公开(公告)号：US07586554B2

公开(公告)日：2009-09-08

申请号：US11583882

申请日：2006-10-20

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

公开(公告)号：US20080292786A1

公开(公告)日：2008-11-27

申请号：US12153568

申请日：2008-05-21

申请人： Mutsuko Hatano ,  Takashi Hattori

发明人： Mutsuko Hatano ,  Takashi Hattori

IPC分类号： B05D5/06

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/1368 ,  H01L27/1214

摘要： Provided is a method of manufacturing a display device having a step of forming a resin material layer by curing a resin coated on the main surface of a glass substrate; a step of forming a display circuit configured by a plurality of lamination material layers on the main surface side of said resin material layer; and a step of generating exfoliation at the interface between said resin material layer and said glass substrate, by irradiating a ultraviolet ray from the surface on the opposite side to the surface provided with said display circuit of said glass substrate, and said resin material layer, from which said glass substrate is removed, is used as a substrate provided with said display circuit.

摘要翻译： 提供一种制造显示装置的方法，该显示装置具有通过固化涂覆在玻璃基板的主表面上的树脂来形成树脂材料层的步骤; 在所述树脂材料层的主表面上形成由多层叠材料层构成的显示电路的步骤; 以及通过从设置有所述玻璃基板的所述显示电路的表面的相反侧的表面照射紫外线和所述树脂材料层，在所述树脂材料层和所述玻璃基板之间的界面处产生剥离的步骤， 将所述玻璃基板从所述玻璃基板除去，用作设置有所述显示电路的基板。

公开(公告)号：US07335915B2

公开(公告)日：2008-02-26

申请号：US11585967

申请日：2006-10-25

申请人： Yoshiaki Toyota ,  Mutsuko Hatano

发明人： Yoshiaki Toyota ,  Mutsuko Hatano

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.

摘要翻译： 公开了一种提高图像显示装置的制造成品率的技术。 图像显示装置的制造方法包括以下步骤：在绝缘基板上形成多个岛状半导体层，在岛状半导体层上形成栅极绝缘膜，在栅极绝缘膜中限定多于一个的接触孔 在所述栅极绝缘膜上形成用于使所述岛状半导体层与所述栅极绝缘膜接触的栅电极，在所述岛状半导体层中形成源极区域，漏极区域和沟道区域， 在栅电极上形成层间电介质（ILD）膜，形成与源极和漏极区域接触的源/漏电极和ILD膜，在形成源极/漏极之后限定通孔，并且去除 岛状半导体层和栅电极的接触部分。

公开(公告)号：US20070155070A1

公开(公告)日：2007-07-05

申请号：US11620154

申请日：2007-01-05

申请人： Kiyoshi OUCHI ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

发明人： Kiyoshi OUCHI ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.

摘要翻译： 一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。 在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。 当制造TFT时，该低电阻半导体层用于形成源极和漏极。 由于C，N和O杂质降低了TFT的迁移率，所以使用多晶硅，其中污染物浓度满足以下条件：碳浓度<= 3×10 9 / >，氮浓度<= 5×10 17 cm -3，氧浓度<= 3×10 9 cm -3 -3 / 。

公开(公告)号：US20070096209A1

公开(公告)日：2007-05-03

申请号：US11585967

申请日：2006-10-25

申请人： Yoshiaki Toyota ,  Mutsuko Hatano

发明人： Yoshiaki Toyota ,  Mutsuko Hatano

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L21/84 ,  H01L21/00 ,  H01L31/0392

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.

摘要翻译： 公开了一种提高图像显示装置的制造成品率的技术。 图像显示装置的制造方法包括以下步骤：在绝缘基板上形成多个岛状半导体层，在岛状半导体层上形成栅极绝缘膜，在栅极绝缘膜中限定多于一个的接触孔 在所述栅极绝缘膜上形成用于使所述岛状半导体层与所述栅极绝缘膜接触的栅电极，在所述岛状半导体层中形成源极区域，漏极区域和沟道区域， 在栅电极上形成层间电介质（ILD）膜，形成与源极和漏极区域接触的源/漏电极和ILD膜，在形成源/漏电极之后限定出一个或多个通孔， 岛状半导体层和栅电极的接触部分。

公开(公告)号：US06635932B2

公开(公告)日：2003-10-21

申请号：US10213698

申请日：2002-08-06

申请人： Costas P. Grigoropoulos ,  Mutsuko Hatano ,  Ming-Hong Lee ,  Seung-Jae Moon

发明人： Costas P. Grigoropoulos ,  Mutsuko Hatano ,  Ming-Hong Lee ,  Seung-Jae Moon

IPC分类号： H01L2362

CPC分类号： H01L21/02686 ,  H01L21/2026

摘要： A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center of the first laser beam spot. The first laser beam prolongs the molten Si phase and induces grain growth in a certain direction. The second laser beam triggers nucleation and controls grain location leading to subsequent lateral grain growth.

