化物晶体的方法包括：形成由半导体制成的第一层，其由下式的组成式表示： （其中0 <= s <= 1,0 <= t <= 1，s + t <= 1）; 通过使第一层的表面在包括氮气的气氛中与熔体接触而形成第二层，其中第二层在诸如位错密度的晶体结构中具有比第一层更大的缺陷， 并且熔体包括碱金属和至少一种选自镓，铝和铟的III族元素; 以及通过在包括氮气的气氛中在熔体中的晶体生长形成第三层，其中第三层由以下组成式表示的半导体制成： 在其中0 <= u <= 1,0 <= v <= 1和u + v <= 1）中，并且第三层在一个 晶体结构，例如位错密度比第二层的位错密度。

    Method of growing III-nitride crystal
    3.
    发明授权
    Method of growing III-nitride crystal 有权
    生长III族氮化物晶体的方法

    公开(公告)号：US09279194B2

    公开(公告)日：2016-03-08

    申请号：US12630836

    申请日：2009-12-03

    申请人： Hiroaki Yoshida ,  Shinsuke Fujiwara ,  Koji Uematsu ,  Masanori Morishita

    发明人： Hiroaki Yoshida ,  Shinsuke Fujiwara ,  Koji Uematsu ,  Masanori Morishita

    IPC分类号： C30B25/20 ,  C30B29/40

    CPC分类号： C30B25/20 ,  C30B29/406

    摘要： Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm−3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.

    摘要翻译： 提供了在高于1100℃的环境温度下，通过HVPE在第一III族氮化物晶体的整个主表面上生长第二III族氮化物晶体的方法。本III-氮化物晶体生长方法包括： 制备碱金属原子浓度小于1.0×1018cm-3的第一III族氮化物晶体（10）的步骤; 以及在高于1100℃的环境温度下通过HVPE在第一III族氮化物晶体（10）的主表面（10m）上生长第二III族氮化物晶体（20）的步骤。

    METHOD FOR GROWING GaN CRYSTAL
    10.
    发明申请
    METHOD FOR GROWING GaN CRYSTAL 审中-公开
    GaN晶体生长方法

    公开(公告)号：US20110100292A1

    公开(公告)日：2011-05-05

    申请号：US13003540

    申请日：2009-07-14

    申请人： Koji Uematsu ,  Hiroaki Yoshida ,  Masanori Morishita ,  Shinsuke Fujiwara

    发明人： Koji Uematsu ,  Hiroaki Yoshida ,  Masanori Morishita ,  Shinsuke Fujiwara

    IPC分类号： C30B19/04

    CPC分类号： H01L21/0254 ,  C30B9/00 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02625 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/16

    摘要： A method for growing a GaN crystal includes a step of preparing a substrate (10) that includes a main surface (10m) and includes a Gax Aly In1-x-y N seed crystal (10a) including the main surface (10m) and a step of growing a GaN crystal (20) on the main surface (10m) at an atmosphere temperature of 800° C. or more and 1500° C. or less and at an atmosphere pressure of 500 atmospheres or more and less than 2000 atmospheres by bringing a solution (7) provided by dissolving (5) nitrogen in a Ga melt (3) into contact with the main surface (10m) of the substrate (10). The method further includes, after the step of preparing the substrate (10) and before the step of growing the GaN crystal (20), a step of etching the main surface (10m) of the substrate (10). Thus, a method for growing a GaN crystal having a low dislocation density and high crystallinity is provided without adding impurities other than raw materials to the melt and without increasing the size of a crystal growth apparatus.

    摘要翻译： 一种用于生长GaN晶体的方法包括制备包括主表面（10m）并包括主表面（10m）的Gax Aly In 1-xy N晶种（10a）的衬底（10）的步骤和 在800℃以上且1500℃以下的气氛温度和500大气压以上且小于2000个大气压的气氛下，在主表面（10μm）上生长GaN晶体（20），通过使 通过将（5）氮在Ga熔体（3）中溶解以与衬底（10）的主表面（10m）接触而提供的溶液（7）。 该方法还包括在制备衬底（10）的步骤之后和生长GaN晶体（20）的步骤之前，蚀刻衬底（10）的主表面（10m）的步骤。 因此，提供了一种生长具有低位错密度和高结晶度的GaN晶体的方法，而不增加熔体中的原料以外的杂质，而不增加晶体生长装置的尺寸。