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103 条记录 (耗时 0.038 秒)

    APPARATUS AND METHOD FOR PRE AND POST TREATMENT OF ATOMIC LAYER DEPOSITION
    71.
    发明申请
    APPARATUS AND METHOD FOR PRE AND POST TREATMENT OF ATOMIC LAYER DEPOSITION 审中-公开
    用于预处理原子层沉积的装置和方法

    公开(公告)号：US20080260963A1

    公开(公告)日：2008-10-23

    申请号：US11736514

    申请日：2007-04-17

    申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

    发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

    IPC分类号： C23C14/02 ,  B05B15/00

    CPC分类号： C23C16/45551 ,  C23C16/45517 ,  C23C16/45536 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862

    摘要： The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In an exemplary embodiment, a proximity head for treating a substrate surface is provided. The proximity head is configured to dispense a treatment gas to treat an active process region of a substrate surface under the proximity head. The proximity head covers the action process region of the substrate surface and the proximity head includes at least one vacuum channel to pull excess treatment gas from a reaction volume between the proximity head and the substrate. The proximity head has an excitation chamber to excite the treatment gas before the treatment gas being dispensed on the active process region portion of the substrate surface.

    摘要翻译： 这些实施例填补了执行基板表面处理以提供均匀，清洁和有时被激活的表面的系统和工艺的需要，以便在层之间提供良好的粘附以改善金属迁移和空隙传播。 在示例性实施例中，提供了用于处理基板表面的邻近头。 邻近头部被配置成分配处理气体以处理邻近头部下方的基底表面的活性过程区域。 邻近头部覆盖衬底表面的动作过程区域，并且邻近头部包括至少一个真空通道，以从邻近头部和衬底之间的反应体积拉出过量的处理气体。 接近头具有激励室，以在将处理气体分配在衬底表面的有源工艺区域部分之前激发处理气体。

    APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT
    72.
    发明申请
    APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT 有权
    用于铜互连的集成表面处理和沉积的装置和方法

    公开(公告)号：US20080260940A1

    公开(公告)日：2008-10-23

    申请号：US11736522

    申请日：2007-04-17

    申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

    发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

    IPC分类号： B05D5/12 ,  C23C14/14

    CPC分类号： C23C16/54 ,  C23C16/45544 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873

    摘要： A method and system for depositing films on a substrate for copper interconnect in an integrated system is provided. The method includes moving the substrate into a processing chamber having a plurality of proximity heads. Selected ones of the proximity heads is configured to perform at least one of surface treatments and atomic layer depositions (ALDs). The processing chamber is part of the integrated system. Within the processing chamber, barrier layer deposition is performed over a surface of the substrate using one of the plurality of proximity heads functioning to perform barrier layer ALD. In addition, the method includes moving the substrate from the processing chamber, through a transfer module of the integrated system and into a processing module for performing copper seed layer deposition. The processing module for performing copper seed layer deposition is part of the integrated system. Within the processing module for performing copper seed layer deposition, copper seed layer deposition is performed over the surface of the substrate. The integrated system enables controlled-ambient transitions within the integrated system to limit exposure of the substrate to uncontrolled ambient conditions outside of the integrated system.

    摘要翻译： 提供了一种用于在集成系统中的用于铜互连的衬底上沉积膜的方法和系统。 该方法包括将衬底移动到具有多个接近头的处理室中。 所选择的接近头被配置为执行表面处理和原子层沉积（ALD）中的至少一个。 处理室是集成系统的一部分。 在处理室内，使用用于执行阻挡层ALD的多个邻近头之一，在衬底的表面上进行阻挡层沉积。 此外，该方法包括通过集成系统的转移模块将处理室的衬底移动到用于执行铜种子层沉积的处理模块中。 用于执行铜种子层沉积的处理模块是集成系统的一部分。 在用于进行铜种子层沉积的处理模块内，在衬底的表面上进行铜籽晶层沉积。 集成系统使集成系统内的受控环境转换能够将基板的曝光限制在集成系统外部的不受控制的环境条件下。

    Apparatus and method for atomic layer deposition
    76.
    发明授权
    Apparatus and method for atomic layer deposition 有权
    用于原子层沉积的装置和方法

    公开(公告)号：US09359673B2

    公开(公告)日：2016-06-07

    申请号：US13489235

    申请日：2012-06-05

    申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

    发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

    IPC分类号： C23C16/455 ,  C23C16/54 ,  H01L21/67 ,  H01L21/285 ,  H01L21/768

    CPC分类号： C23C16/45551 ,  C23C16/45517 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/76843

    摘要： A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.