公开(公告)号：US5442195A

公开(公告)日：1995-08-15

申请号：US136984

申请日：1993-10-18

申请人： Kazuo Saitoh ,  Toshikazu Nishino ,  Mutsuko Hatano

发明人： Kazuo Saitoh ,  Toshikazu Nishino ,  Mutsuko Hatano

IPC分类号： H01L39/22 ,  H01L27/18 ,  H01L39/24 ,  B05D5/12 ,  G11C11/44 ,  H01B12/00

CPC分类号： H01L27/18 ,  Y10S505/832

摘要： A superconducting device may include a superconducting weak link equipped with plural superconducting devices that are used as input-output terminals formed on the same plane and at least one current source for applying current to at least one of these superconducting electrodes. A superconducting device suitable for high integration can be realized as it enables structuring of a superconducting weak link 1 equipped with plural superconducting electrodes 101, 102, 103 and 104 that can be used as input-output terminals and changing symmetry of superconducting electrode arrangement through the form of a normal conductor 201 which is forming a superconducting weak link. In addition, when this superconducting device is used as a quasi-particle injection type device, a superconducting device with plural superconducting electrodes that can be used for a gate electrode, drain electrode or control electrode can be realized. Further, a superconducting device equipped with new functions (e.g. motion as a neuron device) which are capable of high integration can be realized by utilizing these characteristics. Furthermore, being a proximity effect type, superconducting weak link has an advantage of realizing an ultra highspeed, low electricity consuming switching device.

摘要翻译： 超导装置可以包括配备有多个超导装置的超导弱连接器，所述多个超导装置用作形成在同一平面上的输入 - 输出端子和用于向这些超导电极中的至少一个施加电流的至少一个电流源。 可以实现适用于高集成度的超导装置，因为它能够构成配备有可用作输入 - 输出端子的多个超导电极101,102,103和104的超导弱连接件1，并且通过所述超导电极装置改变超导电极装置的对称性 形成超导弱连接的正常导体201的形式。 此外，当该超导装置用作准粒子注入型装置时，可以实现具有可用于栅电极，漏电极或控制电极的多个超导电极的超导装置。 此外，可以通过利用这些特性来实现配备有能够高集成度的新功能（例如作为神经元装置的运动）的超导装置。 此外，作为接近效应型，超导弱连接具有实现超高速，低耗电开关器件的优点。

公开(公告)号：US4866373A

公开(公告)日：1989-09-12

申请号：US291338

申请日：1988-12-28

申请人： Yutaka Harada ,  Eiichi Goto ,  Ushio Kawabe ,  Nobuo Miyamoto ,  Hideaki Nakane ,  Mutsuko Hatano

发明人： Yutaka Harada ,  Eiichi Goto ,  Ushio Kawabe ,  Nobuo Miyamoto ,  Hideaki Nakane ,  Mutsuko Hatano

IPC分类号： G01R17/06 ,  G01R19/00 ,  G01R19/15 ,  G01R19/257

CPC分类号： G01R19/257 ,  G01R17/06 ,  G01R19/0092 ,  G01R19/15 ,  Y10S505/827 ,  Y10S505/845

摘要： A superconducting current detecting circuit which comprises a reference current generation circuit for generating a reference current and a DC flux parametron circuit for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which agrees with the input current.

摘要翻译： 一种超导电流检测电路，包括用于产生参考电流的参考电流产生电路和用于将待检测的输入电流与参考电流进行比较的DC通量参数电路，从而产生与输入激励信号同步的脉冲， 所述脉冲根据所述输入电流和所述参考电流之间的差异而变化，所述脉冲具有取决于所述差的极性的正值或负值，所述参考电流产生电路具有用于将所述参考电流增加或减少量的装置 对应于响应于脉冲极性的脉冲数，使得参考电流产生电路产生与输入电流一致的参考电流。

公开(公告)号：US08242505B2

公开(公告)日：2012-08-14

申请号：US12003462

申请日：2007-12-26

申请人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Yoshiaki Toyota

发明人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Yoshiaki Toyota

IPC分类号： H01L29/04 ,  H01L31/036

CPC分类号： H01L27/127 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

摘要翻译： 提供了一种用于提高像素的开口率的显示装置。 在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极， 透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分 像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

公开(公告)号：US08199269B2

公开(公告)日：2012-06-12

申请号：US12216445

申请日：2008-07-03

申请人： Takashi Hattori ,  Mutsuko Hatano

发明人： Takashi Hattori ,  Mutsuko Hatano

IPC分类号： G02F1/136 ,  G02F1/1333 ,  H01L21/00 ,  H01L21/469

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： A method for manufacturing a thin film transistor including a step of forming a polymer film (a) to a layer above a support substrate, a step of forming a semiconductor element above the polymer film (a), and a step of separating the support substrate from the polymer film (a) formed with the semiconductor element in which the polymer film (a) has a thickness of 1 μm or more and 30 μm or less, a transmittance of 80% or higher to a visible light at a wavelength of 400 nm or more and 800 nm or less, a 3 wt % loss temperature of 300° C. or higher, and a melting point of 280° C. or higher.

摘要翻译： 一种制造薄膜晶体管的方法，包括在支撑基板上形成聚合物膜（a）的步骤，在聚合物膜（a）上方形成半导体元件的步骤，以及分离支撑基板 从聚合物膜（a）的厚度为1μm以上且30μm以下的半导体元件形成的聚合物膜（a）的透射率为波长400的可见光的80％以上 以上且800nm以下，3重量％的损失温度为300℃以上，熔点为280℃以上。