    摘要翻译： 用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头包括多个侧面。 当衬底区域的一部分延伸并与衬底区域的部分间隔开时，邻近头部是可旋转的，以便将每个侧面放置在衬底区域的方向上，并且设置在耦合到 载体气体源，用于在操作期间维持邻近头部的压力。 邻近头部的每一侧包括气体导管，反应气体和净化气体依次分配通过该气体导管，以及在气体导管的每一侧上的至少两个独立的真空管道，以将过量的反应气体，净化气体或沉积副产物从 面对衬底的接近头的表面与衬底之间的反应体积。

    Method and apparatus for cleaning a substrate using non-newtonian fluids
    77.
    发明授权
    Method and apparatus for cleaning a substrate using non-newtonian fluids 有权
    使用非牛顿流体清洗基材的方法和设备

    公开(公告)号：US08671959B2

    公开(公告)日：2014-03-18

    申请号：US13252859

    申请日：2011-10-04

    申请人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fred C. Redeker

    发明人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fred C. Redeker

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67057 ,  B08B3/003 ,  B08B7/0014 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  Y10S134/902

    摘要： An apparatus for cleaning a substrate includes an application unit having a top inlet conduit and a bottom plate section. The top inlet conduit has an opening for receiving a non-Newtonian fluid and the bottom plate section has an opening through which the non-Newtonian fluid can flow. The bottom plate section is perpendicular to the top inlet conduit, and a surface of the bottom plate section is disposed above and parallel to a surface of a substrate so as to define a gap between the surface of the bottom plate section and the surface of the substrate. The defined gap has a height configured to create a flow of the non-Newtonian fluid in which a portion of the flow exhibits plug flow, and the plug flow moves over the surface of the substrate to remove particles from the surface of the substrate.

    摘要翻译： 用于清洁基板的装置包括具有顶部入口导管和底板部分的施加单元。 顶部入口导管具有用于接收非牛顿流体的开口，底板部分具有非牛顿流体可以流过的开口。 底板部分垂直于顶部入口导管，并且底板部分的表面设置在基板的表面上方并平行于基板的表面，以便限定底板部分的表面与底板部分的表面之间的间隙 基质。 限定的间隙具有构造成产生非牛顿流体的流动的高度，其中流体的一部分显示出塞子流动，并且塞子流动在衬底的表面上移动以从衬底的表面移除颗粒。

    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
    79.
    发明授权
    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids 失效
    使用压缩和/或加压泡沫，气泡和/或液体清洁半导体晶片的方法和设备

    公开(公告)号：US08535451B2

    公开(公告)日：2013-09-17

    申请号：US12240300

    申请日：2008-09-29

    申请人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

    发明人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

    IPC分类号： B08B1/04

    CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

    摘要： An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

    摘要翻译： 公开了一种装置和方法，其中具有含有污染物的表面的半导体衬底被清洁或以其它方式用泡沫进行化学处理。 半导体晶片被支撑在刚性支撑件（或泡沫层）上，并且在半导体晶片被支撑的同时在半导体晶片的相对表面上提供泡沫。 接触半导体晶片的泡沫使用形式加压以产生卡住的泡沫。 形式与半导体晶圆之间的相对移动。 例如平行于和/或垂直于半导体晶片的顶表面的振荡。 然后在卡住的泡沫与半导体晶片接触的同时引发，以除去不期望的污染物和/或以其它方式化学处理使用泡沫的半导体晶片的表面。